SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD998
DESCRIPTION
·With TO-3PML package
·Complement to type 2SB778
APPLICATIONS
·High power amplifier applications
·Recommended for 45~50W audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER CONDITIONS MAX UNIT
VCBO Collector-base voltage Open emitter 120 V
VCEO Collector-emitter voltage Open base 120 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 10 A
IB Base current 1.0 A
PC Collector dissipation TC=25 80 W
Tj Junction temperature 150
Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD998
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V
VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.5 V
ICBO Collector cut-off current VCB=120V; IE=0 10 µA
IEBO Emitter cut-off current VEB=5V; IC=0 10 µA
hFE DC current gain IC=1A ; VCE=5V 55 160
fT Transition frequency IC=1A ; VCE=5V 12 MHz
COB Collector output capacitance f=1MHz;VCB=10V 170 pF
hFE Classifications
R O
55-110 80-160
2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD998
PACKAGE OUTLINE
Fig.2 outline dimensions
3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD998
