Small Signal Analysis Of MOSFET

Amplifier

Dr R Malmathanraj
[email protected]
MOSFET Basics

MOSFET stands for Metal-Oxide-

Semiconductor Field-Effect Transistor.

It consists of a gate, source, drain, and a

channel under the gate.

The MOSFET operates in three regions:

cutoff, triode, and saturation.

2
 Add in capacitances
Overlap of Overlap of
Gate Oxide Gate Oxide

LD LD
Gate to
channel to
Bulk
capacitance

Reverse Bias Junction capacitances

 Complete Model of a MOSFET
Due to effective
Overlap of 
g mb = g m
modulation of the
Gate Oxide threshold voltage.
2 VSB + 2 F

Overlap of
Gate Oxide Gate to
and source channel to
Bulk Reverse Bias Junction capacitances
capacitance
Common Source Amplifier

The common source amplifier is a popular

MOSFET amplifier configuration.

It provides high voltage gain and medium

input and output impedance.

The small signal analysis of the common

source amplifier involves determining the
small signal voltage gain and input/output
impedance.

4
Input Impedance

The input impedance of a common source

amplifier is the ratio of the change in input
voltage to the change in input current.

It depends on the small signal resistance in

the amplifier circuit and the
transconductance of the MOSFET.

The input impedance can be calculated

using the small signal equivalent circuit.

7
Output Impedance

The output impedance of a common source

amplifier is the ratio of the change in
output voltage to the change in output
current.

It depends on the load resistance, the small

signal resistance in the amplifier circuit,
and the output conductance of the
MOSFET.

The output impedance can be calculated

using the small signal equivalent circuit.

8
Common Gate and Common Drain Amplifiers

Besides the common source amplifier,

there are other MOSFET amplifier
configurations: common gate and common
drain.

The common gate amplifier provides high

input impedance and low output
impedance.

The common drain amplifier provides low

input impedance and high output
impedance.

9
Frequency Response

The frequency response of a MOSFET

amplifier refers to how the gain and
impedance characteristics vary with
frequency.

It is important to consider the frequency

response to ensure proper operation of the
amplifier across a range of frequencies.

The frequency response can be analyzed

using small signal analysis techniques.

11
Gain-Bandwidth Product

The gain-bandwidth product is a key

parameter that determines the frequency
response of a MOSFET amplifier.

It is the product of the voltage gain and the

bandwidth of the amplifier.

The gain-bandwidth product sets an upper

limit on the frequency at which the
amplifier can provide significant gain.

12
Stability Analysis

Stability analysis is crucial to ensure that

the MOSFET amplifier does not oscillate or
become unstable.

It involves analyzing the phase and gain

margins of the amplifier.

Stability can be improved by including

appropriate compensation techniques.

13
Noise Analysis

Noise analysis is important in MOSFET

amplifiers as it determines the signal-to-
noise ratio.

It involves analyzing the noise sources in

the amplifier circuit and calculating their
contribution to the output noise.

Techniques such as noise figure and noise

factor are used to quantify the noise
performance of the amplifier.

14
Design Considerations

Various design considerations need to be

taken into account during the small signal
analysis of a MOSFET amplifier.

These include choosing appropriate biasing

conditions, selecting suitable values for
resistors and capacitors, and ensuring
stability and desired gain characteristics.

Simulation tools and optimization

techniques can aid in the design process.

15
Example Application: Audio Amplifier

MOSFET amplifiers find extensive use in

audio amplification applications.

Small signal analysis helps in designing

audio amplifiers with desired gain,
impedance, and frequency response
characteristics.

The analysis allows for optimization of the

amplifier circuit to achieve high fidelity
audio reproduction.

16
Advantages of MOSFET Amplifiers

MOSFET amplifiers offer numerous

advantages, including high input
impedance, low output impedance, and low
power consumption.

They can operate in single-ended or

differential configurations.

MOSFET amplifiers can be easily

integrated into integrated circuits, making
them suitable for various applications.

17
Limitations of MOSFET Amplifiers

Despite their advantages, MOSFET

amplifiers have certain limitations.

They are prone to temperature variations

and require appropriate biasing and
thermal considerations.

MOSFET amplifiers may also be sensitive

to variations in supply voltage and process
variations.

18
Small Signal Analysis Procedure

The small signal analysis procedure

involves the following steps:

Replace the MOSFET with its small signal

equivalent circuit.

Identify the small signal resistances and

capacitances.

10
Introduction to Small Signal Analysis of MOSFET
Amplifier

1
Small Signal Analysis

Analysing and ignoring non linear behaviour of the transistor and looking at the
variations in the voltage / current values from the bias conditions.

Example How microphone amplifier responds to a small audio signal.

A small signal model replicates the transistor in the circuit for a small signal
analysis.

Independent sources are set to zero for small signal analysis.

Introduction to Small Signal Analysis of MOSFET
Amplifier

Small signal analysis is a technique used to analyze the behavior of electronic circuits
under small variations in input signals.

MOSFET amplifiers are widely used in various applications due to their high input
impedance and low output impedance.

In small signal analysis, we assume that the variations in the signals are small enough to
linearize the circuit equations.

1
 Small Signal Equivalent Circuit

Cut off

Triode

Active
 MOSFET Small Signal Model and Analysis

[ [ [
[[ [
IGS
IDS =
y11
y21
y12
y22
VGS
VDS yij =
I j
V i VGS ,Q , VDS ,Q
IGS=y11VGS + y12VDS
IDS=y21VGS + y22VDS Derivative of current-voltage equation
evaluated at the Quiescent Point

MOSFET Amplifiers are biased into Saturation (or Active Mode)

I
DS
=
Kn
(V GS
−V
TN
)2
(1 +  V
DS
) for V
DS
V
GS
−V
TN
2
1.) Input Conductance
IGS IGS
IGS = 0  = 0 and =0  y11 = 0 and y12 = 0
VGS VDS
2.) Output Conductance
IDS  Kn
= y 22 = (VGS − VT )2
V DS 2
3.) Transconductance
IDS
= y 21 = K n (VGS − VT )(1 +  V DS )
VGS
 MOSFET Small Signal Model and Analysis
Compare with BJT

There is a large amount of symmetry between the MOSFET and the BJT

MOSFET BJT
Each of these
 Kn IC
y 22 = g o = (VGS − VT )2 = I DS parameters y 22 =
2 1
+ VDS V A + VCE
act in the
 same manner

IC
y 21 = g m = K n (VGS − VT )(1 +  V DS ) =
I DS
y 21 =
 VGS − VTN  VT
 
 2 
Putting the mathematical model into a small signal equivalent circuit

Compare this to the BJT small signal equivalent circuit

Small Signal Model of MOSFET

The small signal model of a MOSFET is a

linearized representation used for small
signal analysis.

It replaces the MOSFET with small signal

equivalent resistances and capacitances.

The small signal model helps in simplifying

the analysis of the amplifier circuit.

3
 Small Signal Equivalent Circuit of Common Source
Amplifier
The small signal equivalent circuit of the common source amplifier consists of small signal
resistances and capacitances.

It includes the small signal equivalent resistance of the MOSFET channel, the small signal
resistance due to the source resistor, and the small signal capacitance due to the gate-
source and drain-source capacitances.

The small signal equivalent circuit simplifies the analysis of the common source amplifier.

5
Small Signal Voltage Gain

The small signal voltage gain of a common

source amplifier is given by the ratio of the
change in output voltage to the change in
input voltage.

It depends on the load resistance, the

transconductance of the MOSFET, and the
small signal resistance in the amplifier
circuit.

The voltage gain can be calculated using

the small signal equivalent circuit.

6
 MOSFET: Small-Signal Equivalent Circuit
Y admittance
• From signal point of view, matrix
𝒊𝟏 𝟎 𝟎 𝒗𝟏
=
MOSFET behaves as voltage- 𝒊𝟐 𝒈𝒎 𝟎 𝒗𝟐
controlled current source.
– Accepts 𝑣𝑔𝑠 between 𝐴𝑣 = −𝑅𝐷 𝑔𝑚
gate and source
– Provides current 𝑖𝑑 at
drain
– Input resistance is high
𝐴𝑣 = − 𝑅𝐷 ∥ 𝑟𝑜 𝑔𝑚
– Output resistance is high
Small-signal models for the MOSFET: (a)
neglecting the dependence of iD on vDS in
saturation (the channel-length
modulation effect)
and (b) including the effect of channel
length modulation
ENEE 303 Fall 2017
 MOSFET: Small Signal Equivalent Circuit Models

p - Model T - Model
Transconductance Output Resistance

Same formula for PMOS except use |VOV |, |Vt|, ||

ENEE 303 Fall 2017

 MOSFET: Small-Signal Equivalent Circuit
Summary
The small signal approximation:

𝑣𝐷𝑆 = 𝑉𝐷𝐷 − 𝑅𝐷 𝐼𝐷 − 𝑅𝐷 𝑖𝑑

𝑖𝐷 = 𝐼𝐷 + 𝑔𝑚 𝑣𝑔𝑠

DC bias AC signal

• DC bias: Set the signal to zero

to obtain the quiescent point.
• AC signal: Set the DC bias
voltages and currents and
analyze the response of the
circuit to the signal. Use the
small-signal equivalent circuit. 𝐴𝑣 = − 𝑅𝐷 ∥ 𝑟𝑜 𝑔𝑚
ENEE 303 Fall 2017
 Example : MOSFET Amplifier
Given: Vt = 1.5 V, kn = 0.25 mA/V2 , VA = 50 V
Find: small-signal voltage gain, input resistance, largest allowable input signal(remain in
saturation region)

ENEE 303 Fall 2017

 Example : MOSFET Amplifier
Given: Vt = 1.5 V, kn = 0.25 mA/V2 , VA = 50 V
Find: small-signal voltage gain, input resistance, largest allowable input signal

ENEE 303 Fall 2017

 Example : MOSFET Amplifier
Given: Vt = 1.5 V, kn = 0.25 mA/V2 , VA = 50 V
Find: small-signal voltage gain, input resistance, largest allowable input signal

ENEE 303 Fall 2017

 Example : MOSFET Amplifier
Given: Vt = 1.5 V, kn = 0.25 mA/V2 , VA = 50 V
Find: small-signal voltage gain, input resistance, largest allowable input signal

The largest allowable input signal is constrained by,

ENEE 303 Fall 2017

 Small Signal Operation and Models: BJT
Define the BJT transconductance 𝑔𝑚 as,

𝑣𝑏𝑒 𝐼𝐶
𝑔𝑚 ≡ =
𝑖𝑐 𝑉𝑇

The BJT transconductance is the

slope of the input characteristic
𝑖𝐶 𝑣𝑠. 𝑣𝐵𝐸
𝜕𝑖𝐶
𝑔𝑚 = ቤ
𝜕𝑣𝐵𝐸 𝑣
𝐵𝐸 =𝑉𝐵𝐸

𝑖𝐷 = 𝐼𝑆 𝑒 𝑣𝐵𝐸 Τ𝑉𝑇

𝐼𝑆 𝑒 𝑉𝐵𝐸 Τ𝑉𝑇 𝐼𝐶
𝑔𝑚 = =
𝑉𝑇 𝑉𝑇

ENEE 303 Fall 2017

 Small Signal Operation and Models: BJT
The total base current,

𝑖𝐶 𝐼𝐶 1 𝐼𝐶
𝑖𝐵 = ≅ + 𝑣
𝛽 𝛽 𝛽 𝑉𝑇 𝑏𝑒

The signal current at the base is then,

1 𝐼𝐶 𝑔𝑚
𝑖𝑏 = 𝑣 = 𝑣
𝛽 𝑉𝑇 𝑏𝑒 𝛽 𝑏𝑒

The small signal input resistance 𝑟𝜋 between the base and

emitter, looking into the base, is defined as,

𝑣𝑏𝑒 𝛽 𝑉𝑇
𝑟𝜋 ≡ = =
𝑖𝑏 𝑔𝑚 𝐼𝐵
ENEE 303 Fall 2017
 BJT: Hybrid-𝝅 Equivalent Circuit

• From signal point of view,

BJT behaves as voltage-
controlled current source.
– Accepts 𝑣𝑏𝑒 between 𝐴𝑣 = −𝑅𝐶 𝑔𝑚
base and emitter
– Provides current 𝑖𝑐 at
the collector
– Input resistance is high
but finite 𝐴𝑣 = − 𝑅𝐶 ∥ 𝑟𝑜 𝑔𝑚
– Output resistance is high Small-signal models for the BJT: (a)
neglecting the dependence of iC on vCE
in saturation (the Early effect) and (b)
including the Early effect

ENEE 303 Fall 2017

 BJT: Hybrid-𝝅 Equivalent Circuit
Summary
The small signal approximation:

𝑣𝐶𝐸 = 𝑉𝐶𝐶 − 𝑅𝐶 𝐼𝐶 − 𝑅𝐶 𝑖𝑐

𝑖𝐶 = 𝐼𝐶 + 𝑔𝑚 𝑣𝑏𝑒

DC bias AC signal

• DC bias: Set the signal to zero

to obtain the quiescent point.
• AC signal: Set the DC bias
voltages and currents and
analyze the response of the
circuit to the signal. Use the
small-signal equivalent circuit. 𝐴𝑣 = − 𝑅𝐶 ∥ 𝑟𝑜 𝑔𝑚
ENEE 303 Fall 2017
 BJT: Hybrid-𝝅 Equivalent Circuit

ENEE 303 Fall 2017

 BJT: Hybrid-𝝅 Equivalent Circuit

ENEE 303 Fall 2017

 The Three Transistor Amplifier Configurations

ENEE 303 Fall 2017

 The Common-Source (CS) Amplifier Configuration
The input resistance is,

The output voltage is,

The output resistance is,

The overall voltage gain is,

ENEE 303 Fall 2017

 The CS Amplifier with Source Resistance
Input Resistance
𝑣𝑖 𝑣𝑖
𝑅𝑖 = = =∞
𝑖𝑖 0

Output Resistance
𝑣𝑜 𝑣𝑜
𝑅𝑜 = = = 𝑅𝐷
𝑖𝑜 𝑖

Open-Circuit Voltage Gain

𝑣𝑜 𝑔𝑚 𝑅𝐷
𝐴𝑣𝑜 = ቤ =−
𝑣𝑖 𝑅 1 + 𝑔𝑚 𝑅𝑆
𝐿 =∞

Amplifier and Overall Voltage Gain

𝑣𝑜 𝑔𝑚 𝑅𝐷 ∥ 𝑅𝐿
𝐴𝑣 = =− = 𝐺𝑣
𝑣𝑖 1 + 𝑔𝑚 𝑅𝑆

• 𝑅𝑆 reduces the amplifier gain

ENEE 303 Fall 2017

Pageg

粘
帆

em

嶋‥芋髑
 MOSFET Small Signal Model and Analysis
SPICE MOSFET Model
SPICE models the drain current ( IDS ) of an n-channel MOSFET using the
following parameters/equations (SPICE variables are shown in ALL
CAPPITAL LETTERS)

Cutoff: IDS = 0

Linear:
KP  W 
I DS = VDS 2(VGS − VTH )− VDS (1 + (LAMBDA)VDS )
2  LEFF 
Saturation:

I DS =
KP  W 
  
 (VGS − VTH )2 (1 + (LAMBDA)V DS )
2  LEFF 
Threshold Voltage:
VTH = VTO + GAMMA ( 2PHI − VBS − 2PHI )
Channel Length
LEFF=L-2LD
MOSFET Small Signal Model and Analysis

 Kn g m = K n (VGS − VT )(1 +  V DS )
go = (VGS − VT )2
2

Need to find VGS-VT

Kn
I DS =
2
 
(VGS − VTN )2 (1 +  V DS )

2 mA =
1 mA /V 2
2
 
(VGS − VTN )2 (1 + 0.015 (7.5) )
4
VGS − VTN = = 1.9V
1.11
 g m = 2.11 mS g o = 27.1  S  ro = 36.9k
 MOSFET Small Signal Model and Analysis
Example: Jaeger 13.94

v o vGS vo
Av = =
vs v s v GS

= −g m (ro R3)= −2.1mS (3.48k ) = −7.35

vGS 1Meg vo
= = 0.99 and Rd
vs 10k + 1Meg vGS

= −7.27 V /V 
v o vGS vo
 Av = =
vs v s vGS
 Summary

Small signal analysis is a crucial technique

for analyzing MOSFET amplifiers.

It helps in understanding the voltage gain,

input impedance, and output impedance of
the amplifier.

Small signal analysis aids in designing and

optimizing MOSFET amplifiers for desired
performance characteristics.

19