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FT2010

The ft2010 is a high-efficiency Class-D audio power amplifier that operates with a supply voltage of 2.7V to 5.5V and features auto-recovering short-circuit protection. It can deliver up to 3W into a 4Ω load at 5V with low total harmonic distortion and high efficiency of up to 90%. The amplifier is suitable for battery-powered applications and includes features such as low quiescent current and thermal overload protection.

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13 views18 pages

FT2010

The ft2010 is a high-efficiency Class-D audio power amplifier that operates with a supply voltage of 2.7V to 5.5V and features auto-recovering short-circuit protection. It can deliver up to 3W into a 4Ω load at 5V with low total harmonic distortion and high efficiency of up to 90%. The amplifier is suitable for battery-powered applications and includes features such as low quiescent current and thermal overload protection.

Uploaded by

ad hicham
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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You are on page 1/ 18

ft2010

3W Class-D Audio Power Amplifier


with Auto-Recovering Short-Circuit Protection

GENERAL DESCRIPTION FEATURES


The ft2010 is a high efficiency, filterless, Class-D  Filterless Class-D operation
audio amplifier with auto-recovering short-circuit  High efficiency up to 90%
protection. It operates from 2.7V to 5.5V supply.  Maximum output power at 5V supply
When powered with 5V supply voltage, the ft2010 3.0W (4Ω load, 10% THD+N)
is capable of delivering 3W into a 4Ω load or 1.8W
1.8W (8Ω load, 10% THD+N)
into an 8Ω load, with 10% THD+N.
 Maximum output power at 3.6V supply
As a Class-D audio amplifier, the ft2010 features 1.5W (4Ω load, 10% THD+N)
90% efficiency and 75dB PSRR at 217Hz which
0.9W (8Ω load, 10% THD+N)
make the device ideal for battery-powered
 Low THD+N: 0.05%
high-quality audio applications.
(VDD=3.6V, f=1kHz, RL=8Ω, PO=0.5W)
One of the key benefits of the ft2010 over typical
 Low quiescent current: 2mA @ VDD=3.6V
Class-D audio power amplifiers is it generates
 Low shutdown current < 0.1µA
much less EMI emissions, thus greatly simplifying
the system design for portable applications. Also  High PSRR: 75dB @ 217Hz
included is the over-current and short-circuit  No bypass capacitor required for the
protection with auto-recovery, which ensures the common-mode bias
device be operated safely and reliably without the  Under-voltage lockout
need for system interaction.  Auto-recovering over-current and
short-circuit protection
APPLICATIONS  Thermal overload protection
 Mobile Phones  Available in MSOP-8L package
 Portable Navigation Devices
 Multimedia Internet Devices
 MP3/4

APPLICATION CIRCUIT
To Battery To Battery
Cs Cs
1uF 1uF

Ci VDD Ci VDD
Ri Ri
INN INN INN INN
VON VON
Differential Input Single-ended Input
ft2010 ft2010
INP INP INP
Ci Ri VOP Ci Ri VOP

ON SHDN ON SHDN
GND GND
OFF OFF

Figure 1: Typical Audio Amplifier Application Circuit

NOV, 2013 www.fangtek.com.cn 1


ft2010

PIN CONFIGURATION AND DESCRIPTION

SHDN 1 8 VON

NC 2 7 GND

INP 3 6 VDD

INN 4 5 VOP

ft2010M
(TOP VIEW)

PIN NAME PIN # DESCRIPTION


SHDN 1 Active low shutdown control.

NC 2 No internal connection.

INP 3 Positive audio input terminal.

INN 4 Negative audio input terminal.

VOP 5 Positive BTL audio output terminal.

VDD 6 Power supply.

GND 7 Ground.

VON 8 Negative BTL audio output terminal.

ORDERING INFORMATION
PART NUMBER TEMPERATURE RANGE PACKAGE
ft2010M -40°C to +85°C MSOP-8L

NOV, 2013 http://www.fangtek.com.cn 2


ft2010

ABSOLUTE MAXIMUM RATINGS


PARAMETER UNIT
Supply Voltage -0.3V to 6.0V

All Other Pins -0.3V to VDD+0.3V

Power Dissipation Internally Limited

ESD Rating (HBM) 4000V

Junction Temperature 150°C

Storage Temperature -45°C to 150°C


Soldering Information
Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
Note: Stresses beyond those listed under absolute maximun ratings may cause permanent damage to the device. These are stress ratings only,and

functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not

implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

PACKAGE DISSIPATION RATINGS


PACKAGE Θ JA UNIT
MSOP-8L 150 °C/W

RECOMMENDED OPERATING CONDITIONS


PARAMETER MIN TYP MAX UNIT

Supply Voltage, VDD 2.7 5.5 V

Ambient Free-Air Temperature, TA -40 +85 °C

Minimum Speaker Impedance, RLOAD 3.2 Ω

NOV, 2013 http://www.fangtek.com.cn 3


ft2010

FUNCTIONAL BLOCK DIAGRAM

VDD
PVDD
150KΩ

Output VON
VDD Driver
INN
PWM
Modulator
INP
Output VOP
Driver
PGND
150KΩ
SHDN Shutdown Startup
Control Protection OCP
Logic
300KΩ BIAS OSC
Note:
Total Gain=2x150KΩ/Ri
GND

Figure 2: Simplified Function Block Diagram of ft2010

NOV, 2013 http://www.fangtek.com.cn 4


ft2010

ELECTRICAL CHARACTERISTICS
TA=25°C, VDD = 3.6V, RL=8Ω, Gain = 2V/V, RI=150kΩ, CI=0.1µ F, f=1kHz, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

VDD Supply Voltage 2.7 5.5 V

VUVLU Power Up Threshold Voltage VDD from Low to High 2.2 V

VUVLD Power Down Threshold Voltage VDD from High to Low 2.0 V
VDD=5V, No Load
1.5 2.2 4.0 mA
Inputs AC-Grounded
IDD Quiescent Current
VDD=3.6V, No Load
1.4 2.0 3.6 mA
Inputs AC-Grounded

ISD Shutdown Current SHDN Low 0.1 µA

VSDIH SHDN Input High 1.3 V

VSDIL SHDN Input Low 0.4 V

Maximum Output Power THD+N=10% 1.8


W
VDD=5V, Load=8Ω THD+N=1% 1.4
PO
Maximum Output Power THD+N=10% 0.9
W
VDD=3.6V, Load=8Ω THD+N=1% 0.7

Maximum Output Power THD+N=10% 3.0


W
VDD=5V, Load=4Ω THD+N=1% 2.4
PO
Maximum Output Power THD+N=10% 1.5
W
VDD=3.6V, Load=4Ω THD+N=1% 1.2
AV Gain 300kΩ / Ri V/V

RO Output Resistance in Shutdown SHDN Low 2 kΩ


Mode
RSHDN SHDN Input Resistance 300 kΩ
VREF VREF Voltage VDD/2 V

Total Harmonic Distortion + Noise VDD=3.6V, PO=0.5W 0.05


%
Load=8Ω VDD=5V, PO=1W 0.07
THD+N
Total Harmonic Distortion + Noise VDD=3.6V, PO=1W 0.06
%
Load=4Ω VDD=5V, PO=2W 0.08
Bandwidth = 20Hz ~ 20kHz
VN Output Voltage Noise 85 µVRMS
Inputs AC-Grounded
VOS Output Offset Voltage Inputs AC-Grounded +5 mV

η Efficiency VDD=5V, PO=1W 90 %

PSRR Power Supply Rejection Ratio f=217Hz 75 dB

CMRR Common Mode Rejection Ratio 70 dB

TSTUP Startup Time 35 ms

fPWM PWM Carrier Frequency 800 kHz


fJITTER PWM Frequency Jittering Range ±24 kHz

ILIMIT Over-Current Threshold VDD=5V 2.0 A


TOTP Over-Temperature Threshold 160 C
THYS Over-Temperature Hysteresis 30 C

NOV, 2013 http://www.fangtek.com.cn 5


ft2010

TEST SETUP FOR PERFORMANCE TESTING

Ci Ri
+ INP VOP +
Measurement 33KHz Measurement
Output Ci Ri ft2010 Low pass Input
_ Filter _
INN VON
LOAD

VDD GND

1uF
+
VDD
_

Figure 3: Test Block Diagram

Notes: 1) A 33µH inductor is placed in series with the load resistor to emulate a small speaker for efficiency measurements;
2) The 33kHz lowpass filter is added onto the audio outputs, VOP and VON even if the analyzer has an internal lowpass
filter. An RC lowpass filter (100Ω, 47nF) is used on each output for the data sheet graphs.

NOV, 2013 http://www.fangtek.com.cn 6


ft2010

TYPICAL PERFORMANCE CHARACTERISTICS


TA=25°C, VDD = 3.6V, Gain = 2V/V, RI=150kΩ, CI=0.1µ F, f=1kHz, ft2010M, unless otherwise noted.

List of Performance Characteristics


DESCRIPTION CONDITIONS FIGURE #
RL=4Ω+33µH, THD+N=1% & 10% 4
Output Power vs. Supply Voltage
RL=8Ω+33µH, THD+N=1% & 10% 5
Output Power vs. Input Voltage VDD=5.0V, RL=4Ω+33µH & 8Ω+33µH 6
Quiescent Current vs. Supply Voltage Input AC-Grounded, No Load 7
VDD=5.0V, RL=8Ω+33µH 8
VDD=3.6V, RL=8Ω+33µH 9
Efficiency vs. Output Power
VDD=5.0V, RL=4Ω+33µH, 10
VDD=3.6V, RL=4Ω+33µH 11
VDD=5.0V, RL=8Ω+33µH 12
VDD=3.6V, RL=8Ω+33µH 13
THD+N vs. Output Power
VDD=5.0V, RL=4Ω+33µH 14
VDD=3.6V, RL=4Ω+33µH 15
VDD=5.0V, Po=1W, RL=4Ω+33µH & 8Ω+33µH 16
THD+N vs. Frequency
VDD=3.6V, Po=0.5W, RL=4Ω+33µH & 8Ω+33µH 17
PSRR vs. Input Frequency VDD=4.0V, RL=8Ω+33µH, Input AC-Grounded 18
Auto-Recovering SCP Waveforms VDD=4.0V, RL=8Ω+33µH, Vin=0.1VRMS 19
Broadband Output Spectrum VDD=4.0V, No Load, Vin=0.25VRMS 20
Audio-Band Output Spectrum VDD=4.0V, No Load, Vin=0.25VRMS 21

NOV, 2013 http://www.fangtek.com.cn 7


ft2010

TYPICAL PERFORMANCE CHARACTERISTICS (Cont’d)

Output Power vs Supply Voltage Output Power vs Supply Voltage

4 2.5

3.5
2
3 RL=4Ω+33uH, THD+N=1% RL=8Ω+33uH, THD+N=1%
Output Power (W)

Output Power (W)


2.5 RL=4Ω+33uH, THD+N=10% RL=8Ω+33uH, THD+N=10%
1.5
2

1.5 1

1
0.5
0.5

0 0
2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 4 4.5 5 5.5
Supply Voltage (V) Supply Voltage (V)

Figure 4: Output Power vs. Supply Voltage Figure 5: Output Power vs. Supply Voltage

Output Power vs Input Voltage Quiescent Current vs Supply Voltage

10000 5

4.5

4
Quiescent Current(mA)

3.5
Output Power(mW)

1000
3 No Load
2.5

2
100 VDD=5V, RL=8Ω+33uH
1.5
VDD=5V, RL=4Ω+33uH
1

0.5
10 0
100 1000 10000 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (mVrms) Supply Voltag (V)

Figure 6: Output Power vs. Input Voltage Figure 7: Quiescent Current vs. Supply Voltage

Efficiency vs Output Power Efficiency vs Output Power

100% 100%
90% 90%
80% 80%
70% 70%
Efficiency(%)
Efficiency(%)

60% 60%
50% 50%
40% 40%
30% 30%
VDD=5V, RL=8Ω+33uH VDD=3.6V, RL=8Ω+33uH
20% 20%
10% 10%
0% 0%
0 200 400 600 800 1000 1200 1400 1600 1800 0 100 200 300 400 500 600 700 800 900
Output Power(mW) Output Power(mW)

Figure 8: Efficiency vs. Output Power Figure 9: Efficiency vs. Output Power

NOV, 2013 http://www.fangtek.com.cn 8


ft2010

TYPICAL PERFORMANCE CHARACTERISTICS (Cont’d)

Efficiency vs Output Power Efficiency vs Output Power

100% 100%

90% 90%
80% 80%
70% 70%

Efficiency(%)
Efficiency(%)

60% 60%
50% 50%
40% 40%
30% 30%
VDD=3.6V, RL=8Ω+33uH VDD=3.6V,RL=4Ω+33uH
20% 20%
10% 10%
0% 0%
0 100 200 300 400 500 600 700 800 900 0 200 400 600 800 1000 1200 1400 1600
Output Power(mW) Output Power(mW)

Figure 10: Efficiency vs. Output Power Figure 11: Efficiency vs. Output Power

THD+N VS Output Power THD+N VS Output Power

100 100

10 10
VDD=5V, RL=8Ω+33uH VDD=3.6V, RL=8Ω+33uH
THD+N(%)

THD+N(%)

1 1

0.1 0.1

0.01 0.01
10 100 1000 10000 10 100 1000 10000
Output Power (mW) Output Power (mW)

Figure 12: THD+N vs. Output Power Figure 13: THD+N vs. Output Power

THD+N VS Output Power THD+N VS Output Power

100 100

10 10
VDD=5.0V,RL=4Ω+33uH VDD=3.6V,RL=4Ω+33uH
THD+N(%)
THD+N(%)

1 1

0.1 0.1

0.01 0.01
10 100 1000 10000 10 100 1000 10000
Output Power (mW) Output Power (mW)

Figure 14: THD+N vs. Output Power Figure 15: THD+N vs. Output Power

NOV, 2013 http://www.fangtek.com.cn 9


ft2010

TYPICAL PERFORMANCE CHARACTERISTICS (Cont’d)

THD+N vs Frequency THD+N vs Frequency

10.00 10.00

VDD=5V,1W RL=4Ω+33uH 1.00 VDD=3.6V,0.5W RL=4Ω+33uH


1.00
VDD=5V,1W RL=8Ω+33uH
VDD=3.6V,0.5W RL=8Ω+33uH

THD+N(%)
THD+N(%)

0.10 0.10

0.01 0.01
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

Figure 16: THD+N vs. Frequency Figure 17: THD+N vs. Frequency

PSRR vs. Frequency

0
-10

-20
VDD =4±0.2V, RL=8Ω+33uH, Input AC-Grounded
-30
PSRR(dB)

-40

-50

-60

-70

-80
10 100 1000 10000 100000
Frequency(Hz)

Figure 18: PSRR vs. Frequency Figure 19: Auto Recovering SCP Waveforms

Figure 20: Broadband Output Spectrum Figure 21: Audio-Band Output Spectrum

NOV, 2013 http://www.fangtek.com.cn 10


ft2010

APPLICATION INFORMATION
The ft2010 is a high efficiency, filterless, Class-D audio power amplifier with auto-recovering short-circuit
protection. The ft2010 operates from 2.7 to 5.5V supply. When powered with 5V supply voltage, the ft2010
is capable of delivering up to 3W into a 4Ω load or 1.8W into an 8Ω load, with 10% THD+N.
As a Class-D audio amplifier, the ft2010 features 90% high efficiency and 75dB PSRR at 217Hz which
make the device ideal for battery-supplied, high-quality audio applications. One of the key benefits of the
ft2010 over typical Class-D audio power amplifiers is it generates much less EMI emissions, thus greatly
simplifying the system design for portable applications. Also included are the circuitry to minimize turn-on
and turn-off transients (also known as pops and clicks) and auto-recovering over-current protection (OCP)
and short-circuit protection (SCP).
Furthermore, the ft2010 includes under-voltage lockout to ensure proper operation when the device is first
powered up; and thermal-overload protection to safeguard the die temperature during operation.

Fully Differential Amplifier


The ft2010 is configured in a fully differential topology. The fully differential topology ensures that the
amplifier outputs a differential voltage on the output that is equal to the differential input times the gain. The
common-mode feedback ensures that the common-mode voltage at the output is biased around VDD/2
regardless of the common-mode voltage at the input. Although the fully differential topology of the ft2010
can still be used with a single-ended input, it is highly recommended that the ft2010 be used with differential
inputs in a noisy environment, like a wireless handset, to ensure maximum noise rejection.

Filterless Design
Traditional Class-D amplifiers require an output filter. The filter adds cost and the size of the system board.
Furthermore, it degrades the performance of power efficiency and THD+N. The ft2010’s filterless
modulation scheme does not require an output filter. Because the switching frequency of the ft2010 is well
beyond the bandwidth of most speakers, voice coil movement due to the switching frequency is very small.
Use a speaker with a series inductance larger than 10µH. An 8Ω speaker typically exhibits a series
inductance in the range from 20µH to 100µH.
However, LC filter is required when the trace between the ft2010 and the speaker exceeds 100mm. Long
trace acts like tiny antenna and generates EMI emissions which may result in FCC and CE certification
failures.

Low EMI Design


Traditional Class-D amplifiers require the use of external LC filters or shielding to minimize EMI emissions.
The ft2010 employs a proprietary design of the amplifier output stage in conjunction with frequency jittering
technique to minimize EMI emissions while maintaining high efficiency.

How to Reduce EMI

The ft2010 does not require an LC output filter for short connections from the amplifier to the speaker.
However, additional EMI suppressions can be made by use of a ferrite bead in conjunction with a capacitor,
as shown in Figure 22. Choose a ferrite bead with low DC resistance (DCR) and high impedance (100Ω ~
330Ω) at high frequencies (>100MHz). The current flowing through the ferrite bead must be also taken into
consideration. The effectiveness of ferrites can be greatly aggravated at much lower than the rated current

NOV, 2013 http://www.fangtek.com.cn 11


ft2010

values. Choose a ferrite bead with a rated current value no less than 2A. The capacitor value varies based
on the ferrite bead chosen and the actual speaker lead length. Choose a capacitor less than 1nF based on
EMI performance.

Ferrite
Chip Bead
VOP
FB1 220Ω/2A C1
1nF
Ferrite
Chip Bead
VON
FB2 220Ω/2A C2
1nF

Figure 22: Ferrite Bead Filter to Reduce EMI

Shutdown Operation
In order to reduce power consumption while the device is not in use, the ft2010 includes shutdown circuitry
to de-bias all the internal circuitry when the SHDN pin is pulled low. During shutdown, the supply current of
the ft2010 is reduced less than 0.1µA, typically.

Under Voltage Lockout (UVLO)


The ft2010 incorporates circuitry designed to detect a low supply voltage. When the supply voltage drops
below 2.0V (typical), the ft2010 goes into shutdown mode. The device will emerge out of the shutdown
mode and resume its normal operation only when the supply voltage is restored to above 2.2V (typical) and
the SHDN pin pulled high.

Auto-Recovering Over-Current Protection (OCP) & Short-Circuit Protection (SCP)


Once an over-current or a short-circuit condition at the differential outputs, either to the power supply or to
ground or to each other, is detected, the ft2010 goes into shutdown mode. During shutdown, the ft2010
activates auto-recovering process whose aim is to return the device to normal operation once the fault
condition is removed. This process repeatedly examines if the fault condition persists, and returns the
device to normal operation immediately after the fault condition is removed. This feature helps protect the
device from large currents and maintain long-term reliability while removing the need for external system
interaction to resume normal operation.

Over-Temperature Shutdown (OTSD)


The thermal-overload protection on the ft2010 prevents the device from being damaged when the die
temperature exceeds 160°C. Once the die temperature exceeds the prescribed value, the device will be
forced into shutdown mode and the outputs are disabled. Note that this is not a latched fault. Instead, the
thermal fault will be cleared once the temperature of the die is lowered by 30°C. This large hysteresis will
prevent it from generating motor boating sound and allow the device resume normal operation without the
need for external system interaction.

NOV, 2013 http://www.fangtek.com.cn 12


ft2010

POP and Click Circuitry


The ft2010 includes circuitry to minimize turn-on and turn-off transients or “pops and clicks”. Here the
turn-on refers to either the application of the power supply or the device enabled by asserting SHDN high
and turn-off refers to either the removal of the power supply or the device shut down by pulling SHDN low.
When the device is first turned on, the amplifier is forced into mute mode initially. An internal current source
ramps up the internal reference voltage. The device will remain in the mute mode until the reference
voltage reaches to one half of the supply voltage, 1/2 VDD. As soon as the reference voltage reaches to a
value substantially close to its final value, the device will begin its normal operation. For the best power-off
pop performance, the amplifier should be placed in shutdown mode prior to removing the power supply
voltage.

Input Resistors (RI)

The input resistors (RI) set the gain of the amplifier according to Equation 1.

(1)

The matching of the input resistors is a crucial consideration for a fully differential amplifier. The balance of
the differential outputs with respect to the common-mode voltage strongly depends on the matching of the
input resistors. The CMRR, PSRR, and the cancellation of the even-order harmonics will be significantly
degraded if the mismatch of the input resist occurs. Therefore, it is recommended to use the resistors with
1% tolerance or better to keep the performance optimized. Note that the matching tolerance of the input
resistors is much more important than the absolute tolerance. Place the input resistors as close to the
ft2010 as possible to minimize the noise injected onto the high-impedance input nodes.

Decoupling Capacitor (CS)


The decoupling capacitor stabilizes the power supply voltage applied onto the ft2010, thus improving its
THD performance. It also prevents annoying voltage ringing with a long lead. A capacitor of 1µF or greater
with low equivalent-series-resistance (ESR) is required for decoupling and to be placed as close to the
ft2010 as possible to minimize the resistance and inductance of the traces between the device and the
capacitor. To filter out lower-frequency noise, a capacitor of 10µF or greater should be placed close to the
ft2010.

Input Capacitors (CI)


The input capacitors and input resistors determine the corner frequency of the highpass filter. The corner
frequency (fc) is calculated with the Equation 2.

(2)

The corner frequency directly influences the low frequency signals and consequently determines output
bass quality.

PCB Layout
As the output power increases, the interconnect resistance (PCB traces and wires) among the audio
amplifier, load, and power supply creates a voltage drop. The voltage loss on the traces between the ft2010

NOV, 2013 http://www.fangtek.com.cn 13


ft2010

and the load results in lower output power and lower efficiency. The higher trace resistance between the
supply and the ft2010 has the same effect as a poorly regulated supply, increasing the voltage ripples on
the supply line and also reducing the peak output power. The effect of the residual trace resistance will be
intensified as the output current increases. To maintain the highest output voltage swing for a maximum
output power, the PCB traces that connect the output pins to the load and the supply pins to the power
supply should be as wide and short as possible to minimize trace resistance.
The use of power and ground planes will give the best THD+N performance. While reducing trace
resistance, the use of power planes also creates parasite capacitors that help filter the power supply line.
The inductive nature of the speakers can also result in overshoots on one or both edges, clamped by the
parasitic diodes to ground and VDD in each case. From an EMI standpoint, this is the highly unfavorable
waveform that will radiate or conduct to other components on the system board and cause interference. It is
essential to keep the power and output traces short and well shielded if possible. Use of ground planes,
beads, and micro-strip layout techniques are all useful in preventing unwanted interference.

As the distance from the ft2010 to the speaker increases, the amount of EMI radiation will increase since
the output wires or traces acting as antenna become more efficient with their lengths. What is acceptable
EMI is highly application specific. Ferrite bears placed close to the ft2010 may be needed to reduce EMI
radiation. The value of the ferrite bears is also application specific.

NOV, 2013 http://www.fangtek.com.cn 14


ft2010

TYPICAL APPLICATION CIRCUITS

VDD

+ C3 Cs

47UF 1uF

1 8
SHDN SHDN VON

2 7 LS1
NC GND
C1 0.1uF R1 47K ft2010M
3 6
INP INP VDD
SPEAKER
C2 0.1uF R2 47K
4 5
INN INN VOP

C1=C2, R1=R2
Gain=300K/R1

Figure 23: Differential Audio Inputs

VDD

+ C3 Cs

47UF 1uF

1 8
SHDN SHDN VON

Single-Ended Input 2 7 LS1


NC GND
C1 0.1uF R1 47K ft2010M
INPUT 3 6
INP VDD
SPEAKER
C2 0.1uF R2 47K
4 5
INN VOP

C1=C2, R1=R2
Gain=300K/R1

Figure 24: Single-Ended Audio Input

NOV, 2013 http://www.fangtek.com.cn 15


ft2010

TYPICAL APPLICATION CIRCUITS (Cont’d)

VDD

SHDN + C3 Cs

47UF 1uF

Differential Input 1
C1 0.1uF R1 47K 1 8
SHDN VON
INP1
2 7 LS1
C2 0.1uF R2 47K NC GND
ft2010M
INN1
3 6
INP VDD
SPEAKER
Differential Input 2
4 5
C3 0.1uF R3 47K INN VOP
INP2

C4 0.1uF R4 47K C1=C2, R1=R2, C3=C4, R3=R4


INN2
Gain1=300K/R1, Gain2=300K/R3

Figure 25: Summing Two Differential Audio Inputs

VDD

+ C3 Cs

47UF 1uF

SHDN
L+R Inputs
1 8
SHDN VON
R1 56K
C1 0.1uF 2 7 LS1
L-IN NC GND
R2 56K ft2010M
C2 0.1uF 3 6
R-IN INP VDD
SPEAKER
R3 28K
C3 0.2uF 4 5
INN VOP

C3=C1+C2, R3=R1*R2/(R1+R2)
Gain-L=300K/R1, Gain-R=300K/R2

Figure 26: Summing Two Single-Ended Audio Inputs

NOV, 2013 http://www.fangtek.com.cn 16


ft2010

PHYSICAL DIMENSIONS

MSOP-8 PACKAGE OUTLINE DIMENSIONS


D:3.00± 0.10

E1:3.00± 0.10

E:4.90± 0.20

B B
e:0.65± 0.10
A3:0.35± 0.10
All dimensions are in millimeters

A2:0.85± 0.10 A:0.00-1.10 Dimensions in Millimeters


Symbol
Min. Max.
A — 1.10
A1 0 0.15
A1:0.00-0.15
A2 0.75 0.95
BASE METAL WITH PLATING A3 0.25 0.39
b 0.28 0.37
b1 0.27 0.33
c1:0.15± 0.01 c 0.15 0.20
c:0.175± 0.025 c1 0.14 0.16
D 2.90 3.10
θ1:12° ± 3° b1:0.30± 0.03 E 4.70 5.10
b:0.325± 0.045 E1 2.90 3.10
e 0.55 0.75
R1 L 0.40 0.80
L1 0.95REF.
R
L2 0.25BSC.
R 0.07 —
L2:0.25 R1 0.07 —
θ 0° 8°
L:0.60± 0.20 θ:0° -8°
θ1 9° 15°
L1:0.95
θ1:12° ± 3°

NOV, 2013 http://www.fangtek.com.cn 17


ft2010

IMPORTANT NOTICE

1. Disclaimer: The information in document is intended to help you evaluate this product. Fangtek, LTD.
makes no warranty, either expressed or implied, as to the product information herein listed, and reserves
the right to change or discontinue work on this product without notice.

2. Life support policy: Fangtek’s products are not authorized for use as critical components in life support
devices or systems without the express written approval of the president and general counsel of Fangtek
Inc. As used herein

Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to
the user.

A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.

3. Fangtek assumes no liability for incidental, consequential or special damages or injury that may result
from misapplications or improper use or operation of its products

4. Fangtek makes no warranty or representation that its products are subject to intellectual property license
from Fangtek or any third party, and Fangtek makes no warranty or representation of non-infringement with
respect to its products. Fangtek specifically excludes any liability to the customer or any third party arising
from or related to the products’ infringement of any third party’s intellectual property rights, including
patents, copyright, trademark or trade secret rights of any third party.

5. The information in this document is merely to indicate the characteristics and performance of Fangtek
products. Fangtek assumes no responsibility for any intellectual property claims or other problems that may
result from applications based on the document presented herein. Fangtek makes no warranty with respect
to its products, express or implied, including, but not limited to the warranties of merchantability, fitness for
a particular use and title.

6. Trademarks: The company and product names in this document may be the trademarks or registered
trademarks of their respective manufacturers. Fangtek is trademark of Fangtek, LTD.

CONTACT INFORMATION
Fangtek Electronics (Shanghai) Co., Ltd

Room 503 & 504, Lane 198, Zhangheng Road


Zhangjiang Hi-tech Park, Pudong District
Shanghai, China, 201204

Tel: +86-21-61631978
Fax: +86-21-61631981
Website: www.fangtek.com.cn

NOV, 2013 http://www.fangtek.com.cn 18

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