PAPER NAME: Introduction to Electronics Devices and Circuits

PAPER CODE: ECE1001

GROUP – A

MCQ (Choose the Correct Alternative)

Module 1
(i) An electron in the conduction band
(a) is bound to its parent atom .
(b) has no charge.
(c) is located near the top of the crystal
(d) has a higher energy than an electron in the valence band

(ii) For insulator, the forbidden gap is of the order of

(a) 5-6 eV
(b) 1 eV
(c) 0.1 eV
(d) zero
(iii) The conductivity of semiconductors depends on
(a) number of current carriers present per unit volume.
(b) the mobility of the current carriers.
(c) both (a) and (b).
(d) none of the above
(iv) Current flow in a semiconductor depends on the phenomenon of
(a) drift
(b) diffusion
(c) recombination
(d) all the above
(v) In breakdown region the Zener diode behaves like
(a) a constant voltage source
(b) a constant current source
(c) a source of resistance
(d) None of the above
(vi) Reverse saturation current in a p-n junction diode
(a) Does not depend on temperature
(b) becomes double with every 10° C temperature enhancement
(c) increases with temperature
(d) decreases with temperature
(vii) Efficiency of a full wave rectifier circuit is
(a) 81.2%
(b) 40.6%
(c) 65.7%
(d) 72%
(viii) Avalanche breakdown is primarily dependent on the phenomenon of
(a) collision
(b) doping
(c) recombination
(d) ionization

Module 2
(i) In a BJT with β = 100, α equals
(a) 99
(b) 0.99
(c) 1.0
(d) 1.01
(ii) When the base width of a BJT becomes zero, the transistor is said to be in
(a) Punch through
(b) Cut off
 (c) Saturation
(d) Breakdown
(iii) The Q-point in a voltage amplifier is selected in the middle of the active region because
(a) It gives better stability
(b) The circuit needs a small dc voltage
(c) The biasing circuit then needs less number of resistors
(d) It gives distortion less output.
(iv) In a Common Base BJT, for a fixed emitter base junction forward bias, increase in reverse bias
across the collector base junction,
(a) Increases emitter current
(b) Decreases emitter current
(c) Keeps emitter current constant
(d) Makes emitter current zero.
(v) A transistor having a high input impedance, and a low output impedance is operating in
(a) CB mode
(b) CE mode
(c) CC mode
(d) All mode
(vi) When both junctions are reverse biased, a transistor operates in
(a) active
(b) Saturation
(c) Cut-off mode
(d) None of the above
(vii) A BJT is a
(a) Voltage controlled device
(b) Current controlled device
(c) Voltage controlled device
(d) None
(viii) In an n-p-n transistor, the majority carriers in the base are
(a) Holes
(b) Electrons
(c) Both
(d) None

Module 3
(i) A FET is a
(a) current driven device
(b) voltage driven device
(c) both current and voltage control device
(d) none of the above
(ii) The noise level in FET is
(a) more than in BJT
(b) less than in BJT
(c) same as in BJT
(d) infinity
(iii) The polarity of voltage that is not applied to the gate terminal of p-channel JFET is
(a) negative
(b) positive
(c) zero
(d) none of the above
(iv) MOSFET uses the electric field of
(a) gate capacitance to control the channel current
(b) barrier potential of p-n junction to control the channel current
(c) both A and B
(d) none of these

(v) The value of drain current when Vgs=pinch off voltage is

(a) 1mA
(b) 0
 (c) 2mA
(d) 0.5A
(vi) For an n-channel FET, the direction of drain current flow is
(a) Gate to source
(b) Source to drain
(c) drain to source
(d) Drain to Gate
(vii) Comparing the size of BJT and FET, choose the correct statement
(a) Both have same size
(b) FET is larger than the BJT
(c) BJT is larger than the FET
(d) Depends on same application
(viii) The drain current in JFET is due to
(a)flow of Minority carriers
(b) flow of Majority carriers
(c) flow of both minority and majority carriers
(d) none of the above

Module 4
(i) The input impedance of ideal OP-AMP is
(a) infinity
(b) zero
(c) one
(d) none of the above
(ii) An inverting OP-AMP with feedback resistance, Rf and an input resistance,R1 connected to the
inverting terminal has a gain
(a) 1+ Rf/R1
(b) -(1+Rf/R1)
(c) Rf/R1
(d) -Rf/R1
(iii) What should be the gain of an ideal OP-AMP?
(a) Zero
(b) Unity
(c) Infinity
(d) Unpredictable
(iv) A summing amplifier can have
(a) only one input
(b) only two inputs
(c) any number of inputs
(d) none of these
(v) For an ideal OP-AMP which of the following statement is correct?
(a)Zero input impedance and infinite bandwidth
(b)Infinite input impedance and infinite bandwidth
(c) Zero input impedance and zero bandwidth
(d) Zero input impedance and zero bandwidth
(vi) If a capacitor is placed in the feedback path of an OP-AMP circuit, then the circuit can act as
(a) integrator
(b) multiplier
(c) subtractor
(d) divider
(vii) The negative feedback in an amplifier leads to which of the following?
(a) Increase in current gain
(b) Increase in voltage gain
(c) Decrease in voltage gain
(d) Decrease in bandwidth
 (viii) What would be the value of feedback voltage in a negative feedback amplifier with A=100; β =0.03
and input signal voltage = 40mv?
(a) 0.03V
(b) 0.06V
(c) 0.09V
(d) 0.12V

FILL IN THE GAPS

1. The semiconductors containing donor type impurities are referred to as __________.
2. Mobility of the charge carrier is given by ___________________.
3.. The full form of PIV is______________________.
4. The ripple factor value for a full-wave rectifier is_____.
5. The ideal value of stability factor of a biasing circuit is _________.
6. If both junction of transistor operated in reversed biased then transistor operated in____________________.
7. If ɑ=0.95 then the value of β of the transistor is ___________________________.
8. The most heavily doped region of a bipolar transistor is ___________________________.
9. The Shockley equation is for JFET__________________.
10. FET is characterised by _________ gain.
11. The depletion voltage of p-channel depletion type MOSFET is of _______ sign.
12.The full form of MOSFET is ___________________________.
13.A non-inverting OP-AMP with feedback resistance, Rf and an input resistance, R1 connected to the
inverting terminal has a gain ____________________________
14.Negative feedback in a circuit _________________________ the gain of the circuit.
15.In an OP-AMP, the input impedance is______________.
16.In an OP-AMP, the output impedance is______________.

GROUP – B

2. (a) Explain the difference between metal, insulator and semiconductor with proper band diagram.

(b) Find the conductivity and resistivity of an intrinsic semiconductor at a temperature of 3000K. It
is given that ni = 2.5 x 1013/cm3, µn = 3800 cm2/(V.s.), µp = 1800 cm2/(V.s.), q=1.6x10-19 C.

(c) State mass action law.

3. (a) Compare Fermi energy level at 0K and Fermi energy level for a finite nonzero temperature.

(b) “Holes are minority carriers in an n-type semiconductor”- Justify the statement with the help of
mass action law.
(c) Explain at a high temperature extrinsic semiconductor behaves like an intrinsic semiconductor.

4. (a) Compare the drift hole-current density and diffusion hole- current density.

(b) Draw and explain the energy band diagram of n type extrinsic semiconductor.

(c) Solve the concentration of holes in Si crystals having donor concentration of 1.4 X 1024/m3 when
the intrinsic carrier concentration is 1.4 X 1018/m3. Find the ratio of electron to hole
concentration.
5. (a) Compare avalanche and Zener breakdown.

(b) Justify that ‘a p-n junction diode is a nonlinear unilateral element’.

(c) Calculate the rise in temperature if the reverse saturation current in a p-n junction diode
increases by a factor 50.

6. (a) “Reverse saturation current in a p-n junction diode is a temperature dependent function”- is it
true? Justify your answer.

(b) Define barrier field and how does it appear across a p-n junction?

(c) The reverse saturation current at 300K of a p-n junction Ge diode is 5 µA. Find the voltage to be
applied across the junction to obtain a forward current of 50 µA.

7. (a) Evaluate the ripple factor and efficiency of a half- wave rectifier circuit.

(b) Draw and explain the operation of a full-wave rectifier circuit with proper circuit diagram and
waveforms.

8. (a) Evaluate the ripple factor and efficiency of a full-wave rectifier circuit.

(b) Draw and explain the operation of a half-wave rectifier circuit with proper circuit diagram and
waveforms.

9. (a) Explain current voltage characteristic of a p-n junction diode with a proper diagram.

(b) Explain with a circuit diagram the use of a Zener diode as a reference diode.

(c) Find the bias for which the reverse current in a silicon p-n junction diode is half its saturation
value at room temperature.

GROUP – C

10. (a) Explain Thermal Runaway?

(b) Draw and explain the output characteristics for common base configuration of an n-p-n
transistor.

(c) Derive the relationship between α and β for a BJT.

11. (a) Explain base width modulation and its effects.

(b) A n-p-n BJT having α = 0.98 and reverse saturation current ICO = 50 μA is operating the CB mode.
If the base current is 5 μA, calculate the emitter current and collector current.

(c) Define stability factor? Explain its significance.

12. (a) Explain the input and output characteristics of n-p-n BJT in CE mode.

(b) A transistor having α = 0.975 and a reverse saturation current ICO=10μA is operated in CE
configuration. Evaluate β for this configuration? If the base current is 250 μA, evaluate the emitter
current and the collector current.

13. (a) Explain the operation and current flow of n-p-n transistor with schematic diagram.

(b) If a transistor has its collector-base junction forward biased and other junction reversed biased
will it work? Explain.

(c) For a transistor if I E  1mA and   0.98 , determine the value of I B .

14. (a) Differentiate between biasing of a transistor when it works in active, saturation and cut-off
region.

(b) Draw the energy band diagram of a p-n-p transistor without biasing.

(c) Assuming β =100, VBE=0.7V, RB= 500KΩ, Calculate IC, IB, VCE for the following amplifier circuit.

15. (a) Draw a circuit diagram of a p-n-p BJT in CE mode for the study of output characteristics and sketch
the characteristics indicating saturation, active and cut off regions.
 (b) Two diode connected back to back does not form a transistor.’ Explain.

(c) Derive the relation between α and β. A n-p-n BJT has α = 0.99 and reverse saturation current ICEO=
100 µA. If the base current is 10 µA, calculate the emitter current and collector current.

16. (a) Mention the factors responsible for the stability of Q-point. Why BJT is called bipolar device?

(b) Sketch the output characteristic of a p-n-p transistor operating in a common-base mode. Explain
The nature of curves qualitatively

(c) A silicon n-p-n transistor has α = 0.995 and reverse saturation current ICO=15µA, operates in the
CE configuration. What is the collector current for a base current of 20 µA?

17. (a) Comparatively analyze the three BJT configurations (CE, CB, CC) for different parameters
indicating the practical uses of each case.

(b) Draw the energy band diagram of a p-n-p transistor with proper biasing.

(c) Calculate VCE and Ic for the following circuit. Assume VBE=0.7V

GROUP – D

18. (a) Define pinch-off voltage for JFET.

(b) Describe the working principle of n-channel JFET along with relevant circuit diagram.

(c) State and mention the parameters in Shockley Equation for JFET.
19. (a) Compare between BJT and FET.

(b) Sketch the transfer characteristics for an n-channel JFET with Saturation Drain-to-Source Current
IDSS = 16 mA and Pinch-Off Voltage, VP = -4 V.

(c) State and explain the parameters of FET.

20. (a) Describe the working principle of p-channel JFET along with relevant diagram.

(b) The drain current of a JFET is about 5mA. When IDSS is equal to 10 mA and Vp=-5V. Determine the
value of VGS.

(c) Define transconductance for a JFET.

21. (a) Mention the differences between BJT and FET.

(b) Draw and explain the output drain characteristic of an Enhancement type MOSFET.

(c) Find the transconductance by assuming the reverse gate voltage of a JFET changes from 5.0V to
4.9V and the drain current changes from 1.2mA to 1.5 mA.

22. (a) Describe the working principle of p-channel enhancement type MOSFET along with relevant
diagram.

(b) Explain what happened if the gate to source voltage is same as pinch of voltage inside a n-
channel JFET.

(c) Mention the relation between drain current, gate to source voltage and pinch off voltage in case
of n-channel JFET..

23. (a) Describe the working principle with a schematic diagram of a p-channel depletion type
MOSFET.

(b) Draw and explain the transfer characteristics of n-channel JFET.

24. (a) Define transconductance, amplification factor and drain resistance of a JFET.

𝑉𝐺𝑆
(b) Prove that 𝑔𝑚 = 𝑔𝑚0 (1 − 𝑉𝑃
) , where symbols have their usual meanings.

(c) An n-channel JFET has IDSS =10mA and Vp=-4V . Determine the minimum value of VDS for pinch off
region and drain current ID for VGS=-2V in pinch off region.
25. (a) Draw and explain drain and transfer characteristics of a p- channel JFET.

(b) In a n-channel FET the following parameters, IDSS=12Ma, Vp=-8V, and gmo=4000µs.
Determine the drain current and transconductance at VGS=-5V.

(c) Mention differences between depletion type and enhancement type of MOSFET.

GROUP – E

26. (a) Explain the effects of negative feedback in a system.

(b) Derive the expression for voltage gain for the circuit given below (assuming ideal OP-AMP
conditions)

(c) Explain Barkhausen criteria.

27. (a) Explain the operation of an OP-AMP as an integrator with proper circuit diagram.

(b) An inverting OP-AMP circuit has an input resistance of 10Ω and a feedback resistance of 50Ω.
Draw the circuit and calculate the gain of OP-AMP.

(c) Given a summing amplifier designed using inverting OP-AMP with feedback resistance, Rf=12 kΩ.
The output voltage obtained from the summing amplifier is given as, Vout=-(2V1+3V2+4V3),
where V1, V2, V3 are the input voltages as indicated in figure below. Evaluate R1, R2, R3.
28. (a) Explain virtual ground in OP-AMP.

(b) Explain the operation of an OP-AMP differentiator with proper circuit diagrams.

(c) A non-inverting OP-AMP circuit has an input resistance of 10Ω and a feedback resistance of 50Ω.
Draw the circuit and calculate the gain of OP-AMP.

29. (a) Design an inverting OP-AMP with gain of -6. (Take minimum value of resistance=10 Ω)

(b) Explain the characteristics of an ideal OP-AMP.

(c) Design a system with unity gain using OP-AMP.

30. (a) An non-inverting OP-AMP circuit has an input resistance of 20Ω and a feedback resistance of
120Ω. Draw the circuit and calculate the gain of OP-AMP.

(b) Sketch the output waveform of an OP-AMP integrator with a square waveform as input. Justify
your answer.

(c) An amplifier has the voltage gain of – 500. This gain is reduced to –100 when negative feedback
is applied. Evaluate i) the feedback factor β ii) the amount of feedback in dB iii) the output voltage
of the feedback amplifier for an input voltage of 40 mV.

31. (a) Design a circuit to obtain Vout=-2V1+3V2+4V3, using an OP-AMP, where V1, V2,V3 are the input
voltages taking minimum value of resistance as 10kΩ.

(b) Derive the expression of gain in positive-feedback amplifier.

(c) Explain the significance of negative feedback on high-gain amplifiers.

32. (a) Determine the expression of output voltage, V0 for the circuit given below
 (b) The voltage gain of an amplifier without feedback is 1000. Calculate the voltage gain of the
amplifier if negative feedback is introduced in the circuit. Given the feedback fraction is 0.02.

(c) Sketch the output waveform of an OP-AMP differentiator with a triangular input. Justify your
answer.

33. (a) Determine the expression of output voltage, V0 for the circuit given below.

(b) Derive the expression for voltage gain for the circuit given below (assuming ideal OP-AMP
conditions)

(c) If the gain of an amplifier is 90dB without feedback and 60dB with feedback, find the feedback
factor of the amplifier.