ISSN: 1863-5598 ZKZ 64717

09-21

Electronics in Motion and Conversion September 2021

X-Series
HVIGBT Modules

YOU CAN BUILD ON IT.

High-Voltage IGBT Modules for High-
Power High-Reliability Applications
 22 Cover Story September 2021

High-Voltage IGBT Modules

for High-Power High-Reliability
Applications
When it comes to high-power applications with highest reliability requirements, HV-IGBTs in the
famous std-type package are still the favorable choice. This article explains the reasons and how this
traditional package is raised to the next level by a variety of innovative technologies.
By Nils Soltau, Eugen Stumpf, Mitsubishi Electric Europe B.V., Ratingen, Germany
Junya Sakai, Hitoshi Uemura, Mitsubishi Electric Corporation, Fukuoka, Japan
Introduction Applications Dedicated to std-type HV-IGBTs
In the second half of the 1990s, development and commercializa-
tion of IGBT power modules for high voltage ratings as 2500 V and HVDC
3300 V has started. Originally, these HV-IGBTs were designed as Considering bulk-power electricity transmission, high-voltage DC
GTO replacement for high-power and high-reliability applications (HVDC) systems based on IGBT power modules have become a ma-
like for example railway traction inverters [1]. Additionally, the use ture technology. They allow more compact plant design and more
in many other high-power applications has followed. flexible operation compared to the classical thyristor-based trans-
mission systems [2]. In state-of-the-art HVDC systems, DC transmis-
The device package, which has been used back then, already had
sion currents reach 2 kA and beyond [3] [4].
the same outline like today’s HV-IGBT power modules. It is the well-
known std-type package with a rectangular footprint of 190 mm STATCOM
times 140 mm. The share of renewable energy sources in our electricity network is
steadily increasing. At the same time, related to the goal for CO2 re-
The advantage of the std-type package is the huge current capacity.
duction, the share of coal generation is decreasing. The loss of iner-
Moreover, as single-switch device, it offers great flexibility for com-
tia by large generators together with the fluctuating power genera-
plex converter topologies. Therefore, MITSUBISHI ELECTRIC devel-
tion from renewables make stabilization of the electricity network
ops power modules in the std-type package further and includes
more difficult. STATCOMs (Static Synchronous Compensators) are
latest chip and package technology.
able to stabilize the network by providing reactive power, active fil-
The newest std-type power modules with state-of-the-art X-Series tering capability, flicker reduction or frequency stabilization. MMC-
chip set are now available for voltage classes from 1700 V to 6500 V. based [5] STATCOMs are highly modular. Single converter branches
Figure 1 shows the different std-type packages. This article reveals can provide inductive or capacitive reactive power of ± 400 MVA for
why and for which applications MITSUBISHI ELECTRIC has devel- example [6].
oped these power modules. Efficiency, power density and robust-
Medium-Voltage Drives
ness of these power modules increased compared to previous gen-
Medium-voltage (MV) drives allow the speed control of high-power
erations. We will have a look at the key-enabling technologies for
motors and generators in the voltage range of 3.3 kV or higher.
this improvement.
These drive systems are used for offshore wind generation, mills,
conveyor belts, compressors or ship propulsion. Usually, these
drives have high reliability requirements. Bidirectional power flow
for recuperating electric energy is often mandatory. For such MV
drives, multilevel converter topologies are frequently used, like
3-level NPC converter [6] or other 5- or 7-level topologies.
All above applications have in common that they require IGBT pow-
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er modules with high current capability. Moreover, end-customers

have highest expectations about converter reliability and robust-
(a) Insulation voltage 6 kV ness of semiconductor power modules within. Especially when con-
sidering 3-, 5-, or 7-level converter topologies, the busbar design
becomes challenging. Hence, the semiconductor power modules
should provide as much freedom as possible when designing the
converter.
Bodo´s Power Systems® ·

The three examples above show that std-type packages are still
the first choice for many applications. The std-type packages en-
able large output currents as 2400 A in the 130x140 mm² package.
Moreover, the package outline itself has proven its suitability in de-
(b) Insulation voltage 10.2 kV cades of field operation. The std-type package originally features
Figure 1: std-type package with latest X-Series chip technology with “1-in-1” single-switch power modules. The single-switches allow
190x140mm² and 130x140mm² footprint packages maximal freedom in the converter design which is particularly im-
portant for multi-level topologies.
 24 Cover Story September 2021

Another use is the development or refurbishment of existing con- The other contribution for efficiency and reliability increase is con-
verter platforms. Outline of the new std-type power modules is sidered by development and utilization of RFC technique in antipar-
compatible with previous power modules generations. Therefore, allel free wheel diode. The dynamic ruggedness and recovery soft-
changing to a newer IGBT generation is easily possible. Newer IGBT ness are two characteristics which are achieved by introduction of
generations allow higher output current, higher power cycling ca- a “Light Punch-Through (LPT) II” and a “Controlling Carrier-Plasma
pability or robustness against humidity. Figure 2 illustrate the pos- Layer (CPL)” [10] [11] [12]. The Figure 4 shows realization of LPT II
sibility to increase the output current by 50 % or reduce size to 2/3 buffer on back side pattern which mainly construes to the softness
with the new X-Series. of diode, to improvement of EMC behavior and finally to rugged-
ness of the total power module.

Figure 2: Output current and compactness improvement of new X-Se-

ries compared to previous H-Series
Technical Features of X-Series std-type Power Modules
CSTBT (III) and RFC diode Figure 4: Structure of RFC diode
The current generation of high-voltage power modules has uti-
RBSOA Capability
lized all advantages of 7th generation chips using CSTBT (III) (Car-
One of the critical events for HVIGBT is turn-off event. Therefore,
rier Stored Trench-Gate Bipolar Transistor) structure of IGBT and
a wide turn-off safe operating area, so called RBSOA (Reverse Bias
RFC (Relaxed Field of Cathode) structure in the free-wheel-diode.
Safe Operating Area), is desired. Usually, the maximum specified
Both chip technologies allow combination of reduced steady state
turn-off current is twice rated current as mentioned in the data-
loss, switching loss and robust switching performance. Both chip
sheet. In order to secure low FIT rate in so called “useful life” of
technologies shift the boarders of technology triangle considering
the bathtub curve of the power module, the actual turn-off capa-
robustness, low total power loss and wide SOA.
bility must be higher than specified value. The following example
The CSTBT is a trade mark of MITSUBISHI ELECTRIC. The CSTBT demonstrates how big the margin between specification and actual
technology is to be considered as improved technology of trench capability is. In this example, turn-off event in one segment of a
structure of IGBT. The trench architecture in power devices is in- 6500 V power module with rated current of 330 A is used. Figure
troduced by MITSUBISHI ELECTRIC in 1994 allowing reduction of 5 represents such event showing turn-off current of 2000A under
ON-state voltage and endurance property for latch up vs. planar worst case conditions of Vcc = 4500 V; Tj = 150°C. The factor be-
IGBT [7]. The main gain by using of trench IGBTs is elimination of tween RBSOA specification (330Ax2) and actual turn-off capability
the parasitic JFET resistance. This technological step in combination is 3. Similar RBSOA margin by using of 1000A/6500V power module
with LPT (light punch through) technology allows significant drop of CM1000HG-130XA is reported in [13], showing margin factor of 4.
VCE(sat) value in IGBT.
The CSTBT forms the n-layer under p-base between trenches, the
n-layer stores carriers; as result, the carrier distribution of the
CSTBT becomes that of the diode. The density of minority chargers
increases, allowing recombination, allowing further reduction of
steady state loss [8]. Figure 3 represents the differences between
conventional trench technology and CSTBT proposed by MITSUBI-
SHI ELECTRIC. The semitransparent n-buried-layer increases the
concentration of minority charges in n-layer.
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The CSTBT (III) development is further improvement of CSTBT

technology with focus on turn-off loss reduction and uniformity of
characteristics like VGE(th) distribution [9]. This improvement allows
further utilization of Si material before substitution by SiC power
devices.
Bodo´s Power Systems® ·

Figure 5: Turn-off switching waveform (green: VGE 10V/div, blue: IC

500A/div, red: VCE 1000V/div, time: 2μs/div)

Short Circuit Robustness

To increase converter robustness and decrease downtime after a
failure, IGBT power modules usually require short circuit withstand
capability. However, not every short circuit has same impact on
the power module. Different classifications are done. For example,
Figure 3: CSTBT in comparison to conventional IGBT short circuit type 1 is present when the short circuit occurs before
 26 Cover Story September 2021

the IGBT turns on. On the contrary, a short circuit type 2 appears Compared to previous generations , the X-Series uses a high-tem-
when the IGBT has already been turned on and is conducting cur- perature solder for the die bonding. Also the solder for attaching
rent [14]. the substrate to the baseplate has been improved together with
a change of the ceramic metallization. Finally, using improved gel
Figure 6 shows the test setup for testing short circuit type 2. IGBT
material enabled further increase of power cycling capability. Pow-
1 is constantly turned off and only used for freewheeling. IGBT 2
er cycling tests as exemplarily given in Figure 8 have been conduct-
is the actual device under test (DUT). IGBT 3, the “short-circuiter”,
ed. It has been confirmed that the combination of the new package
emulates the short circuit together with the short circuit inductance
technologies has enabled a 2.7-times improved power-cycling ca-
LSC, which is substantially lower than the load inductance Lload. To
pability compared to the previous generation [15].
begin the test, the DUT is turned on to ramp up the current. When
the desired testing current is reached, the short-circuiter is turned
on causing a steep current rise. After a specified time, the DUT is
turn-off. The current stored in the inductances LSC and Lload free-
wheels through IGBT 1. When the currents reaches zero, the test
ends.
Figure 7 demonstrates the withstand of a 6.5 kV power module.
The test utilizes one of three segments of CM1000HG-130XA.
Hence, one segment corresponds to a rated current of around 330
A. The short circuit appears when the IGBT segment already con-
ducts 3-times rated current, means 1000 A. During the short circuit
the current rises up to almost 4 kA when the IGBT desaturates and
limits the current. After 10 μs, the DUT successfully turns off the
short circuit and keeps alive. This test demonstrates once more the Figure 8: Power cycling confirmation test of 3.3 kV X-Series device and
high ruggedness of the X-Series power modules. previous generation [15]

Power Cycling Capability Humidity Robustness

Even though X-Series std-type power modules look similar like pre- In last decade, the impact of environmental factors like humidity,
vious generations from the outside, they include many technical temperature and pollution on reliability of power devices has be-
improvements in the inside. Many of these improvements target come a major topic for outdoor applications where such factors
the increase of power cycling capability. can’t be controlled. In this chapter ruggedness of power device on
humidity stress is described. The necessity of such ruggedness is
described in [16] [17].
The silicone gel is the most popular encapsulation material in pow-
er devices. The presence of humidity in silicone gel and applying of
relatively high voltages provoke building of dipoles, so called sur-
face charges Qss. The amount of Qss has significant impact on ef-
ficiency of chip guard ring and finally on avalanche voltage. Figure
9 shows the relationship of surface charges and blocking voltage
capability of 6.5 kV IGBT chip [18]. The reduction of voltage capabil-
ity by humidity could lead to catastrophic and unpredicted failures
which is to be avoided. The immunity against humidity could be
reached by influencing of capsulation material, chip structure and
passivation material [18]. The intrinsic immunity of power chip by
designing of dedicated chips structure is the key step to minimize
influence of humidity on reliability of power device. In 2015 MIT-
SUBISHI ELECTRIC has proposed SCC technology (Surface Charge
Figure 6: Short circuit type 2 test setup Control) [19]. Figure 10 shows the concept of SCC technology. It uses
a semi insulation layer instead of an isolated layer under the pas-
sivation. This technology allows reduction of stray capacitance and
plays an important role as carrier path. Under electrically biased
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conditions, carriers generated by the high electric field accumulate

at the interface between the silicon surface and the semi-insulated
layer as well as the conventional layer. However, the carriers are
swept away through the optimized semi-insulated layer simulta-
neously as shown in Figure 10. There is the temperature depen-
dences of the leakage current density. At room temperature, the
SCC type has slightly higher leakage current density than the type
Bodo´s Power Systems® ·

without the SCC due to an additional leakage current through the

semi-insulated layer. On the other hand, in the high temperature
region the SCC type has the superior characteristics because the
semi-insulated layer redistributes the electric field optimally in the
edge termination area [19]. The verification of robustness degree
could be done by test proposed in [18] (cf. Figure 11). This test pro-
voke dew condensation which is the highest humidity stress within
Figure 7: Withstand of short circuit type 2 using one of three segments a power module. A new automatic condensation test approach was
of CM1000HG-130XA (conditions: Vcc=4200V, Tj=150°C, VGE=15V, proposed by Mitsubishi Electric to perform the cycling condensa-
tw=10μs, Ic (before short circuit)=1000A (3·Inom) tion test more efficient using the humidity chamber [20]. This auto-
September 2021 Cover Story 27

matic test is helpful to derive the acceleration factors between the Line-Up
field conditions and the hard qualification tests. Furthermore, the The overview of X-Series power modules is given in Figure 12. The
lifetime model was proposed in [21] in order understand the influ- X-Series contains devices with blocking voltage ratings 1.7kV, 3.3kV,
ence of humidity and temperature variation at certain humidity on 4.5kV and 6.5kV. The focus in development priority is set on power
degradation of power module. modules with highest current ratings utilizing the package with
the biggest footprint 140x190 mm². But also power devices in so
Nowadays the reliability test combined three stress factors tem-
called middle package 130x140mm² is developed. Now, at least
perature, humidity and electrical field so called H3TRB is a stan-
power modules in two different packages with same current rating
dard high acceleration reliability test at MITSUBISHI ELECTRIC be-
are available. This development is done based on thermal design
fore releasing of HV power modules. Comparing the X-series with
consideration. Power devices according to Figure 12 have finished
conventional design at 85°C/85%RH an improvement by more than
development and successfully passed all reliability tests. The test
100 times was confirmed by testing. From these H3TRB test results
reports are available on request. All used packaging material are in
an unprecedented robustness against 8000 condensation events
line with European Railway Standard for Safety EN45545.
under IEC 60721-3-5 5K2 reference conditions can be derived for
the X-series [22].

Figure 12: Line up of X-Series HVIGBT power modules *Product under

development

www.mitsubishielectric.com

100 years Mitsubishi Electric

Figure 9: Relationship between surface charge Qss and blocking
capability Looking back. Moving ahead.

100 years of innovation.

While looking back on 100 years of the Mitsubishi Electric Group

through the prism of its people, products, solutions and history,
we offer you a variety of solutions as we take our first step to-
ward the next 100 years.
Mitsubishi Electric was founded in 1921, which was a time of
both confusion and hope. Despite this uncertainty, the company
set a clear vision for the next 100 years.
Since our founding, we have indeed faced many challenges,
but our dedication to improve peoples’ lifestyles has remained
steadfast for 100 years. The Mitsubishi Electric Group continues
to grow by contributing to the realization of a vibrant and sus-
tainable society.
Now, as the world faces increasingly dramatic changes, we must
again come together and look ahead to the next 100 years.
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Through our efforts to solve many complex issues facing societ-

ies around the world, our aim is to help create a sustainable and
prosperous society in which everyone can share.
Figure 10: Concept of Surface Charge Control (SCC)
Our challenge for the next 100 years is to work towards this goal
through our business activities, by combining all the strengths
inside and outside of the Group, through continuous techno-
Bodo´s Power Systems® ·

logical innovation and ceaseless creativity.

Synergy is the key and we are ready to improve the future. If
each of us strengthens our individual dedication by finding syn-
ergies with each other, together we will be the driving force to-
wards a brighter tomorrow.
With our unwavering resolve to deliver “Changes for the Better”
empowering our every move, the Mitsubishi Electric Group will
boldly take a new step forward into a better future.
Figure 11: Condensation test procedure
 28 Cover Story September 2021

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Bodo´s Power Systems® ·

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