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IE2024-End Sem Question

The document outlines the structure and content of the Autumn End-Semester Examination 2024 for the Introduction to Electronics course at IIT Bhubaneswar. It includes various questions related to common emitter and collector amplifiers, MOSFET and BJT comparisons, DC operating points, small signal circuits, and oscillator circuits. The exam consists of theoretical and calculation-based questions with a total of 50 marks.

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41 views2 pages

IE2024-End Sem Question

The document outlines the structure and content of the Autumn End-Semester Examination 2024 for the Introduction to Electronics course at IIT Bhubaneswar. It includes various questions related to common emitter and collector amplifiers, MOSFET and BJT comparisons, DC operating points, small signal circuits, and oscillator circuits. The exam consists of theoretical and calculation-based questions with a total of 50 marks.

Uploaded by

srikanthjois04
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Indian Institute of Technology, Bhubaneswar

School of Electrical and Computer Sciences


Introduction to Electronics (EC2L001)

Autumn End-Semester Examination 2024


Time: 3 hours Maximum Marks:50

1. For common emitter amplifier and common collector amplifier


a) Draw the circuit diagrams (separately). (2+2 = 4 marks)
a) Draw the small-signal circuit diagram and derive the expression of
their gains of the two amplifiers. (4+4 = 8 marks)
2. For the following CE amplifier given: VDD =10 V, VBE(on) = 0.7 V, RS =
1 kΩ, RL1 = RL2 =10 kΩ, CC1 = 5 µF, CC2 = 10 µF, CL = 1 nF, RB2 =15
kΩ, RB1 =80 kΩ, RC =3 kΩ, RE =0.4 kΩ and β = 100.
a) Find the DC operating points (IB , IC and VCE ). (3 marks)
b) Draw the small signal equivalent model and write down the expression
of the mid-band gain and calculate its value. (3+1 = 4 marks)
c) Calculate fH and fL . (2+2=4 marks)
VDD

RB1 RC
vout
RS CC1
CC2 RL CL
vs
RB2
RE

3. Mention one similarity and one difference between MOSFET and BJT
devices. (1+1 = 2 marks)

Please go on to the next page. . .


EC2L001 Introduction to Electronics Page 2 of 2

4. For the circuit below, given: VDD = 10 V, RB1 = 860 kΩ, RC1 = 6 kΩ,
RS = 2.5 kΩ, R1 =R2 =R3 =R4 = 1 kΩ, RB2 = 100 kΩ, RE = 3 kΩ and RC2 =
1 KΩ. If β = 100 for both the transistor,
a) Calculate the DC operating current across all the resistors. (6 marks)
b) Draw the small signal circuits (for BJT stages only) and find the
expression of the individual gains of the three stages. (5 marks)
c) Find the expression of the total gain and its value. (2+1=3 marks)
VDD VDD

RB1 RC1 RC2


+ RB2
RS R1
−

CC R2 R3
vs Vout
RE
R4

5. In the oscillator circuit given below C1 = C2 = C3 = C4 =10 nF, R1 =


500 kΩ, R2 = 0.2 kΩ, for BJT β = 50, R3 =R4 =R5 and R7 =R8 .
a) Find the value of oscillating frequency, if the phase shift provided C1
is two times of C3 and the individual phase shift provided by C2 and C4
are 1.5 times to that of C3 . (5 marks)
b) Find values of R5, R6, R7 and the ratio R10 /R9 . (3+3=6 marks)

R10
R9
−
R7
+
VDD=10V
R8

R1
R5
C1
− R4 −
−
+
C4
+
R3 C2
+
R6 C3 R2

End of exam

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