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Cbse physics semiconductors handwritten notes
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SE [|= Conmuctogs
| After 1950 all vacuum bibes based eledrontc cteusfts were coploced Yay
|____} Bemiconduckor_bromsisters , tneyace called second _genexabnn ctceutts.
o | Bese Teor .
: a” oe
I A ==
SS eat
Metal ——
abo —s si Wes
* 1
| ~Tyees-. (Egzeneray gap]
eu Conductor ii miconduckor (EF. ily ne| here, Ni sini nete chame carrier. |
no of wtare
oct — poles
Evol yer Crdaouiies
a | Neh = Di
Z csior ts 00 of e/asle.S por uatk volume,
| ta an Subrinste Semfconchuckoe, the no-of conducting 7 fs: ngs=xio gy
a | God the otal curronk codnier, in a same Semiconduskor nf size 2
al = Loong | con Xone
a Ve bd x 1xpc > 1073
i total eurvent’ caer = Nein, = Mod x 107
us Volume
% us™
¥ # | Evbriosic: Somtconductor:
[3 j-——Blectrfcal conduckiifay ak coom_ temperature fs very tow
) ——} ——Eleuttol tonauiitly can he tnerenseel bey adding some
r Gonpucttves)
k 2 |“ Popirge:tn seme desirable fmpurthios {5 added to. fatriacte sent
{deltorake Wy, anan -tnis_prosess stalled closing. ancl the tovpurtty -& called os
dopant. - _
ee| provide extra e
+ \They one donar fmourfttes.
| Rapant : B, Ga, To
Ly Tetvotent tmpurfiies
provide extra +e hak
ne tn the doped sflton.
Apxigecio
al 2 n2 =nexny
| eee
C2an'F = ng 2 wxio**
ux oF= ny, ayfcio™™
we fnI P.N-Swoeion
Reverse") Bind
<—t, =e
+t-ve terminal of ite battens
tonneded to the s-tegian and
lve lectufnal conneued to P-vegion
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fn the end region inuords a |
nD
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| -ve. potential wll attack holes oun {Afrection of amuent. direction
) Eth ied
Lr
Ca
Lok me Paregon will push the |
| yele and. then combine ok tre
+ Garrent wf notflow( Teo}
| Peregin te gp to battery. the
J current wil flow. —__
|
UY) Avalandne Sreaedoven: —__
# lightly doped ___
* Widtn large. ———
- * Covalent bond torenks
| Tne free dentron moves to tne Naside_undec tne influence of Gemrier —___
| Glearic Held, tak Leads to Avalonche texpakdown,
| Zener Brendan. Ee
¥ hignly doped
= 6mal_ width
% Covalent bond breaks
bel when reverse bias valinge Increased. -the electric fiebl across clepletion +
Yogon also. fevcentes (c+ 64) Ata parker value large noo} eledroar
and holes oe produced This fs called zener breakdown.
@: |The diodeused tn. cfeusft_ax_chown fa tre figure ina _a constant —-___
+| volbage deop of Sv ak all currents ancl _amaximum power rating,
Pe100mW..Whak Should be the value of resistor connected wttin tre th
Series with the dfode fer dotafaing maxi eum ude Cent.
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| sow ——Hare Wave Reeneige:—
7
a phe e-fooword bas
poet *— Reverse biar
fs
B (teed yaxisFanee); tlle fees ——
1 | Rattive cde = o be -
iv naNerse p Dy
bias bias \
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s
2 Universel gate: -
A +] ano to Ano Gate A |c=aal ©
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a At p= ein
7 A-R=BA
(2)| associative oe
A+ +0) = (OrB) +
Di shy bubioe»
Alert AB Ee
{Ta the Given figure, Re Sy inna
iu Find the Logit _gake and ueile ft eolen_explession.
=|S54)_Oukpuk wee form,
——__}|___Date: 21> 04-24
——i}-©__i>_tlored —>_@ubb glow
Y.®_is dered —> owlh glow
eee eee ale gen
7 ay, a x
—\ =F mcaly 4 <<
oP
Nis Nya Vp tanstant «
—*|The_unreguiated BC yollage \ connetke d_ tothe 2ener_dindelarough.a___
——*} Series vesistanva_RS (Rs)_suth trak the zener diode is_reverse_bhased.___
| Tf the Sopuk voltage Socreases current tncougn_Rs_and zener diese —_
| abso tnccearer witfnouk chemging tae zener valkage,
= ence_sener diode aus_aso_vallag: equickor.
Ligue Eetiering Diepe
2? | Prjanction (highly doped) under focnael bfos_asnte..spontoneous_hadiak‘on
FLED i, formar bias— > € move from NteP 8
=? holes move. from Pte NL
7 >| ene Sundfon they will get veromicined.
21 On _resombinatfon, energy ts released fn the Sorin of | photons of energy
——}.eqals bo tne band _gap-
| ——*Ttoperates_undec_reverss fas.
fs used bo_sense_anch measure Sacidenk (gab_—s
— + | when Vg of onargyu £2 9 falh
vag veg sine to
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|__'3(3) On rearhtag, clestrans to_N-side and hol eo
| nestle perames negative and Posie becomes Ps
ves
\2=1 (500)
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ated Pas
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- Vase @rrience volHOge -
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