Semiconductor Diode
Applications
Semiconductor Diode Applications
• One fundamental application of diode is as a rectifier
(converts AC waves in to DC).
• To create diode logic gates (such as AND or OR gates).
• As a clipper that limits or clipped off the voltage
beyond the preset value without changing the remaining
part of the input waveform.
• As a clamper that shifts or alters either positive or
negative peak of input signal to desired level.
How to solve diode circuits
• There are different diode circuits such as:
✓ Series diode circuits
✓ Parallel diode circuits
✓ Series-parallel diode circuits
✓ Rectifier circuits
✓ Clipper and clamper circuits
✓ Etc.
• Circuit analyzing techniques:
✓ Exponential model (Load-line analysis)
✓ Ideal equivalent circuit (1st approximation)
✓ Simplified equivalent circuit (2nd approximation)
Exponential diode model
• Exponential diode model
– most accurate, the result found by this model is almost
similar to that obtained by Shockley's equation.
– most difficult to employ in circuit analysis
➢due to nonlinear nature
𝐼𝐷 = 𝐼𝑆 (𝑒 𝑉𝐷 /𝑛𝑉𝑇 − 1)
𝑉𝐷 = voltage across diode
𝐼𝐷 = current through diode
• We use load line (graphical method) to solve
exponential model.
Load-Line Analysis of Diode Circuits
dv di
We can use v = iR, i = C , v = L ,...
dt dt
𝑣𝐷
but when there is a diode :𝑖𝐷 = 𝐼𝑠 exp −1
𝑛𝑉𝑇
It is difficult to write KCL or KVL equations.
For the circuit shown,
KVL gives:
𝑉𝑆𝑆 = 𝑅𝑖𝐷 + 𝑣𝐷
If the I−V curve of Q-point
the diode is given,
IDQ
we can perform the
"Load−Line Analysis"
VDQ
The Q-point, which identifies ID and VD for a particular diode in a given circuit.
Load-Line Analysis of Diode Circuits
Example: For the series diode
configuration of figure (a) and
employing the diode characteristics
of figure (b), determine
i. 𝑉𝐷𝑄 and 𝐼𝐷𝑄
ii. 𝑉𝑅
Solution:
𝐸 10𝑉
𝐼𝐷 = ቤ𝑉𝐷 = 0 = = 20𝑚𝐴
𝑅 0.5𝑘Ω
𝑉𝐷 = 𝐸 ȁ𝐼𝐷 = 0 = 10𝑉
• From the result, plot the straight line across ID and
VD.
• The resulting load line appears in the right figure.
The Q points occurred at
• VDQ 0.78 V
IDQ 18.5mA
• VR=IRR=IDQR=(18.5 mA)(0.5k) =9.25 V
Ideal Equivalent Circuit
The diode is on state if;
▪ The current established by the applied sources is such that its direction
matches that of the arrow in the diode symbol.
Ideal Equivalent Circuit
Example: For the series diode
configuration of figure (a),
determine
i. 𝑉𝐷𝑄 and 𝐼𝐷𝑄
ii. 𝑉𝑅
Solution:
For a ideal diode model, IR
𝑉𝐷 = 0𝑉
Using equivalent circuit and KVL
𝑉𝑅 = 𝐸 − 𝑉𝐷 = 10𝑉 − 0𝑉 = 10𝑉
𝑉𝑅 10𝑉
𝐼𝐷 = 𝐼𝑅 = = = 20𝑚𝐴 Forward bias
𝑅 0.5𝐾Ω
Ideal Equivalent Circuit
Example: For the series diode
configuration of figure (a),
determine
i. 𝑉𝐷𝑄 and 𝐼𝐷𝑄
ii. 𝑉𝑅
Solution:
IR
For a ideal diode model, = 0A
𝐼𝐷 = 0𝐴
Using equivalent circuit and KVL
𝐸 − 𝑉𝐷 − 𝑉𝑅 = 0𝑉
Reversed bias
𝑉𝐷 = 𝐸 − 𝑉𝑅 = 10𝑉
Simplified Equivalent Circuit
The diode is on state if;
▪ The current established by the applied sources is such that its direction
matches that of the arrow in the diode symbol.
▪ VD ≥ 0.7 V for silicon, VD ≥ 0.3 V for germanium, and VD ≥ 1.2 V for
gallium arsenide.
Series Diode Configuration
Example: For the series diode
configuration of the following figure,
determine VD, VR and ID for forward
biasing
Solution:
For a simplified diode model,
𝑉𝐷 = 0.7𝑉
Using equivalent circuit and KVL
𝑉𝑅 = 𝐸 − 𝑉𝐷 = 8𝑉 − 0.7𝑉 = 7.3𝑉
𝑉𝑅 7.3𝑉
𝐼𝐷 = 𝐼𝑅 = = = 3.32𝑚𝐴
𝑅 2.2𝑘Ω
Series Diode Configuration
Example: Repeat previous
example with the diode reverse.
Thus the equivalent circuit is
Solution:
For a ideal diode model,
𝐼𝐷 = 0𝐴
𝑉𝑅 = 𝐼𝑅 𝑅 = 𝐼𝐷 𝑅 = 0𝑉
Using equivalent circuit and KVL
𝐸 − 𝑉𝐷 − 𝑉𝑅 = 0𝑉
𝑉𝐷 = 𝐸 − 𝑉𝑅 = 8𝑉 − 0𝑉 = 8𝑉
When to use these models?
• exponential model • ideal diode model
✓ low voltages ✓ high voltages >> 0.7V
✓ less complex circuits ✓ very complex circuits
✓ emphasis on accuracy over ✓ cases where a difference in
practicality voltage by 0.7V is
negligible
• Simplified model:
✓ medium voltages = 0.7V
✓ more complex circuits
✓ emphasis on practicality over
accuracy
Series Diode Configuration
If the diode is biased with the voltage source less than VD, the
diode also acting like open circuit
Diode Circuit Diode Characteristic Equivalent cct
With biasing less than
0.7V
Series Diode Configuration
Example: Determine Vo and ID for the series circuit below
Using equivalent circuit and KVL
Vo = E −V K1 −V K 2 = 12V − 0.7V −1.8V = 9.5V
VR 9.5V
ID = IR = = = 13.97mA
R 0.68kΩ
Series Diode Configuration
Example: Determine ID , VD2 and Vo for the circuit below
Since, open circuit,
ID = 0A
VD1 = 0V
V0 = IR R = ID R = 0 × R = 0V
And using KVL, we have
VD2 = E − VD1 - V0 =20V-0V-0V=20V
Parallel Diode Configuration
Example: Determine Vo, I1, ID1 and ID2 for the parallel diode below
Since the source voltage is greater than the diode then the current flow and
the voltage across diode is 0.7V, thus Vo = 0.7V
VR E−VD 10V−0.7V
The current is I1 = = = = 28.18mA.
R R 0.33kΩ
Since diodes are similar thus the current will be same, then
I1 28.18mA
ID1 = ID2 = = = 14.09mA
2 2
Series-Parallel Diode Configuration
Example: Determine the currents I1, I2 and ID for the network below
Since R1 is // D2 then voltage is same
𝑉𝐾2 0.7𝑉
𝐼1 = = = 0.212𝑚𝐴
𝑅1 3.3𝑘Ω
Applying KVL in loop 1
𝑉2 = 𝐸 − 𝑉𝐾1 − 𝑉𝐾2 = 20𝑉 − 0.7𝑉 − 0.7𝑉 = 18.6𝑉
𝑉2 18.6𝑉
Therefore, 𝐼2 = = = 3.32𝑚𝐴
𝑅2 5.6𝑘Ω
And 𝐼𝐷2 = 𝐼2 − 𝐼1 = 3.32𝑚𝐴 − 0.21𝑚𝐴 = 3.11𝑚𝐴
OR GATE
Example: Determine Vo and I for network below
Solution: Input
Output, Vo
From fig. on the right apply KVL V1 V2
10V 0 9.3V
Vo = E −V D = 10V − 0.7V = 9.3V
0 10V 9.3V
and
10V 10V 9.3V
E − VD1 10V − 0.7V
I= = = 9.3mA 0V 0V 0V
R 1KΩ
Truth table of OR gate
AND GATE
Example: Determine the output level for the positive logic AND gate
below
Input
Due to forward bias of D2 the output Output, Vo
E1 E2
voltage is Vo= 0.7V 10V 0 0.7V
From fig. on the right apply KVL 0 10V 0.7V
10V 10V 10V
𝐸 − 𝑉𝑘 10𝑉 − 0.7𝑉
𝐼= = = 9.3𝑚𝐴 0V 0V 0.7V
𝑅 1𝑘Ω
Truth table of AND gate
