Chapter 3: Transistors

BJT and FET

Pham Duy Hung, PhD
Faculty of Electronics and Telecommunications,
VNU-University of Engineering and Technology
Email: [email protected]

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Outline
• Bipolar Junction Transistor (BJT)
 Simplified Structure and Modes of Operation
 I-V Characteristics
 Biasing of the BJT
 BJT Circuit at DC
 Small-Signal Operating Model
• Field Effect Transistor(FET)
 Introduction
 JFET and MOSFET
 Small-Signal Operating Model
Textbook: Adel. S. Sedra, Kenneth C. Smith. Microelectronic Circuits.
Oxford University Press. 2011 (Chapter 5 and 6).

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1. Bipolar Junction Transistor (BJT)
1.1 Simplified Structure and Modes of Operation
Npn transistor Pnp transistor

BJT Modes of Operation

Mode EBJ CBJ
Cutoff Reverse Reverse
Active Forward Reverse
Saturation Forward Forward

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1. Bipolar Junction Transistor (BJT)
1.1 Simplified Structure and Modes of Operation
• BJT is a Current-Controlled Current Source (CCCS) or a Voltage-Controlled
Current Source (VCCS).

• Three different transistor circuit configurations:

Common-Emitter (CE) Common-Base (CB) Common-Collector (CC) 4

 1. Bipolar Junction Transistor (BJT)
1.1 Simplified Structure and Modes of Operation
• Active mode (npn):
 EBJ: Forward; CBJ: Inverse
 𝑖 = 𝐼 𝑒 ⁄ , where 𝐼 is
Saturation current
 𝑖 = , 50 ≤ 𝛽 ≤ 200
𝛽 is called common-emitter current gain

𝑖 = 𝑖 + 𝑖 → 𝑖 = 𝑖
𝛼= < 1 is called common-base
current gain

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 Large signal equivalent circuit models for npn
transistor in active mode
VCCS CCCS

The diode 𝐷 has a Expressing the

scale current 𝐼 = current of the
and thus provides a controlled
current 𝑖 controlled source as α𝑖
by 𝑣

Diode 𝐷 Expressing
conducts the 𝑖 as 𝜷 𝑖
base current
𝐼 =

These models apply to any positive value of 𝑣 => Large signal models 6
 Example 6.1 (P359)
• npn transistor: 𝐼 = 10 A and 𝛽 = 100
• E is grounded, B is fed with constant-current source supplying a dc current of 10𝜇𝐴
• C is connected to a 5V dc supply via a resistance 𝑅 = 3𝑘Ω
• Assuming the transistor is in the active mode, find 𝑽𝑩𝑬 and 𝑽𝑪𝑬

 Solution: which model should we choose?

we know 𝐼 = 10𝜇𝐴 => choose CCCS (d)

• 𝑉 = 𝑉 ln = 𝑉 ln
∗
→ 𝑉 = 25 ln = 690 𝑚𝑉
• 𝑉 =𝑉 −𝑅 𝐼
𝐼 = 𝛽𝐼 = 1𝑚𝐴
→ 𝑉 = 2𝑉

𝑉 = 2𝑉; 𝑉 = 0.69𝑉 → CBJ is Reverse.

=> Transistor is indeed operating in the active mode
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 Example 6.1 (P359)
𝑹𝑩 =?

Replace the current source with a

resistance from the base to 5Vdc supply

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1. Bipolar Junction Transistor (BJT)
1.1 Simplified Structure and Modes of Operation
• Saturation mode (npn):
 EBJ: Forward; CBJ: Forward
𝑖 = 𝐼 𝑒 ⁄ − 𝐼 𝑒 ⁄
⇒ 𝑣 increases, causing 𝑖 to
decrease and reach 0.
 𝑖 = 𝐼 ⁄𝛽 𝑒 ⁄ + 𝐼 𝑒 ⁄

Why 𝑰𝑪 decreases in saturation?

Active mode Saturation mode

A transistor deep in saturation has 𝑉 =𝑉 −𝑉 ≈ 0.2𝑉.

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1. Bipolar Junction Transistor (BJT)
1.1 Simplified Structure and Modes of Operation
• PnP

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Example 6.2 (P368)
The transistor has 𝛽 = 100 and 𝑣 = 0.7𝑉 at 𝑖 = 1𝑚𝐴
Design the circuit so that a current of 2mA flows through C and a
voltage of +5V appears at C.
How to do?
 Determine the operation mode?
 Find 𝑅 , 𝑅
Solution
Since 𝑉 = +5𝑉 => CB reverse biased => BJT is in active
mode
15 − 5 10𝑉
𝑅 = = = 5𝑘𝛺
𝐼 2𝑚𝐴
Since 𝑣 = 0.7𝑉 at 𝑖 = 1𝑚𝐴, the value of 𝑣 at 𝑖 =
2𝑚𝐴 is 𝑉 = 0.7 + 𝑉 𝑙𝑛 = 0.717V
Since the base is at 0V, 𝑉 = −0.717𝑉
𝐼 𝐼
𝐼 = = = 2.02𝑚𝐴
∝ 𝛽
𝛽+1
𝑉 − (−15)
𝑅 = = 7.07𝑘𝛺
𝐼 13
1. Bipolar Junction Transistor (BJT)
1.2 BJT I – V Characteristics
• Voltage polarities and current flow in Active mode

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1. Bipolar Junction Transistor (BJT)
1.2 BJT I – V Characteristics
• BJT Input Characteristic (𝐼 − 𝑉 )
• BJT Transfer Characteristic (𝐼 − 𝑉 or 𝐼 − 𝐼 )
• BJT Output Characteristic (𝐼 − 𝑉 )

BJT Transfer Characteristic: 𝐼 = 𝑓(𝑉 )|

BJT Input Characteristic 𝑰𝑩 = 𝒇(𝑽𝑩𝑬 )|𝑽𝑪𝑬 𝒄𝒐𝒏𝒔𝒕 ? 15
1. Bipolar Junction Transistor (BJT)
1.2 BJT I – V Characteristics
• BJT Output Characteristic: 𝐼 = 𝑓 𝑉 | ,
 When 𝑣 < 0.3V, 𝑉 < −0.4V,
the CB junction becomes forward
biased => the transistor enters
the saturation region
 When extrapolated, the
characteristic lines meet at a
∆
point 𝑣 = −𝑉 , it is called the Slope=∆ =

Early Voltage, 𝑉 ~ 10,100 𝑉.

 Early Effect:

1 i VA
 C ro  Output resistance
ro vCE vBE const
IC
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1. Bipolar Junction Transistor (BJT)
1.2 BJT I – V Characteristics

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
• It is the process of applying external voltages to it. In order to
use the BJT for any application like amplification, the two
junctions CB and CE should be properly biased according to the
required application.

• Quiescent point (or the DC operating point) (Q-point):

(𝐼 , 𝑉 ), (𝐼 , 𝑉 ): no AC signal component is present at Q

• Since the current through transistor changes according to

temperature, Q is changed according to temperature, too. So
the requirement of the biasing for BJT is the temperature
stabilization for Q
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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
• Fixed biasing circuit
 Thenevin equivalent : 𝑉 = and 𝑅 = 𝑅 //𝑅

 KVL: 𝑉 =𝐼 𝑅 +𝑉 →𝐼 =

 KVL: 𝑉 =𝐼 𝑅 +𝑉 →𝐼 =
𝑉

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
• Biasing circuit using current feedback resistor
 Thenevin equivalent: 𝑉 = and 𝑅 = 𝑅 //𝑅

 KVL: 𝑉 = 𝐼 𝑅 + 𝑉 + 𝐼 𝑅
𝐼 =𝐼 +𝐼
→𝐼 = 1+𝛽 𝐼
𝐼 = 𝛽𝐼

𝑉 >𝑉 ≈ 0.2𝑉: Active mode

 KVL: 𝑉 =𝐼 𝑅 +𝑉 +𝐼 𝑅 𝑅 : current feedback resistor

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
• Biasing circuit using voltage feedback resistor
 KVL: 𝑉 = 𝐼 +𝐼 𝑅 +𝐼 𝑅 +𝑉

𝑅 is chosen for Q is in the active

region (𝑉 > 𝑉 ≅ 0.7𝑉)

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
• Biasing BJT to Obtain Linear Amplification

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.1
𝑉 ,𝑉 ,𝐼 ,𝐼 ,𝐼 ?

𝛽 = 100

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.2
𝑉 ,𝑉 ,𝐼 ,𝐼 ,𝐼 ?

𝛽 ≥ 50

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.3

𝑉 ,𝑉 ,𝑉 ,𝐼 ,𝐼 ,𝐼 ?

𝛽 = 100

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.4

𝛽 = 𝛽 = 100

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1. Bipolar Junction Transistor (BJT)
1.3 Biasing of the BJT
Exe 1.3.5

𝛽 = 100

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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Analog circuits often operate with signal levels
that are small compared to the bias currents and
voltages in the circuit. The small signal models
allow calculation of circuit gain and terminal
impedances easily.

• Consider the BJT operated in the active region

about Q-point (𝐼 , 𝑉 ) or (𝐼 , 𝑉 ).

• A small signal input voltage 𝑣 is applied in series

with 𝑉 and produces a small variation base
current 𝑖 and a small variation in collector
current 𝑖 . Total values of base and collector
currents are 𝑖 and 𝑖 , respectively, and thus
𝑖 =𝐼 +𝑖 and 𝑖 = 𝐼 + 𝑖
𝑣 =𝑉 +𝑣 𝑣 =𝑉 +𝑣

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 1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model

• The I-V characteristic curves of the device can be replaced by the tangent
(straight line) at Q-point and the relationship between currents and voltages
can be determined easily based on linear equations. 29
1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Collector Current and Transconductance

𝑖 =𝐼 +𝑖 𝑔 = is called transconductance

Transconductance:

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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Base Current and Input resistance at base

(Because 𝑔 = )

𝑟 = = = Input resistance

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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Emitter Current and Input resistance at Emitter

𝑟 = = = ≈ emitter resistance

• Relationship between 𝒓𝝅 and 𝒓𝒆 :

• Voltage gain:

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 1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• In the small signal mode, BJT can be considered as a linear two port
network containing two input (𝑣 , 𝑖 ) and two outputs (𝑣 , 𝑖 )

i b  y11vbe  y12vce
i c  y21vbe  y22vce

𝑟 Input resistance
iB ib 1
y11   
vBE Q
vbe vce  0
r
Reverse transconductance
i i
y12  B  b
vCE Q vce v 0
be

Transconductance
i i
y21  C  C  gm
vBE Q vbe v
ce  0

r0 is output resistance
iC iC 1
y22    33
vCE vce v r0
Q be  0
1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Hybrid-𝜋 Model

Voltage-Controlled Current Source (VCCS) Current-Controlled Current Source (CCCS)

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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model
• Hybrid-𝜋 Model with resistance 𝑟 (Accounting for Early Effect)

appears in parallel with 𝑅

Voltage-Controlled Current Source (VCCS) Current-Controlled Current Source (CCCS)

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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model

• T-Model

Voltage-Controlled Current Source (VCCS) Current-Controlled Current Source (CCCS)

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1. Bipolar Junction Transistor (BJT)
1.4 Small-Signal Operating Model

• T-Model with resistance 𝑟 (Accounting for Early Effect)

Voltage-Controlled Current Source (VCCS) Current-Controlled Current Source (CCCS)

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Exe 1.4.1
• Analyze the transistor amplifier shown in the below Figure to
determine its voltage gain . Assume 𝛽 = 100.

DC analysis
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Exe 6.14
• Analyze the transistor amplifier shown in the below Figure to
determine its voltage gain . Assume 𝛽 = 100.

AC analysis

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 2. Field-Effect Transistor (FET)
2.1 Introduction
• High input impedance (𝑀Ω).
• Temperature stable than BJT
• Smaller than BJT
• Less noise compare to BJT
𝐼 𝐼
Control current 𝑰𝑩 C Control voltage 𝑽𝑮𝑺 D
BJT FET
B G
E S
Three Terminals
Drain-D
Gate-G
Source-S
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2. Field-Effect Transistor
2.1 Introduction
(Junction Field-Effect Transistor)

: Insulated-gate FET
(Metal-Oxide Semiconductor FET)

Types of Field – Effect Transistors

41
2. Field-Effect Transistor
2.2 JFET: Structure and Operation
n-channel JFET p-channel JFET

𝑉
𝐼 =𝐼 (1 − )
𝑉 42
𝑉 = 0𝑉 and 𝑉 < 𝑉 <0 𝑉 ≤𝑉
2. Field-Effect Transistor
2.2 JFET: Structure and Operation
• Three different transistor circuit configurations:

Common Source (CS) Common Gate (CG) Common Drain (CD)

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2. Field-Effect Transistor
2.3 JFET: I-V Characteristics
• Transfer Characteristic: 𝐼 = 𝑓(𝑉 )|
• Output Characteristic: 𝐼 = 𝑓(𝑉 )|

𝑉 Saturation 𝐼
𝐼 =𝐼 (1 − )
𝑉

Cutoff voltage

Forward Transconductance
∆
𝑔 =
∆
𝑉 Transfer Characteristic
𝑔 =𝑔 1−
𝑉 ( )
2𝐼
𝑔 =
𝑉 ( ) 44
2. Field-Effect Transistor
2.3 JFET: I-V Characteristics
• Output Characteristic
 Linear/Ohmic/Triode Region
 Saturation Region
 Breakdown region

Linear region
(Ohmic)

Breakdown
Saturation region region

𝑽𝑷𝟎 (Pinch-off voltage)

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2. Field-Effect Transistor
2.3 JFET: I-V Characteristics
• Family of output Characteristics

 Saturation region
𝐾
𝑖 = (𝑉 − 𝑉 ) Cutoff voltage and Pinch-off Voltage?
2
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Example 1:
• For JFET with 𝑉 ( ) = −4𝑉 and 𝐼 = 12𝑚𝐴.
Determine the minimum value of 𝑉 required to
put the device in the constant-current area of
operation.

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Example 1
• 𝑉 ( ) = −4𝑉 → 𝑉 = 4𝑉
• Minimum value of 𝑉 for JFET to be in its saturation
region:
𝑉 = 𝑉 = 4𝑉
• In the constant-current area with 𝑉 = 0:
𝐼 =𝐼 = 12𝑚𝐴
• Drop voltage on the drain resistor:
𝑉 ∗ .
• KVL: 𝑉 =𝑉 +𝑉 = 4 + 6.72 = 10.7𝑉

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Example 2
• A particular p-channel JFET has 𝑉 =
4𝑉. What is 𝐼 when 𝑉 = 6𝑉?

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Example 2
• P-channel JFET required a positive gate-source voltage.
More positive voltage, less drain current.
• 𝑉 = 4𝑉, then 𝐼 = 0.
• => Further Increase 𝑉 (𝑉 = 6𝑉), keep JFET cutoff
(𝐼 = 0)

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N-channel JFET

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 Example 3
• N-channel JFET 2N5459
has 𝐼 = 9𝑚𝐴 and
𝑉 ( ) = −8𝑉
(Maximum). Detemine
the drain current for
𝑉 = 0𝑉; −1𝑉; −4𝑉.

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Example 3
• 𝑉 = 0𝑉, 𝐼 = 𝐼 = 9𝑚𝐴
• 𝐼 =𝐼 (1 − )
• 𝑉 = −1, 𝐼 = 6.89𝑚𝐴

• 𝑉 = −4, 𝐼 = 2.25𝑚𝐴

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2. Field-Effect Transistor
2.4 JFET: Biasing circuits
• Fixed Bias:
𝐼 =0→𝑉 =𝑉
 𝐼 = 𝐼 (1 − )
𝑉 =𝑉 −𝐼 𝑅

• Self-Bias:
 𝐼 𝑅 +𝑉 +𝐼 𝑅 =0
→ 𝑉 = −𝐼 𝑅
(Note: 𝐼 = 0 and 𝐼 = 𝐼 )

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Example 4:
• For n-channel JFET in Figure,
internal parameter values such
as 𝑔 , 𝑉 ( ) and 𝐼 are
such that a drain current (𝐼 ) of
approximately 5mA is produced.
Find 𝑉 and 𝑉 .

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Example 4
• 𝑉 = 𝐼 𝑅 = 5𝑚𝐴 ∗ 220𝑜ℎ𝑚 = 1.1𝑉
• 𝑉 = 𝑉 − 𝐼 𝑅 = 15 − 5𝑚𝐴 ∗ 1𝑘 = 10𝑉
• => 𝑉 = 𝑉 − 𝑉 = 10𝑉 − 1.1𝑉 = 8.9𝑉
• Since 𝑉 = 0𝑉 ⇒ 𝑉 = 𝑉 − 𝑉 = −1.1𝑉

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Example 5
• Determine 𝑅 required to
self-bias a n-channel JFET
that has transfer
characteristic curve as in
Figure at 𝑉 = −5𝑉

57
Example 5
• From Figure, 𝐼 = 6.25𝑚𝐴 at 𝑉 = −5𝑉.
𝑉 5𝑉
𝑅 = = = 800𝑜ℎ𝑚
𝐼 6.25𝑚𝐴

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2. Field-Effect Transistor
2.1 Introduction
(Junction Field-Effect Transistor)

: Insulated-gate FET
(Metal-Oxyt Semiconductor FET)

Types of Field – Effect Transistors

59
 2. Field-Effect Transistor
2.5 MOSFET: Structure and Operation
 MOSFET Parameters
 𝐶 : Oxide capacitance per unit gate area [F/𝑚 ]
 𝜇 : Mobility of electrons at surface of channel [𝑚 /V.s]
 𝑉 [0.3-1V]: threshold voltage of 𝑣 to form a
conducting channel. (sufficient number of mobile electrons
accumulate in the channel region)
 𝑣 = 𝑣 − 𝑉 : effective voltage or overdrive voltage,
is the quantity that determines the charge in the
channel.

DMOS (p-channel) EMOS (p-channel) 60

N-channel MOSFET or NMOS transistor `
(Depletion MOSFET) (Enhancement MOSFET)
2. Field-Effect Transistor
2.6 MOSFET: I-V Characteristics
• DMOS Transfer Characteristic 𝐼 =𝐼 (1 −
𝑉
)
𝑉 ( )

𝑉 𝑉

n channel p channel
61
Example 6:
• For a certain DMOS, 𝐼 = 10𝑚𝐴 and 𝑉 = −8𝑉
a) Is this an n-channel or p-channel?
b) Calculate 𝐼 at 𝑉 = −3𝑉
c) Calculate 𝐼 at 𝑉 = +3𝑉

62
Example 6
𝑉 ( ) < 0-> n-channel DMOS

𝑉
𝐼 =𝐼 (1 − )
𝑉 ( )
b) 𝐼 = 3.91𝑚𝐴
c) 𝐼 = 18.9𝑚𝐴

63
2. Field-Effect Transistor
2.6 MOSFET: I-V Characteristics
• EMOS Transfer Characteristic: 𝐼 = 𝐾(𝑉 −𝑉 )

n - channel p - channel

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 Example 7
• An EMOS 2N7008 gives
𝐼 ( ) = 500𝑚𝐴 at
𝑉 = 10𝑉 and
𝑉 ( ) = 1𝑉. Determine
the drain current for
𝑉 = 5𝑉

65
Example 7
( )
• 𝐾= = 6.17 𝑚𝐴/𝑉
( ( ))

• Using 𝐼 = 𝐾(𝑉 − 𝑉 ) , calculate 𝐼 for

𝑉 = 5𝑉 => 𝐼 = 98.7𝑚𝐴

66
2. Field-Effect Transistor
2.6 MOSFET: I-V Characteristics

67
2. Field-Effect Transistor
2.7 MOSFET: Biasing Circuits
• DMOS Bias
Example: 𝑅 = 620; 𝑅 = 10𝑀
𝑉 = −8𝑉 and 𝐼 = 12𝑚𝐴
𝑉 = 18𝑉. 𝑉 =?

Solution: 𝐼 = 𝐼 = 12𝑚𝐴
𝑉 = 𝑉 − 𝐼 𝑅 = 10.6𝑉

68
2. Field-Effect Transistor
2.7 MOSFET: Biasing Circuits
• EMOS Bias Example (a): 𝑅 = 200; 𝑅 = 100𝑘; 𝑅 = 15𝑘
𝐼 ( ) = 200𝑚𝐴 at 𝑉 = 4𝑉 and 𝑉 ( ) = 2𝑉
𝑉 = 24𝑉. 𝑉 =? 𝑉 =?

Solution (a): 𝑉 = 𝑉 = 3.13𝑉

( )
𝐼 ( )
𝐾= = 50𝑚𝐴/𝑉
(𝑉 − 𝑉 ( ) )
 𝐼 = 𝐾(𝑉 − 𝑉 ) =63.8mA
 𝑉 = 𝑉 − 𝐼 𝑅 = 11.2𝑉

Example (b): 𝑅 = 4.7𝑘; 𝑅 = 10𝑀; 𝑉 =

8.5𝑉 and 𝑉 ( ) = 3𝑉; 𝑉 = 15𝑉. 𝐼 =?
Solution (b):
𝐼 =0 𝑉 = 𝑉 = 8.5𝑉
→ 𝑉 =𝑉 => 𝐼 = =1.38mA
69