Drdo Elctronics Engineering Practice
Drdo Elctronics Engineering Practice
DRDO
Electronics
Engineering
(Electronics & Communication or Electronics
and Telecommunication Engineering)
TIER-II
PRACTICE BOOK Chief Editor
Mr. Anand Mahajan
Editor
Adv. Abhishek Singh
Compiled & Edited by
Engg. Anil Kumar Yadav
Computer Graphics by
Balkrishna, Charan Singh & Ashish Giri
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CONTENTS
PRACTICE SETS
PRACTICE SET-1 ........................................................................................................... 3-16
Pattern of Examination
(For the Post of 'STA-B')
Tier Mode/Type of Scope of Examination No. of Maximum Duration of
Examination Questions Marks Exam. (Mins.)
2
PRACTICE SET - 1
1. Doping of Boron in Silicon results in 11. Which one of the following noises arises in
(a) An intrinsic Si semiconductor electronic devices such as diodes and
(b) A p - type extrinsic semiconductor transistors because of the discrete nature
(c) An n-type extrinsic semiconductor nature of current flow?
(d) An intrinsic B semiconductor (a) Shot noise (b) Thermal noise
2. In a centre-tap full wave rectifier, Vm is the
(c) Gaussian noise (d) Random noise
peak voltage between the centre-tap and one of
the secondary. The maximum voltage across 12. Why TCP traffic is elastic traffic?
the reverse biased diode is (a) TCP sends traffic at a constant rate.
(a) Vm (b) 2 Vm (b) TCP adjusts traffic rate based on congestion.
(c) Vm/2 (d) 3 Vm (c) TCP maintains end-to-end flow control.
3. A land line tele-metering system is suitable for (d) None of the above
distance up to about 13. The number of address bits that are present in
(a) 1 Km only (b) 10 Km only Microprocessor 8085 are .
(c) 100 km only (d) any of the above (a) 64 (b) 32
4. BCD code of decimal number 15 is (c) 16 (d) 8
(a) 0000 1111 (b) 1111 14. Which of the following modulation scheme is
(c) 1000 0101 (d) 0001 0101 most bandwidth efficient?
5. One form of NMOS circuit logic that minimizes (a) AM (b) FM
power dissipation and maximizes device
density is called (c) PM (d) SSB-SC
(a) pass transistor logic 15. The solar cell is based on the principle of
(b) sequential logic circuit (a) Photo emissive effect
(c) NMOS SRAM cell (b) Photo conductive effect
(d) NMOS transmission gate (c) MOSFET
6. DC choppers belong to the category of, (d) Photo voltaic effect
(a) DC – DC converter 16. The atomic packing factor of a simple cubic
(b) AC – DC converter structure is
(c) Inverter
(a) 0.42 (b) 0.62
(d) AC – AC converter
(c) 0.52 (d) 0.72
7. The ac motor used in servo applications is a
(a) Single-phase induction motor 17. From the given expression, calculate the eigen
(b) 2–φ induction motor values of A.
(c) 3–φ induction motor 4 1
A=
(d) Synchronous motor. 1 4
8. A periodic signal is represented by (a) 4, 4 (b) 3, 5
(a) x(t) = x(t + T) (b) x(t) = x(t/T) (c) 6, 2 (d) –3, –5
(c) x(t) = x(tT) (d) x(t) = x(2T)
18. When microwave signals follow the curvature
9. A TDM system is to be designed to multiplex
of the earth, this is known as-
the following two signals
(a) Faraday effect
x1 = 5cos(2000πt) (b) Ducting
x2 = 2cos(2000πt)cos(3000πt) (c) Tropospheric scatter
The minimum sampling rate is (d) Ionospheric reflection
(a) 4 kHz (b) 5 kHz 19. Match List-I (Current) with List-II (Variation)
(c) 10 kHz (d) 6 kHz and select the correct answer using the code
10. A series RLC circuit has a resonance frequency given below the lists:
of 1 kHz and a quality factor Q = 100. If each List-I List-II
of R, L and C is doubled from its original A. Hole diffusion current 1. n.E
value, the new Q of the circuit B. Electron drift current 2. p.E
(a) 200 (b) 100 C. Hole drift current 3. –dp/dx
(c) 25 (d) 50 D. Electron diffusion current 4. dn/dx
Practice Set-1 3 YCT
Codes: 30. The trigonometric Fourier series of an even
A B C D function of time does not have
(a) 2 1 3 4 (a) the dc term
(b) 3 4 2 1 (b) cosine terms
(c) 2 4 3 1 (c) sine terms
(d) 3 1 2 4 (d) odd harmonic terms
20. For a diode in a reverse bias region, we have 31. Determine the equivalent resistance between
_____ capacitance, while in the forward bias terminal A and B in the following circuit -
region, we have ______capacitance.
(a) Transition, Diffusion
(b) Diffusion, Depletion
(c) Transition, Depletion
(d) Diffusion, Storage
21. The configuration of cascode amplifier is (a) 6.4Ω (b) 8.4Ω
(a) CE – CC (b) CE – CB (c) 10.5Ω (d) 9.6Ω
(c) CC – CB (d) CC – CC 32. What is product of form factor and peak
22. If 3 amplifiers are connected in cascade and fL factor?
of each is 120 Hz, then fL of cascaded amplifiers max.value max.value
(a) (b)
is: rms value avg.value
(a) 59.98 Hz (b) 253.43 Hz rms value avg.value
(c) 235.37 Hz (d) 254.33 Hz (c) (d)
avg.value rms value
23. The difference between the indicated value and
true value of a quantity is known as 33. P = 2i - 3j,Q = −3i + 4j - 2k,and R are in
(a) Relative error equilibrium, if R is
(b) Absolute error (a) −i − j + 2k (b) i − j + 2k
(c) Gross error
(c) i + j + 2k (d) i − j − 2k
(d) Dynamic error
24. The most common method used for damping in 34. A random process obeys Poisson's distribution.
measuring instruments is It is given that the mean of the process is 5.
(a) Air friction damping Then the variance of the process is
(b) Eddy current damping (a) 5 (b) 0.5
(c) Electromagnetic braking (c) 25 (d) 0
(d) Fluid friction damping 35. A random process is called ergodic process if-
25. The gray code of (1001)2 is: (a) Ensemble average is half of the time average.
(a) 1101 (b) 0110 (b) Time average is half of the ensemble average.
(c) 1100 (d) 1001 (c) Time average is equal to ensemble average.
26. Minimum number of gates required to (d) Time average is more than ensemble average.
implement the Boolean expression XY + X(X + 36. Identify the advantages of 2G from below
Z) + Y(X + Z) after simplification is (a) Calling was included
(a) 1 (b) 3 (b) The increase of overhead in signaling paved
(c) 2 (d) 4 way for capacity enhancement.
27. Power diode are used with (c) Higher bit rate voice coding enabled more
(a) heat sinks (b) reverse bias users getting the services simultaneously.
(c) forward bias (d) at room temperature (d) New services such as SMS were included
28. In thyristor, holding current is 37. In 8085 microprocessor CMA, RLC, RRC
(a) More than latching current instructions are examples of which addressing
(b) Less than latching current mode?
(c) Equal to latching current (a) Implicit addressing mode
(d) Very small (b) Direct addressing mode
29. Negative feedback in a closed-loop control (c) Indirect addressing mode
system does not (d) Immediate addressing mode
(a) reduce the overall gain 38. Which of the following computer memories is
(b) reduce bandwidth fastest?
(c) improve disturbance rejection (a) cache (b) primary
(d) reduce sensitivity to parameter variation (c) mass storage (d) backup memories
Practice Set-1 4 YCT
39. The eddy current loss is proportional to the
(a) frequency
(b) square of the frequency
(c) cube of the frequency
(d) square root of the frequency
40. The Electrical susceptibility and relative
permittivity are related as :
(a) χ = εr–1
(b) χ = εr + 1 RaRc R C
(a) L x = ,Rx = a b
(c) χ = εr ε0 Cb Cc
(d) χ =1 +ε0εr (b) Lx = RaRcCb, Rx = RxCbCc
41. The differential equation representing the heat R R R C
(c) L x = a c , R x = a c
equation is Cb Cb
(a) ∇ 2f = 0 (b) ut=kuxx R a Cb
(c) u tt = k∇ 2 u (d) None of the above (d) L x = R a R c C b , R x =
Cc
42. In a waveguide with perfectly conducting flat, 48. The circuit shown in figure is equivalent to :
wall, the angle of reflection is equal to the angle
of
(a) Diffraction
(b) Incidence
(c) Refraction
(d) Penetration
43. The phenomenon known as 'Early effect' in a (a)
bipolar transistor refers to a reduction of the
effective base-width caused by
(a) Electron-hole recombination at the base
(b) The reverse-biasing of the base-collector
(b)
junction
(c) The forward-biasing of the emitter-base
junction
(d) The early removal of stored base charge
during saturation to cut off switching (c)
44. A FET is better chopper than a BJT because it
has
(a) Lower off-set voltage
(b) Higher series ON resistance (d)
(c) Lower input current
(d) Higher input impedance
45. Which one of the following gain equations is
correct for a MOSFET common-source 49. Subtractors are designed using ______ ICs.
amplifier? (gm is mutual conductance, and RD (a) digital (b) analog
is load resistance at the drain) (c) subtractor (d) adder
(a) AV = gm/RD 50. If a zero is added in a forward path of a second
(b) AV = gmRD order system:
(c) AV = gm/(1 + RD) (a) rise time will decrease
(d) AV = RD/gm (b) rise time will increase
46. An amplifier power level is changed from 8 (c) bandwidth will decrease
watts to 16 watts, equivalent dB gains is (d) system will be less stable
(a) 2 dB (b) 3 dB 51. A system has a single pole at origin. Its impulse
(c) 6 dB (d) 5 dB response will be:
47. The figure shows 'Owen bridge' arranged to (a) constant
measure incremental inductance of the (b) ramp
unknown inductance Lx, Rx. At balance, what (c) decaying exponential
are the values of Lx and Rx ? (d) oscillatory
Solution
1. (b) Parameter Half Centre Bridge
There are 4 valence electrons in silicon while 3 valence wave wave
electrons in boron. When silicon is doped with boron, Average voltage Vm 2Vm 2Vm
the three electrons of boron bonded with the three
electrons of silicon and one valence electron of silicon π π π
remains free. To bond this one free electron of silicon RMS voltage Vm Vm Vm
the neighbouring silicon atom is taken thus a hole is 2 2 2
created there i.e. the deficiency of one electron is called
PIV Vm 2Vm Vm
as positive hole and this extra positive hole is called as
p-type extrinsic semiconductor. No. of diode 1 2 4
2. (b) 3. (a)
A land line tele-metering system in suitable for low
distance. Hence land line tele-metering system is
suitable for distance 1km only.
4. (d)
BCD code at decimal number is
1 5
00010101
Peak inverse voltage :- It is a voltage across the diode BCD code are in 4 bit
when it is reversed biased. 5. (a)
for +ve half cycle. One form of NMOS circuit logic that minimizes power
D1 → F.B. dissipation and maximizes device density is called Pass
D 2 → R.B. transistor logic (PTL). The basic element of pass
networks is MOS transistors with signals provided to
Apply KVL in loop-1
gate as variable and source as a 'pass variable' and it
V0 = Vm ...........(i) passes logic value from input to output when device is
on and goes to high impedance state in DFF stock.
6. (a)
A chopper is a high speed on/off semiconductor switch.
Chopper is a static device that converts fixed D.C input
voltage to a variable D.C output voltage directly.
7. (b)
Now, apply KVL in loop-2 2 − φ induction motor is used in servo application and
V2 = Vm + V0 .......... (ii) low power rating devices. The phase angle between two
Putting the value of V0 from equation (i) in equation starter winding is 900 and the angular phase difference
between each phase winding of a three-phase induction
(ii) V2 = Vm + Vm V2 = 2Vm motor is 120º.
R = i − j + 2k
34. (a)
Minimum two gate required
Given that -
27. (a) mean value = 5
A power diode is a type of diode that is commonly used
Variance = (mean)
in power electronics circuits, due to high ratings. To
control the temperature rise heat sinks are used. variance = 5
1 2 P−Z
94. (c)
(−1 − 3 − 0) − (0)
For TV Broadcasting we use frequency modulation σ= = −4 / 3
3−0
(FM) for Audio signal and Amplitude modulation (AM)
for video transmission. σ = –1.33
Practice Set-1 16 YCT
PRACTICE SET - 2
1. A semiconductor material is doped with donor 10. A series RLC circuit resonates at 1000 kHz. At
type impurities with 1015 atoms/cm3. If the frequency of 995 kHz, the circuit impedance is
intrinsic carrier concentration is 1010 cm–3, then (a) Resistive (b) minimum
the concentration of holes in the doped (c) Inductive (d) capacitive
semiconductors in equilibrium (in cm–3) will be: 11. White noise is characterized by-
(a) 108 (b) 105 (a) Gaussian probability density function
10
(c) 10 (d) 1012
η
2. The efficiency of half-bridge rectifier under (b) Power spectral density δ (f )
best condition is: 2
(a) 25.5% (b) 35% (c) Autocorrelation function depends
(c) 40.6% (d) 81.2% η
(d) Autocorrelation δ ( τ)
3. The quantization noise depends on 2
(a) Sampling rate 12. Telephone traffic is specified in terms of
(b) Number of quantization levels (a) Average waiting time (b) Peak waiting time
(c) Signal power (c) Grade of service (d) Erlangs
(d) None of these 13. A register of microprocessor which keeps track
4. What is (82)10 in base 5? of the execution of a program and which
(a) (310)5 (b) (311)5 contains the memory address of the next
(c) (312)5 (d) (313)5 instruction to be executed is called
5. When there is no clock signal applied to CMOS (a) Index address register
logic circuits, they are referred to as (b) Memory address register
(a) complex CMOS logic circuits (c) Program counter
(b) static CMOS logic circuits (d) Instruction register
(c) NMOS transmission gates 14. Identify the modulation schemes for the shown
(d) random PMOS logic circuits signal constellation diagram
6. Which of the following is control element in
Silicon Controlled Resistor (SCR)?
(a) Gate
(b) Anode
(c) Cathode
(d) Source (a) ASK (b) MSK
7. The most commonly used input signal (s) in (c) FSK (d) QAM
control system is/are
15. Which of the following is not classified as a
(a) Step function
photoconductive device?
(b) Ramp or velocity function (a) PIN photo diode
(c) Accelerating function (b) A photo transistor
(d) All of the above (c) A light dependent register
8. If a signal f(t) has energy E, the energy of the (d) A photo voltaic cell
signal f(2t) is equal to 16. The co-ordination number of a simple cubic
E structure is
(a) E (b)
2 (a) 2 (b) 4
(c) 2E (d) 4E (c) 6 (d) 8
9. The quantization of a PCM system depends on 17. The order of a matrix is defined as
(a) Number of quantization levels (a) No. of rows-No. of columns
(b) Step-size (b) No. of rows× No. of columns
(c) Both step-size and number of quantization levels (c) No. of rows + No. of columns
(d) Sampling rate (d) No. of rows/No. of columns
Practice Set-2 17 YCT
18. What is the frequency range of VHF 25. Simplify the following Boolean expression
electromagnetic waves? using the De Morgan’s theorem:
(a) 30-300 kHz
F(A,B,C,D,E,F) = ( A + B ) CD + (E + F)
(b) 30-3000 kHz
(c) 30-300 MHz (a) ( A + B + C) ( D + E + F)
(d) 30-3000 MHz
19. Match List-I (Type of Conductor) with List-II (b) AB + CD + EF
(Position of Fermi Level) and select the correct (c) ( AB + C + D) E F
answer using the codes given below the lists:
List-I List-II (d) ABC + DEF
A. n-type semiconductor 1. Middle of band 26. In Boolean Algebra, A+A+A+......+A is the
gap same as :
B. p-type semiconductor 2. Above (a) Zero (b) A
conduction band (c) nA (d) An
C. Intrinsic 3. Near but below 27. SCR can be used in
semiconductor conduction band (a) oscillator
D. Degenerate n-type 4. Near but above (b) regulator
semiconductor valence band (c) amplifier
Codes: (d) Light dimming
A B C D 28. Which of the following devices does not have
(a) 1 2 3 4 negative resistance characteristics
(b) 3 4 1 2 (a) UJT (b) Tunnel diode
(c) 1 4 3 2 (c) SCR (d) FET
(d) 3 2 1 4 29. Feedback control system are basically
20. The voltage required to forward bias a P-N (a) Low pass filters
junction-based on silicon is : (b) High pass filters
(a) 0.15V (c) Band pass filters
(b) 0.32V (d) Band stop filters
(c) 0.55V 30. Any waveform can be expressed in Fourier
(d) 0.70V series if
21. The voltage gain of amplifier stage is lowest in (a) Sampling condition are satisfied
(a) CB (b) Dirichlet's conditions are satisfied
(b) CE (c) Maxwell's conditions are satisfied
(c) CC (d) None of the above condition is required to be
(d) Same in all configurations satisfied
31. Which one of the following represents a single
22. The hybrid-pi model is used for:
element such as a voltage source or a resistor?
(a) analysis of BJT for feedback (a) Branch (b) Node
(b) analysis of BJT for large signal (c) Loop (d) Circuit
(c) analysis of BJT at low frequency 32. Find the Resistance value showing by graph.
(d) analysis of BJT at high frequency
23. Subtracting 437±4 from 462±4 would yield a
result with percentage error of
(a) ±4%
(b) ±16%
(c) ±8%
(d) ±32%
24. Swamping resistor is connected with PMMC
meter in order to: (a) 0.5Ω
(a) Obtain large deflecting torque
(b) 2Ω
(b) Reduce the size of the meter
(c) 0.25Ω
(c) Minimize the effect of stray magnetic fields
(d) 4Ω
(d) Minimize the effect of temperature variation
Practice Set-2 18 YCT
33. Poisson's equation for inhomogeneous medium 42. In microwave system, waveguides have the
is : advantages of
(a) ∇2V = –ρ (b) ∇.(∇V) = –ρ (a) High power-handling capability and low loss
(c) ∇2(V) = –ρ (d) None of these (b) Thin dielectric substrate
34. 13 dBm is equivalent to (c) Low power handling and adequate stability
(d) Positive phase shift
(a) 2 mW (b) 20 W
43.
(c) 20 mW (d) 2 MW
35. The auto-correlation function of an ergodic
random process is given by :
T
1
x ( t ) x ( t − τ ) dt
2T −∫T
(a) lim t →∞ =
T
2 What does the above figure represents
x ( t ) x ( t − τ ) dt
T ∫0
(b) lim t →∞ = (a) Output configuration of common emitter
T
(b) Input configuration of common base
1
x ( t ) x ( t − τ ) dt
2T ∫0
(c) lim t →∞ = (c) Output configuration of common base
(d) Input configuration of common emitter
T
2 44. MOSFET can be used as
x ( t ) x ( t − τ ) dt
T −∫T
(d) lim t →∞ =
(a) Current controlled capacitor
(b) Voltage controlled capacitor
36. A computer modem's rating of 56 K refers to
its− (c) Current controlled inductor
(a) Transmission capacity (d) Voltage controlled inductor
(b) Transmission speed 45. Consider the following statement :
(c) Memory size In JFET amplifiers, high frequency response
can be improved by using peaking circuits
(d) Modem size
containing inductors
37. The ______ holds intermediate results obtained
1. in series with drain resistance RD.
during program processing.
2. in series with the coupling capacitance
(a) Register (b) ALU
3. as a feedback element between drain and
(c) Motherboard (d) Main memory
gate?
38. If the memory chip size is 256 × 1 bits, then the
Which of the statement given above are
number of chips required to make up 1 KB
correct?
(1024) bytes of memory is
(a) 1 and 2
(a) 32 (b) 24 (c) 12 (d) 8
(b) 2 and 3
39. In open delta, configuration capacity of
transformer I reduced to: (c) 1 and 3
(a) 57.7 % (b) 50% (d) 1, 2 and 3
(c) 65% (d) 86.6% 46. A particular amplifier circuit used for
frequency doubling is
40. The relation between three vectors E, D, p and
(a) Push-push
is
(b) Push-pull
(a) D =ε0 E + P (b) D =ε0 ( E + P ) (c) Pull-push
E (d) Pull-pull
(c) D=ε0 P + E (d) D = +P
ε0 47. Match List-I (Bridge) with List-II (Quantity)
41. If and select the correct answer using the code
given below the lists:
x y
u = sin -1 + tan -1 List-I List-II
y x
∂ ∂
∂ ∂
(b)
(a) 46 (b) 38
(c) 12 (d) 10
71. When a material is placed within a magnetic (c)
field, the magnetic forces of the material’s
electrons will be affected. This effect is known
as the ________of magnetic induction
(a) Stokes theorem
(b) Newton’s law
(d)
(c) Ferro electro-magnetic theorem
(d) Faraday’s law
72. Which one of the following is an indirect way of
generating FM? 78. Imax= 32pA, C= 6 µF, SR in µV/Sec?
(a) Reactance FET modulator (a) 5.33 (b) 5.33×103
3
(b) Varactor diode modulator (c) 1.9×10 (d) 1.9×109
(c) Armstrong modulator 79. Which of the following is NOT active
(d) Reactance tube modulator transducer?
73. In a typical frequency multiplier application (a) Thermoelectric transducer
using a PLL, a decade counter was inserted (b) Piezoelectric transducer
between the VCO output and the relevant (c) Hall-effect transducer
phase comparator input. If the input frequency (d) Electromagnetic transducer
is 10 kHz, the VCO output frequency would be 80. The state diagram depicts the truth table of
(a) 10 kHz (b) 100 kHz
(c) 1 kHz (d) 11 kHz
74. Which of the following antenna uses a number
a varying length parallel elements?
(a) Helical antenna
(b) Pyramidal Horn (a) Johnson counter (b) Up counter
(c) Corner reflection antenna (c) Ring counter (d) Ripple counter
(d) Yagi-Uda antenna 81. For Emitter-Coupled Logic (ECL), the
75. An I/O processor controls the flow of switching speed is very high because
information between (a) Negative logic is used
(a) Cache memory and I/O devices (b) The transistors are not saturated when they
(b) Main memory and I/O devices are conducting
(c) Two I/O devices (c) Multi-emitter transistors are used
(d) Cache and main memories (d) Of low fan-out
Solution
1. (b) 6. (a)
Donor impurity (ND) = 1015atoms/cm3 Gate is a control element in SCR.
Intrinsic concentration (ni) = 1010cm–3 The gate is used to trigger the equipment into
NA = ? operation by the application of low voltage.
we know the mass action Law 7. (a)
ND×NA = (ni)2 The most commonly used input signal in control system
∴ 1015×NA = (1010)2 is step function.
1020 In step function, output always follows input.
∴ NA = = 105 cm −3
1015 Unit step signal:-
2. (c)
Parameters Half-wave Full-wave
Average Vm 2Vm
Voltage π π
RMS Voltage Vm Vm
8. (b)
2 2 ∞
E=∫ [ f (t)]
2
Voltage ripple 1.21 0.482 dt
−∞
factor ∞
E′ = ∫ [f (2t)]
2
dt
Rectifier 40.6% 81.06% −∞
efficiency ∞ dp dp
=∫ [f (p)]
2
∵ 2t = p;dt =
3. (b) −∞ 2 2
Quantization noise results when a continuous random E
variable is converted to a discrete one or when a E′ =
2
discrete random variable is converted to one with fewer Note : If signal x(t) has Energy E.
level. Then,
The quantization noise depends on number of E
quantization levels. x(at) =
|a|
4. (c)
(82)10 = (?)5 x(t – t0) = E
x(–t) = E
A x(t) = A2E
A+ x(t) = ∞
9. (c)
The quantization of a PCM system depends on both
(82)10 = (312)5 step-size and number of quantization levels.
5. (b) Quantization noise in PCM-
Static CMOS logic circuits has no clock signal and • In PCM the quantization noise in terms of power is
complementary NMOS pull-down and PMOS pull-up given by the relation.
networks to implement logic gates or logic functions in
integrated circuits. However dynamic gates use a locked ∆2
Quantization noise power =
PMOS pull-up. 12
Practice Set-2 23 YCT
Here, Where elements aij belongs to ith row and jth column.
∆ is the step size. 18. (c)
V − ( −Vmax ) Vp − p Name Frequency Range
Step size (∆) = max = n Very low frequency (VLF) 0.003 MHz - 0.03MHz
L 2 Low frequency (LF) 0.03 MHz - 0.3 MHz
L is No. of quantization levels. Medium frequency (MF) 0.3 MHz - 3 MHz
10. (d) High frequency (HF) 3 MHz - 30 MHz
Given, Very high frequency (VHF) 30 MHz - 300 MHz
Ultra-high frequency (UHF) 300 MHz - 3000 MHz
f0 = 1000 kHz
Super- high frequency (SHF) 3000 MHz - 30, 000MHz
frequency (f) = 995 kHz Extra-high frequency (EHF) 30,000 MHz-3, 00, 000 MHz
19. (b)
1 V1 V2 V3
V0 = − ∫ + + dt
C R1 R 2 R 3 So, y ( n ) = {1, − 3,7, −7,6}
↑
R 1 = R2 = R3 = R 70. (d)
1
V0 = − ∫ ( V1 + V2 + V3 ) dt
RC
66. (d)
Lissajous pattern can be used to determine phase shift.
A lissajous figure is displayed on the screen when
sinusoidal signals are applied to both horizontal and L = 6 + 8 + 10 − 2 × 5 − 2 × 4 + 2 × 2
vertical deflection plates of CRO. It is used to measure L eq = 24 − 10 − 8 + 4
frequency and φ difference.
L eq = 10H
67. (c)
71. (d)
• Master slave flip-flop constructed by 2 JK flip-flops
Faraday’s law of electromagnetic induction is the basic
first FF called master is driven by positive clock pulse
law of electro magnetism predicting how a magnetic
and second FF called slave is driven by negative clock
field will interact with an electric circuit to produce an
pulse. electromotive force (emf), a phenomenon known as
Practice Set-2 28 YCT
electromagnetic induction. According to faraday's law a 79. (c)
current will be induced in a conductor which is exposed Active transducers- Those transducers, which uses
to a changing magnetic field. their own developed voltage or current for giving the
72. (c) output signal. Ex. Thermoelectric transducers
Armstrong modulator is an indirect way of generating piezoelectric transducer, electromagnetic transducer.
FM signal. Passive transducers- Passive transducers are those
Reactance tube/varactor diode method is direct method transducers which uses an external power supply for
to generate FM. In this case, output frequency of VCO converting the non-electrical quantity to an electrical
is directly controlled by instantaneous value of quantity.
baseband. Ex. Potentiometer, LVDT, hall effect transducer.
73. (b) So, hall effect transducer is not active transducer.
fi = 10 kHz. 80. (c)
Output of PLL = 10 fi (for decade counter)
= 10 × 10 kHz
= 100 kHz
74. (d)
The Yagi-Uda Antenna typically consists of a number
of parallel thin rod elements each approximately a half
Ring counters-
wave in length.
It is simplest shift register counter.
75. (b)
It is also called end carry counter.’’
The Input/output processor controls the flow of
In this only one bit is high and it made to circulate
information between main memory and input/output
around the register as long as clock pulses are applied
devices.
81. (b) Emitter Coupled Logic (ECL):-
The I/O processor is similar to the CPU except that it
handles only the details of I/O processing. The I/O • ECL, the switching speed is very high because
processor can fetch and execute its own instructions. transistors are not saturated when they are conducting.
76. (b) • It is the fasted logic among the all hence called "
As per given data - current mode logic".
α = 10–3/oC • It provides wired 'OR' logic
at R0 = 1.0Ω, RT = 1.1Ω • It used negative power supply to avoid noise and
T1 = 00C, T2 = ? glitches.
We know that • Propagation delay in ECL circuit is 1 n sec.
RT = R0 [(1 + α (T2 – T1)] •Noise margin in ECL logic circuit is 0.3 Volt.
Then 1.1 = 1 [1 + 10–3 (T2– 0)] 82. (a)
1.1 = 1 + 10–3T2 Poynting Vector P = E × H
10–3T2 = 0.1 V A Volt.Amp
Units: × =
T2 = 100º C m m m2
77. (a) Watt
If the resonant frequency is parallel with L and C (both =
m2
are parallel) then it shows coupled lossy cavity.
83. (c)
78. (a) Product demodulator is used for the detection of AM
Given that, I max = 32pA DSB - SC signal.
C = 6µF 84. (b)
dV If probability of occurrence of message is p then its
I max = C information content I will be
dt
1
I max dV
= ( I ) = log 2
P
C dt
1
dV 32 × 10−12 given P =
= = 5.33 ×10−6 16
dt 6 × 10−6
1
dV I = log 2
S.R. = = 5.33 µV sec 1/16
dt
I = log216 = 4 bits
Practice Set-2 29 YCT
85. (b) For global communication minimum number. of n
satellite used is 3. Each satellite provides around 120º Critical angle sinθc = 2
coverage area. n1
86. (d) 1.6
θc = sin −1
There are 6 bit are used as conditional flags in flag 1.4
register of 8086. The flag register are special purpose
8
register is 1. sign flags(S) 2. Zero flag (Z) 3. Auxiliary = sin −1
carry flag (AC) 4. Parity flag (P)5. Carry flag (CY) 6. 7
Over flow (O). θc = 61.05º θc = θi = 70
87. (c) θi > θr
A 3 port circulator is an asymmetrical y-type junction
of three identical waveguides with an axially
magnetized ferrite port placed at the centre.
It provide the necessary non-reciprocal matched
property.
88. (c)
A cavity is a band pass filter because it is passes either
Total internal reflection takes place
or rejects desired RF signal within a range of
reflection angle = incidence angle
frequencies. Cavity Band pass filter offers excellent 60
dB out of Band rejection. A cavity filter has two θr = θi = 70º
functions: 94. (c)
• To pass the desired frequency The audio frequency range is 20Hz to 20kHz.
• To reject as much of undesired frequencies as 95. (a)
passable. Soft Errors are caused by radiations, when particles
89. (b) clash with a semiconductor, charged particles are
The voltage resolution for n-stage ladder network R generated inside the semiconductor. These charged
particles disturb the data contained in the memory cells
V
= REF to generate a soft error. Unlike hard error that damages
2n the circuit completely, soft error causes no destructive
90. (a) event to the semiconductor.
15's complement of ABAB - 96. (c)
15 15 15 15 Average power consumed-
A = 10, B = 11 − A B A B 2
Vrms
5 4 5 4 P=
R
5 4 5 4
=
( 20 )2 =
400
= 120W
16's complement = + 1 3.33 3.33
5 4 5 5 97. (b)
91. (a) FORTRAN is a high level programming language.
Companding is used to protect small signals in PCM for FORTRAN, as derived from formula translating system,
quantizing distortion. Companding is used in digital is a general purpose imperative programming language.
telephony system. It is used for numeric and scientific computing.
92. (d) Quantization is the process through which a 98. (d)
range of continuous analog values are quantized or A/D converter system, a counter/timer block is used for
rounded of to a single value. Quantization error occurs frequency measurement.
when an analog signal is converted into its digital form. 99. (c)
It occurs in pulse code modulation. The output voltage waveform of a three phase square
The quantization noise depends on the number of wave inverter contains only odd harmonics.
quantization level and not on the number of samples 100. (a)
produced per second. Root locus starts from open loop poles and terminated
93. (c) Given - at open loop zeros when number of poles and zeros are
n1 = 1.6 equal. When Z > P root locus start from infinity and
n2 = 1.4 ends at zero.
When P > Z, root locus start from poles and ends at
Angle of incidence ( θi ) = 70º
infinite.
∂ ∂
∂ ∂
(c) inductance (d) resistance
33. The operator 'del; (∇) is a u u
then x +y will be
(a) Vector space function x y
(b) Vector time function (a) sin 2u (b) cos 2u
(c) Scalar space function (c) tan u (d) sin u
(d) Scalar time function 42. In a waveguide, attenuation near the cut-off
34. A system has a receiver noise resistance of 50Ω. frequency is
It is connected to an antenna with an input (a) low (b) high
(c) very high (d) zero
resistance of 50Ω. The noise figure of the
43. The Ebers-Moll model is applicable to
system is
(a) Bipolar Junction Transistor
(a) 1 (b) 2
(b) NMOS Transistor
(c) 50 (d) 101
(c) Unipolar Junction Transistor
35. Two random variable X and Y are totally
(d) Junction FET
uncorrelated if ρ XY :
44. The effective channel length of a MOSFET in
(a) 1.0 (b) ∞ saturation decreases with increases in
(c) Negative (d) 0 (a) gate voltage (b) drain voltage
36. In automatic exchange, switching is done by (c) source voltage (d) body voltage
(a) electromechanical or electronic switch gear 45. A junction field effect transistor can operate in
with the help of operator. (a) Depletion mode only
(b) electromechanical and electronic switch gear. (b) Enhancement mode only
(c) electromechanical or electronic switch gear (c) Depletion and Enhancement modes
without the help of the operator. (d) Neither depletion nor Enhancement modes
(d) none of the these 46. Match List-I (Type of Feedback) with List-II
37. In 8085, if the clock frequency is 5 MHz, the (Effect on Rin and Rout) and select the correct
time required to execute an instruction of 18 T- answer using the code given below the lists
states is List-I List-II
(a) 3.0µs (b) 3.6µs (A) Voltage series 1. Rin increase and
Rout decreases
(c) 4.0µs (d) 6.0µs
(B) Voltage Shunt 2. Rin and Rout
38. Processing speed of computer is measured in- decrease
(a) MIPS (Million Instruction Per Second) (C) Current Series 3. Rin and Rout
(b) MHz of clock increase
(c) Both (A) and (B) (D) Current shunt 4. Rin decreases and
(d) None of these Rout increases.
Practice Set-3 33 YCT
Codes: 54. An electrostatic force between two point
A B C D charges increase when they are:
(a) 1 4 3 2 (a) More apart and dielectric constant of the
(b) 3 2 1 4 medium between them decreases
(c) 3 4 1 2 (b) Less apart and dielectric constant of the
(d) 1 2 3 4 medium between them decreases
(c) More apart and dielectric constant of the
47. The bridge best suited for measurement of
medium between them increases
mutual inductance is:
(d) Less apart and dielectric constant of the
(a) De Sauty bridge
medium between them increases
(b) Wien bridge
55. A carrier wave is phase modulated with
(c) Heaviside Campbell bridge frequency deviation of 20 kHz by a single tone
(d) Schering bridge frequency of 2 kHz. If the single tone frequency
48. Which one of the following gate is also known is increased to 2 kHz, assuming that phase
as equivalence gate? deviation remains unchanged, bandwidth of the
(a) NOR PM signal is
(b) AND (a) 20 kHz (b) 32 kHz
(c) Ex-OR (c) 22 kHz (d) 44 kHz
(d) Ex-NOR 56. A telegraph sounder is basically a
49. A full-adder can be implemented with half- (a) Mechanical devices
adders and OR gates. A 4-bit parallel full (b) Electrostatic devices
adder without any initial carry requires (c) Electromagnetic devices
(a) 8 half-adders. 4-OR gates (d) Electronic devices
(b) Three bit parity checker 57. In 8085 which of following has highest
(c) 7 half-adders, 4-OR gates priority?
(d) 7 half-adders, 3-OR gates (a) INTR (b) RST 7.5
50. A dominant pole is determined as : (c) RST 6.5 (d) RST 5.5
(a) the highest frequency pole among all poles 58. The contents of EPROM can be erased by
(b) the lowest frequency pole at least two octaves exposing it to
lower than other poles (a) Ultraviolet rays
(c) the lowest frequency pole among all poles (b) Infrared rays
(d) the highest frequency pole at least two (c) Burst of microwaves
octaves higher than other poles (d) Intense heat radiations
51. Consider a system with transfer function
59. In dc machine, fractional pitch winding is
9 employed to
2
; The system has ____, ____, and
s + 4s + 9 (a) Increase generated voltage
____. (b) Reduce sparking
(a) ζ = 0.667, ωn = 3, underdamped (c) Save copper
(b) ζ = 0.222, ωn = 9, undamped (d) Both (b) and (c)
(c) ζ = 0.667, ωn = 9, undamped 60. If the drift velocity of holes under a field
(d) ζ = 0.222, ωn = 3, underdamped gradient of 200 V/m is 100 m/s, their mobility
52. According to the final value theorem in SI units is
(a) 0.5 (b) 0.05
(a) F(0− ) = limit sF(s)
s→∞ (c) 50 (d) 500
(b) F(0+ ) = limit sF(s) 61. Fourier transform of u(t)______
s →∞
Solution
1. (b) Diode equation Vi − Vz 9 − 6 3
∵ Is = = = = 60mA
VD q Rs 50 50
I D = Is e ηKT − 1 ……………(i)
∵ I L(min) = Is − I z(max) = 60 − 50 = 10mA.
Where, And, I z(max) = Is − I z = 60 − 5 = 55mA
I D − Total diode current
Is − Reverse saturation current 3. (d)
f1 = f0, f2 = f0, f3 = f0 & f4 = 4f0
VD- Applied voltage across the diode
η − ideality factor Commutator speed = 2⋅fmax
VT- Thermal voltage = 2 × 4f0
From equation (i) = 8 f0
VD 4. (d)
I D = Is e ηVT − 1 ( 541)10 in binary ( 001000011101)2
1's complements of 001000011101 is -
KT
∴ VT = 1 1 0 1 1 1 1 0 0 0 1 0
q + 1
K = 1.38 × 10 −23 J / K 1 1 0 1 1 1 1 0 0 0 1 1 2's complement
q = 1.6×10–19C (110111100011)2 = ( DE3)H
T = Room temperature
Thermal voltage is directly proportional to temperature. 5. (c)
The advantages of FIR filters over IIR filters are -
VT ∝ Tempreture FIR IIR
KT • Linear phase • IIR filters are non-linear
Now→ VT = characteristic phase characteristic.
q
Where, • Linear phase property • IIR filters can become
K → Boltzmann's constant implies that the phase more difficult to
q → charge (e − ) is a linear function of implement and distort
the frequency adjustments (because of
T→ Room Temperature
• FIR filters are always feedback).
∵ Now
stable i.e for a finite Which can alter the poles
q 1
= input, the output is and zeros and make the
KT V always stable. filters unstable.
q 6. (c)
= V −1
KT Given value,
2. (c) Given, Source voltage, Vs = 240
Iz = 5mA, V0 = Vz = 6V Iknee = 5mA. Duty cycle = 0.4
Voltage drop = 4V
Rs = 50Ω, Vi = 9V
∴ Max power dissipation 300mW. Average output voltage = ( Vs − 4 ) × 0.4
Pz( max ) 300 = ( 240 − 4 ) × 0.4
∴ I z(max) = = = 50mA
VZ 6 = 94.4V
Practice Set-3 36 YCT
7. (b) 18. (a)
First order of instrument is characterized by static A parametric amplifier must be cooled to improved
sensitivity and time constant. noise performance.
8. (b) 19. (b)
• Continuity equation: based on rate of change of
∫ ( step function ) dt → ramp function. minority carrier density with respect to time...
∫ ( Ramp function ) dt → Parabolic function. for e − →
dn 1 dJ n
= − Rn + Gn
Hence, ∫ ∫ ( step function ) dt → Parabolic function. dt q dx
9. (d) dp 1 dJ p
for Hole → =− − RP + GP
Given, Number of total events 2n = 16 dt q dx
2n = 24 Where-
Number of bits n=4 Gn/GP = e/hole generation rate
Rn/RP = e/hole- recombination rate
10. (a)
Jn/JP = e/hole density.
Quality factor of series R-L-C circuit
• Poisson's equation:-
ωL
Q= 0 dε p(x)
R general form : =
dx kε 0
1 L Where-
Q=
R C ε = electric field.
1 ρ (x) = space charge density (Charge/cm3)
Q∝ K = dielectric constant
R
Hence, the quality factor of series R-L-C circuit will ε 0 = permittivity of free space (8.854 ×10–
14
increases if R decreases. F/cm)
2
11. (d) d V P
=−
The noise at the input to an ideal frequency detector is dx 2
ε
white. The power spectral density of the noise at the Poisson's equation related charge density with electric
output is Gaussian. field.
12. (a) • Diffusion equation-
Code access method to used by various radio dn
communication technologies. CDMA is an example of for e– Jn(diff) = q Dn.
multiple access. It is not used in satellite dx
communication because of wastage of power. dp
for hole JP (diff) = – q Dp
13. (c) dx
A logical operation can be used to set the carry flag in a total diffusion = Jn(diff) + Jp(diff)
computer which perform basic logical operations such
dn dn
as AND, OR, XOR etc and works on a bitwise level. J diff = q D n − q Dp
14. (d) dx dx
QPSK (Quadrature phase shift keying) modulation • Einstein equation:
system is normally used with the digital data. D n D p KT T(k)
= = = VT = Volt
15. (c) µn µp q 11600
∵ 1 Ah = 3600 coulombs diffusion equation relates flow with rate of change of
∴ 2 Ah = 3600 × 2 concentration in space.
= 7200 coulombs 20. (b)
16. (c) A crystal diode is used as a rectifier to convert the AC into
X-ray diffraction pattern to determine a crystalline DC. As it conducts only in one direction and blocks the
material current flow in the reverse direction as similar to the
A crystal structure is SC, BCC, FCC, but for this we normal diode it can be used to design the half wave, full
must know which crystal planes are the diffracting for wave and bridge rectifier circuits.
each type of crystal structure. 21. (a)
17. (c) Av = 100, Vi = 65 mV, V0 = ?
since tr(A) = sum of diagonal elements of a square V
matrix Av = 0
Vi
=1+5+9
= 15 ⇒ V0 = 100×65×10–3 = 6.5 V
Solution
1. (b) The concentration of minority carriers in an X1 = Y1
extrinsic semiconductor under equilibrium is inversely X 2 = Y 1⊕ Y 2
proportional to the doping concentration. X 3 = Y 1⊕ Y 2 ⊕ Y 3
According to mass action law- Let Y1 = 1, Y2 = 1, Y3 = 1, then
n.p. = n i2 X1 = 1, X2 = 0, X3 = 0
n = concentration of electrons So, the above conversion is binary to gray code.
p = concentration of holes 5. (c)
ni = intrinsic carriers The VLSI/ULSI (Very Large Scale Integration/Ultra
In n - type semiconductor Large Scale Integration) technique is used fabricate
minority Holes concentration CMOS.
p = n i2 /ND 6. (b) A TRIAC is similar to two back to back (anti-
parallel) connected SCRS. A TRIAC is bipolar and
ND = concentration of donor impurity bilateral power electronic device.
2. (b) 7. (c) From block diagram reduction, G1 and G2 are in
parallel, So G = G1 + G2
C G1 + G 2
=
R 1 + ( G1 + G 2 )( H 1 )
Operation –
C G1 + G 2
If D1 = forward bias =
R 1 + G1H1 + G 2 H1
D2 = Reverse bias
Then D1 = diode will be allow the current flow. 1 n=0
If D1 = Reverse bias 8. (b) δ(n) =
0 other wise
D2 = Forward bias
Then, D2 diode will be allow the current flow. 1 n = 0,1, 2,3
u(n) =
Therefore, current I contain all harmonics of frequency. 0 n<0
3. (b) 1 n = 1, 2,3, 4
Signal to noise ratio is highest in PPM. u(n – 1) =
0 n <1
4. (b)
δ (n) = u (n) – u (n – 1)
9. (c) Given, Bit rate (Rb) = 34Mbps
Rb (R )
The baud rate of QPSK = = b
log 2 m 2
34
=
2
= 17Mbps
a 1 a 1 1
= , = , a× =1 v = 1.39 ×106m/s
2×a 2 2× a 2 a
Practice Set-4 51 YCT
20. (d) Basic gates - AND, OR, NOT
LED (Light emitting diode)- Universal gates -NAND, NOR
this diode emit light when connection is in forward bias Special purpose gates - Ex-OR and Ex-NOR
• LCD (Liquid crystal display)-LCD panels use 27. (b)
reflective technology (light reflector) An insulated-gate bipolar transistor (IGBT) is a 3-
• Optocoupler - optocouplers, also called opto- terminal power semiconductor device primarily used as
isolated, are semiconductor devices that isolated an electronic switch.
unwanted signal by optically couple circuit. 28. (c)
• Photo diode- this device that convert light into an An SCR is turned off when its turn-off time is less than
electrical signal when connection is reverse bias.
circuit turn-off time.
21. (a) Circuit turn off time- It is defined as the time during
It has voltage series negative feedback. Its voltage gain which a reverse voltage is applied across a thyristor
is less than 1 and current gain is high, due to its high
during its commutation process.
input impedance and low output impedance, its
SCR turn off time < circuit turn off time.
impedance matching. Common collector is also known
If the circuit turn off time is less than the SCR turn off
as emitter follower.
time then forward bias voltage gets applied across even
22. (b)
before the thyristor could reason its forward blocking
Rise time of an amplifier is measured with respect to
time, i.e. , capabilities and gets turn off again or the device turn
off is unsuccessful.
0.35
tr = 29. (d)
B.W.
1
tr ∝
B.W.
Since bandwidth is taken to be the upper 3dB cut-off
frequency.
Hence Bandwidth ≈ higher cut off frequency.
23. (a)
d-Arsonval current = 50 µAmp
1 1
Sensitivity = = Shifting the take off point after the block.
I FSD 50 × 10−6
1000000
= = 20000Ω / V
50
24. (d)
PMMC → Linear scale over the entire range as θ∝ I
Thermocouple → Very good high frequency response. 30. (d)
Moving Iron → Square law type scale as θ∝ I 2 Fourier transform of u(t) is given →
1 + sgn ( t )
Electrostatic type → Mainly used for high voltage we know that, u(t) =
2
measurement θ∝ V 2
1 sgn ( t )
25. (b) u(t) = +
2 2
The Karnaugh (K) map is a method of simplifying
Boolean algebra expressions. Fourier transform of 1 ↔ 2 π δ ( ω )
No. of Variables = 2n 2
No. of cells in K-map = 22n Fourier transform of sgn (t) ↔
jω
26. (d)
2
Universal gates are -
2πδ ( ω) +
NAND gate and NOR gate. jω
• All gates are implement by NAND gate and NOR u ( t ) ←
F.T.
→
2
gate.
1
u ( t ) ←
F.T.
→πδ ( ω) +
jω
∂F ∂F
∇F = ˆi + ˆj we know that –
∂x ∂y
( cos θ − i sin θ )
n
∂ ∂ = cos nθ − i sin nθ
= ( x + y)i + ( x + y) j
∂x dy C = cos10θ − isin10θ = (cos θ + i sinθ)-10
42. (c)
∇.F = ˆi + j The waveguide modes are usually excited from a signal
34. (d) source through a coaxial cable.
White Noise consists of signal of all frequency. 43. (d)
Mode JE JC Application
Random signal one considered as white noise if they are
Saturation Forward Forward 'ON' Switch
observed to have a flat Spectrum. It's spectral density bias bias
N0 Cut-off Reverse Reverse 'OFF'
remains constant. PSD of white noise = Sx (F) =
2 bias bias Switch
Active Forward Reverse Amplifier
35. (c)
bias bias
The relation between auto-correlation and power Reverse Reverse Forward Attenuator.
spectral density is called Weiner-Khintchin Theorem. Active bias bias
Practice Set-4 53 YCT
44. (c) P-1, Q-3, R-2, S-4 uses voltage-series feedback. Its input resistance is high
n- channel enhancement MOSFET–Transfer and output resistance is low. This makes it an ideal
characteristics circuit for impedance matching.
47. (b)
W1 = W2
Then,
W − W1
tan φ = 3 2
n-channel depletion MOSFET– Transfer characteristics W1 + W2
W − W1
= 3 1
W1 + W1
tan φ = 00
P-channel enhancement MOSFET's Transfer φ = 00
characteristics
So, cos φ = cos 00 = 1
48. (b)
Given decoder To be implemented Required
decoder
P-channel depletion MOSFET's Transfer characteristics 3×8 4×16 2+0= 2
2×4 3×8 2+0 = 2
3×8 6×64 8+1= 9
4×16 6×64 4+0 = 4
4×16 8×256 16+1= 17
49. (b)
No. of data input = n
45. (b) No. of control input = m
The drain current in saturation for a JFET is given by: then m = 2 n
2
V 50. (d)
I D = I DSS 1 − GS ..........(i)
VP
∂I D 2I V
= DSS 1 − GS ....(ii)
∂VGS VP VP
2
VGS ID
1 − =
VP I DSS 10
s 10
VGS 1D CLTF = =
1 + × 0.1 s + 1
1 − = 10
VP I DSS s
put in equation (ii)
2IDSS ID
gm =
VP I DSS
2 I2DSS I D
gm =
| VP | IDSS
2
gm = I DSS .I D
| VP |
46. (a)
Common collector circuit is also known as emitter 10K
follower. Emitter follower's voltage gain is slightly less OLTF G ( s ) H ( s ) =
s ( s + 1)
than unity. Its current gain is high. Emitter follower
Practice Set-4 54 YCT
10K For Vth-
K v = lim s G ( s ) H ( s ) = lim = 10K
s→0 s →0 s +1 I1 = 0 for open circuit-
1
ess = < 0.01
Kv
1
< 0.01
10K
K >10 equivalent circuit Vth = 40V
51. (d)
Given that-
ωn = 11rad/sec. 54. (b)
ξ = 0.6 Given that-
We know that- I = 5A
r = 5cm = 5×10–2 m
ωd = ωn 1 − ξ2 =11 1 − 0.62 =11× 0.8 flux density at the surface of density
ωd = 8.8rad / sec µ I
(B) = 0
2πr
52. (a)
Final value theorem is used to get steady state value of 4π× 10−7 × 5
=
the system output. 2 × π× 5 ×10−2
Initial value theorem → B = 2×10–5 T
If L {f ( t )} = F ( s ) then lim f ( t ) = lims F ( s ) B = 20µT
t →0 s →∞
55. (b)
Final value theorem → For maximum
lim f ( t ) = lims F ( s ) modulating index (m) = 1
t →∞ s→0
53. (a) m2 1
Power efficiency (η) = =
2 + m2 2 +1
1
= = 33.33%
3
56. (b)
For Rth- The directivity of a λ/2 long wire antenna is 1.66.
57. (c)
TRAP is a non-maskable interrupt. It consists of both
level as well as edge triggering and is used in critical
power failure conditions.
58. (a)
Dotted decimal notations are used to make string easily
Vth 1 in which periods or dots separate four decimal numbers
R th = =
I2 I2 from 0 to 255, describing 32 bits.
I2 = –I1 ………………………..(i) 59. (c)
Apply KVL in outer loop The counter e.m.f. of a d.c. motor helps in energy
−1 − 10 ×1.8I1 − 6I1 = 0 conversion.
• The electrical work required by the motor for causing
−24I1 = 1 the current against the back e.m.f. is converted into
1 mechanical energy and that energy is induced in the
I1 = −
24 armature of the motor.
From equation (i)- • Energy conversion in DC motor is possible only
1 because of the back e.m.f.
∴ I2 = 60. (a)
24
Energy bandgap is also known as forbidden gap, No
1 1
R th = = = 24Ω electrons stay in this band, valence electrons pass
I 2 1/ 24 through this gap.
Practice Set-4 55 YCT
1 68. (b)
EG ∝
Temperature In this question
Digital modulation Technique is
this shows as T ↑→ E G ↓
Also E G (T) = (E G 0 − β0 T) eV
Where E g0 → Energy bandgap at 0ºK
β → Material constant eV/K
61. (b)
F(ω) =1
Take inverse fourier transform
f(t) = δ(t) Given all option are digital modulation technique
62. (b) schemes but the most appropriate option amongst them
An attenuator can be used as waveguide operated below is ON - OFF keying which is also known as ASK.
cutoff frequency. Attenuation is of precision and Amplitude Shift keying (ASK) is a form of Amplitude
variable type and its output around (0-50dB) modulation that represents, digital data as variations in
range. the amplitude of a carrier wave.
63. (d) 69. (c)
Silicon has a preference in IC technology because of x (n) = δ(n)
the availability of nature oxide SiO2. ∞
V+ = Vin V– = Vout In this figure, the direction of current in this coil will be
Due to virtual short, same.
V+ = V– So, the mutual coupling is associative in nature.
∴ Vin = Vout L L − M2
Leq = 1 2
Output voltage follows the input voltage L1 + L 2 − 2M
∴ voltage follower
71. (a)
66. (b)
From third equation of Maxwell a time varying
CRO stands for a cathode ray oscilloscope. It is magnetic field always produces a electric field.
typically divided into four sections which are display,
∂B
vertical controller horizontal controller and trigger. ∇×E = −
∂t
CRO work in time domain.
The negative sign indicate that the induced emf always
67. (a) opposes the time-varying magnetic flux.
Johnson counter is a modified ring counter where the 72. (c)
invented output from the last flip-flop connected to the
In amplitude modulation the information changes the
input in the first. This register cycles through a
amplitude of the carrier wave without changing its
sequence of bit platform. The mode of Johnson counter
frequency or phase.
is 2n if n flip-flop are used. Main advantage of Johnson
2 2
counter is that it needs half the number compared to the PC = PT 2
= PT = 0.6666 PT
ring counter for same MOD. 2+µ 2 +1
∫ x(t)e
− jω t
26. (b) X( ω) = dt
−∞
Y = AB + CD
T/2
X(ω) = ∫ A.e− jωt dt
Y = AB + CD −T / 2
T/ 2
Y = AB.CD Ae− jωt
X(ω) =
− jω −T/ 2
A − jωT 2 − jω( −T 2)
= e −e
− jω
A.T ωT 2 2
= .sin
ωT / 2 2 1 1
= × 2 × 10−6 × 12 ×12 + × 2 × 10−6 × 12 ×12
AT ωT 2 2
= sin
ω.T 2
−4
= 2.88 × 10 J
2 33. (b)
If two vectors are orthogonal it means they are
ωT
perpendicular to each other i.e. the dot product of the
X ( ω ) = AT sin
2 two vector is zero.
ωT
2 V1.V2 = 0
ωT 34. (c)
X( ω) = AT sinc
2 Auto-correlation function is an even....
Thus Fourier transform of a rectangular pulse for a R ( τ ) = −R ( −τ ) is not true (since it has even symmetry)
period is a sinc function.
31. (b) 35. (b)
E X − E ( X )
3
= E X3 − 3X 2 E ( X ) + 3E 2 ( X ) X − E3 ( X )
= E X3 − 3E ( X ) E ( X 2 ) + 3E 2 ( X ) E ( X ) − E 3 ( X )
R1 ,R 2 ,R 3 = ? = E X3 − 3E [ X ] E X 2 + 2E 3 [ X ]
5 × 30 36. (a)
R1 = = 3Ω Neighboring base stations are assigned different group
50
30 × 15 of channels it minimizes the interference between base
R2 = = 9Ω stations and the users under their control.
50
37. (c)
5 ×15 3
R3 = = = 1.5Ω Status register is a hardware register that contains
50 2 information about the state of the processor and is not a
32. (c) part of programming model.
38. (b)
An input output processor controls the flow of
information between main memory and input output .
The CPU assigns the task of initiating the input output
program. The input output processor operates
independently from the CPU and transfers data
between peripherals and memory.
39. (b)
The transformer is a constant main flux device.
At steady state, capacitor will be open-circuited so, Transformer works on principle of electromagnetic
equivalent circuit is- induction.
40. (c)
Diamagnetic materials have the highest reluctance.
Reluctance : This is a property of a material that
opposes the magnetic field lines.
This is an analogy with the resistance in electric
circuits.
∵ VAD = VBC Reluctance is defined as :
mmf NI
VAD =
( 2 + 4 ) ×16 = 12V flux
=
φ
8
Practice Set-5 68 YCT
41. (c) We known that:- Energy meter -
e +eiθ − iθ
• It is an integrating type instrument.
cos θ =
2 • Its principle is similar to transformer.
eiθ − e − iθ • It is known as watt-hour meter and used to measure
energy in kWh
Sin θ= 2i
42. (d) φ2 ⋅ N
Tb ∝ ×R
In a rectangular waveguide electromagnetic waves are Re
reflected from the walls. So, there is only conductor
present in a rectangular waveguide. So, it did not Where,
support TEM. It only supports TE and TM mode. N → speed in rpm
43. (c) φ → Flux
The voltage gain of CC configuration- Tb → Braking torque
Vout 1 R → radius of disc
AV = =
Vin re' Re → resistance in path of current (i.e. disc)
1+
re 48. (a)
1 9 X = AB.AB
= = = 0.9
( )( )
10 10
1+ = A+B A+B
90
44. (a)
Drain current, = A.B + AB
2 = AB + AB
V
I D = I DSS 1 − GS = AB + AB
VP
where, ID = Drain current X =A⊕B
IDSS = Maximum value of current when Y =A+B
VGS = 0
= AB
ID = IDSS
= AB
VP = Pinch off voltage
VGS = Gate to source voltage
45. (b)
Crossover distortion occurs in class B amplifiers
because the amplifier is biased at its cut-off point. Hence, the given logic function is half adder.
46. (b) 49. (b)
For n-bit parallel substractor, n-full adder are needed.
Given,
The parallel binary subtractor is formed by the
Gain, A = 100 combination of all full adder with subtrahend
Feedback, β = 0.03 complemented input. So for 12-bit parallel substractor,
A 12 full adder needed.
Overall gain, A f =
1 + Aβ 50. (c)
A PD controller is used to compensate a system by
100
= adding a zeros to the system. PD controller is used to
1 + 100 × 0.03 improve transient stability of the system.
A f = 25 Properties of PD controller-
(i) Improve transient stability.
47. (d)
(ii) Increases damping
Creep error is associated with energy meter. In energy
(iii) Reduces the overshoot
meter, if the friction is over compensated or there is
excessive voltage across the potential coil there is a (iv) Improve system response
tendency for the disc to run even when there is no (v) Increases the bandwidth and noise of system
current through the current coil is called creeping for (vi) It does not increase the type of the system
preventing creeping two diametrically opposite hole are (vii) It amplify noise and reduces signal to noise (S/N)
drilled in the opposite side of the disc. ratio.
Practice Set-5 69 YCT
51. (c) : E = − 4a x V/m
Acceleration error constant (ka) 55. (b)
= lims [ OLTF] = lims [ G(s)]
2 2
s →0 s→0
Total modulation index, in case of modulation by
several sine waves is given by
52. (b)
Laplace transform is the integral transform of given µ t = µ12 + µ 22 + µ32 + ...
derivative function with real variable t to convert into a
56. (a)
complex function with variables.
∞
Half wave dipole antenna is also known as Hertz
F(s) = ∫ f (t)e − st dt antenna. Hertz antenna is a dipole antenna of length
−∞
equal to half of the wave length of transmitted
The Laplace transform is a complex valued function of
electromagnetic wave.
a complex argument as s = σ + jω .
λ
53. (c) ℓ=
2
Apply millman's theorem-
57. (c)
SIM stands for set interrupt mask. It is 1-byte
instruction and it is a multipurpose instruction. The
main uses of SIM instruction are - masking/unmasking
of RST7.5, RST6.5 and RST5.5.
58. (b)
⇓
As a default in Microsoft Excel, text types into a cell is
a aligned to the left border of cell while numbers are
aligned to the right.
59. (b)
Given, sf = 6% = 0.06
V V V sf + s b = 2
+ +
V1 = R R R 0.06 + s b = 2
1 1 1
+ + s b = 2 − 0.06
R R R
s b = 1.94
1 1 1
V + + 60. (a)
V1 =
R R R
1 1 1 The total current in a semiconductor is proportional to
+ + Gradient of fermi potential. The fermi level is the
R R R
energy which is occupied by electron orbital at
V1 = V temperature equal to 0K.
Req = R||R||R 61. (d)
Req = R/3 ∞
A B Q Q
64. (b) 1 0 1 0
The frequency of the Hartley oscillator is given by 0 0 1 0
1 0 1 0 1
f= LT = L1 + L2
2π L T C 0 0 0 1
1 1 1 0 0
=
2 π 3 × 10 × 0.1 × 10 −9
−3
So, the circuit is a SR flip-flop.
1 68. (b)
= = 290575.84Hz
2π 0.3 × 10 −12 The modulating system where different data bits are
= 290.57 kHz. represented by differing phase is phase shift keying.
65. (b) The phase shift keying (PSK) is known as Quadrature
phase shift keying. (because there are four symbols- like
Op-Amp characteristics -
00, 900,1800 and 2700).
• Open loop gain (ACL) = ∞ → very high
• Input resistance (Ri) = ∞ → very high
• Output resistance (R0) = 0 → very small
• Bandwidth (BW) = ∞ → very high
• CMRR = ∞ → very high
• Slew rate = ∞ → very high
• Offset voltage = 0 → very low. 69. (a)
Final value theorem in z-transform is -
lim x ( k ) = lim ( z − 1) X + ( z )
k →∞ z →1
70. (b)
Transfer impedance of any two port network is defined
as the ratio of voltage at one port and current transfer at
the another port.
71. (d)
ρ
Function diagram of op-amp - ∇.E = (Gauss's law)
ε0
∇. B = 0 (monopole not exist)
∂B
∇×E = (Faraday's law)
∂t
∂E
∇ × B = µ0 J c + µ0ε0 (Ampere's Law)
∂t
72. (a)
66. (a)
S(t) = cos ωct + 0.5 cos ωmt sin ωct
The time base (sweep or ramp) generator produces a
saw - tooth wave of the same frequency as the input cosωct & sinωct both are carrier component.
signal to the Y-plates. The sweep width in a CRO is both carrier component are in phase quadrature (90º)
controlled by horizontal gain control. so, this signal is a narrow band FM (NBFM) signal.
Solution
1. (a) 3. (a) ASK signaling scheme is most affected by noise as
According to Einstein's Relation- minimum distance between two signaling most is r in ASK
At constant temperature, ratio of diffusion constant with compare to other modulation technique.
to mobility is constant and it is equal to thermal 4. (a)
voltage. For 2's Complement representation, the range of values
It gives the relationship between diffusion constant, that can be represented on data bus of an 8-bit
mobility & thermal voltage. microprocessor (n = 8) is -
−2 n −1 to + 2n −1 − 1
D Dn
= VT = VT → For electron
µ µn −28 −1 to + 28−1 − 1
−128 to + 127
µ 1 DP
= = VT → For hole 5. (c)
D VT µP
Let each stage take T units of time.
µ So, N state units of time = N × T
= VT−1
D N×T
Hence, speed up from N stage pipeline = =N
Where → D = Diffusion constant T
VT = Thermal voltage The speed up factor cannot be greater than number of
stages in pipeline. Hence, the speedup will be equal to
µ = mobility
N.
2. (a) 6. (c)
As diode is forward biased then it will act like a short Equal voltage distribution is obtained by connecting a
circuit (S.C) suitable resistance across every SCR such that each
parallel combination has the same resistance. These
type of circuit is known as equalizing circuit.
7. (d)
As we know
Transfer function = L{Impulse response}
Given, Impulse response (IR) = e–8t
So,
T.F = L{e–8t}
+3V − ( −3V ) =
1
∵ L{ e–at } =
1
I=
10k s+8 s+a
8. (a)
=
( 3 + 3) V = 6
= 0.6mA
10 × 103 10 × 103 y ( n + 1) + 0.5n y ( n ) = 0.5x ( n + 1) is linear system, time
varying system, causal system and dynamic system.
V = −3V and I = 0.6 mA
Memory less system is also called static system.
Practice Set-6 1 YCT
9. (c) 15. (d)
The line code that has zero dc component for pulse The fatigue life of a part can be improved by Shot
transmission of random binary data is Alternate Mark peening.
Inversion (AMI). Shot peening is a cold work process used to finish metal
10. (d) parts to prevent fatigue and stress corrosion failures and
prolong product life for the part.
• A low pass filter circuit basically an integrating
circuit with larger time constant. In shot peening, a small spherical shot bombards the
surface of the part to be finished.
• A low pass filter is a circuit can be designed to
16. (a)
modify, reshape or reject all unwanted high
frequencies of an electrical signal and accept or pass Dielectric loss, loss of energy that goes into heating a
only low frequency signals wanted by the circuit dielectric material in a varying electric field.
designer. Dielectric loss (P) = 2πf V2C cos(90º – θ) {∵φ = 900–
θ}
(P) = 2πf V2C sinθ
In most of the dielectric, the angle θ is very small -
∴ sinθ = tanθ
P = 2πf V2C tanθ
So,
[Low Pass Filter]
The dielectric loss is proportional to f.
V0 ( s ) 1 1 1 17. (d)
= T.F. = = =
Vi ( s ) 1 + sCR 1 + sT 1 + jωT π
2
V( 0) ( t ) = V0 e−1/ T ∫ sin θ dθ
6
0
Less the time constant → Faster will be the discharge
Here n = even
More the time constant → Slower will be the discharge
(6 − 1)(6 − 3)(6 − 5) π
So, for the capacitor to act as an integrator. =
(6 − 0)(6 − 2)(6 − 4) 2
11. (b)
5 3 1 π 5π
White noise consists of signals of all frequency. = × × × =
6 4 2 2 32
Random signals are considered as white if they are
observed to have a flat spectrum its spectral density 18. (c)
remains constant or uniform. Iris wave guide is difficult to adjust Iris wave guide is
12. (a) basically just an obstruction sitting within the wave
guide.
Physical layer is not the layer of TCP/IP protocol.
19. (d)
TCP/IP model has 4 layers-
• Consider the P-N diode for Ge 0.3 eV is the
(i) Application layer. breakdown voltage and in the case of silicon (Si) its
(ii) Transport layer 0.7eV Since the Impurities are added in the same
(iii) Internet layer amount the bond due to the other atoms of the silicon
(iv) Network access layer. makes it resistive compared to the Ge.
13. (c) • When a sample of germanium and silicon having
same impurity density are kept at room temperature
In 8085 microprocessor overflow flags are not
available. There are five flags in 8085 microprocessor then, Resistivity of silicon will be higher than that of
(i) Carry flag (ii) Auxiliary carry flag (iii) Sign flag (iv) Germanium.
Parity flag (v) Zero flag. 20. (d)
14. (a) • Hall element are used in sensor to time the speed of
Frequency shift in the BFSK-Range in 50 to 1000 Hz. wheels and shafts.
Binary phase-shift keying is a digital modulation • Varactor diode or varicap diodes are used mainly in
scheme that conveys data by changing, or modulating, radio frequency to provide voltage controlled
two different phase of a reference signal. variable capacitor tunning in tank circuit.
[ML2T −2 ]
V= = [ML2T −3I −1 ] W = [ML2T–2]
[IT]
Q = [IT]
V
R= = [ML2T −3I −2 ]
I
R = [ML2 T–3 I–2] 27. (b)
Dimension of Inductance- Triac–An SCR is a unidirectional device as it can
conduct from anode to cathode only and not from
Nφ φ
L= ,= L ∝ cathode to anode. But TRIAC is directional.
I I
φ = [ML2 I–1 T–2]
[ML2 I −1T −2 ]
L=
[I]
L = [ML2 I –2 T–2]
28. (c)
Dimension of capacitance- Diode - Forward resistance
q W SCR - Holding current
C=
V V = q , q = [IT] BJT - Active region
FET - Pinch off voltage
q2 Forward resistance- The opposition offered by diode
C= [W = F.d = ma.d]
W to DC flowing current in forward bias condition is
a = [LT–2] known as DC forward resistance or static resistance.
Holding current-Holding current of SCR is that
[I 2T 2 ]
C= W = [M L2 T–2] minimum value of current below which anode current
[ML2T −2 ] becomes zero and thyristor must fall to come in OFF
C = [M–1 L–2 T4 I2] state.
Practice Set-6 82 YCT
Active region- Active region is the region between cut 32. (b)
off and saturation region in a bipolar junction transistor.
In this region collector- base junction remains reverse
biased and base- emitter junction is in forward biased.
Pinch off voltage- Pinch off voltage refers the threshold
voltage below which device turn off. Behaviour of uncharged inductor after excitation i.e. at
In FETs, the pinch off voltage is the value of VDS when t=0+ is open circuit.
drain current reaches constant saturation value.
29. (c)
Type Step input Ramp Parabolic
input input
Type-0 A/1+K ∞ ∞ V 20
i= = = 1 Amp.
R 20
Type-1 0 A/k ∞
33. (a)
Type-2 0 0 A/k Given a = 2i − 2 j − k and b = 3i + 2 j + k
30. (b)
| a |= 2 2 + ( −2 ) 2 + (1)2 = 3
ejω0t x( t ) ←
F.T.
→X( ω−ω0 )
and a.b = ( 2i − 2 j − k ) . ( 3i + 2 j + k )
We know that
1←
F .T .
→ 2 π δ (ω ) = (6 – 4 – 1) = 1
a.b 1
∴ejω0t1←
F.T
→2πδ( ω−ω0 ) Then, projection of b on a = =
|a| 3
1 jω0t
δ ( ω− ω0 ) ←
I.F.T.
→ e 34. (d)
2π Overall noise figure F of the system is
31. (b) F2 − 1
F = F1 +
The circuit can be redrawn as: G1
F1 = F2 = 10dB = 10 in absolute units
G1 = 10 dB = 10 in absolute units
10 − 1
So, F = 10 +
10
9
= 10 +
10
The bridge is balanced and the current through middle = 10 + 0.9
branch will be 0. = 10.9
35. (a)
2
Energy density spectrum = S(f )
2
= 19
= 361
36. (c)
ARQ (Automatic repeat request) is an error control and
packet recover method for data transmission in which
the receiver sends an alert to the sender if a packet is
missing, So that the sender can resend the missing
packet.
∴ Cab = C1 + C 2 37. (d) XRA A←A⊕A
= 0.05 + 0.05 The content of accumulator (A) will be zero after XRA
Cab = 0.1µF A Hence result is zero So, Zero flag is set.
Practice Set-6 83 YCT
38. (d) 44. (a)
The performance of cache memory is frequently measured Component Symbol
in terms of a quantity called hit ratio. We can improve
cache performance using higher cache block size, higher (a) NPN Transistor
associatives, reduce miss rate, reduce miss penalty and
reduce the time to hit in the cache.
hit no.of hits
Hit ratio = =
hit + miss Totalaccesses (b) SCR
39. (c)
N2 3
Given that, = , V1 = 240 V
N1 1 (c) FET
V2 = ?
V2 N 2 V 3
∵ = ⇒ 2 = ⇒ V2 = 720V.
V1 N1 240 1
(d) MOSFET
Thus Vmax = 2 × 720 = 1018.23V and frequency
always remains constant
40. (b)
45. (b)
Flux φ
Flux density = B= Operating cycle of class C amplifier is less than one -
Area A Half cycle means the conduction angle is less than 180º
φ = 1.2 mWb = 1.2 × 10–3 Wb and its typical values is 80º to 120º.
A = 30 cm2 = 30 × 10–4 m2 46. (a)
Given,
1.2 × 10 −3
flux density = = 0.4 T β = 0.01
30 ×10 −4
A = 50
41. (a)
R 1 = 2.87kΩ
Given A ⊂ B ⇒ n ( A ∩ B ) = n ( A )
In voltage series F.B, Rif = Ri × D
P ( A ∩ B)
∴ P ( A / B) = D = 1+βA
P ( B) = 1+0.01(50)
P(A) 3
= D=
P ( B) 2
1 1 Rif = Ri×D
=
4 3 3
= 2.87 ×
3 2
=
4 R if = 4.305kΩ
= 0.75 47. (b)
42. (d) Energy meter is integrating type instrument. It is a
The mode with lowest cut-off frequency for an device that measures the amount of electrical energy
electromagnetic wave propagating between two consumption.
perfectly conducting parallel plates of infinite extent is 48. (d)
TEM. The transmission line which consists of two or According to given logic circuit
more conductors can support TEM wave propagation.
F = S1 S 0 I0 + S1S0 I1 + S1 S 0 I2 + S1S0 I3
43. (b) Given,
S = 40 ∂ICO = 1 µA F = A BC + ABC + ABC + ABC
70. (a)
Y
Output Y(s)
Network function H(s) = =
Input X(s)
71. (a)
The electric susceptibility and relative permittivity are
related as χ =εr − 1
72. (a)
65. (b)
µ2
–g R PT = PC 1 +
Ad m c 2
CMRR = = –R c = 2g m R E
A cm 2R PC = Carrier Power
E
µ = Modulation Index
−R C PT = 50 +10 = 60W
A cm =
2R E µ = 100% = 1
As R E ↑→ A d ↑→ A c ↓→ CMRR ↑ 1
60 = PC 1 +
2
When RE is increased then Acm is decreased and CMRR
increases. PC = 40W
R ∝ ( Pt )
1/ 4 1
= n × TCLK ∵ TCLK =
f CLK
Now to double the range R, Pt has to be increased by a
factor of 16. 1
= 10 ×
75. (b) FCLK
8251 IC is a USART. USART is standing for universal
10
synchronous asynchronous receiver transmitter acts as a =
mediator between microprocessor and peripheral to 1MHz
transmit serial data. 10
76. (a) =
1× 106
Superconducting material in super conduction state has = 10 µs
zero relative permeability because at super conducting
state inside the conductor B = 0. 82. (d)
Perfect diamagnetism means induced magnetic field Depth of penetration or skin depth (δ) may be defined
cancels exactly the applied magnetic field. This as -
exclusion of magnetic flux from the interior of a 1 2 ε
superconductor is called the Meissner effect. δ= =
α σ µ
77. (b)
The microwave tube that uses buncher and catcher σ µ
Where, α = = attenuation constant in a lossy
cavities is klystron. Klystron are used at ultra high 2 ε
frequency and 100 GHz frequency operation band. dielectric.
78. (b) Hence, depth of penetration of a wave in a lossy
The important blocks of IC 555 timer has two dielectric increases with increasing permittivity.
comparators, which are basically 2 operational 83. (c)
amplifiers an R-S flip flop, two transistors and a
The artificial boosting of higher modulating frequencies
resistive network.
is called as pre-emphasis.
79. (a)
84. (a) Source coding is used to reduce the redundancy
Linear variable differential transformer (LVDT) LVDT to improve the efficiency which make information rate
is the most widely used inductive transducer for increase.
converting the linear motion into proportional output
85. (a)
electrical voltage.
Range resolution is the ability of a radar to distinguish
80. (b)
between two or more targets which are very close to
Figure of merit (FOM)
each other.
FOM = tpd × PD(avg) pico joules
If short duration pulse is used then pulse repetition
Where tpd = propagation time delay. frequency increases causing Improvement in range
PD = power dissipation. resolution.
Practice Set-6 87 YCT
86.(a) 94. (c)
In 8051 microcontroller when line is HIGH, PC points T.V. Resolution is defined by the amount of Horizontal
internal code memory if it is reset. and vertical pixels.
87. (a) If Resolution is high, the quality of picture will be high.
It is depends on the number of frames scanned per second.
A tunnel diode or Esaki diode is a type of
semiconductor diode that has effectively "negative 95. (b)
resistance" due to quantum mechanical effect. Tunnel Microprogram is a microinstruction program that
diode has highly doped p and n region. controls the instructions of a central processing unit or
peripheral controller of a computer.
88.(d)
96. (a)
Avalanche photodiodes are preferred over PIN diodes in
optical communication system because of large power Rms value for triangular wave
handling capacity. V
Vrms = m
89. (c) 3
A = Address register = 12 bit Vm
100 =
D = Data register is 8 bit 3
Memory size = 2A × D Vm = 100 3V ⇒ Vm = 173.2V
= 212× 8
97. (d)
= 212 × 23
Viruses often perform harmful activity on infected host
= 215 computers. Such as acquisition of hard disk space or
= 32768 bits central processing unit (CPU) time. Resident viruses
90. (a) install itself and resides in RAM and overwrite interrupt
handling code and when the operating system attempts
From De Morgan's theorem - to access the target file or disk sector, the virus code
F = xy or F=x+y intercepts the request and redirects the control flow to
the replication module, infecting the target this virus
F=x+y F = x.y steals the CPU time.
91. (b) Keystorke logging (Keyboard capturing) is the action of
recording the keys struck on the a keyboard so that
nth harmonic can be eliminated by the pulse width
person using the keyboard is unware that their actions
2× π
= are being monitored.
n Keyloggers are most often used for the purpose of
n=5 stealing passwords.
2 × 180 Keylogger viruses are zeus and SpyEye trojans viruses
Pulse width = cannot affect the word length (increase/ decrease the
5
address size) of CPU.
= 72º 98. (d)
92. (a) Hot wires ammeters uses the heating effect of current so
• Encoding is possible in PCM very high noise it is all the same for both ac and dc as heat generated is
square function of current.
immunity i.e. better performance in presence of
Noise. Convenient for long distance communication. Hot wire instrument is made up of platinum-Iridium
wire.
• PCM have largest bandwidth. It is the biggest 99. (d)
disadvantage as compared to AM system. A 3-phase full wave bridge rectifier yields six diodes.
• Good signal to Noise Ratio compare to AM. 100. (a)
93. (c) Given system is 4th order all pole system that means it
has four (4) poles only at origin.
Numerical aperture (N.A) = n12 − n 22
K
G(s) = 4
Numerical aperture is used to describe the light s
gathering ability of an optical fiber. Numerical aperture
Slope in Bode magnitude plot = –4×20 dB/dec.
is a measure of acceptance angle of a fiber. It also gives
the light gathering capacity of the fiber. = –80 dB/dec
1 (a) (b)
(d) the wavelength of intensity between each
8
pair of walls
19. A bar of intrinsic germanium 5 cm long is
subjected to an electric potential of 12 V. If the
velocity of electrons in bar is 75 m/s, then find
mobility of electrons. (c) (d)
(a) 31.25 cm2 /V-sec (b) 3.125 cm2 /V-sec
2
(c) 3125 cm /V-sec (d) 60.25 cm2 /V-sec
20. Zener diode break down voltage ______with
temperature 29. The steady state error of a stable 'type 0' unity
(a) decreases (b) constant feedback system for a unit step function is
(c) increases (d) may increase or decrease 1
21. What is the name of the circuit shown below? (a) 0 (b)
1+ Kp
1
(c) ∞ (d)
Kp
30. Frequency spectrum of a periodic signal
(a) continuous (b) Discrete
(c) Anything (d) no spectrum
31. The colour band on the extreme left in general
(a) Miller sweep purpose fixed resistors represents:
(b) Bootstrap sweep (a) Tolerance
(c) Schmitt trigger (b) First significant digit
(d) Triangular wave generator (c) Wattage Rating
22. The current gain of a BJT is (d) Voltage Rating
gm 32. When a unit impulse voltage is applied to an
(a) gmro (b) inductor of 1H, the energy supplied by the
ro
source is
gm (a) ∞ (b) 1 J
(c) gmrπ (d)
rπ (c) (1/2) J (d) 0
Practice Set-8 104 YCT
33. Laplacian of a scalar function V is : 42. In a parallel plate waveguide, what is the
(a) Gradient of V principal wave?
(b) Divergence of V (a) TEM wave
(c) Gradient of the gradient of V (b) TE wave
(d) Divergence of the gradient of V (c) TM wave
34. Noise figure is defined as (d) Combination of TE and TM waves having
axial components of both electric and
S / Ni S / N0
(a) F = i (b) F = 0 magnetic fields
S0 / N 0 Si / N i 43. Match List-I (Regions of bipolar transistor in
S0 / N 0 Si / Ni monolithic IC) with List-II (Physical
(c) F = (d) F = properties) and select the correct answer using
Si / N i S0 / N 0
the codes given below the lists:
35. Find overall noise figure, if two blocks are List-I List-II
cascaded having Noise Figure (F) = 10 dB, Gain A. Emitter 1. Moderate resistivity
= 10dB _____.
B. Base 2. Very high resistivity
(a) 10.9 (b) 11.1
C. Collector 3. Large size
(c) 10 (d) 20
D. Substrate 4. Very high conductivity
36. Cloud infrastructure shared by several
Codes:
organizations and supporting a specific group
A B C D
is called:
(a) 1 4 2 3
(a) Private cloud (b) Community cloud
(b) 4 1 2 3
(c) Public cloud (d) Hybrid cloud
(c) 4 1 3 2
37. The cycle required to fetch and execute an
(d) 1 4 3 2
instruction in 8085 microprocessors is which
one of the following? 44. In a MOSFET, the pinch-off voltage refers to
(a) drain-to-source voltage at which drain-to-
(a) Memory cycle (b) Clock cycle
source current is zero
(c) Instruction cycle (d) Machine cycle
(b) gate-to-source voltage at which gate-to-
38. An advantage of memory interfacing is that source current is zero
(a) A larger memory is obtained (c) drain-to-source voltage at which gate-to-
(b) Effective speed of the memory is increased source current is zero
(c) The cost of the memory is reduced (d) gate-to-source voltage at which drain-to-
(d) A non-volatile memory is obtained source current is zero
39. A Buchholz relay can be installed on 45. The class of amplifier operation characterized
by highest efficiency, high distortion is:
(a) auto-transformers
(a) Class - A (b) Class - B
(b) air-cooled transformers
(c) Class - C (d) Class - AB
(c) welding transformers
46. The unity gain bandwidth of an inverting
(d) oil cooled transformers amplifier is 10 MHz What would be the
40. A permeable substance is one bandwidth if the gain is increased to 10V/V?
(a) Which is strong magnetic (a) 100 MHz (b) 1 MHz
(b) Which is weak magnetic (c) 10 MHz (d) 1 kHz
(c) Which is a good conductor 47. Which one of the following has a magnetic
(d) Through which magnetic lines of force can brake?
pass easily (a) Thermocouple ammeter
41. A bag contains eight white and six red marbles. (b) Energy meter
The probability of drawing two marbles of (c) Frequency meter
same colour is (d) Thermocouple voltmeter
8
C2 .6 C2 8
C2 6
C2 48. A full adder can be made out of……….
(a) 14
(b) 14
+ 14
C2 C2 C2 (a) two half adders
8
(b) two half adders and a OR gate
C2 .6 C2 8
C2 6
C2
(c) 14
(d) + (c) two half adders and a NOT gate
C2 .14 C2 14
C2 12
C2 (d) three half adders
Practice Set-8 105 YCT
49. Ring, shift and Johnson Counters are : 57. How many hardware interrupts are there in
(a) Synchronous Counter 8086?
(b) Asynchronous Counter (a) 12 (b) 6
(c) True Binary Counter (c) 2 (d) 8
(d) Synchronous and true Binary Counter 58. Which of the following type of network is used
50. The use of Pl controllers : to cover small geographical area?
(a) reduces oscillations (a) LAN (b) MAN
(b) results in zero steady-state error for step input (c) VAN (d) WAN
(c) lowers peak overshoot 59. Alternators operate on the principle of
(d) improves relative stability (a) Electro-magnetic induction
51. In Routh's-Hurwitz criterion, if there are (b) Self-induction
changes of signs in the elements of the first (c) Mutual induction
column, then the number of sign changes (d) Self or mutual induction
indicates 60. The unit of mobility is
(a) The number of roots with negative real parts (a) m2V–1S–1 (b) mV–1S–1
–1
(b) The number of roots with positive real parts (c) Vsm (d) Vms–1
(c) The number of pair of roots of opposite sign 61. Given that
(d) The number of pair of roots of same sign 1 0 0
52. The most commonly used sampling method is A = 0 2 0
(a) Ideal or impulse sampling
0 0 3
(b) Natural sampling using rectangular pulses
(c) Sample-and-hold method Evaluate A3 – 6A2 + 11A – 10I
(d) None of the above (a) Null matrix
53. The Y-parameter matrix (mA/V) of the two (b) Identity matrix
port network in figure is (c) –4I
(d) None of the above
62. For TM waves in a parallel plate waveguide,
the minimum attenuation arising from
imperfect conductors would occur at a
frequency of (fc is the cut -off frequency).
(a) 3 fc (b) 3f c
(c) 2 fc (d) 2f c
2 −1 2 1
(a) (b) 63. For the circuit shown in figure, minimum
−1 2 −1 2
current required to keep zener diode in reverse
1 −2 2 1 break down region is 4 mA. The maximum
(c) (d)
−2 1 1 2 value of resistance RS to keep zener diode in
reverse break when VZ = 10 V is :
54. According to divergence theorem
∫ A.dS = ?
(a) ∫ ∇.A dV (b) ∫ A dV
V V
(a) 7 kΩ (b) 5 kΩ
(c) ∫ ∇ × A dV
V
(d) ∫ curl ( A ) dV
V (c) 1 kΩ (d) 2 kΩ
55. A PLL can be used to demodulate 64. Crystals used in oscillator circuits for the
(a) PAM signals (b) PCM signals purpose of stabilizing frequency are made of
(c) FM signals (d) DSB – SC signals (a) quartz
56. Which of the following antennas exhibit (b) silicon
circular polarization? (c) germanium
(a) Small circular loop (d) some other semiconductor material
(b) Folded dipole 65. For a given op-amp, CMRR = 105 and
(c) Helical differential gain = 105. What is the common
(d) Parabolic dish mode gain of the op-amp?
Practice Set-8 106 YCT
(a) 1010 (b) 2 × 105 75. What is the maximum number of I/O devices
5 can be interfaced with 8085 using I/O mapping
(c) 10 (d) 1
66. An aquadag is used in a Cathode Ray of I/O device technique?
Oscilloscope of collect: (a) 8 (b) 16
(a) Primary electrons (c) 128 (d) 256
(b) Secondary emission electrons 76. A material is said to have become
(c) Both primary and secondary emission superconductor when
electrons (a) Its resistance becomes negative
(d) None of the above (b) Its resistance becomes very small
67. For an SR flip-flop, S and R are made equal to (c) its resistance decreases
1. What is the value of Q? (d) Its resistance becomes zero
(a) Unchanged (b) Clear to 0
77. What is the condition to satisfying the wall of
(c) Set to 0 (d) Indeterminate waveguide
68. Choose the incorrect statement regarding FM- (a) Thickness of wall > skin depth of material
(a) It has large number of sidebands. wall
(b) Its modulation index is always less than 1. (b) Thickness of wall < skin depth of material
(c) Its BW is greater than that of AM wall
(d) None of the above (c) Thickness of wall =skin depth of material
69. A digital signal processing system is described wall
by the expression:
(d) can be any dimension
y(n) = 2x(n) + x(n–1) +2y(n–1) The system is:
78. When a sinusoidal voltage wave drives a
(a) A stable FIR filter
Schmitt Trigger, the output is a :
(b) A stable IIR filter
(a) Triangular wave (b) Rectified sine wave
(c) An unstable FIR filter
(c) Rectangular wave (d) Trapezoidal wave
(d) An unstable IIR filter
79. A strain gauge with gauge factor 4 and
70. In an electrical network, the number of nodes
is N. Then number of branches B equals resistance 250 Ω undergoes a change of 0.15Ω
during a test. The measured strain is
(a) N (b) N + 1
(c) N - 1 (d) N - 2 (a) 150 × 10–4 (b) 15 × 10–4
–4
71. The numerical value of the ratio of electric field (c) 1.5 × 10 (d) 0.15 × 10–4
intensity E and magnetic field intensity H is 80. Which of the following is non-saturating?
(a) 350 Ω (b) 377 Ω (a) TTL (b) CMOS
(c) 37.7 Ω (d) 35 Ω (c) ECL (d) Both (1) and (2)
72. When β is the modulation index, then the 81. A 10-bit A/D converter is used to digitize
bandwidth of full AM and FM signals are analog signal in the 0 to 5 V range. What is the
respectively (fc = carrier frequency, fm = approximate value of the maximum peak to
baseband frequency) peak ripple voltage that can be allowed in the
d.c. supply voltage?
(a) (fc ± fm) and (fc ± 2β fm)
(a) 100 mV (b) 50 mV
(b) (fc ± fm) and (fc ± β fm)
(c) 25 mV (d) 5.0 mV
(c) (fc ± 2fm) and (fc ± 2β fm)
82. At UHF short-circuited lossless transmission
(d) (fc ± 2fm) and (fc ± β fm) lines can be used to provide appropriate values
73. In an AM transmitter, peak antenna current is of impedance. Match List-I with List-II and
13A and the minimum current is 7A. The select the correct answer using the code given
percentage modulation is below the lists:
(a) 20% (b) 30% List - I List - II
(c) 50% (d) 100%
A. ℓ < λ/4 1. Capacitive
74. What was the first commercial geostationary
communication satellite? B. λ/4 < ℓ < λ/2 2. Inductive
(a) INTELSAT 1
(b) ECHO C. ℓ = λ/4 3. 0
(c) INSAT-TA D. ℓ = λ/2 4. ∞
(d) SPUTNIK
Practice Set-8 107 YCT
Codes : 91. Modulating signal in sinusoidal pulse width
A B C D modulation (SPWM) is:
(a) 2 1 4 3 (a) triangular (b) saw-tooth
(b) 3 1 4 2 (c) square (d) sinusoidal
(c) 2 4 1 3 92. A PAM signal can be detected by using
(d) 3 4 1 2 (a) an ADC (b) an integrator
83. Information is (c) a band pass filter (d) a high pass filter
(a) the synonym of probability 93. A step index fibre has core diameter 40 µm
(b) not related to the probability of information with core refractive indix of 1.3 and numerical
(c) inversely proportional to the probability of aperture 0.5, then the refractive index of
information cladding is
(d) directly proportional to the probability of (a) 1.2 (b) 1.1
information (c) 0.9 (d) 0.8
84. The following image represents: 94. Neutralizing capacitors are normally used in
(a) Audio amplifiers
(b) Video amplifiers
(c) RF and IF amplifiers
(d) Operational amplifiers
95. Which of these is NOT an Operating System ?
(a) Android (b) iOS
(c) Linux (d) Power point
96. A higher value of quality factor results in
(a) Smaller Bandwidth
(b) Larger Bandwidth
(a) Wave Shaping (c) Medium Bandwidth
(b) Shannon-Hartley Effect (d) No effect on Bandwidth
(c) Gibb's Phenomena 97. The data type defined by user is :
(d) Aliasing (a) Built-in data type
85. Losses in optical fibers can be caused by (b) Abstract data type
(a) impurities (b) microbending (c) Homogeneous data type
(c) attenuation in the glass (d) all of these
(d) Real data type
86. Which of the following is not true for a counter
98. The sensitivity of a Wheatstone bridge depends
instruction in PLC?
upon
(a) Up-counters are always reset to zero
(a) galvanometer current sensitivity
(b) The counter will operate on the trailing edge
(b) galvanometer resistance
(c) A separate coil is used for reset
(c) bridge supply voltage
(d) All of these
87. Which of the following is not a negative (d) all of the above
resistance device? 99. Despite the presence of negative feedback,
(a) Gunn diode (b) Tunnel diode control system still have problems of instability
(c) IMPATT diode (d) Varactor diode because of
88. Which statement is false about micro-strip line (a) Components used have non-linearities
over strip-line? (b) Dynamic equations of the subsystems are not
(a) Less ratiative known exactly
(b) Easier for component integration (c) Mathematical analysis involves approximations
(c) One sided ground plane (d) System has large negative phase angle at high
(d) More interaction with neighboring circuit element frequencies
89. The ROM chips are mainly used to store 100. If the gain the open-loop system is doubled, the
(a) System files (b) Root directories gain margin
(c) Boot files (d) Driver files (a) is not affected
90. Mark the incorrect Boolean expression : (b) gets doubled
(a) 1 + A = A' (b) 1 + A = 1 (c) becomes half
(c) A + A = 1 (d) A + AB = A (d) becomes one fourth
Solution
1. (d) 4. (b) Hexadecimal Number = 3B7F
Given that, 3 = 0011
n i = 1.5 × 1010 / cm3 B = 1011
7 = 0111
ND = 1017/cm3
F = 1111
According to mass-action law-
(3B7F)16 = (0011101101111111)2
n i2 (1.5 ×10 )
10 2
2.25 × 1020 5. (b)
p= = =
ND 1017
1017 SMPS (Switch Mode Power supply) normally use ferrite
core transformers in place of Iron core because of lower
p = 2.25×103/cm3
core loss. Ferrite have high resistivity so low eddy
current loss hence, lower core loss.
2. (d) 6. (d)
For positive half cycle A power semiconductor device is a semiconductor
Vin Diode Vout device used as a switch or rectifier in power electronics.
MOSFET is a semiconductor power device but NOT a
0 − 4V ON 4V
current triggered device. In MOSFET the flow of
4V − 16V OFF 16V current from source to drain is controlled by input
voltage.
For negative half cycle
Hence it is a voltage controlled device.
Vin Diode Vout 7. (d)
0 − 16V ON 4V Closed loop control system-the closed loop system is
given below.
25. (d)
s
K-map or karnaugh map with 4-variable has 24 cells Circuit in s-domain-
24 = 16 Cells
26. (b) POS form of a Boolean expression is suitable for
circuit implementation using NOR Gate. NOR Gate is
the type of Universal Gate.
27. (b)
An SCR combines the features of a rectifier and
1
transistor. It consists of two diodes connected back-to- I(s) =
s
back with a gate connection. It is widely used as a
switching device in power control applications. i(t) = u(t)
28. (d) i (t) = 1 when t > 0
Two transistor analogy of SCR combination of n-p-n 1
Energy supplied by source ( E ) = L i(t)
2
and p-n-p transistor SCR is a three terminal device 2
anode, cathode and gate terminal. 1
E = × 1× 12 joule
2
1
E= J
2
33. (d)
Lapacian of a scalar function V is divergence of the
gradient of the gradient of V.
29. (b)Steady state error for type zero system is given ∇2 V = ∇.(∇V)
1 34. (a)
by ess =
1+ kP S / Ni
Noise figure (F) = i
A = magnitude of step signal S0 / N 0
kp = lim G ( s ) H ( s ) Reciprocal of figure of merit is known as noise figure.
s →0
Y (s) =
( s + 2 )( s + 4 ) (c) two I/O devices
s ( s + 1)( s + 3 ) (d) cache and main memories
14. The main advantage of PCM is
Poles: s = 0, − 1, −3 Poles: s = − 2, −4
(a) (b) (a) Less bandwidth
Zeros : s = −2, −4 Zeros : s = 0, −1, −3
(b) Less power
Poles: s = 2,4 Poles: s = 0, 1, 3 (c) Better performance in presence of noise
(c) (d)
Zeros : s = 0, 1, 3 Zeros : s = 2, 4 (d) Possibility of multiplexing
8. The discrete LTI system is represented by 15. The EMF equation e = Nωrφsinωrt is applicable
n
1 to
impulse response h(n) = u(n) , then the
2 (a) AC systems with time variant field flux
system is (b) DC systems with time variant field flux
(a) Causal and stable (c) both AC and DC systems with time invariant
(b) Causal and unstable field flux
(c) Non causal and stable (d) both AC and DC systems with time variant
(d) Non causal and unstable field flux
Practice Set-9 117 YCT
16. Dielectric breakdown occurs when _____. 22. A transistor has hfe = 50, its hfc will be
(a) Dielectric physically breaks down (a) –50 (b) +50
(b) It attains high resistivity (c) –51 (d) +51
(c) It starts conducting 23. An AC current of 5 A and DC current of 5A
(d) It comes in contact with another potential flow simultaneously through a circuit. Which
dielectric of the following statements is true?
π (a) An AC ammeter will read less than 10 A but
∫
2
17. Evaluate sin xdx : more than 5A
0
Solution
1. (c) 6. (b)
Hall Effect-When a current carrying specimen (metal SCR (Silicon Controlled Rectifier) is a four layer solid
or semiconductor) is placed in a transverse magnetic state current controlling device. The gate current
field then an electric field is a Introduced in the required to turn on an SCR is few milliamperes.
direction perpendicular to both, current an magnetic 7. (a)
field, this effect is known as hall effect.
Given,
• Quantities that can be measured using hall effect.
(a) Whether the given specimen in metal or Y (s) =
( s + 2 )( s + 4 )
semiconductor. s ( s + 1)( s + 3 )
(b) To measure carrier concentration.
Poles are the roots of denominator of given transfer
(c) Mobility of charge carrier.
(d) Magnetic flux density. function by making denominator = 0
(e) To design hall effect transducer. s ( s + 1)( s + 3) = 0
(f) To measure the signal power in the electromagnetic So, poles: s = 0, –1,–3
wave.
Zeros are the roots of numerator of given transfer
(g) Type of semiconductor (p-type or n-type)
function by making numerator = 0
( s + 2 )( s + 4 ) = 0
So, zeros: s =–2, –4
8. (a)
2. (a) Given that
Gun diode are fabricated from a single piece of n-type n
semiconductor, the most common material are gallium 1
Impulse response h(n) = u(n)
Arsenide, (GaAs) and Indium Phosphide, (InP). 2
However other materials including Ge, CdTe, InAs, In 1 for n ≥ 0
Sb and others have been used. ∵ u (n) =
0 for n < 0
3. (d)
The process of utilizing one data link for transmission So h(n) = 0 for n < 0
of a group of variable is known as multiplexing. i.e. h(n) is right sided system.
4. (d) Hence h((n) causal system.
BCD code is used to represent a decimal number to a • For stability -
binary number, in BCD code each number is expressed ∞
41. (c)
• Total number of NAND gates required to construct
Total events, n(s) = 16
Successive events, n(A) = 4 half adder ⇒ 5
probability of getting three times head, Truth table of Half adder -
n(A) 4 Inputs Outputs
P= =
n(S) 16 A B Sum ( S ) Carry ( C )
P = 0.25 0 0 0 0
42. (b) 0 1 1 0
Circular waveguide is a circular cross section. The
lowest order propagation mode is TE11 for minimum 1 0 1 0
degradation of signals. 1 1 0 1
α
β=
1− α
Other form, =
β
α=
1+ β
γ = 1+ β Hence output will be triangular pulse of duration 2T .
64. (b) 70. (c)
Colpitts oscillator- LC oscillator colpitt’s oscillator n(n − 1)
Number of node pair voltage =
uses two capacitors C1 and C2 placed across a common 2
inductor L and the centre of the two capacitors is 10 × 9
= = 45
tapped. 2
Phase shift oscillator- RC oscillator a RC phase shift ω 1
oscillator gives 180º phase shift at output. 71. (b) VP = =
β LC
Tunnel diode oscillator-Negative resistance
oscillator. β = ω LC
Relaxation oscillator - sweep circuits. 72. (a)
65. (a) Total power required for transmission of AM-
The rise time of Low pass RC circuit is given by
Pt = PC 1 + µ
2
τ = 2.2 RC 2
Practice Set-9 128 YCT
If antenna resistance is R. We will get -
Pt = I 2t R Y = (A(B + C) + D)
2
PC = I R
C
Note - For NMOS parallel →OR
Series → AND
µ2
I 2t R = IC2 R 1 + and PMOS vice-versa.
2
81. (a)
µ2 Given, Number of bits (n) = 10
I t = IC 1 + Vfs = 10.23 V
2
V
73. (c) Resolution = n fs
2 −1
For a FM receiver, maximum frequency used 15kHz.
10.23
74. (c) = 10
2 −1
A Geostationary satellite located at about 35000 km
10.23
from earth so that it can cover one side of the earth =
because 3 satellite cover whole earth and 360º of the 1023
earth. = 10 mV
75. (a) 82. (a)
1
MOV count 100H; Given Γ =
It is a 16-bit instruction i.e. immediate move to 5
memory, so it is an immediate addressing mode. 1+ Γ
∵ VSWR =
Direct addressing mode is said that the data is given as 1− Γ
operand. 1
1+
Example - MOV A, 24H, whatever data is stored in ∴ VSWR = 5
24H is moved to accumulator. 1
1−
So, it is an example of direct, immediate addressing 5
mode. 6 3
= =
76. (b) 4 2
Zinc sulphide is a ceramic material. 83. (b)
77. (a) Given that-
The cavity magnetron is a high-power vacuum tube that BW = 4kHz
generates microwave. In cavity magnetron, strapping is SNR = 15
used to prevent mode jumping.
S
78. (c) Channel capacity (C) = BW log2 1 +
N
In a sinusoidal oscillator, sustained oscillations will be
(C) = 4 ×103 log2 (1+15)
produced only if the loop gain (at the oscillation
frequency) is unity. (C) = 4×103 log2(2)4
(C) = 16 ×103 ×1
Barkhausen criteria for oscillation
(C) = 16 kbps
i) Aβ = 1
84. (b)
ii) ∠Aβ = 0º or 360º Prefix code are always decodable.
79. (a) Prefix codes are also known as prefix-free code,
Quartz is a piezo-electric material. It is a hard prefix condition codes and instantaneous codes.
crystalline mineral composed of silica. Kraft inequality it characterize the set of code word
lengths that are possible in a uniquely decodable
The atoms are linked in a continuous framework of
code.
SiO2. All prefix codes follow kraft’s inequality.
80. (a) 85. (a)
From the above circuit:- Given -
B and C are OR input so output = (B + C) Critical angle (θc) = 30º
together Numerical aperture (NA) = sinθc
(B + C) is AND with A = sin 30º
A (B+ C) is OR with D 1
So, N MOS Act as invertor, = = 0.5
2
Practice Set-9 129 YCT
86. (a) 64 K bytes is an external memory chip that 94. (c)
interfaces with 8051 as 8051 uses 16-bit address for In TV 4 : 3 represent the aspect ratio. The aspect ratio is
memory access. The 8051 has a maximum of 256 bytes the ratio between the width and the height of display, it
of internal data memory, this memory consists of four defines it's overall shape.
register banks 16-bytes of bit- addressable memory, 95. (c)
stack and variable memory. A computer keyboard is an input device that allows a
87. (c) person to enter letters, numbers and other symbols
A tunnel diode (also known as a Esaki diode) is a type (These are called characters in a key board) into a
of semiconductor diode that has effectively "negative computer.
resistance" due to the quantum mechanical effect called 96. (b)
tunneling. Tunnel diodes have a heavily doped pn- Series resonant circuit
junction that is about 10 nm wide. 1
ωr =
LC
ωL
Quality factor (Q) = r
R
97. (c)
The Ethernet protocol uses CSMA/CD. Carrier-sense
multiple access with collision detection (CSMA/CD) is
a media access control (MAC) method used most
88. (c)
notably in early Ethernet technology for local area
A probe projecting into wave guide or cavity resonator.
networking. It uses carrier-sensing to defer
Designed to transfer energy from an external circuit.
transmissions until no other stations are transmitting.
89. (a)
98. (c) Given that -
RAM to construct
Number of chip = Z1 = 200∠30°Ω
RAM capacity
Z2 = 250∠–40°Ω
2048 Z3 = 150∠0°Ω
n=
1024 Z4 = ?
n=2 At balance condition -
90. (b) In case of staircase, when both switch are Z1Z4 = Z2Z3
different position, then bulb will ON. And it is the Z Z 250∠ − 40°× 150∠0°
Z4 = 2 3 =
example of EX-OR Gate, Y = A ⊕ B Z1 200∠30°
Y = AB + AB Z4 = 187.5∠ − 70°Ω
91. (a)
Number of bits per symbol = log 2 M 99. (a)
For tachometer y(t) = e (t) and x (t) = θ (t)
= log216
dθ ( t )
= log2 24 e(t) ∝
=4 dt
92. (c) Gaussian minimum shift keying [GMSK]- E (s) = K ⋅ s θ(s)
• The technology behind the global system for mobile E (s )
communication (GSM) uses Gaussian minimum shift = K ⋅s
keying (GMSK) modulation a variant of phase shift θ (s )
keying (PSK) with time division multiple T (s ) = K ⋅ s
Access(TDMA) signaling over frequency division
100. (b) A system is said to be marginally stable if the
duplex (FDD) carriers.
gain cross over frequency is equal to phase cross over
• GMSK is a form of modulation based on frequency frequency.
shift keying that has no phase discontinuities and
provides efficient use of spectrum as well as enabling ωgc = ωpc
high-efficiency radio power amplifiers.
93. (b)
( )
Gain cross over frequency ωgc is the frequency where
The working of an optical fiber is bases on total internal gain of the system is 1.
reflection. Use of optical fiber light signals can be Phase cross over frequency ( ωpc ) is the frequency
transmitted from one place to another place without loss
where phase of the system is –180º.
of energy.
Solution
1. (b) At T = 300K, donor energy level is closed to the
For p-type semiconductor. conduction band.
N
E C − E fn = kT ℓn C
ND
p
ND
N
E fP − Ev = kTℓn V
NA NA
• At T = 0ºk
EfP – EV = 0 • For P-type semiconductor at room temperature,
E fP = E V Acceptor energy level is close to the valence band.
2. (d)
So, fermi level is very closed to valence band.
As D2 anode has more potential, it will ON first and D1
(b) Intrinsic semiconductor-
the become OFF.
E C + E V kT N C
Ef = − ℓn 3. (a)
2 2 NV Non uniform quantization-
at T = 0ºk → The maximum Quantization error is given by
E + EV ∆
Efi = C
2
−0 [ Qe ]max = , ∆ = Stepsize
2
EC + EV Vmax − Vmin
Ef i = Step size (∆) =
2 2n
Here → n is the number of bits per sample.
• Non uniform quantization is used for improvement is
fi
signal-to-noise ratio (SNR) and reduce quantization noise.
4. (c)
Hamming code is useful for both detection and
• Fermi level is half way between the valence band and correction of error present in the received data .
the conduction band. This code uses multiple parity bits and we have to place
(c) n-type semiconductor at room temperature these parity bit in the position of powers of 2.
5. (a)
ND
String efficiency =
Total string voltage / current rating ( x ya 3
x − x 2 y 2 a y − x 2 yza z )
individual voltage / current
n × ∂ 3 ∂ ∂
rating of one SCR = x y − x 2 y 2 − x 2 yz
∂x ∂y ∂z
where, n No. of SCR
Derating factor = 1 – string efficiency = 3x 2 y − 2x 2 y − x 2 y = 0