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Electron Devices and Circuits: Unit II: (c) MOSFET
MOSFET: Solved Example Problems for Practice
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Electron Devices and Circuits: Unit II: (c) MOSFET : Examples for Practice
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Examples for Practice
Ex. 4.5.11 : For the transistor shown in the Fig. 4.5.15 the parameters are VT =1V, k = 0.5 mA/V2.
Determine VGS, ID and VDS.
[Ans. : VGS = 1.732 V, VDS = 4.464 V, ID = 0.268 mA]
Ex. 4.5.12 : Calculate VGS, VDS and ID for the Fig. 4.5.16, the MOSFET parameters are :
[Ans. : VGS = 1.552 V, VDS = 5.344 V, ID = 0.776 mA]
b. Constant Current Source Biasing Circuit
• Another way of biasing MOSFET to stabilize the Q-point is to use constant current source instead of
source resistance, as shown in the Fig. 4.5.17 (a). The constant current source is independent of the
MOSFET parameters, thereby stabilizing the Q-point.
• The Fig. 4.5.17 (b) shows the d.c. equivalent circuit for common source circuit biased with a constant
current source.
Ex. 4.5.13 The parameters of the MOSFET in the circuit shown in Fig. 4.5.17 (a) are VT = 0.8 V, k' = 80
µA/v2 and W/L = 3. Design the circuit such that the quiescent values are ID = 500 pA and VD = 5 V.
Assume VDD = + 10V and Vss = - 10 V.
Sol. : The d.c. equivalent circuit is shown in Fig. 4.5.17 (b). Since vi = 0, the gate is at ground potential and
there is no gate current through RG- Assuming the MOSFET is biased in the saturation region, we have
The voltage at the source terminal is VS = - VGS = - 2.84 V.
The drain current can also be written as,
The drain-to-source voltage is
VDS = VD - VS = 5 -(-2.84) = 7.84 V
Validity of assumption :
Since VDS = 784 V > VDS(sat) = = VGS - VT = 2.84 - 0.8 = 2.04 V the MOSFET, is biased in the saturation region,
as initially assumed.
Review Questions
1. Write a note on biasing of MOSFET.
2. Draw and explain the working of common-source biasing circuit for MOSFET.
3. Write a note on constant current source biasing of MOSFET.
Electron Devices and Circuits: Unit II: (c) MOSFET : Tag: : - MOSFET: Solved Example Problems for Practice
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