Chapter #3: Diodes
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
Introduction
IN THIS CHAPTER WE WILL LEARN
the characteristics of the ideal diode and how to analyze and
design circuits containing multiple ideal diodes together with
resistors and dc sources to realize useful and interesting
nonlinear function
the details of the i-v characteristic of the junction diode (which
was derived in Chapter 1) and how to use it to analyze diode
circuits operating in the various bias regions: forward, reverse,
and breakdown
a simple but effective model of the diode i-v characteristic in
the forward direction: the constant-voltage-drop model
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
Introduction
a powerful technique for the application and modeling of the
diode (and in later chapters, transistors): dc-biasing the diode and
modeling its operation for small signals around the dc-operating
point by means of the small-signal model
the use of a string of forward-biased diodes and of diodes
operating in the breakdown region (zener diodes), to provide
constant dc voltages (voltage regulators)
application of the diode in the design of rectifier circuits, which
convert ac voltages to dc as needed for powering electronic
equipment
a number of other practical and important applications
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.1.1. Current-Voltage
Characteristic of the
Ideal Diode
ideal diode – most
fundament nonlinear
circuit element
two terminal device
circuit symbol shown
to right
operates in two modes
on and off Figure 3.1: Diode characteristics
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.1.1. Current-Voltage
Characteristic
cathode – negative terminal, from which current
flows
anode – positive terminal of diode, into which
current flows
voltage-current (VI) behavior is:
piecewise linear for rated values
nonlinear beyond this range
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
4.1.1: Current-Voltage
Characteristic of the Ideal
Diode mode #2: reverse mode #1:
bias = open ckt. forward bias =
short ckt
ideal diode: is most fundament
device symbol
nonlinear circuit element
with
twotwo nodes
terminal device with circuit
symbol to right
operates in two modes forward
and reverse bias
figure 4.1.
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.1.1. Current-
Voltage
Characteristic
External circuit should be
designed to limit…
current flow across
conducting diode
voltage across blocking
diode
Figure 3.2: The two modes of
Examples are shown to operation of ideal diodes and the
right… use of an external circuit to limit
(a) the forward current and
Oxford University Publishing (b) the reverse voltage.
Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.1.2: A Simple
Application – The
Rectifier
One fundamental
application of this
piecewise linear behavior
is the rectifier.
Q: What is a rectifier?
A: Circuit which
converts AC waves in Figure 3.3(a): Rectifier Circuit
to DC…ideally with no
loss.
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.1.2: A Simple
Application – The
Rectifier
This circuit is composed
of diode and series
resistor.
Q: How does this circuit
operate?
A: The diode blocks
reverse current flow, Figure 3.3(a): Rectifier Circuit
preventing negative
voltage across R.
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.1.3. Another
Application,
Diode Logic Gates
Q: How may diodes be
used to create logic gates?
A: Examples of AND /
OR gates are shown
right.
Refer to next slide.
Figure 3.5: Diode logic gates: (a)
OR gate; (b) AND gate (in a
positive-logic system).
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
OR GATE AND GATE
IF vA = 5V THEN diodeA will IF vA = 0V THEN diodeA will
conduct AND vY = vA = 5V conduct AND vY = vA = 0V
IF all diodes block
THEN vY = 5V +
5V
-
+
5V
-
IF any diode conducts
THEN
Microelectronic vOxford
Circuits Y 5V
by =
Adel
University Publishing
S. Sedra and Kenneth C. Smith (0195323033)
3.2. Terminal discontinuity caused by
Characteristics differences in scale
of Junction Diodes
Most common
implementation of a
diode utilizes pn junction.
I-V curve consists of three
characteristic regions
forward bias: v > 0
reverse bias: v < 0
breakdown: v << 0
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.2.1. The
Forward-Bias Region
IS constant for diode at given
temperature (aka. saturation current)
The forward-bias (Eq3.1) i IS (ev / VT 1)
(eq4.1)
region of operation is VT thermal voltage
k Boltzmann's constant (8.62E -5 eV/K)
entered when v > 0. q magnitude of electron charge (1.6E -19 C)
I-V relationship is kT
(Eq3.2) VT
(eq4.2) 25.8mV
closely approximated q at room
by equations to right. temperature
IS constant for diode at given
temperature (aka. saturation current)
(3.3) is a simplification (Eq3.3) i IS ev / VT
(eq4.3)
suitable for large v Oxford University Publishing
Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.2.1. The
Forward-Bias
Region
Equation (3.3) may be
IS constant for diode at given
reversed to yield (3.4). temperature (aka. saturation current)
This relationship i
applies over as many (eq 4.4) v VT ln
(Eq3.4)
as seven decades of IS
current.
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.2.1. The step #1: consider two cases (#1 and #2)
Forward-Bias I1 IS eV1 / VT and I2 IS eV2 / VT
Region step #2: divide I2 by I1
I2 IS eV2 / VT
Q: What is the relative V1 / VT
I1 IS e
effect of current flow (i) step #3: combine two exponentials
on forward biasing
I2
voltage (v)? e(V2 V1 ) / VT
I1
A: Very small.
step #4: invert this expression
10x change in i, effects
60mV change in v. V2 V1 VT ln I2 / I1
step #5: convert to log base 10
V2 V1 2.3VT log I2 / I1
Oxford University Publishing 60 mV 2.3VT log10 / 1
Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.2.1: The
Forward-Bias
Region
cut-in voltage – is voltage,
below which, minimal
current flows
approximately 0.5V
fully conducting region –
is region in which Rdiode is
approximately equal 0
between 0.6 and 0.8V
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
fully conducting region
3.2.2. The Reverse-
Bias Region
this expression
applies for
negative voltages
The reverse-bias region of v / VT
operation is entered i IS e
when v < 0. action: invert exponential
I-V relationship, for 1
negative voltages with i I S v / V
e T
|v| > VT (25mV), is closely
0 for larger
approximated by voltage
magnitudes
equations to right.
i IS
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.2.2. The Reverse-
Bias Region
A “real” diode exhibits reverse-bias current,
although small, much larger than IS .
10-9 vs. 10-14Amps
A large part of this reverse current is attributed
to leakage effects.
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
3.2.3. The
Breakdown Region
The breakdown region
of operation is
entered when v < VZK.
Zener-Knee Voltage
(VZK)
This is normally non-
destructive.
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
breakdown region
i IS (ev / VT 1)
i IS i IS i IS e v / VT
V = 10VT
V = -VZK
V = -VT
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
