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M.Tech. Degree Examination: Instructions

The document outlines the examination structure for the M.Tech. Degree in VLSI Design, specifically for the Semiconductor Devices course. It includes instructions for answering questions from five units, each containing multiple questions related to semiconductor theory and applications. The exam is designed to assess knowledge on topics such as band gap semiconductors, P-N junction behavior, bipolar transistors, MOS capacitors, and JFET characteristics.

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Chetan Cherry
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15 views2 pages

M.Tech. Degree Examination: Instructions

The document outlines the examination structure for the M.Tech. Degree in VLSI Design, specifically for the Semiconductor Devices course. It includes instructions for answering questions from five units, each containing multiple questions related to semiconductor theory and applications. The exam is designed to assess knowledge on topics such as band gap semiconductors, P-N junction behavior, bipolar transistors, MOS capacitors, and JFET characteristics.

Uploaded by

Chetan Cherry
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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[Nov-19]

M.Tech. Degree Examination


I SEMESTER
VLSI Design
SEMICONDUCTOR DEVICES [19EEC-759]
(Effective from the admitted batch 2019-20)
Time: 3 Hours Max.Marks: 60
-----------------------------------------------------------------------------------
Instructions: Each unit carries 12 marks.
Answer all units choosing one question from each unit.
All parts of the unit must be answered in one place only.
------------------------------------------------------------------------------------------
UNIT-I
1. a) Explain about direct and indirect band gap semiconductors in
detail. 6M
b) Consider GaAs sample at T=300K with doping concentration
of NA=0 and ND =1016 (/cm3). Assume complete ionization
and electron and hole mobility are 8500 and 400 (cm2/V-S)
respectively. Calculate the drift current density if the applied
electric field is E=10 (V/cm). 6M
OR
2. a) Write a short note on velocity electric field relations in
semiconductors. 6M
b) Assume that the Fermi energy is 0.27 eV above the valance
band energy. The value of NV for Si at T=300K is 1.041019
(cm-3). Determine thermal equilibrium hole concentration at
T=400K. 3M
c) In Si at T=300K, we found that NA= 4.5 X 104 (cm-3) and
ND= 5 X 1015 (cm-3). Determine the majority and minority
carrier concentration. 3M
UNIT-II
3. a) Discuss the Insulators and Semiconductors with the help of
energy level diagrams. 6M
b) The small signal capacitance of an abrupt P+ - N junction is
1nF at zero bias. If the built–in voltage is 1 volt, the capacitance
at a reverse bias voltage of 99 volts is? 6M
OR
4. a) Discuss high field effects in P-N junction diode behavior. 6M
b) Explain about the modulation and switching ac response in p-n
junction diodes. 6M
UNIT-III
5. a) What are the various sources of noise in bipolar transistor? 6M
b) Describe the operation of bipolar transistor using Ebber-Molls
model. 6M
OR
6. a) Explain why the turn-on transient of a BJT is faster when the
device is driven into oversaturation. 6M
b) Compare and analyze about various configurations of BJT. 6M
UNIT-IV
7. a) A voltage VG is applied across the MOS capacitor with metal
Gate and p – type silicon substrate at 𝑇 = 300 𝐾. The inversion
carrier density (in number of units per unit area) for VG = 0.8𝑉
is 2× ( ) for VG = 1.3𝑉, the inversion carrier density is
4× ( ). What is value of inversion carrier density for
VG = 1.8V? 6M
b) Discuss important effects in long channel MOSFETs. 6M
OR
8. a) Explain about the C-V characteristics of MOS Capacitor with
neat diagrams. 6M
b) Explain about operating regions of N-channel MOSFET and
plot I-V characteristics. 6M
UNIT-V
9. a) Write short notes on JFET transfer and drain characteristics. 6M
b) Explain about PIN photo-detector and LASERS. 6M
OR
10. a) Write short notes on MESFETs and discuss about its channel
length modulation. 6M
b) Explain about the p-channel J-FET and its pinch-off
phenomena. 6M

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