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Semiconductor Devices: (EEC-740) M.Tech. Degree Examination VLSI Design I Semester

The document outlines the exam structure for the M.Tech. Degree Examination in VLSI Design, specifically for the Semiconductor Devices course. It includes five modules, each with specific questions related to semiconductor properties, p-n junctions, transistor behavior, MOSFET characteristics, and JFET operation. Students are instructed to answer one question from each module, with a total of 60 marks available.

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Chetan Cherry
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8 views2 pages

Semiconductor Devices: (EEC-740) M.Tech. Degree Examination VLSI Design I Semester

The document outlines the exam structure for the M.Tech. Degree Examination in VLSI Design, specifically for the Semiconductor Devices course. It includes five modules, each with specific questions related to semiconductor properties, p-n junctions, transistor behavior, MOSFET characteristics, and JFET operation. Students are instructed to answer one question from each module, with a total of 60 marks available.

Uploaded by

Chetan Cherry
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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[Nov-17]

[EEC-740]
M.Tech. Degree Examination
VLSI Design
I SEMESTER
SEMICONDUCTOR DEVICES
(For the admitted batches 2015-16)
Time: 3 Hours Max.Marks: 60
-------------------------------------------------------------------------------------------
Instructions: Each Module carries 12 marks.
Answer all modules choosing one question from each module
All parts of the module must be answered in one place only.
Figures in the right hand margin indicate marks allotted.
------------------------------------------------------------------------------------------
MODULE -I
1. a) Differentiate semiconductors, conductors and insulators on
the basis of band gap 4
b) Explain what is the importance of valence shell and valence
electrons? 4
c) Explain what is the forbidden energy gap? How does it occur?
Explain what is its magnitude for Ge and Si? 4
OR
2. a) What is intrinsic semiconductor? Explain the formation of a
hole in the covalent bond structure of a Ge crystal 8
b) Explain about the High field transport in semiconductors 4
MODULE -II
3. a) Find the built-in potential for a p-n Si junction at room
temperature if the bulk resistivity of Si is 1Ω cm. Electron
mobility in Si at RT is 1400 cm2 V−1 s−1; μn/μp = 3.1;
ni = 1.05 × 1010 cm−3 6
b) At room temperature under the forward bias of 0.15 V the
current through a p-n junction is 1.66 mA. What will be the
current through the junction under reverse bias? 6
OR
4. a) Write a short note on diode current equation 4
b) Explain details about the switching characteristics on
PN diode with neat Sketch 8
MODULE-III
5. a) The transistor has IE= 10 mA and α = 0.98. Find the value
of base and collector currents 4
b) If a transistor has a α of 0.97 find the value of β. If β=200, find
the value of α 4
c) Explain high frequency behavior of BJT 4
OR
6. Draw the circuit diagram of a NPN transistor CE configuration
and the input and output characteristics. Also define its operating
regions 12
MODULE -IV
7. a) Explain the important issues in real MOSFETs 6
b) Explain Capacitance voltage characteristics of the MOS structure 6
OR
8. a) Compare N channel MOSFET with P channel MOSFET 6
b) Draw and explain the V-I characteristics of MOSFET 6
MODULE -V
9. a) What is meant by photo-injection of carriers, and what is the
carrier lifetime of aphoto-generated hole 6
b) Explain the operation of MOS Capacitor with the help of
suitable diagrams 6
OR
10. Explain the operation of JFET and derive the drain and transfer
characteristics 12

[12 /I S/217]

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