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Lecture 2 Slides1 - Diode Approximation

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0% found this document useful (0 votes)
21 views20 pages

Lecture 2 Slides1 - Diode Approximation

Uploaded by

Twins Twin
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© © All Rights Reserved
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Electronic One

Lecture 2

Dr. Mohamed Shrud


Things to be covered

•Various Approximations to the Ideal Diode Equation.


• Load line analysis
Various Approximations to
the Ideal Diode Equation

• (b) Ideal diode approximation.

• (c) Forward voltage drop approximation [Si=0.7 and Ge=0.3]

• (d) Forward voltage drop approximation Including diode

ohmic resistance.
Ideal diode approximation Diode ON (short circuit):
VD = 0 for all positive ID

VD VD = 0 V

ID ID
E R VR forward bias diode E R VR

Diode OFF (open circuit):


ID = 0 for all negative VD

VD VD = E

ID ID = 0 A
E R VR Reverse bias diode E R VR
Ideal diode approximation V-I curve (characteristic curve)

ID
Short Forward
circuit bias diode

0V VD = 0 V

ID
ID

0 VD
Reverse Open
bias diode circuit

ID = 0 A
ID = 0
Ideal diode approximation Example

Determine the voltage VR across the resistor and the current ID through the resistor
for two values of the input voltage, E = 3 V and E = −5 V, and given that R = 500Ω

VR VR
ID = E / R
R=500Ω ID R=500Ω ID 3/500 =
E= 3V VD E= 3V mA 6 =
and -5V VD
VR = I D × R
E/R × R =
3V=

VR ID
6 mA
ID ID = 0
R=500Ω
E= -5 V VD
And -5V 0 VD

VR = 0
Forward voltage drop approximation
[Si ≈ 0.7V and Ge ≈ 0.3V]

VD

ID ID
Si 0.7V
E R VR Forward bias diode R VR

VD

ID Si ID
E R VR Reverse bias diode
E R VR
Forward voltage drop approximation V-I curve (characteristic curve)
[Si ≈ 0.7V and Ge ≈ 0.3V]

ID Forward
(mA) bias diode

ID 0.7V

0 0.7V 1V VD (V)
High resistance Low resistance

ID = 0 A
region region

ID = 0
Reverse Knee
bias diode region
Forward voltage drop approximation
[Si ≈ 0.7 V and Ge ≈ 0.3V]
Example

Calculate the current through the diode in the circuit shown


A. The voltage drop across the diode is known.
It is 0.7 V for silicon.
ID
R 1K VR VD = 0.7V
VS B. Find the voltage drop across the resistor.
5V
This can be calculated using KVL
0.7VSi VD VR = Vs − VD = 5 V − 0.7 V = 4.3V

C. Calculate the current through the resistor

I = VR / R = 4.3/1kΩ = 4.3mA

.D. Finally, determine the current through the diode

4.3 mA (In a series circuit the same current runs through each component.)
Forward voltage drop approximation
[Si ≈ 0.7 V and Ge ≈ 0.3V]
Example

Calculate the current through the silicon diode

R1 43 Ω
IT
VS = 5V

I2 ID

R2 70Ω Si
0.7V VD

I2 = VD /R2= 0.7V/70Ω= 0.01A =10mA

VR = VS − VD = 5V − 0.7V = 4.3V [ KVL ]

IT = VR/R1= 4.3V/43Ω= 0.1A =100mA

ID = IT − I2 = 100 mA −10 mA = 90 mA [ KCL ]


Example

,Calculate the current through the diode shown in figure using

(A)- Ideal diode

(B)- Forward voltage drop

VD =--------------------------VR
R
VR
= Vs − VD =---------------
1K Ω
I = VR/R=------------------
VS = 10V
ID ID =---------------------------

VD
A. 0 V ; 10 V ; 10 mA ; 10 mA
B. 0.7 V; 9.3 V; 9.3 mA; 9.3 mA
The breakdown voltage is often called
the peak inverse voltage (PI V)
Example or the peak reverse voltage( PRV.)

The diode in the circuit shown is known to break down at 100V,


and it can safely pass 1 A without overheating. Find the
resistance in this circuit that would limit the current to 1 A.

DIODE PIV
PIVs of some
Common diodes
R VR 1N4001 50 V
1N4002 100 V
VS = 200V
100V 1N4003 200 V
1N4004 400 V
1N4005 600 V

VR = Vs − VD = 200V − 100V = 100V

Since 1 ampere of current is flowing, then:

R = VR / I = 100V / 1A = 100 ohms


Forward voltage drop approximation
Including diode ohmic resistance
[Si ≈ 0.7V and Ge ≈ 0.3V]

VD

ID
Si
E R VR Forward bias diode
Forward voltage drop approximation
Including diode ohmic resistance
V-I curve (characteristic curve)
[Si ≈ 0.7V and Ge ≈ 0.3V]

ID Forward
bias diode
(mA)

ID

0 VD (V)
0.7V

ID = 0 A
ID = 0
Reverse
bias diode
Forward voltage drop approximation
Including diode ohmic resistance
[Si ≈ 0.7V and Ge ≈ 0.3V]
Load Line Analysis and Operating Point

Using Kirchoff Voltage Law,


VD E = VD + RID

ID
E R VR ID = 0 E = VD

VD = 0 ID = E / R
Load Line Analysis and Operating Point

ID
(mA)

E/ R Q Point- Operating Point


IDQ
Load Line

0 VD (V)
0.7V 1V
E
VDQ
Load Line Analysis and Operating Point
Example

For the series diode configuration shown in Fig. (a) employing the diode
characteristics of Fig. (b) determine:
(a) VDQ and .
IDQ (b) VR.
Load Line Analysis and Operating Point
Example

Using Kirchoff Voltage Law,


ID = 0 E = VD = 10V
E = VD + RID

VD = 0 ID = E / R = 10V / 1KΩ = 10mA


Load Line Analysis and Operating Point
Example

• The intersection between the load line and the characteristic


curve defines the Q-point as:

VDQ ≈ 0.78 V
IDQ ≈ 9.25 mA

VR = IR× R = IDQ × R = (9.25 mA)(1kΩ)= 9.25 V

OR

VR = E - VD = 10 V - 0.78 V = 9.22 V

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