Basic Electronics
EXPERIMENT NO1
PN JUNCTION DIODE
AIM: To obtain V-I characteristics of PN junction diode
Introduction:
The semiconductor diode is formed by doping P-type impurity in one side and Ntype of
impurity in another side of the semiconductor crystal forming a p-n junction as shown in
the following figure.
Acceptor ions Junction Donor ions
Holes Electrons
p type -W, 0 W, n ty pe
Depletio n region
Atthe junction initially free charge carriers from both side recombine forming negatively
charged ions in P side of junction(an atom in P-side accept electron and becomes
negatively charged ion) and positively charged ion on nside(an atom in n-side accepts hole
ie. donates electron and becomes positively charged ion)region. This region deplete of any
type of free charge carrier is called as depletion region. Further recombination of free
carier on both side is prevented because of the depletion voltage generated due to charge
carriers kept at distance by depletion layer as shown dotted in the above figure.
Working principle:
When voltage is not applied across the diode, depletion region forms as shown in the above
figure. When the voltage is applied between the two terminals of the diode (anode and
cathode) two possibilities arises depending on polarity of DC supply.
[1] Forward -Bias Condition: When the +Ve terminal of the battery is connected to P-type
material &-Ve terminal to N-type terminal as shown in the circuit diagram, the diode is
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Basic Electronics
said to beforward biased. The application of forward bias voltage will force electrons in N
type and holes in P-type material to recombine with the ions near boundary and to flow
crOssing junction. This reduces width of depletion region. This further will result in
increase inmajority carriers flow across the junction. If forward bias is further increased in
magnitude the depletion region width will continue to decrease, resulting in exponential
rise in current as shown in ideal diode characteristic curve.
2] Reverse-biased: If the negative terminal of battery (DC power supply) is connected
with P-type terminalof diode and +Ve terminal of battery connected to N type then diode
is said to be reverse biased. In this condition the free charge carriers (i.e. electrons in N
type and holes in P-type) will move away from junction widening depletion region width.
The minority carriers (ie. -Ve electrons in p-type and +Ve holes in n-type) can cross the
depletion region resulting in minority carrier current flow called as reverse saturation
current (ls). As no of minority carrier is very small so the magnitude of Is is few
microamperes. Ideally current in reverse bias is zero.
In short, current flows through diode in forward bias and do not flow through diode in
reverse bias. Diode can pass current only in one direction.
Experiment Procedure:
>Connect the power supply, voltmneter, current meter with the diode as shown in the
figure for forward bias diode. You can use two Multimeter (oneto measure current
through diode and other to measure voltage across diode).
>Increase voltage from the power supply from 0V to 20V in step as shown in the
observation table.
>Measure voltage across diode and current through diode. Note down readings in the
observation table.
>Reverse DC power supply polarity for reverse bias.
>Repeat the above procedure for the different values of supply voltage for reverse
bias.
> Draw VI characteristics for forward bias and reverse bias in one graph.
Circuit diagram (forward bias):
1K
A
DCPOWER IN4007
SUPPY
0-30 V
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Circuit diagram (reve rse bias):
4
1K
DCPOWER IN4007
SUPPY 0 30V
+
:: WORKSHEET ::
Observation table: (Forward bias)
Sr. No. Supply voltage Diode voltage Diode curre nt
(Volt) (Vd) (Id)
1.
2. 0.2
3. 0.4
4. 0.6
5. 0.8
6.
7. 2
8.
9. 6
10.
I1. 10
I2. 15
13. 20
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Observation table: (Reve rse bias)
Sr. No. Supply voltage Diode voltage Diode curre nt
(Vd) (Id)
1.
2.
3. 5
4. 10
5. 15
6. 20
7. 25
8. 30
Conclusion:
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