Analog Power AM4599C

N & P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY

VDS (V) rDS(on) (mΩ) ID(A)
35 @ VGS = 10V 7.7
60
Key Features: 50 @ VGS = 4.5V 6.5
• Low rDS(on) trench technology 57 @ VGS = -10V -5.0
-60
• Low thermal impedance 77 @ VGS = -4.5V -4.3
• Fast switching speed

Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

Parameter Symbol Nch Limit Pch Limit Units
Drain-Source Voltage VDS 60 -60
V
Gate-Source Voltage VGS ±20 ±20
TA=25°C 7.7 -4.3
Continuous Drain Current a ID
TA=70°C 6.5 -3.9 A
b
Pulsed Drain Current IDM 60 -60
a
Continuous Source Current (Diode Conduction) IS 3 -2.9 A
T A =25°C 2.1 2.1
Power Dissipation a PD W
TA=70°C 1.3 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Maximum Units
t <= 10 sec 62.5
Maximum Junction-to-Ambient a RθJA °C/W
Steady State 110

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature

© Preliminary 1 Publication Order Number:

DS_AM4599C_1A
Analog Power AM4599C

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Static
VDS = VGS, ID = 250 uA (N-ch) 1 V
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = -250 uA (P-ch) -1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA
VDS = 20 V, VGS = 0 V (N-ch) 1
Zero Gate Voltage Drain Current IDSS uA
VDS = -20 V, VGS = 0 V (P-ch) -1
VDS = 5 V, VGS = 10 V (N-ch) 10 A
On-State Drain Current a ID(on)
VDS = -5 V, VGS = -10 V (P-ch) -10 A
VGS = 10 V, ID = 5.4 A (N-ch) 33
mΩ
VGS = 4.5 V, ID = 4.4 A (N-ch) 50
Drain-Source On-Resistance a rDS(on)
VGS = -10 V, ID = -5.2 A (P-ch) 57
mΩ
VGS = -4.5 V, ID = -4.2 A (P-ch) 77
VDS = 15 V, ID = 5.4 A (N-ch) 22 S
Forward Transconductance a gfs
VDS = -15 V, ID = -5.2 A (P-ch) 25 S
IS = 1.5 A, VGS = 0 V (N-ch) 0.72 V
Diode Forward Voltage a VSD
IS = -1 A, VGS = 0 V (P-ch) -0.77 V
Dynamic b
Total Gate Charge Qg N - Channel 5
Gate-Source Charge Qgs VDS = 30 V, VGS = 4.5 V, 3.9 nC
Gate-Drain Charge Qgd ID = 5.4 A 8.2
Turn-On Delay Time td(on) 8
N - Channel
Rise Time tr 9
VDD = 30 V, RL = 5.6 Ω, ID = 5.4 A, ns
Turn-Off Delay Time td(off) 49
VGEN = 10 V, RGEN = 6 Ω
Fall Time tf 14
Input Capacitance Ciss 1465
N - Channel
Output Capacitance Coss 126 pF
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance Crss 114
Total Gate Charge Qg P - Channel 20
Gate-Source Charge Qgs VDS = -30 V, VGS = -4.5 V, 5.6 nC
Gate-Drain Charge Qgd ID = -5.2 A 7.9
Turn-On Delay Time td(on) P - Channel 6
Rise Time tr VDD = -30 V, RL = 5.8 Ω, 13
ns
Turn-Off Delay Time td(off) ID = -5.2 A, 71
Fall Time tf VGEN = -10 V, RGEN = 6 Ω 27
Input Capacitance Ciss 1817
P - Channel
Output Capacitance Coss 129 pF
VDS = -15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance Crss 111

Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.

© Preliminary 2 Publication Order Number:

DS_AM4599C_1A
Analog Power AM4599C

Typical Electrical Characteristics - N-channel

0.08 5
TJ = 25°C
RDS(on) - On-Resistance(Ω)

4
0.06

ID - Drain Current (A)

3V

3
0.04
3.5V
2

0.02
4V,4.5V,6V,8V,10V 1

0 0
0 2 4 6 0 1 2 3 4
ID-Drain Current (A) VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current 2. Transfer Characteristics

0.1 100
TJ = 25°C
TJ = 25°C
ID = 5.4A
RDS(on) - On-Resistance(Ω)

0.08
10
IS - Source Current (A)

0.06
1
0.04

0.1
0.02

0 0.01
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage

6 3000
10V,8V,6V,4.5V,4V F = 1MHz

2500
ID - Drain Current (A)

Capacitance (pf)

4 3.5V 2000
Ciss
1500
3V
2 1000

500
Coss
Crss
0 0
0 0.05 0.1 0.15 0.2 0.25 0.3 0 5 10 15 20
VDS - Drain-to-Source Voltage (V) VDS-Drain-to-Source Voltage (V)
5. Output Characteristics 6. Capacitance

© Preliminary 3 Publication Order Number:

DS_AM4599C_1A
Analog Power AM4599C

Typical Electrical Characteristics - N-channel

10 2.5
VDS = 30V
9
ID = 5.4A
VGS-Gate-to-Source Voltage (V)

RDS(on) - On-Resistance(Ω)
8 2
7

(Normalized)
6
1.5
5
4
3 1
2
1
0.5
0 -50 -25 0 25 50 75 100 125 150
0 10 20 30 40
Qg - Total Gate Charge (nC) TJ -JunctionTemperature(°C)
7. Gate Charge 8. Normalized On-Resistance Vs
Junction Temperature
1000 100

10 uS PEAK TRANSIENT POWER (W)

100 80
100 uS

1 mS
ID Current (A)

10 10 mS 60
100 mS

1 SEC
1 10 SEC 40
100 SEC

DC
0.1 1 Idm limit
20

Limited by
RDS
0.01 0
0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000

VDS Drain to Source Voltage (V) t1 TIME (SEC)

9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation

1
D = 0.5

0.2
RθJA(t) = r(t) + RθJA
0.1 0.1 RθJA = 110°C /W
0.05

0.02 P(pk)
0.01 Single Pulse t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000

t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient

© Preliminary 4 Publication Order Number:

DS_AM4599C_1A
Analog Power AM4599C

Typical Electrical Characteristics - P-channel

0.15 5
TJ = 25°C
RDS(on) - On-Resistance(Ω)

ID - Drain Current (A)

0.1
3V 3

3.5V
2
0.05

4V,4.5V,6V,8V,10V 1

0 0
0 2 4 6 0 1 2 3 4
ID-Drain Current (A) VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current 2. Transfer Characteristics

0.2 100
TJ = 25°C TJ = 25°C
0.18
ID = -5.2A
RDS(on) - On-Resistance(Ω)

0.16
10
IS - Source Current (A)

0.14
0.12
0.1 1
0.08
0.06
0.1
0.04
0.02
0 0.01
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V)

3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage

6 3000
F = 1MHz
10V,8V,6V,4.5V,4V
2500
ID - Drain Current (A)

3.5V Ciss
Capacitance (pf)

4 2000

3V
1500

2 1000

500
Coss

0 Crss
0
0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20

VDS - Drain-to-Source Voltage (V) VDS-Drain-to-Source Voltage (V)

5. Output Characteristics 6. Capacitance

© Preliminary 5 Publication Order Number:

DS_AM4599C_1A
Analog Power AM4599C

Typical Electrical Characteristics - P-channel

10 2.5
VDS = -30V
9
VGS-Gate-to-Source Voltage (V)

ID = -5.2A

RDS(on) - On-Resistance(Ω)
8
2
7

(Normalized)
6
5 1.5
4
3
1
2
1
0 0.5
0 10 20 30 40 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ -JunctionTemperature(°C)
7. Gate Charge 8. Normalized On-Resistance Vs
Junction Temperature
1000 120

10 uS PEAK TRANSIENT POWER (W) 100

100
100 uS

1 mS
80
ID Current (A)

10 10 mS

100 mS
60
1 SEC
1 10 SEC

100 SEC 40
DC
0.1 1 Idm limit 20
Limited by
RDS
0.01 0
0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000

VDS Drain to Source Voltage (V) t1 TIME (SEC)

9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation

1
D = 0.5

0.2
RθJA(t) = r(t) + RθJA
0.1 0.1 RθJA = 110°C /W
0.05

0.02 P(pk)
0.01 Single Pulse t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000

t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient

© Preliminary 6 Publication Order Number:

DS_AM4599C_1A
Analog Power AM4599C

Package Information

Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie
Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The
Plastic Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In
Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius
Of The Foot.

© Preliminary 7 Publication Order Number:

DS_AM4599C_1A