Special Lecture 1

전자회로
- A gm/ID based Design Methodology -

University of Seoul
School of Advanced Fusion Studies

Min-Jae Seo
[email protected]
Common Design Procedure
❑ Single Stage Amplifier
➢ F. Silveira, D. Flandre and P. G. A. Jespers, "A gm/ID based methodology for the
design of CMOS analog circuits and its application to the synthesis of a silicon-on-
insulator micropower OTA," in IEEE Journal of Solid-State Circuits, vol. 31, no. 9, pp.
1314-1319, Sept. 1996, doi: 10.1109/4.535416.

❑ Differential Amplifier
➢ P. R. Gray and R. G. Meyer, "MOS operational amplifier design-a tutorial overview,"
in IEEE Journal of Solid-State Circuits, vol. 17, no. 6, pp. 969-982, Dec. 1982, doi:
10.1109/JSSC.1982.1051851.

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 A gm/ID based
Design Methodology
Introduction
❑ Key Parameters for an Amplifier Design
➢ Conventional → Overdrive voltage

𝑔𝑚 𝐼𝐷
➢ New → VS
𝐼𝐷 𝑊/𝐿

❑ The reason why we use gm/Id design methodology

1. It is strongly related to the performances of analog circuits.
2. It gives an indication of device operating region.
3. It provides a tool for calculating the transistors dimensions.

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Performance Metrics of Interest
❑ Transit Frequency (𝒘𝒕 , or Unity gain frequency 𝒘𝒖 )
➢ The maximum frequency for amplifying operation
𝒈𝒎
𝒘𝒕 =
𝑪𝒈𝒈

❑ 3-dB Frequency (𝒘−𝟑𝒅𝒃 )

𝟏 𝟏
𝒘−𝟑𝒅𝑩 = 𝒇−𝟑𝒅𝑩 =
𝑹𝒐𝒖𝒕 𝑪𝑳 𝟐𝝅 ∙ 𝑹𝒐𝒖𝒕 ∙ 𝑪𝑳

❑ Intrinsic Gain (𝑨𝟎 )

𝒈𝒎
𝑨𝟎 = 𝒈𝒎 𝒓𝟎 =
𝒈𝒅𝒔

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Performance Metrics of Interest – ( II )
❑ Transconductance Efficiency
➢ It is the efficiency of the MOS transistor to translate given current into an equivalent
transconductance
𝒈𝒎
[𝐒/𝐀]
𝑰𝑫
❑ Current Density

𝑰𝑫 𝑰𝑫
[𝐀/□] or [𝐀/𝐮𝐦]
𝑾/𝑳 𝑾

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Design Tradeoff: gm/Id versus wt
❑ Vgs (Vov) sweep

High Power Efficiency High Speed

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Design Tradeoff: gm/Id versus wt – ( II )
❑ Product of gm/Id and wt
➢ Optimal Point?

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General Design Procedure
1. Determine gm (from design objectives)

2. Pick L
➢ Short channel → high speed, large mismatch
➢ Long channel → high intrinsic gain, small mismatch

3. Pick gm/ID(or wt)

➢ Large gm/ID → low power, large signal swing
➢ Small gm/ID → high speed

4. Determine ID (from gm and gm/ID)

5. Determine W (from ID/W, current density chart)

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In Our Lab.. (GPDK 45nm Process)
1. Pick L

2. Pick gm/ID(or wt)

3. Determine gm (from design objectives)

4. Determine ID (from gm and gm/ID)

5. Determine W (from ID/W, current density chart)

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In Our Lab.. (GPDK 45nm Process) – ( II )
1. Pick L = 0.5um
➢ Considering threshold voltage (Vth) variation

2. Pick gm/ID(or wt) = 10

➢ Considering the operating region(moderate inversion), gain and speed

wt
gm/Id

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In Our Lab.. (GPDK 45nm Process)
1. Pick L = 0.5um
2. Pick gm/ID(or wt) = 10
3. Determine gm (from design objectives)
𝟏
𝒇−𝟑𝒅𝑩 = , 𝑨 = 𝒈𝒎 𝑹𝒐𝒖𝒕
𝟐𝝅 ∙ 𝑹𝒐𝒖𝒕 ∙ 𝑪𝑳 𝒗
4. Determine ID (from gm and gm/ID)
➢ ID = gm/10 → ‘10’ is our value
5. Determine W (from ID/W, current density chart)
➢ ID/W = 8.3 @ gm/ID = 10
➢ W = ID/8.3

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Design Example
Design Example
❑ Design Target
➢ Common Source(CS) Amplifier

Specification
Process TT
Voltage (VDD) 1.8V
Temperature 25ºC
Av -5
f-3dB 100MHz
CL 5pF

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Design Example – ( II )
1. Pick L = 0.5um
2. Pick gm/ID(or wt) = 10
3. Determine gm (from design objectives)

① Rout from 3-dB frequency

𝟏
𝒇−𝟑𝒅𝑩 = = 𝟏𝟎𝟎𝐌𝐇𝐳 @ 𝑪𝑳 = 𝟓𝒑𝑭
𝟐𝝅 ∙ 𝑹𝒐𝒖𝒕 ∙ 𝑪𝑳
𝟏
∴ 𝑹𝒐𝒖𝒕 = = 𝟑𝟏𝟖. 𝟑𝒐𝒉𝒎
𝟐𝝅 ∙ 𝒇−𝟑𝒅𝑩 ∙ 𝑪𝑳

② gm from gain equation

𝑨𝒗 = −𝒈𝒎 𝑹𝒐𝒖𝒕 = −𝟓
𝑨𝒗
∴ 𝒈𝒎 = − = 𝟏𝟓. 𝟕 𝒎𝑺
𝑹𝒐𝒖𝒕

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Design Example – ( III )
1. Pick L = 0.5um
2. Pick gm/ID(or wt) = 10
3. Determine gm = 15.7 mS
4. Determine ID (from gm and gm/ID)
➢ Because gm/ID is 10 and gm 15.7 mS ➔ ID = 1.57mA
5. Determine W (from ID/W, current density chart) = ID/8.3 = 189um
y축 : ID/W Vgs = Sweep
Vds = 0.9

ID/W = 8.3 @ gm/ID = 10

from SPICE simulation x축 : gm/ID

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Design Example – ( IV )
1. Pick L = 0.5um
2. Pick gm/ID(or wt) = 10
3. Determine gm = 15.7 mS
4. Determine ID (from gm and gm/ID) = 1.57mA
5. Determine W (from ID/W, current density chart) = 189um

Specification
= 318.3ohm? Process TT
Voltage (VDD) 1.8V
Temperature 25ºC
Av -5
W = 189um f-3dB 100MHz
L = 0.5um
CL 5pF

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Design Example – ( V )
❑ Determine Rd
➢ Rout ≠ Rd
➢ Rout = 𝑅𝑑 ∥ 𝑟0 = 𝑅𝑑 ∥ 1/𝑔𝑑𝑠 → 318.3 = 𝑅𝑑 ∥ 607𝑘
➢ Rd = 318.5

y축 : ro = 1/gds from SPICE simulation

Vgs = Sweep
Vds = 0.9

607kohm

x축 : gm/ID

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Design Example – ( VI )
1. Pick L = 0.5um
2. Pick gm/ID(or wt) = 10
3. Determine gm = 15.7 mS
4. Determine ID (from gm and gm/ID) = 1.57mA
5. Determine W (from ID/W, current density chart) = 189um

Specification
= 318.5ohm Process TT
Voltage (VDD) 1.8V
Temperature 25ºC
Vb = 0.6V Av -5

W = 189um f-3dB 100MHz

L = 0.5um CL 5pF

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Design Results
❑ Schematic & Testbench

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Design Results – ( II )
❑ Schematic & Testbench

Av = 13.4dB = 4.7
@ Low frequency
Av = 10.6dB
@ -3dB frequency 100MHz

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