US 20160244874A1

(19) United States

(12) Patent Application Publication (10) Pub. No.: US 2016/0244874 A1
GE et al. (43) Pub. Date: Aug. 25, 2016
(54) AUTO CAPACITANCETUNER CURRENT C23C I4/54 (2006.01)
COMPENSATION TO CONTROL ONE OR HO3.3/02 (2006.01)
MORE FILMI PROPERTIES THROUGH (52) U.S. Cl.
TARGET LIFE CPC ................. C23C 14/345 (2013.01); H03.J.3/02
(2013.01); C23C 14/0641 (2013.01); C23C
(71) Applicant: APPLIED MATERIALS, INC., Santa 14/54 (2013.01); C23C 14/34 (2013.01)
Clara, CA (US)
(72) Inventors: Zhenbin GE, San Jose, CA (US); Vivek (57) ABSTRACT
GUPTA, Fremont, CA (US); Adolph
Miller ALLEN, Oakland, CA (US);
Ryan HANSON, Cupertino, CA (US) In some embodiments a method of depositing a metal-con
taining layer atop a substrate disposed in a physical vapor
(21) Appl. No.: 15/050,409 deposition (PVD) chamber includes: providing a plasma
(22) Filed: Feb. 22, 2016 forming gas to a processing region of the PVD chamber;
providing a first amount of RF power to a target assembly
Related U.S. Application Data disposed opposite the Substrate to form a plasma within the
(60) Provisional application No. 62/119,776, filed on Feb. processing region of the PVD chamber, sputtering source
23, 2015. material from the target assembly to deposit a metal-contain
ing layer onto the Substrate, wherein the source material is at
Publication Classification a first erosion state; and tuning an auto capacitance tuner
coupled to a Substrate Support while Sputtering source mate
(51) Int. C. rial to maintain an ion energy at a Surface of the Substrate
C23C I4/34 (2006.01) within a predetermined range as the target erodes from the
C23C I4/06 (2006.01) first erosion state to a second erosion state.

103 K
tTN-4 180
150- 74, 162
168-1A ;G still y i. 160
181 X

w
175 A 2Z % ( f 104
169 192
140-71 113 | .ris
120 -7s. 138
146 77
152 -- t t
13 - 106 ---, 110
y

M X)- 128

132 -- )-
122
R
H. 124
---
126
a
Sc.-- 134 -(-) 1 N
Patent Application Publication Aug. 25, 2016 Sheet 1 of 4 US 2016/0244874 A1

118 - - 173

194
172

100 - - a

112 l/T
166-is
164 -
170 - 7 is

150 -
X ' & & W ' & 8 x, y - x
, , ,LJ., , ., ,. ,. , )., , . . .
-- Lll, . .. . . .
ll-L-.

169
Patent Application Publication Aug. 25, 2016 Sheet 2 of 4 US 2016/0244874 A1

2OO
A

PROVIDE A PLASMA FORMING GAS TO A - 202

PROCESSING REGION OF THE PVD
CHAMBER

PROVIDEA FIRST AMOUNT OF RF POWER - 204

TO A TARGET ASSEMBLY DISPOSED
OPPOSITE THE SUBSTRATE TO FORMA
PLASMA WITHIN THE PROCESSING
REGION OF THE PVD CHAMBER

SPUTTER SOURCE MATERIAL FROM THE - 206

TARGET ASSEMBLY TO DEPOSITA
METAL-CONTAINING LAYER ONTO THE
SUBSTRATE, WHEREIN THE SOURCE
MATERIALIS AT A FIRST EROSION STATE

TUNE AN AUTO CAPACITANCE TUNER - 208

COUPLED TO A SUBSTRATE SUPPORT
WHILE SPUTTERING SOURCE MATERIAL TO
MANTAIN RF POWER AT APREDETERMINED
SET POINT VALUE, WHEREIN THE
PREDETERMINED SET POINT VALUES
CALCULATED TO MAINTAIN A CONSTANT
ION ENERGY ATA SURFACE OF THE
SUBSTRATE FROM THE FIRST EROSION
STATE TO A SECONDEROSION STATE

FIG 2
Patent Application Publication Aug. 25, 2016 Sheet 3 of 4 US 2016/0244874 A1

-U-Z9

999
-
_
| 799
–
F
799
~ ~~~Z99

999(~ |-|-999 099

~~
|-Z9 |-U 9
Patent Application Publication Aug. 25, 2016 Sheet 4 of 4 US 2016/0244874 A1

10 - 1 - Current

'
A. |
f
!

o 6S
Pcurrent

FG. 4
US 2016/0244874 A1 Aug. 25, 2016

AUTO CAPACITANCE TUNER CURRENT SUMMARY

COMPENSATION TO CONTROL ONE OR
MORE FILMI PROPERTIES THROUGH 0009 Embodiments of the present disclosure include
TARGET LIFE methods and apparatus for processing a substrate. In some
embodiments, a method of depositing a metal-containing
CROSS-REFERENCE TO RELATED
layer atop a Substrate disposed in a physical vapor deposition
APPLICATIONS (PVD) chamber includes: providing a plasma forming gas to
a processing region of the PVD chamber, providing a first
0001. This application claims benefit of U.S. provisional amount of RF power to a target assembly disposed opposite
patent application Ser. No. 62/119,776, filed Feb. 23, 2015, the Substrate to form a plasma within the processing region of
which is herein incorporated by reference in its entirety. the PVD chamber; sputtering source material from the target
assembly to deposit a metal-containing layer onto the Sub
FIELD strate, wherein the source material is at a first erosion state;
and tuning an auto capacitance tuner coupled to a substrate
0002 Embodiments of the present disclosure generally Support while sputtering source material to maintain an ion
relate to Substrate processing systems. energy at a Surface of the Substrate within a predetermined
range as the target erodes from the first erosion state to a
BACKGROUND second erosion state.
0010. In some embodiments, a method of depositing a
0003 High density, low stress films, for example titanium metal-containing layer atop a Substrate disposed in a physical
nitride (TiN) films, for Back End of Line (BEOL) hard mask vapor deposition (PVD) chamber includes: providing a
applications are used to reduce line bending for patterned plasma forming gas to a processing region of the PVD cham
low-k dielectric trenches as well as to improve low-ketching ber; providing a first amount of RF power to a target assembly
profiles by reducing line edge roughness and critical dimen disposed opposite the Substrate to form a plasma within the
sion (CD) variation. processing region of the PVD chamber, sputtering source
0004 Radio frequency (RF) power may be supplied to a material from the target assembly to deposit a metal-contain
predominantly DC plasma to increase the ionization rate of ing layer onto the Substrate, wherein the Source material is
sputtered material in the plasma. The increased ionization Substantially uneroded at a first erosion state; and tuning an
rate allows for improved Surface mobility of arriving atoms, auto capacitance tuner coupled to a Substrate Support while
resulting in a crystallographic film orientation that is advan Sputtering source material to maintain an ion energy at a
tageous to producing low stress and dense films. In addition, Surface of the Substrate within a predetermined range as the
a high fraction of ionized material arriving at the Substrate target erodes from the first erosion state to a second erosion
level allows for tuning of the incoming ion energy by means state, wherein the source material at the second erosion state
of a wafer pedestal impedance circuit. is substantially eroded.
0005. The RF power is supplied in parallel at the chamber 0011. In some embodiments, a computer readable
cathode (i.e. Sputtering target). A magnetron is used for medium is provided having instructions stored thereon that,
increased electron confinement at the target Surface to when executed, cause a physical vapor deposition (PVD)
improve plasma stability and sputter rate. An erosion track is chamber to perform a method of depositing a metal-contain
established on the surface of the target where material is ing layer atop a Substrate. The method may include any of the
preferentially sputtered. embodiments disclosed herein.
0006. One drawback of using RF power supplied to the 0012. Other and further embodiments of the present dis
target in conjunction with magnetic confinement at the target closure are described below.
surface is that the effectiveness of the RF power delivery is BRIEF DESCRIPTION OF THE DRAWINGS
diminished as the target material erodes. The effectiveness of
the RF power delivery is diminished as the target material 0013 Embodiments of the present disclosure, briefly sum
erodes due to the fact that the physical distance from the marized above and discussed in greater detail below, can be
Surface of the magnet to the Sputtering Surface of the target understood by reference to the illustrative embodiments of
decreases as the target thins. Additionally, the erosion track the disclosure depicted in the appended drawings. However,
on the surface of the targetfurther reduces the effectiveness of the appended drawings illustrate only typical embodiments of
the RF power delivery as the erosion track can further confine the disclosure and are therefore not to be considered limiting
the electrons and thus decreases the plasma density at the of scope, for the disclosure may admit to other equally effec
Substrate level. As the magnetic confinement increases, the tive embodiments.
electrons Supplied by the RF current cannot propagate as 0014 FIG. 1 depicts a schematic cross sectional view of a
efficiently into the plasma as they follow the strengthening (as process chamber in accordance with some embodiments of
a function of erosion depth) magnetic field lines. the present disclosure.
0007. The reduction in RF power delivered to the plasma 0015 FIG.2 depicts a flowchart of a method of processing
reduces the ionization rate as seen directly by a decrease in the a Substrate in accordance with some embodiments of the
current measured at the Substrate Support impedance circuit present disclosure.
and indirectly by the impact on film properties. The advanta 0016 FIG. 3 depicts a circuit implementation of an auto
geous film properties associated with higher ionization, Such capacitance tuner in accordance with some embodiments of
as low stress and high density, start to deteriorate as a function the present disclosure.
of target life due to the increase in magnetic confinement. 0017 FIG. 4 depicts an illustrative auto capacitance tuner
0008 Accordingly, the inventors have provided improved resonance curve in accordance with some embodiments of
methods and apparatus for processing a Substrate. the present disclosure.
US 2016/0244874 A1 Aug. 25, 2016

0018 To facilitate understanding, identical reference process chamber 104. The plasma-forming gas may include
numerals have been used, where possible, to designate iden one or more inert gases, such as a noble gas, or other inert
tical elements that are common to the figures. The figures are gases. For example, non-limiting examples of suitable plasma
not drawn to scale and may be simplified for clarity. Elements forming gases include one or more of argon (Ar), helium
and features of one embodiment may be beneficially incor (He), Xenon (Xe), neon (Ne), hydrogen (H2), nitrogen (N2),
porated in other embodiments without further recitation. oxygen (O), or the like.
DETAILED DESCRIPTION 0024. At 204, a first amount of RF power is provided to the
target assembly 114 to ignite a plasma-forming gas into a
0019. The present disclosure relates to methods of pro plasma within the processing region 120 of the process cham
cessing a Substrate. In some embodiments, the present disclo ber 104. The RF power is an amount of RF power suitable to
Sure relates to methods of depositing a metal-containing layer form a plasma within the processing region 120 and may vary
atop a Substrate disposed in a physical vapor deposition pro depending upon chamber size, geometry, or the like. For
cess (PVD) chamber. In some embodiments, the inventive example, in some embodiments, the first amount of RF power
methods described herein advantageously facilitate the depo is about 500 to about 20,000 watts. In some embodiments, the
sition of a metal-containing layer Suitable as a hard mask amount of RF power provided to the target assembly can be
layer, for example a titanium nitride layer, having improved kept constant throughout the life of the target. In some
stress, resistivity and density uniformity properties. For embodiments, the amount of RF power can be increased over
example, high density, low stress titanium nitride (TiN) films the life of the target to compensate for a reduced ionization
or the like, useful for back end of line (BEOL) hard mask rate within the plasma as the target erodes.
applications, are used to reduce line bending for patterned
low k dielectric trenches as well as improve low k etching (0025. At 206, the source material 113 is sputtered from the
profiles by reducing line edge roughness and critical dimen target assembly 114 to deposit a metal-containing layer onto
the substrate 108. The source material 113 is at a first erosion
sion (CD) variation.
0020 FIG.1 depicts a simplified, cross-sectional view of a state when source material 113 is initially sputtered. In some
physical vapor deposition (PVD) processing system 100, in embodiments, the source material 113 at the first erosion state
accordance with some embodiments of the present disclo is Substantially uneroded (i.e. is at or very near the beginning
sure. FIG. 2 depicts a flow chart of a method 200 for depos of the target life). The source material 113 may comprise one
iting a layer atop a Substrate disposed in a physical vapor or more of metals, metal alloys, or the like, suitable for form
deposition process system of the type described in FIG. 1. ing a metal-containing layer on the substrate 108. For
Examples of other PVD chambers suitable for performing the example, the source material 113 may comprise one or more
method 200 described herein include the CIRRUSTM and of titanium (Ti), tantalum (Ta), copper (Cu), cobalt (Co),
AVENIRTM PVD processing chambers, both commercially tungsten (W), aluminum (Al), or the like. Metal atoms from
available from Applied Materials, Inc., of Santa Clara, Calif. the source material 113 are sputtered using the plasma while
0021. The method 200 is performed on a substrate 108 maintaining a first pressure in the process chamber 104. The
within a process chamber, for example the physical vapor first pressure is a pressure Sufficient to ionize a predominant
deposition (PVD) process chamber (process chamber 104) portion of metal atoms being Sputtered from the target assem
shown in FIG.1. The process chamber 104 depicted in FIG. 1 bly 114. The first pressure may be dependent on process
comprises a Substrate Support 106, a target assembly 114 chamber geometry (Such as Substrate size, target to Substrate
having an optional backing plate assembly 160 and Source distance, and the like).
material 113 which is disposed on a Substrate Support facing 0026. When depositing a metal-containing layer, such as a
side of the backing plate assembly 160. The process chamber titanium nitride layer, the inventors have observed that
104 further comprises a radio frequency (RF) power source increasing the ionization rate of nitrogen and titanium within
182 to provide RF energy to the target assembly 114. the plasma by applying RF power to the target assembly 114
0022. The substrate 108 may be any suitable substrate allows for improved surface mobility of arriving atoms, thus
having any suitable geometry, Such as a round wafer, square, providing a crystallographic film orientation that is advanta
rectangular, or the like. The substrate 108 may comprise any geous for forming low stress and dense films. In addition, a
Suitable materials, such as one or more of silicon (Si), silicon high fraction of ionized material arriving at the substrate 108
oxide (SiO), silicon nitride (SiN), glass, other dielectric level allows fortuning of the incoming ion energy (i.e., the ion
materials, or the like, and may have one or more layers of energy at the Substrate Surface) using a Substrate Support
other materials disposed atop the substrate 108. In some impedance circuit (e.g., auto capacitance tuner 136 described
embodiments, the substrate 108 may include an upper layer of below with respect to FIG. 1 and FIG. 3) to control substrate
a low k dielectric material, and in Some embodiments, an current (e.g., ion energy at the Substrate level) to further
ultra-low k dielectric material. As used herein ultra-low k advantageously facilitate control over the crystallographic
dielectric materials include dielectric materials having a k film orientation that is advantageous for forming low stress
value of less than or equal to about 2.5. The substrate 108 may and dense films. The auto capacitance tuner 136 adjusts the
be a blank Substrate (e.g., having no features disposed capacitance (and thus impedance) from the Substrate Support
thereon), or the substrate 108 may have features formed in or pedestal electrode to ground. An exemplary Substrate Support
on the Substrate. Such as Vias or trenches, or high aspect ratio impedance circuit (e.g., auto capacitance tuner 136) may
features, for example, for through silicon via (TSV) applica provide a current of about 0.5 to about 20amps. In addition to
tions or the like. A high aspect ratio feature as used herein may maintaining desirable film properties over the life of the tar
include those features having a height to width aspect ratio of get, the inventors have further observed that the useable target
at least about 5:1 (e.g., a high aspect ratio). life can advantageously be increased from about 1000kWh to
0023 The method 200 begins at 202, wherein a plasma about 4000 kWh when using methods in accordance with the
forming gas is provided to a processing region 120 of the present disclosure.
US 2016/0244874 A1 Aug. 25, 2016

0027. However, the inventors have also observed that the end of the target life needed to maintain equivalent film prop
effectiveness of the RF power applied to the target assembly erties from the start of target life to the end of target life
114 is diminished as the target material erodes, resulting in a divided by the percentage of target life used. The coefficient
lessened ion density in the plasma. While the amount of RF may be stored in the controller 194, as described below and
power can be increased to compensate for the reduced ion depicted in FIG.1. In some embodiments, the source material
ization rate over the life of the target, the inventors have 113 at the second erosion state is substantially eroded (i.e., is
observed that Such compensation alone is insufficient to at or very near the end of the target life). In some embodi
maintain consistent deposited film properties over the life of ments, the source material 113 at the first erosion state is
the target. Without wishing to be bound by theory, the inven Substantially uneroded (i.e., is unused and ready to begin
tors believe that the reduction in the effectiveness of the RF processing Substrates), and the source material 113 at the
power is due to the decrease in the physical distance from the second erosion state is Substantially eroded (i.e., is at or very
Surface of the magnet to the Sputtering Surface of the target as near the end of the target life).
the target thins. Furthermore, the erosion track formed on the 0031. Accordingly, in some embodiments, the current
surface of the source material 113 from the sputtering process across the auto capacitance tuner 136 may be measured to
confines the electrons and thus decreases the plasma density determine the ion energy at the Substrate and the position or
at the Substrate level. As the magnetic confinement increases, set point of the auto capacitance tuner 136 can be adjusted if
the electrons Supplied by the RF current cannot propagate as necessary in response to the measured current in order to
efficiently into the plasma as they follow the strengthening (as maintain the ion energy at the Substrate at the desired level as
a function of erosion depth) magnetic field lines, thus result described above. Alternatively or in combination, the bias
ing in decreasing ion density as the target erodes. The inven Voltage on the Substrate can be measured (and correlated to
tors have further discovered that improved film property con the ion energy at the Substrate empirically or by modelling)
trol can be advantageously achieved by controlling the ion and used to determine whether the actual ion energy needs to
energy over the course of target life and providing ion energy be increased or decreased (and the auto capacitance tuner 136
(e.g., current) compensation to provide a controlled amount adjusted) to maintain the ion energy at the Substrate at the
of increase in ion energy at the Substrate level to compensate desired level.
for the decreasing ion density. 0032. In some embodiments, tuning the auto capacitance
0028. The PVD processing system 100 further comprises tuner 136 comprises comparing a position of the auto capaci
a Substrate Support impedance circuit, such as auto capaci tance tuner 136 to the predetermined set point position. In
tance tuner 136, coupled to the substrate support 106 for some embodiments, the position of the auto capacitance tuner
adjusting the plasma sheath voltage at the substrate 108. For 136 is greater than the predetermined set point position, and
example, the auto capacitance tuner 136 may be used to the amount of RF power controlled by the auto capacitance
control the sheath voltage at the substrate 108, and thus, the tuner 136 (ion current at the substrate levelas measured by the
Substrate current (e.g., ion energy at the Substrate level). Thus, current from the auto capacitance tuner 136) is less than the
at 208, while sputtering the source material 113, the auto predetermined set point value. In such embodiments, the
capacitance tuner 136 is tuned to maintain the amount of RF position of the auto capacitance tuner 136 is decreased until
current at the Substrate Support at a predetermined set point the amount of RF power (current measured at the auto capaci
value, or within a predetermined range of the predetermined tance tuner 136) controlled by the auto capacitance tuner 136
set point value. equals the predetermined set point value.
0029. In some embodiments, tuning the auto capacitance 0033. In some embodiments, the position of the auto
tuner 136 comprises calculating the predetermined set point capacitance tuner 136 is greater than the predetermined set
value and calculating the predetermined set point position. point position, and the amount of RF power controlled by the
The predetermined set point position may be determined auto capacitance tuner 136 (ion current at the substrate level
empirically or by modeling as the auto capacitance tuner 136 as measured by the current from the auto capacitance tuner
position with the highest current output. 136) is greater than the predetermined set point value. In such
0030 The predetermined set point value is calculated to embodiments, the position of the auto capacitance tuner 136
maintain a Substantially constantion energy at a Surface of the is increased until the amount of RF power (current measured
Substrate as the source material 113 erodes (i.e. goes from a at the auto capacitance tuner 136) controlled by the auto
first erosion state to a seconderosion state). As used herein the capacitance tuner 136 equals the predetermined set point
term "substantially constantion energy refers to maintaining value.
the ion energy at within 20 percent of the ion energy at the first 0034. In some embodiments, the position of the auto
erosion state, or within 10 percent of the ion energy at the first capacitance tuner 136 is less than the predetermined set point
erosion state. In some embodiments, the predetermined set position and the amount of RF power controlled by the auto
point value may be calculated to maintain the ion energy at the capacitance tuner 136 (ion current at the substrate level as
surface of the substrate at between about 10 to about 20 measured by the current from the auto capacitance tuner 136)
percent of the ion energy at the surface of the substrate while is less than the predetermined set point value. In such embodi
the target is at the first erosion state. For example, the prede ments, the position of the auto capacitance tuner 136 is
termined set point value may be calculated by determining a increased until the amount of RF power (current measured at
pre-defined target life-based compensation coefficient ("co the auto capacitance tuner 136) controlled by the auto capaci
efficient'). The coefficient may be determined empirically or tance tuner 136 equals the predetermined set point value.
by modeling based on the life of the target to maintain a 0035. In some embodiments, the position of the auto
constant ion energy at a Surface of the Substrate when the capacitance tuner 136 is less than the predetermined set point
Source material 113 is at a second erosion state (e.g., more position and the amount of RF power controlled by the auto
eroded than the first erosion state). The coefficient is the capacitance tuner 136 (ion current at the substrate level as
difference in the current from the start of the target life to the measured by the current from the auto capacitance tuner 136)
US 2016/0244874 A1 Aug. 25, 2016

is greater than the predetermined set point value. In Such impedance to) a narrow frequency band, one pass filter being
embodiments, the position of the auto capacitance tuner 136 provided for each frequency of interest. The impedance pre
is decreased until the amount of RF power (current measured sented by each notch filter may be variable, to provide full
at the auto capacitance tuner 136) controlled by the auto control of impedances for each frequency of interest. The
capacitance tuner 136 equals the predetermined set point frequencies of interest include the bias frequency fb, the
value. Source frequency fs, harmonics offs, harmonics offb, inter
0036 FIG. 4 depicts an exemplary auto capacitance tuner modulation products offs and fb, and harmonics of the inter
resonance curve in accordance with some embodiments of modulation products.
tuning the auto capacitance tuner 136, comparing a position 0039 FIG. 3 depicts the auto capacitance tuner 136 with
of the auto capacitance tuner 136 to a predetermined set point one implementation of the notch filter array352 and the pass
position. The position of the auto capacitance tuner 136 is filter array 354. The notch filter array352 includes a set of m
shown as P, in FIG. 4. The predetermined set point (where m is an integer) individual notch filters 356-1 through
position is shown as P, in FIG. 4 and corresponds to 356-m connected in series. Each individual notch filter 356
the position of the auto capacitance tuner 136 that yields the consists of a variable capacitor 358 of capacitance C and an
highest current. As described above, the position of the auto inductor 360 of inductance L, the individual notch filter hav
capacitance tuner 136 (P) can be greater or less than the ing a resonant frequency fr-1/2 (LC)/2. The reactances L
predetermined set point position (P.). FIG. 4 illustra and C of each notch filter 356 are different and are selected so
tively depicts the position of the auto capacitance tuner 136 that the resonant frequency fr of a particular notch filter
(P) as greater than the predetermined set point position corresponds to one of the frequencies of interest, each notch
(P). The amount of RF power controlled by the auto filter 356 having a different resonant frequency. The resonant
capacitance tuner 136 (ion current at the substrate level as frequency of each notch filter 356 is the center of the narrow
measured by the current from the auto capacitance tuner 136) band of frequencies blocked by the notch filter 356. The pass
is shown as A in FIG. 4. The predetermined set point filter array 354 of FIG. 3 includes a set of n (where n is an
value is shown as A, in FIG. 4. As described above, the integer) individual pass filters 362-1 through 362-n con
ion current at the substrate level as measured by the current nected in parallel. Each individual pass filter 362 consists of
from the auto capacitance tuner 136 (A in FIG. 4) can be a variable capacitor 364 of capacitance C and an inductor 366
greater or less than the predetermined set point value (A of inductance L, the pass filter 362 having a resonant fre
point). Accordingly, the position of the auto capacitance tuner quency fr=1/2 (LC)/2. Optionally, each pass filter 362 may
136 (P) can be increased or decreased until the current include, in addition, a series switch 363 to permit the pass
measured at the auto capacitance tuner 136 (A) equals filter to be disabled. The reactances Land C of each pass filter
the predetermined set point value (A). FIG. 4 depicts 362 are different and are selected so that the resonant fre
an embodiment where the A, is greater than the A. quency fr corresponds to one of the frequencies of interest,
Accordingly, the position of the auto capacitance tuner 136 each pass filter 362 having a different resonant frequency. The
(P) can be increased until the amount of current mea resonant frequency of each pass filter 362 is the center of the
sured at the auto capacitance tuner 136 (Acappeat ) equals the narrow band of frequencies passed or admitted by the pass
predetermined set point value (Aset point). filter 362. In the implementation of FIG. 3, there are n pass
0037. In some embodiments, a controller 194, as filters 362 in the pass filter array 354 and m notch filters in the
described below and depicted in FIG. 1, may be provided and notch filter array352.
coupled to various components of the PVD processing system 0040. Returning to FIG. 1, a second energy source 183,
100 to control the operation thereof. In some embodiments, optionally coupled to the target assembly 114, may provide
the controller 194 is coupled to the auto capacitance tuner DC power to the target assembly 114 to direct the plasma
136. In some embodiments, the auto capacitance tuner 136 is towards the target assembly 114. In some embodiments, the
coupled to the controller 194 using a digital communication DC power may range from about 1 to about 20 kilowatts
mechanism to improve the accuracy of the communication (kW), although the amount of DC power applied may vary
between the auto capacitance tuner 136 and the controller 194 depending upon chamber geometry (e.g., target size or the
as compared to analog communication mechanisms. like). In some embodiments, the DC power may also be
0038 FIG. 3 depicts one embodiment of an auto capaci adjusted over the life of the target in the same manner as
tance tuner 136. Further embodiments of a suitable auto described above for the RF power. The DC power may be
capacitance tuner are described in commonly owned U.S. adjusted to control the deposition rate of sputtered metal
Patent Publication No. 2011/0209995, to Rasheed, et al., and atoms on the Substrate. For example, increasing the DC power
published Sep. 1, 2011. In FIG. 3, the auto capacitance tuner can result in increased interaction of the plasma with the
136 includes an array of variable band reject (“notch') filters Source material 113 and increased sputtering of metal atoms
(i.e. notch filter array352) and an array of variable band pass from the target assembly 114. In some embodiments, the DC
(“pass') filters (i.e. pass filter array 354). The notch filter power may be adjusted to maintain a ratio of DC power to RF
array 352 consists of many notch filters, each notch filter power of about 2:1 to about 10:1.
blocking a narrow frequency band, one notch filter being 0041. The PVD processing system 100 includes a cham
provided for each frequency of interest. The impedance pre ber lid 102 removably disposed atop a process chamber 104.
sented by each notch filter may be variable, to provide full The chamber lid 102 may include the target assembly 114 and
control of impedances for each frequency of interest. The a grounding assembly 103. The process chamber 104 con
frequencies of interest include the bias frequency fb, the tains a substrate support 106 for receiving a substrate 108.
Source frequency fs, harmonics offs, harmonics offb, inter The substrate support 106 may be located within a lower
modulation products offs and fb and the harmonics of the grounded enclosure wall 110, which may be a chamber wall
intermodulation products. The pass filter array 354 consists of of the process chamber 104. The lower grounded enclosure
many pass filters, each pass filter passing (presenting a low wall 110 may be electrically coupled to the grounding assem
US 2016/0244874 A1 Aug. 25, 2016

bly 103 of the chamber lid 102 such that an RF return path is through the use of pulleys, gears, or other Suitable means of
provided to an RF power source 182 disposed above the transferring the rotational motion provided by the motor 176.
chamber lid 102. The RF power source 182 may provide RF 0047. The substrate support 106 has a material-receiving
energy to the target assembly 114 as discussed below. Alter Surface facing a principal Surface of a target assembly 114 and
natively or in combination a DC power source may be simi supports the substrate 108 to be sputter coated in planar
larly coupled to target assembly 114. position opposite to the principal Surface of the target assem
0042. The PVD processing system 100 may include a bly 114. The substrate support 106 may support the substrate
source distribution plate 158 opposing a backside of the target 108 in a processing region 120 of the process chamber 104.
assembly 114 and electrically coupled to the target assembly The processing region 120 is defined as the region above the
114 along a peripheral edge of the target assembly 114. The Substrate Support 106 during processing (for example,
PVD processing system 100 may include a cavity 170 dis between the target assembly 114 and the substrate support
posed between the backside of the target assembly 114 and 106 when in a processing position).
the source distribution plate 158. The cavity 170 may at least 0048. In some embodiments, the substrate support 106
partially house a magnetron assembly 196 as discussed may be vertically movable to allow the substrate 108 to be
below. The cavity 170 is at least partially defined by the inner transferred onto the substrate support 106 through a load lock
Surface of a conductive Support ring 164, a target facing valve (not shown) in the lower portion of the process chamber
surface of the source distribution plate 158, and a source 104 and thereafter raised to a deposition, or processing posi
distribution plate facing Surface (e.g., backside) of the target tion. Abellows 122 connected to a bottom chamber wall 124
assembly 114 (or backing plate assembly 160). may be provided to maintain a separation of the inner Volume
0043. The PVD processing system 100 further includes a of the process chamber 104 from the atmosphere outside of
magnetron assembly 196. The magnetron assembly 196 pro the process chamber 104 while facilitating vertical movement
vides a rotating magnetic field proximate the target assembly of the substrate support 106. One or more gases may be
114 to assist in plasma processing within the process chamber Supplied from a gas source 126 through a mass flow controller
104. The magnetron assembly includes a rotatable magnet 128 into the lower part of the process chamber 104. An
assembly 148 disposed within the cavity 170. The rotatable exhaust port 130 may be provided and coupled to a pump (not
magnet assembly 148 rotates about a central axis 186 of the shown) via a valve 132 for exhausting the interior of the
process chamber 104. process chamber 104 and to facilitate maintaining a Suitable
0044. In some embodiments, the magnetron assembly 196 pressure inside the process chamber 104.
includes a motor 176, a motor shaft 174, a gear assembly 178, 0049. In some embodiments, an RF bias power source 134
and the rotatable magnet assembly 148. The rotatable magnet may be coupled to the substrate support 106 in order to induce
assembly 148 includes a plurality of magnets 150 and is a negative DC bias on the substrate 108. In addition, in some
configured to rotate the plurality of magnets 150 about the embodiments, a negative DC self-bias may form on the sub
central axis 186 as described below. The motor 176 may bean strate 108 during processing. For example, RF energy Sup
electric motor, a pneumatic or hydraulic drive, or any other plied by the RF bias power source 134 may range infrequency
process-compatible mechanism that can provide Suitable from about 2 MHZ to about 60 MHz, for example, non
torque. While one illustrative embodiment is described herein limiting frequencies such as 2 MHZ, 13.56MHz, or 60 MHz
to illustrate how the rotatable magnet assembly 148 may be can be used. In some embodiments, RF bias power may be
rotated, other configurations may also be used. supplied in a range from about 100W to about 2 kW. In some
0045. In use, the magnetron assembly 196 rotates the embodiments, DC power may be supplied in range from
rotatable magnet assembly 148 within the cavity 170. For about 2 kW to about 40 kW. In other applications, the sub
example, in some embodiments, the motor 176, motor shaft strate support 106 may be grounded or left electrically float
174, and gear assembly 178 may be provided to rotate the 1ng.
rotatable magnet assembly 148. In some embodiments, the 0050. The process chamber 104 further includes a process
electrode 154 is aligned with the central axis 186 of the kit shield, or shield, 138 to surround the processing volume,
process chamber 104, and motor shaft 174 of the magnetron or central region, of the process chamber 104 and to protect
may be disposed through an off-center opening in the ground other chamber components from damage and/or contamina
plate 156. The end of the motor shaft 174 protruding from the tion from processing. In some embodiments, the shield 138
ground plate 156 is coupled to the motor 176. The motor shaft may be connected to a ledge 140 of an upper grounded enclo
174 is further disposed through an off-center opening in the sure wall 116 of the process chamber 104. As illustrated in
source distribution plate 158 and coupled to a gear assembly FIG. 1, the chamber lid 102 may rest on the ledge 140 of the
178. upper grounded enclosure wall 116. Similar to the lower
0046. The gear assembly 178 may be supported by any grounded enclosure wall 110, the upper grounded enclosure
Suitable means, such as by being coupled to a bottom Surface wall 116 may provide a portion of the RF return path between
of the source distribution plate 158. The gear assembly 178 the lower grounded enclosure wall 116 and the grounding
may be insulated from the source distribution plate 158 by assembly 103 of the chamber lid 102. However, other RF
fabricating at least the upper surface of the gear assembly 178 return paths are possible, such as via the grounded shield 138.
from a dielectric material, or by interposing an insulator layer 0051. The shield 138 extends downwardly and may
(not shown) between the gear assembly 178 and the source include a generally tubular portion having a generally con
distribution plate 158, or the like, or by constructing the motor stant diameter that generally Surrounds the processing region
shaft 174 out of suitable dielectric material. The gear assem 120. The shield 138 extends along the walls of the upper
bly 178 is further coupled to the rotatable magnet assembly grounded enclosure wall 116 and the lower grounded enclo
148 to transfer the rotational motion provided by the motor sure wall 110 downwardly to below a top surface of the
176 to the rotatable magnet assembly 148. The gear assembly Substrate Support 106 and returns upwardly until reaching a
178 may be coupled to the rotatable magnet assembly 148 top Surface of the Substrate Support 106 (e.g., forming a
US 2016/0244874 A1 Aug. 25, 2016

u-shaped portion at the bottom of the shield 138). A coverring comprise a conductive material. Such as copper-zinc, copper
146 rests on the top of an upwardly extending inner portion of chrome, or the same material as the target, such that RF and
the shield 138 when the substrate support 106 is in the lower, DC power can be coupled to the source material 113 via the
loading position but rests on the outer periphery of the Sub backing plate assembly 160. Alternatively, the backing plate
strate support 106 when the substrate support is in the upper, assembly 160 may be non-conductive and may include con
deposition position to protect the substrate support 106 from ductive elements (not shown) such as electrical feedthroughs
sputter deposition. An additional deposition ring (not shown) or the like.
may be used to protect the edges of the substrate support 106 0057. In some embodiments, the backing plate assembly
from deposition around the edge of the substrate 108. 160 includes a first backing plate 161 and a second backing
0052. In some embodiments, a magnet 152 may be dis plate 162. The first backing plate 161 and the second backing
posed about the process chamber 104 for selectively provid plate 162 may be disc shaped, rectangular, square, or any
ing a magnetic field between the substrate support 106 and the other shape that may be accommodated by the PVD process
target assembly 114. For example, as shown in FIG. 1, the ing system 100. A front side of the first backing plate 161 is
magnet 152 may be disposed about the outside of the enclo configured to support the source material 113 such that a front
sure wall 110 in a region just above the substrate support 106 surface of the source material opposes the substrate 108 when
when in processing position. In some embodiments, the mag present. The source material 113 may be coupled to the first
net 152 may be disposed additionally or alternatively in other backing plate 161 in any suitable manner. For example, in
locations, such as adjacent the upper grounded enclosure wall some embodiments, the source material 113 may be diffusion
116. The magnet 152 may be an electromagnet and may be bonded to the first backing plate 161.
coupled to a power source (not shown) for controlling the 0.058 A plurality of sets of channels 169 may be disposed
magnitude of the magnetic field generated by the electromag between the first and secondbacking plates 161,162. The first
net and second backing plates 161,162 may be coupled together
0053. The chamber lid 102 generally includes the ground to form a Substantially water tight seal (e.g., a fluid seal
ing assembly 103 disposed about the target assembly 114. between the first and second backing plates) to prevent leak
The grounding assembly 103 may include a grounding plate age of coolant provided to the plurality of sets of channels
156 having a first surface 157 that may be generally parallel to 169. In some embodiments, the target assembly 114 may
and opposite a backside of the target assembly 114. A ground further comprise a central support member 192 to support the
ing shield 112 may extending from the first surface 157 of the target assembly 114 within the process chamber 104.
grounding plate 156 and surround the target assembly 114. 0059. In some embodiments, the conductive support ring
The grounding assembly 103 may include a Support member 164 may be disposed between the source distribution plate
175 to support the target assembly 114 within the grounding 158 and the backside of the target assembly 114 to propagate
assembly 103. RF energy from the source distribution plate to the peripheral
0054. In some embodiments, the support member 175 edge of the target assembly 114. The conductive Support ring
may be coupled to a lower end of the grounding shield 112 164 may be cylindrical, with a first end 166 coupled to a
proximate an outer peripheral edge of the Support member target-facing surface of the source distribution plate 158
175 and extends radially inward to support a seal ring 181, proximate the peripheral edge of the source distribution plate
and the target assembly 114. The seal ring 181 may be a ring 158 and a second end 168 coupled to a source distribution
or other annular shape having a suitable cross-section. The plate-facing Surface of the target assembly 114 proximate the
seal ring 181 may include two opposing planar and generally peripheral edge of the target assembly 114. In some embodi
parallel Surfaces to facilitate interfacing with the target ments, the second end 168 is coupled to a source distribution
assembly 114. Such as the backing plate assembly 160, on a plate facing Surface of the backing plate assembly 160 proxi
first side of the seal ring 181 and with the support member 175 mate the peripheral edge of the backing plate assembly 160.
on a second side of the seal ring 181. The seal ring 181 may be 0060 An insulative gap 180 is provided between the
made of a dielectric material. Such as ceramic. The seal ring grounding plate 156 and the outer surfaces of the source
181 may insulate the target assembly 114 from the ground distribution plate 158, the conductive support ring 164, and
assembly 103. the target assembly 114 (and/or backing plate assembly 160).
0055. The support member 175 may be a generally planar The insulative gap 180 may be filled with air or some other
member having a central opening to accommodate the target Suitable dielectric material. Such as a ceramic, a plastic, or the
assembly 114. In some embodiments, the Support member like. The distance between the grounding plate 156 and the
175 may be circular, or disc-like in shape, although the shape source distribution plate 158 depends on the dielectric mate
may vary depending upon the corresponding shape of the rial between the grounding plate 156 and the source distribu
chamber lid and/or the shape of the substrate to be processed tion plate 158. Where the dielectric material is predominantly
in the PVD processing system 100. air, the distance between the grounding plate 156 and the
0056. The target assembly 114 may comprise a source source distribution plate 158 may be between about 15 mm
material 113, Such as a metal, metal oxide, metal alloy, or the and about 40 mm.
like, to be deposited on a substrate, such as the substrate 108 0061 The grounding assembly 103 and the target assem
during sputtering. In some embodiments, the target assembly bly 114 may be electrically separated by the seal ring 181 and
114 may be fabricated substantially from the source material by one or more of insulators (not shown) disposed between
113, without any backing plate to Support the Source material the first surface 157 of the grounding plate 156 and the back
113. In some embodiments, the target assembly 114 includes side of the target assembly 114, e.g., a non-target facing side
a backing plate assembly 160 to Support the source material of the source distribution plate 158.
113. The source material 113 may be disposed on a substrate 0062. The PVD processing system 100 has an RF power
Support facing side of the backing plate assembly 160 as source 182 connected to an electrode 154 (e.g., a RF feed
illustrated in FIG. 1. The backing plate assembly 160 may structure). The electrode 154 may pass through the grounding
US 2016/0244874 A1 Aug. 25, 2016

plate 156 and is coupled to the source distribution plate 158. positioning may facilitate symmetric RF wave propagation
The RF power source 182 may include an RF generator and a along the surface of the source distribution plate 158 and,
matching circuit, for example, to minimize reflected RF ultimately, to a target assembly 114 coupled to the source
energy reflected back to the RF generator during operation. distribution plate 158. The RF energy may be provided in a
For example, RF energy supplied by the RF power source 182 more symmetric and uniform manner as compared to conven
may range in frequency from about 13.56 MHz to about 162 tional PVD chambers due, at least in part, to the central
MHZ or above. For example, non-limiting frequencies such as position of the electrode 154.
13.56MHz, 27.12 MHz, 40.68 MHz, 60 MHz, or 162 MHz 0066. A controller 194 may be provided and coupled to
can be used. various components of the PVD processing system 100 to
0063. In some embodiments, PVD processing system 100 control the operation thereof. The controller 194 includes a
may include a second energy source 183 to provide additional central processing unit (CPU) 118, a memory 172, and Sup
energy to the target assembly 114 during processing. In some port circuits 173. The controller 194 may control the PVD
embodiments, the second energy source 183 may be a DC processing system 100 directly, or via computers (or control
power source to provide DC energy, for example, to enhance lers) associated with particular process chamber and/or Sup
asputtering rate of the target material (and hence, a deposition port system components. The controller 194 may be one of
rate on the Substrate). In some embodiments, the second any form of general-purpose computer processor that can be
energy source 183 may be a second RF power source, similar used in an industrial setting for controlling various chambers
to the RF power source 182, to provide RF energy, for and Sub-processors. The memory, or computer readable
example, at a second frequency different than a first fre medium, 172 of the controller 194 may be one or more of
quency of RF energy provided by the RF power source 182. In readily available memory Such as random access memory
embodiments where the second energy source 183 is a DC (RAM), read only memory (ROM), floppy disk, hard disk,
power source, the second energy source may be coupled to the optical storage media (e.g., compact disc or digital video
target assembly 114 in any location Suitable to electrically disc), flash drive, or any other form of digital storage, local or
couple the DC energy to the target assembly 114. Such as the remote. The support circuits 173 are coupled to the CPU 118
electrode 154 or some other conductive member (such as the for Supporting the processor in a conventional manner. These
source distribution plate 158, discussed below). In embodi circuits include cache, power Supplies, clock circuits, input/
ments where the second energy source 183 is a second RF output circuitry and Subsystems, and the like. Inventive meth
power source, the second energy source may be coupled to the ods as described herein may be stored in the memory 264 as
target assembly 114 via the electrode 154. software routine that may be executed or invoked to control
0064. The electrode 154 may be cylindrical or otherwise the operation of the PVD processing system 100 in the man
rod-like and may be aligned with a central axis 186 of the ner described herein. The software routine may also be stored
process chamber 104 (e.g., the electrode 154 may be coupled and/or executed by a second CPU (not shown) that is remotely
to the target assembly at a point coincident with a central axis located from the hardware being controlled by the CPU 118.
of the target, which is coincident with the central axis 186). 0067. While the foregoing is directed to particular
The electrode 154, aligned with the central axis 186 of the embodiments of the present disclosure, other and further
process chamber 104, facilitates applying RF energy from the embodiments of the disclosure may be devised without
RF power source 182 to the target assembly 114 in an axi departing from the basic scope of the disclosure.
symmetrical manner (e.g., the electrode 154 may couple RF 1. A method of depositing a metal-containing layer atop a
energy to the target at a 'single point' aligned with the central substrate disposed in a physical vapor deposition (PVD)
axis of the PVD chamber). The central position of the elec chamber, comprising:
trode 154 helps to eliminate or reduce deposition asymmetry providing a plasma forming gas to a processing region of
in substrate deposition processes. The electrode 154 may the PVD chamber;
have any Suitable diameter. For example, although other providing a first amount of RF power to a target assembly
diameters may be used, in Some embodiments, the diameter disposed opposite the Substrate to form a plasma within
of the electrode 154 may be about 0.5 to about 2 inches. The the processing region of the PVD chamber;
electrode 154 may generally have any suitable length depend sputtering source material from the target assembly to
ing upon the configuration of the PVD chamber. In some deposit a metal-containing layer onto the Substrate,
embodiments, the electrode may have a length of between wherein the source material is at a first erosion state; and
about 0.5 to about 12 inches. The electrode 154 may be tuning an auto capacitance tuner coupled to a substrate
fabricated from any Suitable conductive material. Such as Support while Sputtering source material to maintain an
aluminum, copper, silver, or the like. Alternatively, in some ion energy at a Surface of the Substrate within a prede
embodiments, the electrode 154 may be tubular. In some termined range as the target erodes from the first erosion
embodiments, the diameter of the tubular electrode 154 may state to a second erosion state.
be suitable, for example, to facilitate providing a central shaft 2. The method of claim 1, wherein tuning the auto capaci
for the magnetron. tance tuner comprises comparing a position of the auto
0065. The electrode 154 may pass through the ground capacitance tuner to a predetermined set point position of the
plate 156 and is coupled to the source distribution plate 158. auto capacitance tuner.
The ground plate 156 may comprise any suitable conductive 3. The method of claim 2, wherein an amount of ion energy
material. Such as aluminum, copper, or the like. The open at the Substrate controlled by the auto capacitance tuner is less
spaces between the one or more insulators (not shown) allow than the predetermined set point value, and wherein tuning
for RF wave propagation along the Surface of the Source the auto capacitance tuner further comprises decreasing the
distribution plate 158. In some embodiments, the one or more position of the auto capacitance tuner until the amount of
insulators may be symmetrically positioned with respect to current measured at the auto capacitance tuner equals the
the central axis 186 of the PVD processing system. Such predetermined set point value.
US 2016/0244874 A1 Aug. 25, 2016

4. The method of claim 2, wherein an amount of ion energy tuner is less than the predetermined set point value, and
at the Substrate controlled by the auto capacitance tuner is wherein tuning the auto capacitance tuner further comprises
greater than the predetermined set point value, and wherein decreasing the position of the auto capacitance tuner until the
tuning the auto capacitance tuner further comprises increas amount of current measured at the auto capacitance tuner
ing the position of the auto capacitance tuner until the amount equals the predetermined set point value.
of current measured at the auto capacitance tuner equals the
predetermined set point value. 15. The method of claim 12, wherein an amount of ion
5. The method of claim 2, wherein an amount of ion energy energy at the Substrate controlled by the auto capacitance
at the Substrate controlled by the auto capacitance tuner is less tuner is greater than the predetermined set point value, and
than the predetermined set point value, and wherein tuning wherein tuning the auto capacitance tuner further comprises
the auto capacitance tuner further comprises increasing the increasing the position of the auto capacitance tuner until the
position of the auto capacitance tuner until the amount of amount of current measured at the auto capacitance tuner
current measured at the auto capacitance tuner equals the equals the predetermined set point value.
predetermined set point value.
6. The method of claim 2, wherein an amount of ion energy 16. The method of claim 12, wherein an amount of ion
at the Substrate controlled by the auto capacitance tuner is energy at the Substrate controlled by the auto capacitance
greater than the predetermined set point value, and wherein tuner is less than the predetermined set point value, and
tuning the auto capacitance tuner further comprises decreas wherein tuning the auto capacitance tuner further comprises
ing the position of the auto capacitance tuner until the amount increasing the position of the auto capacitance tuner until the
of current measured at the auto capacitance tuner equals the amount of current measured at the auto capacitance tuner
predetermined set point value. equals the predetermined set point value.
7. The method of claim 1, wherein the source material at 17. The method of claim 12, wherein an amount of ion
the first erosion state is substantially uneroded. energy at the Substrate controlled by the auto capacitance
8. The method of claim 1, wherein the source material at tuner is greater than the predetermined set point value, and
the second erosion state is substantially eroded. wherein tuning the auto capacitance tuner further comprises
9. The method of claim 1, wherein the source material is decreasing the position of the auto capacitance tuner until the
one of titanium (Ti), tantalum (Ta), copper (Cu), cobalt (Co). amount of current measured at the auto capacitance tuner
tungsten (W), or aluminum (Al). equals the predetermined set point value.
10. The method of claim 1, wherein the plasma forming gas
comprises one or more of argon (Ar), helium (He), Xenon 18. The method of claim 12, wherein the source material is
(Xe), neon (Ne), hydrogen (H2), nitrogen (N), oxygen (O). one of titanium (Ti), tantalum (Ta), copper (Cu), cobalt (Co),
11. The method of claim 1, wherein the first amount of RF tungsten (W), or aluminum (Al).
power is about 500 W to about 20,000 W. 19. The method of claim 12, wherein the plasma forming
12. A method of depositing a metal-containing layer atop a gas comprises one or more of argon (Ar), helium (He), Xenon
substrate disposed in a physical vapor deposition (PVD) (Xe), neon (Ne), hydrogen (H), nitrogen (N), oxygen (O).
chamber, comprising:
providing a plasma forming gas to a processing region of 20. A computer readable medium, having instructions
the PVD chamber; stored thereon that, when executed, cause a physical vapor
providing a first amount of RF power to a target assembly deposition (PVD) chamber to perform a method of depositing
disposed opposite the Substrate to form a plasma within a metal-containing layer atop a substrate, the method com
the processing region of the PVD chamber; prising:
sputtering source material from the target assembly to providing a plasma forming gas to a processing region of
deposit a metal-containing layer onto the Substrate, the PVD chamber;
wherein the source material is substantially uneroded at providing a first amount of RF power to a target assembly
a first erosion state; and disposed opposite the Substrate to form a plasma within
tuning an auto capacitance tuner coupled to a substrate
Support while Sputtering source material to maintain an the processing region of the PVD chamber;
ion energy at a Surface of the Substrate within a prede sputtering source material from the target assembly to
termined range as the target erodes from the first erosion deposit a metal-containing layer onto the Substrate,
state to a second erosion state, wherein the Source mate wherein the source material is at a first erosion state; and
rial at the second erosion state is Substantially eroded. tuning an auto capacitance tuner coupled to a substrate
13. The method of claim 12, wherein tuning an auto capaci Support while Sputtering source material to maintain an
tance tuner further comprises comparing a position of the
auto capacitance tuner to a predetermined set point position ion energy at a Surface of the Substrate within a prede
of the auto capacitance tuner. termined range as the target erodes from the first erosion
state to at a second erosion state.
14. The method of claim 13, wherein an amount of ion
energy at the Substrate controlled by the auto capacitance k k k k k