Experiment I

Nium: To btain V-l

characterisics of PN juKtion diode
Apparatus: PN diode N4007
Regulatcd Power Supply
Resistor
Ameter (0-20mA)
Voltmeter (0-20V, 0-2 V)
Bread board
Comecting wires
Theory:
The semiconductor diode is formed by doping P-type
impurity in one side and N-type of
impurity m another side of the senmiconductor crystal forming a p-n junction as shown in the
following figure.

Accepter j5s SuDEtiçn Douor icns

Holes
Ele ctrog:

p type n type

Depletion regio

At the junction initially free charge carriers from both side recombine forming negatively
charged ions in P side of junction(an atom in P-side accept clectron and becomes negatively
charged ion) and positively charged ion on n side(an atom in n-side accepts hole i.e. dorates
electron and becomes positively charged ion)region. This region deplete of any type of free
charge carrier is called as depletion region. Further recombination of free carriers on both side is
prevented because of the depletion voltage generated d1ue to charge carriers kept at distance by
depletion (acts as a sort of insulation) layer as shown dotted in the above figure.

Working principle:
X When voltage is not applied across the diode, deplet ion region forms as shuwn in the above
figure. When the voltage is applied between the two terminals of the diode (anode and cathode)
two possibilities arises depending on polarity of DC supply.
[)Forvard-Bias: When the +Ve terminal of the ballery is conncctecd to P-type material &-Ve
 forsard
the dode
I5 sad 1t he
holes n P-npe
in N t pe and
dmyran.

tle co cledrons
rcduces
h o w )
orce j n c u ) 1 Ths
temal s wll l l h w cIossm! he
Ierminal to Npc Lotage
d to Carriers ow acoss
of to albas y inajorily
will
based llhe apphcalion
b00Ddar

ICar i n c r e a s e in reyon width

ccombine wth the ons esull in the depletion idca diode
mateial to futher
will mapnitude

shown in
lis in curtCol as
dth of depleton rcgion in
iDceAscl

finther
Is
|| fomard bas
Cponctial

uncton. )
lo dccrcase
reulin
connectcd with P-
continuc
power sipply)
is
characteUsic Cw\C ()0 diode is said to be
to Ntype then
ballery
of
lerminal copnected

and boles in P-
l|the
negaine
of
battety clectrons in N-type
(2]RevcIse-biascd: leminal (i.c. iminority carriers (i.e.
width. The
carricrs
and +Ve charge
ofdode trec resulting in
depletion region
teminal
d e p l e t i o n , r e g j o n

ype codition Ihe

biascd. In this
widening cross the is
reverse junction
-type) can As no of minoritycarrier
awa fiom in current(s).

Ipc) ilI ONC tve holcs saturation

in reverse bias IS zero.
n p-tvpe and as
reverse ldeally current
-ve clecrOns current ow called flo through diode in reverse
do not
microamperes.

norit Carierr magnitude

ofls is few forward bias and
sothe diode in
wen snall fous
through
direction.
curent
in one
In short. current only
Diode can pass
bias.
Experiment Procedure: diode as shown in the figure for
meter withthe throughdicde and
current current
measure
suppl.
voluneter.
multimeter (one
to
the power two
Connect You can use the ohserntion

forward bias condition.

across
diode).
Z0V in step
as shOwn in readings in the
voltage 0V to down
other to
measure supply from Note
fromthe power through dode.
voltage and current
increase diode
voltage across
1able. Measure
observation table.
polarity for
reverse bias. votage for reverse bias
power suppv values of supply
Reverse DC different
procedure for the
graph
bias in one
Repeat the above bias and reverse
characterist ics for forward
Draw VI
(forward bias) 1K
Circuit diagram

DC PO ER

)-30y
 (revcrse bias):
(icuit liagram
1K

DCPOW ER

(Ohservation table: (Forward bias)

Diode Current
Sr. No Diode Voltage

Observation table: (Reverse bias)

Diode Current
Sr. No Diode Voltage

studied and verified.

Result: V-lcharacteristics of P-N Diode has been