ECE 214

Lecture – 14 Date: 28.03.2025

• MOSFET Small Signal Operation

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET as Amplifier

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MOSFET – Small Signal Operation ECE 214
Small signal 𝑣𝑔𝑠 is superimposed upon the dc 𝑉𝐺𝑆 .
Therefore net 𝑣𝐺𝑆 = 𝑉𝐺𝑆 + 𝑣𝑔𝑠 .
.
For small signal amplification, we need to insure that the
NMOS is operating in the saturation region.
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𝑖𝐷 = 𝑘𝑛 (𝑣𝐺𝑆 − 𝑉𝑇 )2 . Saturation
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𝑖𝐷 = 𝑘𝑛 (𝑉𝐺𝑆 + 𝑣𝑔𝑠 − 𝑉𝑇 )2
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𝑖𝐷 = 2 𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑇 )2 + 𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑇 ) 𝑣𝑔𝑠 + 2 𝑘𝑛 𝑣𝑔𝑠
2

DC term Nonlinear
Linear Term
Distortion
To minimize distortion 1
𝑘 𝑣 2 <<
2 𝑛 𝑔𝑠
𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑇 ) 𝑣𝑔𝑠

𝑣𝑔𝑠 << 2(𝑉𝐺𝑆 − 𝑉𝑇 )

Above is the criteria for small signal assumptions

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MOSFET – Small Signal Operation

Under the small signal assumption

𝑣𝑔𝑠 << 2(𝑉𝐺𝑆 − 𝑉𝑇 )
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𝑖𝐷 ≈ 2 𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑇 )2 + 𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑇 ) 𝑣𝑔𝑠

𝑖𝐷 ≈ 𝐼𝐷 + 𝑖𝑑 where 𝑖𝑑 = 𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑇 ) 𝑣𝑔𝑠

transconductance; 𝒈𝒎 is denoted by:

𝑖𝑑
𝑔𝑚 ≡ = 𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑇 )
𝑣𝑔𝑠

𝜕𝑖𝑑
𝑔𝑚 = ቤ
𝜕𝑣𝐺𝑆 𝑣
𝐺𝑆 = 𝑉𝐺𝑆

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MOSFET – Small Signal Operation ECE 214

𝑣𝐷𝑆 = 𝑉𝐷𝐷 − 𝑅𝐷 𝑖𝐷 𝑖𝐷 ≈ 𝐼𝐷 + 𝑖𝑑
Voltage Gain
𝑣𝐷𝑆 = 𝑉𝐷𝐷 − 𝑅𝐷 (𝐼𝐷 +𝑖𝑑 )
𝑣𝐷𝑆 = 𝑉𝐷𝐷 − 𝑅𝐷 𝐼𝐷 − 𝑅𝐷 𝑖𝑑
𝑣𝐷𝑆 = 𝑉𝐷𝑆 + 𝑣𝑑𝑠 AC small signal component of the output

𝑣𝑑𝑠 = − 𝑅𝐷 𝑖𝑑 =-𝑔𝑚 𝑣𝑔𝑠 𝑅𝐷

𝑣𝑑𝑠 = − 𝑔𝑚 𝑣𝑔𝑠 𝑅𝐷
Voltage Gain 𝑨𝒗 is given by :
𝑣
𝐴𝑣 ≡ 𝑣𝑑𝑠=− 𝑔𝑚 𝑅𝐷 𝐴𝑣 ≡ − 𝑔𝑚 𝑅𝐷
𝑔𝑠

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MOSFET – Small Signal Operation ECE 214
MOSFET – Small Signal Operation ECE 214
• To determine the small-signal performance of a given MOSFET amplifier
circuit, we can replace it with its small-signal model.

with channel length

modulation

• Recall that due to channel-length modulation, the MOSFET drain current is

slightly dependent on 𝑣𝐷𝑆 and thus is more accurately described as:
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MOSFET – Small Signal Operation ECE 214

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MOSFET – Small Signal Operation ECE 214

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MOSFET – Small Signal Operation ECE 214
Step 1: Complete a D.C. Analysis (contd.)
• The goal of this DC analysis is to determine:

Once you have found these values, you can CHECK your saturation
assumption, and then move on to step 2.

Step 3: Carefully replace all MOSFETs with their small-signal circuit model.

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MOSFET – Small Signal Operation ECE 214

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MOSFET – Small Signal Operation ECE 214

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Example – 1 ECE 214

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Example – 1 (contd.) ECE 214

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Example – 1 (contd.) ECE 214

Step 2: Determine the small-signal parameters

gm = 2K (VGS −Vt ) • 𝒓𝒐= ∞.
= 2(0.25)(4.0 −2.0)
= 1 mAV

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Example – 1 (contd.) ECE 214

Step 5: Analyze the small-signal circuit

• The analysis of this small-signal circuit is fairly
straightforward. First, we note from KVL that:
vgs =vi
• and that: id = gm vgs • and that from Ohm’s Law: vo = −5id
= 1.0vgs
=v gs
• Combining these equations, we find that: vo = −5vi

• And thus the small-signal open- vo (t )

Avo = = −5.0
circuit voltage gain of this amplifier is: vi (t )

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