FT2010
FT2010
APPLICATION CIRCUIT
To Battery To Battery
Cs Cs
1uF 1uF
Ci VDD Ci VDD
Ri Ri
INN INN INN INN
VON VON
Differential Input Single-ended Input
ft2010 ft2010
INP INP INP
Ci Ri VOP Ci Ri VOP
ON SHDN ON SHDN
GND GND
OFF OFF
SHDN 1 8 VON
NC 2 7 GND
INP 3 6 VDD
INN 4 5 VOP
ft2010M
(TOP VIEW)
NC 2 No internal connection.
GND 7 Ground.
ORDERING INFORMATION
PART NUMBER TEMPERATURE RANGE PACKAGE
ft2010M -40°C to +85°C MSOP-8L
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VDD
PVDD
150KΩ
Output VON
VDD Driver
INN
PWM
Modulator
INP
Output VOP
Driver
PGND
150KΩ
SHDN Shutdown Startup
Control Protection OCP
Logic
300KΩ BIAS OSC
Note:
Total Gain=2x150KΩ/Ri
GND
ELECTRICAL CHARACTERISTICS
TA=25°C, VDD = 3.6V, RL=8Ω, Gain = 2V/V, RI=150kΩ, CI=0.1µ F, f=1kHz, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
VUVLD Power Down Threshold Voltage VDD from High to Low 2.0 V
VDD=5V, No Load
1.5 2.2 4.0 mA
Inputs AC-Grounded
IDD Quiescent Current
VDD=3.6V, No Load
1.4 2.0 3.6 mA
Inputs AC-Grounded
Ci Ri
+ INP VOP +
Measurement 33KHz Measurement
Output Ci Ri ft2010 Low pass Input
_ Filter _
INN VON
LOAD
VDD GND
1uF
+
VDD
_
Notes: 1) A 33µH inductor is placed in series with the load resistor to emulate a small speaker for efficiency measurements;
2) The 33kHz lowpass filter is added onto the audio outputs, VOP and VON even if the analyzer has an internal lowpass
filter. An RC lowpass filter (100Ω, 47nF) is used on each output for the data sheet graphs.
4 2.5
3.5
2
3 RL=4Ω+33uH, THD+N=1% RL=8Ω+33uH, THD+N=1%
Output Power (W)
1.5 1
1
0.5
0.5
0 0
2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 4 4.5 5 5.5
Supply Voltage (V) Supply Voltage (V)
Figure 4: Output Power vs. Supply Voltage Figure 5: Output Power vs. Supply Voltage
10000 5
4.5
4
Quiescent Current(mA)
3.5
Output Power(mW)
1000
3 No Load
2.5
2
100 VDD=5V, RL=8Ω+33uH
1.5
VDD=5V, RL=4Ω+33uH
1
0.5
10 0
100 1000 10000 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (mVrms) Supply Voltag (V)
Figure 6: Output Power vs. Input Voltage Figure 7: Quiescent Current vs. Supply Voltage
100% 100%
90% 90%
80% 80%
70% 70%
Efficiency(%)
Efficiency(%)
60% 60%
50% 50%
40% 40%
30% 30%
VDD=5V, RL=8Ω+33uH VDD=3.6V, RL=8Ω+33uH
20% 20%
10% 10%
0% 0%
0 200 400 600 800 1000 1200 1400 1600 1800 0 100 200 300 400 500 600 700 800 900
Output Power(mW) Output Power(mW)
Figure 8: Efficiency vs. Output Power Figure 9: Efficiency vs. Output Power
100% 100%
90% 90%
80% 80%
70% 70%
Efficiency(%)
Efficiency(%)
60% 60%
50% 50%
40% 40%
30% 30%
VDD=3.6V, RL=8Ω+33uH VDD=3.6V,RL=4Ω+33uH
20% 20%
10% 10%
0% 0%
0 100 200 300 400 500 600 700 800 900 0 200 400 600 800 1000 1200 1400 1600
Output Power(mW) Output Power(mW)
Figure 10: Efficiency vs. Output Power Figure 11: Efficiency vs. Output Power
100 100
10 10
VDD=5V, RL=8Ω+33uH VDD=3.6V, RL=8Ω+33uH
THD+N(%)
THD+N(%)
1 1
0.1 0.1
0.01 0.01
10 100 1000 10000 10 100 1000 10000
Output Power (mW) Output Power (mW)
Figure 12: THD+N vs. Output Power Figure 13: THD+N vs. Output Power
100 100
10 10
VDD=5.0V,RL=4Ω+33uH VDD=3.6V,RL=4Ω+33uH
THD+N(%)
THD+N(%)
1 1
0.1 0.1
0.01 0.01
10 100 1000 10000 10 100 1000 10000
Output Power (mW) Output Power (mW)
Figure 14: THD+N vs. Output Power Figure 15: THD+N vs. Output Power
10.00 10.00
THD+N(%)
THD+N(%)
0.10 0.10
0.01 0.01
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)
Figure 16: THD+N vs. Frequency Figure 17: THD+N vs. Frequency
0
-10
-20
VDD =4±0.2V, RL=8Ω+33uH, Input AC-Grounded
-30
PSRR(dB)
-40
-50
-60
-70
-80
10 100 1000 10000 100000
Frequency(Hz)
Figure 18: PSRR vs. Frequency Figure 19: Auto Recovering SCP Waveforms
Figure 20: Broadband Output Spectrum Figure 21: Audio-Band Output Spectrum
APPLICATION INFORMATION
The ft2010 is a high efficiency, filterless, Class-D audio power amplifier with auto-recovering short-circuit
protection. The ft2010 operates from 2.7 to 5.5V supply. When powered with 5V supply voltage, the ft2010
is capable of delivering up to 3W into a 4Ω load or 1.8W into an 8Ω load, with 10% THD+N.
As a Class-D audio amplifier, the ft2010 features 90% high efficiency and 75dB PSRR at 217Hz which
make the device ideal for battery-supplied, high-quality audio applications. One of the key benefits of the
ft2010 over typical Class-D audio power amplifiers is it generates much less EMI emissions, thus greatly
simplifying the system design for portable applications. Also included are the circuitry to minimize turn-on
and turn-off transients (also known as pops and clicks) and auto-recovering over-current protection (OCP)
and short-circuit protection (SCP).
Furthermore, the ft2010 includes under-voltage lockout to ensure proper operation when the device is first
powered up; and thermal-overload protection to safeguard the die temperature during operation.
Filterless Design
Traditional Class-D amplifiers require an output filter. The filter adds cost and the size of the system board.
Furthermore, it degrades the performance of power efficiency and THD+N. The ft2010’s filterless
modulation scheme does not require an output filter. Because the switching frequency of the ft2010 is well
beyond the bandwidth of most speakers, voice coil movement due to the switching frequency is very small.
Use a speaker with a series inductance larger than 10µH. An 8Ω speaker typically exhibits a series
inductance in the range from 20µH to 100µH.
However, LC filter is required when the trace between the ft2010 and the speaker exceeds 100mm. Long
trace acts like tiny antenna and generates EMI emissions which may result in FCC and CE certification
failures.
The ft2010 does not require an LC output filter for short connections from the amplifier to the speaker.
However, additional EMI suppressions can be made by use of a ferrite bead in conjunction with a capacitor,
as shown in Figure 22. Choose a ferrite bead with low DC resistance (DCR) and high impedance (100Ω ~
330Ω) at high frequencies (>100MHz). The current flowing through the ferrite bead must be also taken into
consideration. The effectiveness of ferrites can be greatly aggravated at much lower than the rated current
values. Choose a ferrite bead with a rated current value no less than 2A. The capacitor value varies based
on the ferrite bead chosen and the actual speaker lead length. Choose a capacitor less than 1nF based on
EMI performance.
Ferrite
Chip Bead
VOP
FB1 220Ω/2A C1
1nF
Ferrite
Chip Bead
VON
FB2 220Ω/2A C2
1nF
Shutdown Operation
In order to reduce power consumption while the device is not in use, the ft2010 includes shutdown circuitry
to de-bias all the internal circuitry when the SHDN pin is pulled low. During shutdown, the supply current of
the ft2010 is reduced less than 0.1µA, typically.
The input resistors (RI) set the gain of the amplifier according to Equation 1.
(1)
The matching of the input resistors is a crucial consideration for a fully differential amplifier. The balance of
the differential outputs with respect to the common-mode voltage strongly depends on the matching of the
input resistors. The CMRR, PSRR, and the cancellation of the even-order harmonics will be significantly
degraded if the mismatch of the input resist occurs. Therefore, it is recommended to use the resistors with
1% tolerance or better to keep the performance optimized. Note that the matching tolerance of the input
resistors is much more important than the absolute tolerance. Place the input resistors as close to the
ft2010 as possible to minimize the noise injected onto the high-impedance input nodes.
(2)
The corner frequency directly influences the low frequency signals and consequently determines output
bass quality.
PCB Layout
As the output power increases, the interconnect resistance (PCB traces and wires) among the audio
amplifier, load, and power supply creates a voltage drop. The voltage loss on the traces between the ft2010
and the load results in lower output power and lower efficiency. The higher trace resistance between the
supply and the ft2010 has the same effect as a poorly regulated supply, increasing the voltage ripples on
the supply line and also reducing the peak output power. The effect of the residual trace resistance will be
intensified as the output current increases. To maintain the highest output voltage swing for a maximum
output power, the PCB traces that connect the output pins to the load and the supply pins to the power
supply should be as wide and short as possible to minimize trace resistance.
The use of power and ground planes will give the best THD+N performance. While reducing trace
resistance, the use of power planes also creates parasite capacitors that help filter the power supply line.
The inductive nature of the speakers can also result in overshoots on one or both edges, clamped by the
parasitic diodes to ground and VDD in each case. From an EMI standpoint, this is the highly unfavorable
waveform that will radiate or conduct to other components on the system board and cause interference. It is
essential to keep the power and output traces short and well shielded if possible. Use of ground planes,
beads, and micro-strip layout techniques are all useful in preventing unwanted interference.
As the distance from the ft2010 to the speaker increases, the amount of EMI radiation will increase since
the output wires or traces acting as antenna become more efficient with their lengths. What is acceptable
EMI is highly application specific. Ferrite bears placed close to the ft2010 may be needed to reduce EMI
radiation. The value of the ferrite bears is also application specific.
VDD
+ C3 Cs
47UF 1uF
1 8
SHDN SHDN VON
2 7 LS1
NC GND
C1 0.1uF R1 47K ft2010M
3 6
INP INP VDD
SPEAKER
C2 0.1uF R2 47K
4 5
INN INN VOP
C1=C2, R1=R2
Gain=300K/R1
VDD
+ C3 Cs
47UF 1uF
1 8
SHDN SHDN VON
C1=C2, R1=R2
Gain=300K/R1
VDD
SHDN + C3 Cs
47UF 1uF
Differential Input 1
C1 0.1uF R1 47K 1 8
SHDN VON
INP1
2 7 LS1
C2 0.1uF R2 47K NC GND
ft2010M
INN1
3 6
INP VDD
SPEAKER
Differential Input 2
4 5
C3 0.1uF R3 47K INN VOP
INP2
VDD
+ C3 Cs
47UF 1uF
SHDN
L+R Inputs
1 8
SHDN VON
R1 56K
C1 0.1uF 2 7 LS1
L-IN NC GND
R2 56K ft2010M
C2 0.1uF 3 6
R-IN INP VDD
SPEAKER
R3 28K
C3 0.2uF 4 5
INN VOP
C3=C1+C2, R3=R1*R2/(R1+R2)
Gain-L=300K/R1, Gain-R=300K/R2
PHYSICAL DIMENSIONS
E1:3.00± 0.10
E:4.90± 0.20
B B
e:0.65± 0.10
A3:0.35± 0.10
All dimensions are in millimeters
IMPORTANT NOTICE
1. Disclaimer: The information in document is intended to help you evaluate this product. Fangtek, LTD.
makes no warranty, either expressed or implied, as to the product information herein listed, and reserves
the right to change or discontinue work on this product without notice.
2. Life support policy: Fangtek’s products are not authorized for use as critical components in life support
devices or systems without the express written approval of the president and general counsel of Fangtek
Inc. As used herein
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to
the user.
A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
3. Fangtek assumes no liability for incidental, consequential or special damages or injury that may result
from misapplications or improper use or operation of its products
4. Fangtek makes no warranty or representation that its products are subject to intellectual property license
from Fangtek or any third party, and Fangtek makes no warranty or representation of non-infringement with
respect to its products. Fangtek specifically excludes any liability to the customer or any third party arising
from or related to the products’ infringement of any third party’s intellectual property rights, including
patents, copyright, trademark or trade secret rights of any third party.
5. The information in this document is merely to indicate the characteristics and performance of Fangtek
products. Fangtek assumes no responsibility for any intellectual property claims or other problems that may
result from applications based on the document presented herein. Fangtek makes no warranty with respect
to its products, express or implied, including, but not limited to the warranties of merchantability, fitness for
a particular use and title.
6. Trademarks: The company and product names in this document may be the trademarks or registered
trademarks of their respective manufacturers. Fangtek is trademark of Fangtek, LTD.
CONTACT INFORMATION
Fangtek Electronics (Shanghai) Co., Ltd
Tel: +86-21-61631978
Fax: +86-21-61631981
Website: www.fangtek.com.cn