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US005717294A
United States Patent (19) 11 Patent Number: 5,717,294
Sakai et al. [45]. Date of Patent: Feb. 10, 1998
54 PLASMA PROCESSAPPARATUS A6037054 2/1994 Japan.
A 6053177 2/1994 Japan.
75) Inventors: Itsuko Sakai; Makoto Sekine; Keiji WO 92/21136 11/1992 WIPO.
Horioka; Yukimasa Yoshida, all of OTHER PUBLICATIONS
Yokohama; Koichiro Inazawa, Tokyo;
Masahiro Ogasawara; Yoshio Database WPI, Week 8411, Derwent Publications Ltd.,
Ishikawa, both of Koufu; Kazuo London, GB; AN 84-063216 and DD-A-204 109 (Veb Zft
Eguchi, Yamanashi-ken, all of Japan Mikroelectr.), Nov. 1983.
Electronik, vol. 38, No. 3, Feb. 1989, Munchen De, pp.
73 Assignees: Kabushiki Kaisha Toshiba, Kawasaki; 59-62, K. Donohe, “Verbesserungen bein reaktiven Ion
Tokyo Electron Limited, Tokyo; en-atzen'.
Tokyo Electron Yamanashi Limited, Primary Examiner-Robert Pascal
Yamanashi, all of Japan Assistant Examiner-Arnold Kinkead
Attorney, Agent, or Firm-Finnegan, Henderson, Farabow,
|21) Appl. No.: 395,503 Garrett & Dunner, L.L.P.
22 Filed: Feb. 27, 1995 57 ABSTRACT
30 Foreign Application Priority Data A vacuum chamber contains a first electrode for supporting
Feb. 28, 1994 JP Japan .................................... 6-029325 a wafer, and a second electrode opposing the first electrode.
Feb. 22, 1995 JPl Japan .................................... 7-034110 A supply system and an exhaustion system are connected to
the vacuum chamber. The system supplies a reactive gas into
(51 Int. Cl. ............... B23K 10/00; H05H 1/16 the chamber, and the system exhaust the used gas from the
52 U.S. Cl. ................................ 315/111.41; 315/111.21; chamber. A radio-frequency power supply is connected to
219/121.43; 204/298.37; 156/643; 118/723 MR the first electrode, for supplying power between the elec
58 Field of Search ......................... 204/298.16, 298.37, trodes to generate an electric field E. An annular magnet
204/298.2, 298.22, 298.31; 156/345, 643; assembly is provided around the chamber, for generating a
118/50.1, 621, 623, 723 MR; 315/111.41, magnetic field B which has a central plane intersecting with
111.21; 219/1214, 121.43 the electric field E. The magnet assembly has a plurality of
magnet elements which have different magnetization axes in
56 References Cited the central plane of the magnetic field. Electrons drift due to
U.S. PATENT DOCUMENTS a force resulting from an outer product (ExB) of the electric
field E and the magnetic field B. The central plane of the
4,740,268 4/1988 Bukhman ................................ 156/643 magnetic field B is shifted upwards from the target surface
5,444,207 8/1995 Sekine et al. ...................... 219/121.43 of the wafer, such that the magnetic force lines of the
FOREIGN PATENT DOCUMENTS magnetic field intersect with the target surface of the sub
Strate.
O 525 633A1 2/1993 European Pat. Off..
0574 100A2 12/1993 European Pat. Off.. 10 Claims, 17 Drawing Sheets

27 28
U.S. Patent Feb. 10, 1998 Sheet 1 of 17 5,717,294

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U.S. Patent Feb. 10, 1998 Sheet 8 of 17 5,717,294

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U.S. Patent Feb. 10, 1998 Sheet 10 of 17 5,717,294

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U.S. Patent Feb. 10, 1998 Sheet 12 of 17 5,717,294

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U.S. Patent Feb. 10, 1998 Sheet 14 of 17 5,717,294

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U.S. Patent Feb. 10, 1998 Sheet 15 of 17 5,717,294
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U.S. Patent Feb. 10, 1998 Sheet 16 of 17 5,717,294

5nm/min
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F G. 29 C F G. 29 D
U.S. Patent Feb. 10, 1998 Sheet 17 of 17 5,717,294

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F. G. 3 (PRIOR ART)
 5,717,294
1. 2
PLASMA PROCESS APPARATUS impinge on the wall of the chamber, the electrodes and the
wafer). The density of the plasma can thereby be increased.
BACKGROUND OF THE INVENTION As can be seen from the above, the magnetron RIE
1. Field of the Invention
apparatus has excellent operating characteristics and is
employed to process various kinds of thin films. The mag
The present invention relates to a plasma process netic field emanating from the conventional-type magnetis,
apparatus, and more particularly to an etching apparatus for however, non-uniformin intensity. The etching rate is inevi
etching semiconductor wafers, or films formed on semicon tably less constant than desired, or the lines of magnetic
ductor wafers or LCD substrates, a CVD apparatus for force intersect with the surface of the wafer at large angles.
forming films on such substrates, and so forth, which utilize 10 Consequently, ions travel in various directions, making it
magnetron discharge. difficult to accomplish a greatly anisotropic etching.
2. Description of the Related Art To solve this problem it has been proposed to use a
modified magnetron RTE apparatus having a dipole ring
Among the dry etching methods hitherto, used to achieve magnet which generates a magnetic field of uniform inten
micro-processing in the manufacture of semiconductor ele 15 sity (Jpn. Pat. Appln. KOKAIPublication No. 6-53177). The
ments is reactive ion etching (RIE). One type of the RIE dipole ring magnetis an annular member, located so that it
method is magnetron RIE in which a magnetic field is surrounds the target substrate, and has magnet elements
applied to plasma, thereby performing etching at high speed. arranged in a circle. The magnet elements are so oriented
As shown in FIG. 30, the magnetron RIE apparatus has a that the magnetization axes of the magnet elements rotate
vacuum chamber 10, a first electrode (cathode) 11 and a 20
twice in the circle.
second electrode (anode) 12. Both electrodes 11 and 12 are The dipole ring magnet generates a magnetic field whose
located in the vacuum chamber 10. The first electrode 11 intensity and direction are uniform over the broad surface of
functions as a table for supporting a substrate. The second the cathode electrode. Thus, the use of the dipole ring
electrode 12 is arranged, opposing the first electrode 11. magnet solves the above-mentioned problem resulting from
Electric power is applied from a radio-frequency power 25 a non-uniform intensity distribution of the conventional
supply 14 between the cathode 11 and the anode 12 through type magnet. However, the ExB drift, i.e., a key to the
a matching circuit 15 and a capacitor 16, thereby generating generation of high-density plasma and a characteristic fea
a electric field. By virtue of the electric field, plasma is ture of the magnetron RTE method, causes non-uniform
generated in the gap between the electrodes 11 and 12. An distribution of plasma density.
electric field Einduced on the surface of a wafer accelerates 30 FIG. 31 shows a distribution of etching rate in the surface
the reactive ions in the plasma. The reactive ions impinge on of a wafer, which is obtained by one of the structures shown
the wafer, whereby etching on the wafer proceeds. in Jpn. Pat. Appln. KOKAI Publication No. 6-53177. As
In the process of magnetron discharge, a magnet 17 evident from FIG. 31, the etching rate is generally constant
applies a magnetic field B which intersects with the self-bias along the lines of magnetic force (that is, in the N-to-S
electric field Einduced on the surface of the wafer. The lines 35 direction), except for the outer circumferential edges of the
of magnetic force are schematically represented in FIG. 30. wafer. Nonetheless, the etching rate greatly varies along the
Since the electric field E and the magnetic field B intersect E-to-W axis which extends at right angles to the lines of
with each other, the electrons in the plasma can drift in the magnetic force. The difference in etching rate, caused by the
direction W (upwards from the plane of the drawing) by non-uniform distribution of plasma density, can be reduced
Lorentz's force. This drift of electrons is known as "EXB by, for example, rotating the magnet. However, the ion
energy distribution is unavoidably non-uniform due to the
The direction of the ExB drift is a direction in which non-uniform distribution of plasma density. As a
electrons dominantly drifted due to the outer product, EXB. consequence, the center and peripheral parts of the substrate
The electric field E is formed between the bulk of the have different etched shapes after the substrate has been
plasma, which is generated by applying a voltage between 45 etched by magnetron RTE method. Moreover, a difference in
the electrodes 11 and 12, and the wafer which is self-biased. self-bias voltage vdc would do electrostatic damage to the
In other words, the electric field E is formed within the gate oxide film incorporated in a MOS structure. This is a
sheath of the plasma. Due to the radio-frequency power greater problem.
applied between the electrodes 11 and 12, the outer product In Jpn. Pat. Appln. KOKAI Publication No. 6-37054,
ExB periodically changes its direction as the direction of the 50 there is disclosed a system in which a magnetic filed having
electric field E changes. However, the electric field E. an intensity gradient is formed, such that the intensity is
remains directed downwards for a longer time than directed weaker at the W side than the E side, thereby suppressing a
upwards. This is because a negative charge accumulates in deterioration of uniformity of plasma along the E-W axis of
the electrode 11 connected to the radio-frequency power the magnetic field. However, where a magnet is made
supply 14. Hence, the outer product ExB remains directed 55 compact or the dimensions, such as the diameter and height
from the E side toward the W side for a longer time. Thus, thereof, are made small, in order to apply the idea of the
the electrons drift, dominantly from the E side to the W side. publication to a real apparatus, the magnetic field is exces
In the case where a radio-frequency power supply is con sively strong near the edge of a wafer at the N and S sides
nected to the upper electrode, the dominant direction of thereby bringing about high density regions in the plasma.
electron drift is the opposite. When the magnetic field B To achieve high-speed etching, a strong magnetic field
rotates, so does the direction of the ExB electron drift. may be applied, thereby to confine electrons in the plasma
When an electron beam is made to travel in plasma for a more effectively and to raise the plasma density. If a strong
long distance, the beam collides with neutral molecules and magnetic field is applied, however, the non-uniform plasma
atoms more frequently, increasing the density of the plasma. distribution will become more prominent due to the EXB
A magnetic field is applied to the electron beam to confine 65 drift.
the beam in the plasma, thereby to lengthen the lifetime of A method of mitigating the non-uniform plasma distribu
the beam (i.e., the time which lapses until the electrons tion caused by the EXB drift in the magnetron RIE method
 5,717,294
3 4
has been proposed (Nakagawa et al, the Proceedings for the (EXB) of the electric field E and the magnetic field B, the
15th Dry Process Symposium, the Society of Electric magnetic field has a direction in the reference plane, which
Science, Tokyo, 1993, pp. 23-26). This method utilizes a is parallel to the target surface of the substrate supported on
curved magnetic field. In this method, the lines of magnetic the support-surface, and the reference plane of the magnetic
force gradually divert outwards as electrons drift. The elec field is deviated toward the opposing surface of the second
trons therefore diffuse outwards, too, suppressing an electrode, from the target surface of the substrate supported
increase in the plasma density in the direction of drift. As a on the support surface, such that the magnetic force lines of
result, the plasma density is rendered uniform, whereby the the magnetic field intersect with the target surface of the
etching rate and the self-bias potential are made uniform on substrate.
the surface of the wafer. 10 A preferred mode of the first aspect of the invention is as
In this method, the curved magnetic field is generated by follows:
changing the orientations of the N-pole and S-pole magnets (1) The reference plane of the magnetic field intersects
which are located on the sides of a vacuum chamber, with the electric field substantially at right angle.
respectively. The orientations of the N- and S-pole magnets 15 (2) Arelation of 3' 40zoo, o<8 holds, where 021oo.o.
can not be adjusted with high accuracy. It is difficult to is an angle at which the magnetic force lines of the
generate a magnetic field whose intensity distribution is magnetic field intersect with the target surface of the
optimal to the actual plasma density gradient. The method of substrate at a distance of 100 mm from the center of the
applying a curved magnetic field is not so advantageous and substrate, measured along the N-S axis of the magnetic
cannot be applied widely. Since a pair of magnets which are field.
oriented in the same direction are used, the leakage magnetic (3) A relation of 1.1 sBoo/Bc s1.3 holds, where Bc
field is large, unlike in the modified magnetron RIE appa and Boo, o are intensities which the magnetic field
ratus having a dipole ring magnet which surrounds a target has at coordinates (0, 0) and (+100, 0), respectively, in
substrate and which has magnet elements so oriented that the coordinate systems (x, y) on the target surface of the
magnetizing axes of the magnet elements rotate twice in a 25
substrate, the coordinate systems (x, y) being defined
circle. The method of applying a curved magnetic field is too with distances (mm) measured from the center of the
problematical to employ in practice. target surface of the substrate in directions parallel to
As described above, the conventional magnetron RTE the N-S and E-W axes, respectively, of the magnetic
apparatus can certainly render the magnetic field distribution field.
extremely uniform on the surface of the wafer or within the 30 (4) Arelation of 1.0 sBoo/B0,y) is 1.5 holds, where
vacuum chamber. However, the density of the plasma gen Bo, and Boo, are intensities which the magnetic
erated in the chamber is inevitably non-uniform due to the field has at coordinates (0, y) and (+100, y),
ExB drift of electrons. There is a demand for a method of respectively, in coordinate systems (x,y) on the target
readily eliminating any plasma-density difference and any surface of the substrate, the coordinate systems (x, y)
potential difference on the wafer surface. The problem 35 being defined with distances (mm) measured from the
pointed out above is inherent not only in an etching process, center of the target surface of the substrate in directions
but also in a process of forming thin films by utilizing parallel to the N-S and E-W axes, respectively, of the
magnetron discharge. magnetic field.
SUMMARY OF THE INVENTION
(5) A conductive or semiconductive guard ring is used for
surrounding the substrate in fitting fashion. The guard
In view of the foregoing, it is the object of the present ring has a surface exposed to the process space and
invention to provide a plasma process apparatus which can aligned with the target surface of the substrate.
perform a process uniformly on the entire surface of the (6) Means is provided for rotating the magnetic field in a
target surface of a substrate. plane parallel to the target surface of the substrate.
According to the invention, there is provided an apparatus 45 (7) The magnetic field has such an intensity distribution
for processing a target Surface of a substrate, while using that the intensity decreases in the direction in which
plasma, comprising: a vacuum chamber for defining a pro electrons drift due to the outer product ExB.
cess space in which the substrate is contained and processed; (8) Arelation of -0.6s (Bro-Bo)/(Boxy) s-0.4 holds
a Supply system for introducing into the vacuum chamber a when -100sysO, and a relation of -0.4s (Bro.
gas to be made into plasma; an exhaustion system for 50 -Bo)/(Boxy) s-0.3 holds when Osy s100, where y
exhausting the vacuum chamber; a first electrode located is a coordinate (mm) on the target surface of the
within the vacuum chamber and having a support surface for substrate, measured from the center thereof along the
Supporting the substrate such that the target surface is direction of drift, and Bo and Bro. are intensities
exposed to the process space; a second electrode having an which the magnetic field has at positions in the refer
opposing surface which opposes the support surface of the 55 ence plane, which correspond to the center of the target
first electrode; a power supply for applying a voltage surface, and the coordinate y, respectively. According
between the first and second electrodes, thereby to make the to the present invention, a magnetic field is generated
gas into plasma, and to form an electric field E which in the vacuum chamber. The reference plane of the
extends substantially at right angles to the target surface of magnetic field is shifted toward the surface of the
the substrate supported on the support surface between the opposing surface, with respect to the target surface of
Substrate and the plasma; a magnet assembly for generating the substrate supported on the support surface. The
a magnetic field B having a reference plane which intersects magnetic force lines of the magnetic field intersect with
with the electric field between the first and second electrode, the target surface of the substrate. The non-uniform
wherein the magnet assembly has a plurality of magnet plasma distribution occurring at the N- and S-pole sides
elements which have different magnetization axes and are 65 can be mitigated. Hence, plasma greatly uniform in
arranged along outer side surfaces of the vacuum chamber, intensity can thereby be maintained on the entire target
electrons drift due to a force resulting from an outer product surface of the substrate.
 5,717,294
5 6
According to the present invention, a magnetic field may FIGS. 11A and 11B are diagrams showing modified
be generated, whose intensity decreases in the direction in magnet assemblies which generates a magnetic field having
which electrons drift due to the outer product ExB. The an intensity gradient;
non-uniform distribution of plasma density can thereby be FIGS. 12A and 12B are diagrams showing other modified
mitigated, to maintain uniform, high-density plasma on the magnet assemblies which generates a magnetic field having
entire target surface of the substrate. an intensity gradient;
Therefore, in this invention a plasma potential and a FIGS. 13A to 13E are perspective views of various
self-bias voltage, both uniform in magnitude, can be applied magnet elements;
onto the target surface of a substrate. The target surface of FIG. 14 is a side view of a mechanism for adjusting the
the substrate can therefore be uniformly surface-processed. O orientation of a magnet element;
For example, highly anisotropic etching can be performed FIG. 15 is a plan view of a mechanism for adjusting the
on the substrate, without doing electrostatic damage to the distance of a magnet element from the magnet center;
target surface of the substrate. The present invention may FIG. 16 is a side view of the mechanism shown in FIG.
use a plurality of magnet elements arranged in a circle, 15;
which constitute a means for generating a magnetic field. 15 FIG. 17 is a schematic diagram showing a magnetron RIE
The magnetic-field generating means can be minutely con apparatus according to a second embodiment of the present
trolled to adjust the distribution of the magnetic field to the invention;
actual plasma density distribution. In addition, there is little FIG. 18 is a diagram showing how magnet elements are
stray magnetic field outside the magnet assembly. The arranged, constituting an annular magnet assembly in the
plasma process apparatus according to the invention is 20 apparatus of FIG. 17;
suitable for practical use. FIG. 19 is a diagram showing the calculated orbits in
Additional objects and advantages of the invention will be which electrons travel in a plane of a magnetic field having
setforthin the description which follows, and in part will be no intensity gradient, which is remote from and parallel to
obvious from the description, or may be learned by practice the central plane of the magnetic field;
of the invention. The objects and advantages of the invention 25 FIG. 20 is a diagram depicting the etching-rate distribu
may be realized and obtained by means of the instrumen tion on the surface of a wafer, observed when the wafer was
talities and combinations particularly pointed out in the etched by the apparatus shown in FIG. 17;
appended claims. FIG. 21 is a diagram showing how the etching rate
distribution and the electrostatic damage to devices formed
BRIEF DESCRIPTION OF THE DRAWINGS 30 on a wafer depends upon the mirror ratio measured along the
The accompanying drawings, which are incorporated in N-S axis and the angles of magnetic force lines to the wafer;
and constitute a part of the specification, illustrate presently FIG. 22 is a diagram depicting the etching-rate
preferred embodiments of the invention, and together with distribution, observed when a wafer is etched, while the
the general description given above and the detailed descrip central plane of a magnetic field having an intensity gradient
tion of the preferred embodiments given below, serve to 35
is kept aligned with the target surface of the wafer;
explain the principles of the invention. FIG. 23 is a diagram depicting the etching-rate
FIG. 1 is a schematic diagram showing a magnetron RIE distribution, observed when a wafer is etched, while the
central plane of a magnetic field having an intensity gradient
apparatus according to a first embodiment of the present is shifted from the target surface of the wafer;
invention; FIG. 24 is a view showing the intensity lines in the central
FIGS. 2A and 2B are sectional views for explaining steps plane of a magnetic field formed by a magnet, which is used
of etching a polysilicon film; for confirming an effect of the combination of an intensity
FIG. 3 is a diagram showing how magnet elements are gradient and an upward sift of the central plane of a
arranged, constituting an annular magnet assembly in the magnetic filed;
apparatus of FIG. 1; 45 FIG. 25 is a graph showing the intensity gradient of the
FIG. 4 is a graph illustrating how the magnetic field magnetic field shown in FIG. 24;
generated by the magnet assembly is distributed at the FIG. 26 is a graph showing the distribution of a mirror
surface of a wafer, along the N-S and E-W axes; ratio of the magnetic field shown in FIG. 24;
FIG. 5 is a diagram showing the isointensity lines, rep FIG. 27 is a schematic plan view of the magnet assembly
resenting the distribution of the magnetic field at the surface 50 incorporated in a magnetron RTE apparatus according to a
of the wafer; third embodiment of the invention;
FIG. 6 is a diagram depicting the etching-rate distribution FIG. 28 is a schematic side view of the magnet assembly
on the surface of a wafer, observed when the wafer was illustrated in FIG. 27:
etched by a conventional apparatus; FIGS. 29A to 29D are diagrams illustrating the results of
FIG. 7 is a diagram depicting the etching-rate distribution 55 experimental etching performed to demonstrate the advan
on the surface of a wafer, observed when the wafer was tages of the magnetron RIE apparatus according to a third
etched by the apparatus shown in FIG. 1; embodiment;
FIG. 8 is a graph representing the relation between the FIG. 30 is a schematic representation of a conventional
magnetic field distribution in the direction of the ExB drift magnetron RIE apparatus; and
and the degree of electrostatic damage to elements formed FIG.31 is a diagram showing the etching-rate distribution
on a wafer; on the surface of a wafer etched by another conventional
FIG. 9 is a diagram showing the calculated trajectories of magnetron RIE apparatus.
electrons which travel in the central plane of a uniform
magnetic field; DETALED DESCRIPTION OF THE
FIG. 10 is a diagram showing the calculated trajectories 65 PREFERRED EMBODIMENTS
of electrons which travel in the central plane of a magnetic FIG. 1 schematically shows a magnetron RTE apparatus
field having an intensity gradient; according to the first embodiment of the invention.
 5,717,294
7 8
A first electrode (cathode) 11 is located within a vacuum At this time, the annular magnet assembly 30 is rotated at 20
chamber 10, for supporting a wafer (a target substrate) 13. rpm. The gas is exhausted by a vacuum pump through the
The top wall of the chamber 10, which opposes the first exhaustion system 23. The conductance valve incorporated
electrode 11, functions as a second electrode (anode) 12. in the exhaustion system 23 is adjusted to change the
Electric power is applied between the electrodes 11 and 12 pressure in the chamber to 25mTorr. Under these conditions,
from a radio-frequency power supply 14 through a matching the gas is made into plasma, and the silicon film 102 is
circuit 15 and a capacitor 16. An annular magnet assembly etched as shown in FIG. 2B.
30 is provided outside the chamber 10, for generating a The etching is continued for a predetermined time to etch
magnetic field extending parallel to the surface of the wafer the target part of the polysilicon film 102 entirely. Then, the
13. 10 radio-frequency power supply 14 is turned off, the supply of
A reactive gas is supplied into a space in which the the etching gas is stopped, and the residual gas is exhausted
electric field generated from the electric power applied from the vacuum chamber 10. Thereafter, the wafer 13 is
between the electrodes 11 and 12 intersects with the mag removed from the chamber 10, using the load-lock mecha
netic field generated by the annular magnet assembly 30 and 15
nism.
extending parallel to the surface of the wafer 13. When FIG. 3 shows how the 16 magnet elements 31 of the
electrode discharge is effected, the gas is made into plasma magnet assembly 30 are arranged. The magnet elements 31
in this space. The ions in the plasma are accelerated by the are magnetized in the horizontal direction at right angles to
electric field induced on the surface of the wafer 13. The ions their longitudinal axes to the same magnitude. They are
thus accelerated impinge upon the target surface of the wafer located at the same distance from the center of the wafer, i.e.,
13. The wafer 13 is thereby etched at the target surface. the target substrate, and spaced apart by the same angle O.
The first electrode 11 which serves as a table for support (22.5° pitch). The arrow 32 shown in FIG. 3 indicates the
ing the substrate is hollow. Cooling liquid is supplied into direction in which the magnetic force lines extend in each
the hollow through a pipe 21, and drained from the hollow magnet element 31. The head and tail of the arrow 32 are N
through a pipe 21, thus efficiently controlling the tempera 25
pole and Spole, respectively. The annular magnet assembly
ture of the substrate placed on the first electrode 11. The 30 is positioned so that the central or reference plane
reactive gas is supplied into said space by a supply system connecting the N and Spoles of the horizontal magnetic field
22, and the used gas is exhausted by an exhaustion system virtually coincides with the target surface of the substrate.
23. The sides and bottom of the first electrode 11 are covered The axis perpendicular to the central plane of the magnetic
with an insulating layer 24. A guard ring 25 is mounted on 30
field passes the center of the wafer (i.e., the target object).
the first electrode 11, surrounding in fitting fashion the wafer The magnetization axes of the magnet elements 31a to
13 placed on the first electrode 11. The ring 25 is made of 31p arranged in a regular circle are inclined to the N-S axis
a material selected from the group consisting of ceramics by an angle B of 0°, 45°, 90°, 135°, 180°, 2259,270°, 315°.
such as SiC. alumina, AlN, BN and the like, carbons of 0°, 45°, 90°, 0°, 0°, 0°, 270°, and 315°, respectively. Of the
various structures, Si, organic substances, metals and alloys. 35 magnet elements 31a to 31p, the magnet elements 31a to
The material is selected in accordance with the film to be 31k, 31o and 31p are arranged such that the magnetization
etched and the reactive gas used. axes change their orientation step by step at constant angles
The magnet assembly 30 has 16 magnet elements which to cooperate with each otherfor forming the dominant N and
are rod-shaped permanent magnets and which are arranged S poles of the annular magnet assembly 30. The three
in a regular circle, as will be described later in detail. The magnet elements 31 to 31n on the W-pole side are posi
magnet assembly 30 is rotated around the vacuum chamber tioned to weaken the above-mentioned dominant magnetic
10 when it is driven by an electric motor 27. The assembly field.
30 is moved up and down when it is driven by a drive FIG. 4 illustrates how the magnetic field generated by the
mechanism. 28. To transfer the wafer 13 into or from the magnet assembly 30 is distributed along the N-S and E-W
vacuum chamber 10, the magnet assembly 30 is lifted to the 45 axes, both passing the center of the wafer. FIG. 5 shows the
position indicated by the broken lines in FIG. 1. Then, the distribution of the magnetic field at the surface of the wafer.
wafer is transferred through a gate valve 26 into or out of the The curves shown in FIG. 5 are isointensity lines. As clearly
chamber 10, using a load-lock mechanism (not shown) and seen from FIGS. 4 and 5, the magnetic field has intensity of
a transfer mechanism (not shown). 200 Gauss (G) at the center of the wafer. It is also evident
Amethod in which the apparatus of FIG. 1 is used to etch 50 that the magnetic field has an intensity gradient which is
a polysilicon film provided on a thin oxide film will now be +40% and -30% of the intensity at the wafer center, along
explained. the E-W axis which extends perpendicular to the axis of the
First, as shown in FIG. 2A, a thin silicon oxide film 101 magnetic field (i.e., the N-S axis).
having a thickness of 10 nm is formed on a surface of a As indicated above, the magnetic field generated by the
silicon wafer 100, and a polysilicon film 102 is formed on 55 annular magnet assembly 30 has an intensity gradient along
the silicon oxide film 101. Further, a resist pattern 103 is the E-W axis, and is substantially uniform in both intensity
formed on the polysilicon film 102, so that a target object is and direction along the other axis. The degree of electron
completed. The target object is transferred into the vacuum confinement can be adjusted in the direction of the ExB
chamber 10 and placed onto the first electrode 11, using the drift, and the plasma density can be made uniform on the
load-lock mechanism and the transfer mechanism. The tar target surface of the wafer, without suppressing an increase
get is secured to the first electrode 11 by an electrostatic in the plasma density induced by the ExB drift. That is, as
chuck (not shown). the electrons, which have been confined by the intense side
Then, the vacuum chamber 10 is evacuated by the exhaus of the magnetic field, drift in the direction of ExB drift, they
tion system 23 to about 10 Torr. Chlorine gas is introduced enter the less intense side of the intensity of the magnetic
by the supply system 22 at the rate of 100 cc/min. A radio 65 field, so that the degree of electron confinement and the
frequency power of 13.56 MHz and 250 W is applied speed of the electron drift are reduced. When the degree of
between the first electrode 11 and the second electrode 12. electron confinement is reduced, the electrons diffuse from
 5,717,294
9 10
the sheath region right above the wafer into bulk plasma. As the same manner as has been explained with reference to
aresult of this, the increase of density, caused by the electron FIGS. 2A and 2B. Dust-free carbon rings having a thickness
drift, is canceled out, whereby the plasma density becomes of 3mm were used as guard rings 25. The top of each carbon
uniform. ring used was located at a level 2 mm below the target
The mean values of the characteristics of this magnetron Surface of the wafer.
RIE apparatus, such as plasma density and self-bias voltage, As evident from FIG. 6 showing the results of the etching
are similar to those of a magnetron RTE apparatus which has performed in the uniform magnetic field, the increase in
a conventional annular magnet assembly. plasma density, caused by the ExB drift, depends on the
An annular magnet assembly 30 of the type shown in FIG. distanced (FIG. 6) for which the electrons have drifted from
10 the edge of the wafer. Hence, the isointensity lines of the
3 was used, setting the intensity of the central magnetic field
at the value of 200 Gauss. Further, the central plane of this magnetic field are arcuate, strongly reflecting the circum
magnetic field was rotated, while aligned with the target ferential shape of the wafer. Therefore, as shown in FIG. 5,
surface of a wafer. In these conditions, a polysilicon film the magnetic field was slightly intensified at that circumfer
provided on a thin oxide film was etched as has been ential portion of the wafer, on the high-intensity side of the
15 magnetic field. As a result, as shown in FIG. 7, the unifor
explained with reference to FIGS. 2A and 2B. The etching
rate was 320 mm/min at the centerpart of the wafer, and the mity of etching rate over the target surface of the wafer
uniformity of etching rate over the target surface of the increased from +20% to t12% as is evident from FIG. 7,
wafer was as high as +2%. Since the plasma per se is even when the central plane of the magnetic field was not
uniform in terms of density, no disturbance occurred in the rotated.
20
direction in which ions moved. The target surface of the Due to the manner of the electron drift and the circum
wafer was processed in its entirety. No damage to the silicon ferential shape of the wafer, the gradient of plasma density
oxide film 101 (the underlayer) was observed. is greatest at the E side. It follows that the plasma density is
As different conditions, a magnetic field having an inten apt to be lowest at the E side. It is therefore advantageous to
sity gradient was formed with the annular magnet assembly 25
generate a magnetic field which is most intense at the E side
30 such that intensities at E and W side positions having and least intense at the W side. Based on the results of the
distance of 100 mm form the center of a wafer were +57% experiments the present inventors conducted, it was found
and -33%, respectively, in relation to a central intensity of most desired that the magnetic field be 20 to 100% more
90 Gauss. With this magnetic field, an etching process was intense at the wafer edge on the Eside than at the central part
carried out, as has been explained with reference to FIGS. 30
of the wafer, and be 0 to 50% less intense at the wafer edge
2A and 2B, at pressure of 75 mTorr and radio-frequency on the w side than at the central part of the wafer,
power of 200W, while supplying HBr process gas at flow It will now be explained how a magnetic field must be
rate of 200 SCCM. As a result, the etching rate was as very distributed in the direction of ExB drift in order to prevent
much uniform as 220 mm/min +1.5%. electrostatic damage of the device formed in the wafer,
To etch the silicon oxide film, it is advisable to used gas 35 particularly the electrostatic damage of the gate oxide film
containing, for example, fluorocarbon (CF). In order to incorporated in a MOS structure.
achieve orienting process on a resist, gas consisting mainly To improve both the etching rate and the etching ratio
of oxygen may be utilized. To etch a film of aluminum, which are applied in a etching process for forming a contact
tungsten, or the like to form wiring, gas consisting chiefly of hole in an oxide film, the degree of dissociation of the
chlorine may be applied. Using the apparatus according to etching gas, as well as the energy of ions, must be optimized.
this embodiment, a resist or a wiring layer on a wafer was In view of this, it is desirable to set the intensity of the
etched with a high-performance process which did no dam magnetic field at about 120 Gauss. The inventors conducted
age to the wafer surface and which excelled in shape con an experiment in which the magnetic field was set at an
trollability. In view of this, the present invention is proved intensity of 100 to 140 Gauss at its central part and distrib
to be advantageous. 45 uted the magnetic field in various ways, thereby performing
The desirable distribution of magnetic field intensity, a breakdown test on MOS capacitors.
which the annular magnet assembly 30 of FIG. 3 should In this experiment, a number of MOS capacitors, each
accomplish, will now be explained in detail. having a gate oxide film of 8 nm thick and an electrode
FIG. 6 shows the etching-rate distribution on the surface having an antenna ratio of 300,000, were formed in a thick
of a wafer, observed when a polysilicon film on the wafer 50 field oxide film provided on an 8-inch wafer. The wafer, i.e.,
was etched by a conventional magnetron RTE apparatus. the target substrate, was located in a vacuum chamber, and
FIG. 7 depicts the etching-rate distribution on the surface of the silicon oxide film was etched for 30 seconds at pressure
a wafer, observed when a polysilicon film on the wafer was of 40 mTorr and radio-frequency power of 2 kW, while
etched by the magnetron RIE apparatus of FIG. 1. In these supplying CF/CO/Ar process gas at flow rate of 10/50/200
processes, a silicon oxide film of 1 m thickness formed on 55 SCCM. Then, 298 MOS capacitors on the wafer were
the entire surface of a silicon substrate was etched at examined as to breakdown voltage.
pressure of 40 mTorr and radio-frequency power of 2 kW. The results were as shown in FIG. 8. Plotted on the
while supplying CF/CO/Ar process gas at flow rate of abscissa is a distancey from the center of the magnetic field
10/50/200 SCCM. The annular magnet assembly used in the which coincided with the center of the wafer, measured in
conventional RIE apparatus generated a uniform magnetic the direction of the ExB drift (i.e., along the E-W axis, the
field, whereas the annular magnet assembly 30 shown in E side being minus). Plotted on the ordinate is a relative
FIG. 3 generated a magnetic field having an intensity intensity LV. The intensity LV is given as: LV=(Bo-Bo)
gradient. In the experiment, the intensity of the central /Bo, wherein Bois the intensity which the magnetic field has
magnetic field was set at the value of 120 Gauss, and the at its center and the center of the wafer, and Bo. is the
central plane of the magnetic field was not rotated and was 65 intensity which the magnetic field has at the coordinates (0,
aligned with the target surface of a wafer. In these y). The forward directions of X, Y and Z axes are defined as
conditions, polysilicon films were etched for 3 minutes in a direction from the S side to the Nside, a direction from the
 5,717,294
11 12
E side to the w side, and a direction upward from the plane and 12B show the arrangement of magnet elements 31 and
of the drawing, hereinafter. the magnetizing axes of the elements 31 employed in other
The shaded part in FIG. 8 indicates an optimal region modified magnet assemblies.
where no insulation breakdown took place. In other regions The annular magnet assembly of FIG. 12A has magnet
where the magnetic field had a smaller intensity gradient elements 31, which generate magnetic fields of the same
than in the optimal region, insulation breakdown was intensity, are located at the same distance from the center of
observed to have happened on the W side as is indicated by a wafer, and are spaced apart from the S-pole side by angles
lines C1 and C2. In the other regions where the magnetic or of 0°, 45°, 90°, 135° and 180°, respectively, in the
field had a larger intensity gradient than in the optimal counterclockwise direction. Namely, this annular magnet
region, insulation breakdown was found to have occurred on 10 assembly has been manufactured by removing three of the
the E side as is indicated by line C6. magnet elements used in a fundamental 8-element dipole
It was also examined how the self-bias potential Vdc was ring magnet, which are spaced apart from the S-pole side by
distributed on the surface of the wafer. Where the conven angles o. of 225°, 270° and 0°. The magnet elements 31 are
tional dipole ring magnet generating a uniform magnetic arranged such that their magnetization axes are inclined at
field was used, the absolute value of the potential Vdc was 15 angles B of 0°, 90°, 180°, 270° and 0°, respectively, as
large in the negative polarity at the E side than the W side, indicated by arrows 32. The annular magnet assembly of
and the potential difference between the maximum and FIG. 12A is identical to the assembly of FIG. 3 in any other
minimum was 40W within a diameter of 200 mm. As the aspect.
magnetic field gradient grew stronger, the potential differ With the annular magnet assembly shown in FIG. 12A, a
20 magnetic field was formed such that its intensity decreased
ence decreased, and became uniform up to 12V or less in an
optimum range obtained with the experiment. Where the from the E side to W side (in the direction of ExB drift).
potential difference is small, it is possible to prevent the Although this annular magnet assembly has less magnet
insulation breakdown. In contrast, where the intensity gra elements, it can generate a magnetic field having an appro
dient was excessively strong beyond the optimum range the priate intensity gradient while maintaining the intensity
25 thereof.
potential Vdc was large at the w side than the E side to
increase the potential difference on the wafer, and an insu The annular magnet assembly of FIG. 12B has magnet
lation breakdown was observed. elements 31, which generate magnetic fields of the same
Let us express the above-mentioned optimal region as intensity, are located at the same distance from the center of
LV=ay, whereina is the coefficient for the intensity gradient. 30
a wafer, and are spaced apart from the S-pole side by angles
Where -100 mm sys0 mm, it is defined that -0.6sa or of 0°, 45°, 90°, 135°, 180° and 270°, respectively, in the
s-0.4, and where -0mm sys100mm, it is defined that counterclockwise direction. The magnet elements 31 are
-0.4 sa s-0.3. Either alternative condition is proved arranged such that their magnetization axes are inclined at
applicable at pressure ranging from 30 mTorr to 100 mTorr, angles B of 0°, 90°, 180°, 270°, 0° and 270°, respectively, as
which is the pressure range generally applied to magnetron 35
indicated by arrows 32. The annular magnet assembly of
RIE method. FIG. 12A is exactly the same as the assembly of FIG. 3 in
Since the intensity gradient of the magnetic field is set any other aspect.
within the above-mentioned optimal region, it is possible not With the annular magnet assembly shown in FIG. 12B, a
only to adjust the degree of electron confinement attained by magnetic field was formed such that its intensity decreased
applying the magnetic field, but also to moderate the con from the E side to w side (in the direction of ExB drift).
centration of electron orbits (i.e., the increase in plasma Since the magnetic fields, which the individual elements 31
density) on the W side. This was confirmed by the calculated generate, are set to cancel each other in relation to the
orbits in which electrons drift from the E side to the W side outside, the leak of the magnetic field outside the apparatus
in the central plane of the horizontal magnetic field. These is suppressed.
orbits were calculated by simulation using an apparatus 45 The magnet elements 31 need not generate magnetic
having a dipole ring magnet which has a height of 150 mm fields of the same intensity. For example, the magnet ele
and an outer diameter of 530 mm and which is designed to ment located at the intense field side, i.e., the E side, may be
apply a magnetic field to a wafer having a diameter of 200 designed to generate a more intense magnetic field than the
mm. FIG. 9 shows the calculated trajectories of electrons other magnet elements. To this end, the magnet element at
traveling in the central plane of a uniform magnetic field. 50 the E side may either be larger than the other elements or be
FIG. 10 is illustrates the calculated trajectories of electrons made of more magnetic material.
traveling in the central plane of a magnetic field having the Each magnet element 31 may be changed in various ways
intensity gradient indicated by line C4 in FIG. 8. to generate a less intense magnetic field or a more intense
The annular magnet assembly 30 shown in FIG.3 has 16 magnetic field. For instance, a magnetic element 31 shown
magnet elements 31. Nonetheless, it may be constituted by 55 in FIG. 13A may be processed into one 31 shown in FIG.
12 magnet elements as illustrated in FIG. 11A, or eight 13B which is reduced in thickness measured along its
magnet elements as exemplified in FIG. 11.B. Whether the magnetizing axis. Alternatively, the element 31 of FIG. 13A
assembly 30 comprises 16, 12 or 8 magnet elements, it can may be processed into one 31 shown in FIG. 13C which is
generate a magnetic field whose intensity gradually reduced in length. Further, the element 31 shown in FIG.
decreases from the E side toward the W side. In each of the 13Amay be cut into two pieces which are located one above
magnet assemblies of FIGS. 11A and 11B, one of the magnet the other, as illustrated in FIG.13D. Still further, the element
elements, i.e., the element 31i, is magnetized in such a 31 of FIG. 13A may be cut into three pieces which are
direction as to weaken the dominant magnetic field gener positioned one above another, as illustrated in FIG. 13E.
ated in the annular magnet assembly. Particularly, in the case of the two-piece magnet element
The intensity gradient for a magnetic field can be obtained 65 31, the gap between the magnet pieces may be changed,
by changing the intervals at which the magnet elements are thereby to adjust the mirror ratio, i.e., the ratio of the
spaced apart from one another. In this respect, FIGS. 12A intensity of the magnetic field applied to the center of a
 5,717,294
13 14
substrate to the intensity of the magnetic field applied to the FIG. 17 is a schematic diagram showing a magnetron RIE
circumference of the wafer, near which the magnet element apparatus according to the second embodiment of the inven
31 is located. As described above, the intensity of the tion. The components of this apparatus, which are similar or
magnetic field decreases from the E side toward the W side, identical to those shown in FIG. 1 are designated at the same
and the mirror ratio is adjusted, so that the annular magnet 5 reference numerals in FIG. 17 and will not be described in
assembly can help to generate plasma more uniform in detail.
density. In the conventional magnetron RTE apparatus in general
In any annular magnet assembly described above, the use, where a magnet, such as an annular magnet assembly,
magnet elements are located at the same distance from the is provided around a vacuum chamber for generating a
center of the wafer. Instead, the magnet elements on the O horizontal magnetic field, the central plane of the magnetic
intense side of the magnetic field (i.e., the E side) may be field, in which all the lines of magnetic force extend at right
located closer to the center of the wafer than the other angles to the vertical axis of the magnet, is arranged in
magnet elements. Each magnet assembly described above alignment with the target surface of a wafer. In this case, if
has features for generating a magnetic field whose intensity the target surface of the wafer is not aligned with the top of
decreases in the direction of ExB drift. Some features on one 15 the guard ring, the distribution of plasma density will be
assembly may be combined with some features of another greatly affected not only by the drift of electrons, but also by
assembly. More specifically, any number of magnet ele the wafer edges at the E, N and S sides as shown in FIG. 6,
ments may be magnetized in desired directions, may be inevitably decreasing the uniformity of etching rate over the
arranged at suitable intervals, may generate magnetic fields target surface of the wafer. Conversely, if the target surface
of proper intensities, and may be located at appropriate 20 of the wafer is aligned with the top of the guard ring, the
distances from the center of the wafer, so that they cooperate plasma density will become too high at the N-pole and
to generate a magnetic field which has a intensity distribu S-pole sides, reducing the uniformity of etching rate over the
tion best for an etching process. target surface of the wafer, on the condition that the diameter
of the magnet is not so big in relation to that of the wafer,
According to the invention, the distribution of the mag 25 and the mirror ratio of the intensity at the peripheral part of
netic field can be controlled by adjusting the orientations of the magnet to that at the center is large.
the magnet elements 31. FIG. 14 shows a mechanism for The magnetron RIE apparatus of FIG. 17 is designed to
adjusting the orientation of each magnet element. maintain the uniformity of etching rate over the target
As shown in FIG. 14, each magnet element 31 is set in a surface of a wafer in consideration of these problems. As
magnet case 41. The case 41 has an upper shaft and a lower 30 shown in FIG. 17, the guard ring 25, surrounding a wafer 13
shaft which protrude outwards from the opposite sides. The in fitting fashion, is located with its top aligned with the
upper shaft is inserted in a bearing section 44 secured to an target surface of the wafer 13. Further, the annular magnet
upper frame 42, and the lower shaft in a bearing section 45 assembly 30M is positioned such that the horizontal mag
secured to a lower frame 43, so that the magnet element 31 netic field generated by the assembly 30M has its central
can be rotated freely. The upper shaft is coupled at its upper 35 plane shifted above the target surface of the wafer 13. This
end to a reduction-gear mechanism 46. The mechanism 46 is an important point, which renders the etching rate uniform
is fastened to the upper frame 42 and has a reduction ratio over the entire surface of the wafer 13. Namely, the unifor
of 40:1. The magnet element 31 can be oriented in a desired mity of etching rate over the target surface is enhanced due
direction by the mechanism 46. to the upward shift of the central plane of the magnetic field,
A magnetron RIE apparatus having means for controlling not due to the intensity gradient of the magnetic field as in
the distribution of the magnetic field can be minutely the first embodiment (FIG. 1). Although the magnet assem
adjusted to compensate for any change in the electron drift, bly 30 is designed to form a magnetic field having a uniform
which may occur when the radio-frequency power, the gas intensity distribution, an intensity gradient of the magnetic
pressure, the type of gas an the like are altered to meet field as mentioned in the apparatus shown in FIG.1 may be
requirements for the best possible etching process. Such a 45 used in addition to the upward shift of the central plane of
magnetron RIE apparatus can therefore perform a high the magnetic field.
precision processing. FIG. 18 is a diagram showing how 16magnet elements 31
Moreover, as shown in FIGS. 15 and 16amechanism may are arranged, constituting the annular magnet assembly
be provided for moving the element 31 toward and away 30M. The magnet elements 31 are magnetized in the hori
from the center of the wafer, thereby to change the distance 50 Zontal direction at right angles to their longitudinal axes to
between the magnet element 31 and the center of the wafer the same magnitude. They are located at the same distance
and, ultimately, to minutely adjust the distribution of the from the center of the wafer, i.e., the target substrate, and
magnetic field. In FIGS. 15 and 16, this mechanism com spaced apart by the same angle O, (22.5 pitch). The arrow
prises two slits 47 made in an upper frame 42 and a lower 32 shown in FIG. 18 indicates the direction in which the
frame 43, respectively, and fastening nuts 48a to 48d. The 55 magnetic force lines extend in each magnet element 31. The
both slits 71 extends in radial direction of the annular head and tail of the arrow 32 are N pole and Spole,
magnet assembly. The orientation-adjusting mechanism and respectively. The annular magnet assembly 30 is positioned
the distance-adjusting mechanism described above may be so that the central or reference plane connecting the N and
combined. Spoles of the horizontal magnetic field is shifted above the
As has been explained, the plasma process apparatus target surface of the substrate.
according to the first embodiment of the invention is char The magnetization axes of the magnet elements 31a to
acterized in that a magnetic field is generated whose inten 31p arranged counterclockwise, in a circle, are inclined to
sity decreases in the direction in which electrons drift due to the N-S axis by an angle B of 0°, 45°, 90°, 135°, 180°, 225°,
the outer product ExB. With this apparatus, the non-uniform 270°, 315°, 0°, 45°, 90°, 135°, 180°, 225, 270°, and 315°,
distribution of plasma density can thereby be mitigated, and 65 respectively, such that they change their orientation step by
high-density plasma can thus be maintained on the entire step at constant angles. In other words, any two magnet
target surface of the substrate. elements arranged diametrically opposite to each other are
 5,717,294
15 16
magnetized in the same direction, and hence cooperate to wherein distributions of etching rate on wafers and electro
form the N and Spoles which are dominant in the annular static damages to wafers were examined by varying the
magnet assembly 30M. mirror ratio Roo.o. (=Boo. of Bc) along the N-S axis and
Since the central plane of the horizontal magnetic field is the intersection angle 02-ooo of the magnetic force line.
located above the target surface of the wafer 13, the lower 5 Here, Bc is the intensity the magnetic field has at the center
parts of U-shaped lines of magnetic force pass through the of the target surface of the wafer, Boo, o is the intensity
target surface of the wafer 13. The trajectories of electrons the magnetic field has at the coordinate of 100 (mm) from
drifting due to outer product ExB curve outwards as they the center of the target surface, as measured along the N-S
approach the N and S sides of the wafer 13. This is because axis. The intersection angle 62 oo, o is one at the coordi
the vertical component of the magnetic field provides the 10 nates (100, 0) on the target surface.
electrons with an outward force while they are drifting under In this experiment, a number of MOS capacitors, each
Larmor motion. To ascertain the mechanism of moving the having a gate oxide film of 8 nm thickness and an electrode
electrons, the orbits of the electrons drifting from the E side having an antenna ratio of 300,000, were formed in a thick
toward the W side were calculated through simulation using field oxide film provided on an 8-inch wafer. The wafer, i.e.,
an apparatus having a dipole ring magnet which has a height 15 the target substrate, was located in a vacuum chamber, and
of 150 mm and an outer diameter of 530 mm and which is a process, imaging an over etching during formation of
designed to apply a magnetic field to a wafer having a contact holes in the silicon oxide film, was performed for 1
diameter of 200 mm. The results of the calculation were as minute at central magnetic-field intensity of 120 gausses,
shown in FIG. 19. The orbits calculated are obviously pressure of 40 mTorr and radio-frequency power of 2 kW.
different from those shown in FG. 9. 20 while supplying CF/COfAr process gas at flow rate of
In the second embodiment, a mechanism may be used to 10/50/200 SCCM. Then, the MOS capacitors were exam
move the annular magnet assembly 30M up and down, ined as to breakdown voltage.
thereby to minutely adjust the distribution of the magnetic In FIG. 21, each circle (O) indicates the conditions under
field in accordance with the process which is to be per 25
which no electrostatic damage occurred and uniformity of
formed on the wafer. Alternatively, a mechanism may be etching rate was excellent, and each cross (X) indicates the
provided for each magnet element 31, to move the magnet conditions under which an electrostatic damage took place
element 31 vertically, thereby to minutely adjust the distri or uniformity of etching rate was bad. As shown in FIG. 21,
bution of the magnetic field. Further, to incline the lines of the wafer can be etched without suffering from electrostatic
magnetic force at the circumferential part of the wafer, the 30
damage if the central plane of the magnetic field is posi
magnet elements 31 may be tilted inwards or may have tioned in relation to the target surface of the wafer so as to
magnetization axes tilted inwards. meet the following requirements:
FIG. 20 is a diagram representing the etching-rate distri 1.1sRoo. o S1.3, and
bution on the surface of a wafer, observed when the Wafer 3'-6zoo.o.<8'
was etched by the magnetron RTE apparatus shown in FIG. 35 Further, the inventors conducted an experiment on the
17 in the same way as in the cases shown in FIGS. 6 and 7. insulation breakdown of a gate oxide film formed on a wafer
In this experimental etching, the annular magnet assembly for a mirror ratio Roo, Bloo, /Bo, in a range of
30M was driven to generate a magnetic field whose intensity -100sys 100, in addition to the mirror ratio Roo.o. at the
was 120 gausses at its center. The central plane of the coordinates (E100, 0). As a result, it has been found that the
magnetic field was located 20 mm above the target surface following condition is always preferable:
of the wafer and not rotated. In these conditions, a polysili 1.0 SR, too, S1.5
confilm on the wafer was for 3 minutes in the same manner In order to confirm an effect of the combination of an
as has been explained with reference to FIGS. 2A and 2B. As intensity gradient used in the first embodiment and an
the guard ring 25, dust-free carbon ring having the top upward sift of the central plane of a magnetic filed used in
surface aligned with the target surface of the wafer was used. 45 the second embodiment, the inventors conducted an experi
As is evident from FIG. 20, the uniformity of etching rate ment in which a silicon oxide film was etched. FIGS. 24, 25
over the target surface increased to +8%. and 26 show the intensity distribution of a magnetic field
Under the conditions of this experimental etching, the used in this experiment. FIG.22 and 23 show the distribu
lines of magnetic force inclined 6 upward and downward at tions of etching rates obtained in this experiment.
the distance of 100 mm from the center of the wafer. 50 FIG.24 is a view showing the intensity lines in the central
However, the intensity of the magnetic field and the mag plane of the magnetic field formed by a used magnet. FIG.
nitude of the vector component extending along the E-W 25 is a graph showing the intensity gradient of the magnetic
axis scarcely changed. This is perhaps because the magnetic field along E-W axis, which satisfies the conditions
field had a small intensity gradient at the edges of the wafer, described with reference to FIG. 8. FIG. 26 is a graph
mitigating the influence of the wafer edges. 55 showing the distribution of the mirror ratio Rio. of the
The second embodiment of the invention will be further magnetic field in a range of -100 Sy s100, which always
described, with regard to the measures taken to prevent satisfies the condition of 1.0 sRoos 1.5. The magnetic
electrostatic damage to a device formed in the wafer, par filed was formed by using magnet elements shown in FIG.
ticularly electrostatic damage to the gate insulting film of a 13D in which each elements was divided into two portions.
MOS device. The height and the gap length of each magnet element were
If the central plane of the magnetic field is shifted upward adjusted to form the distribution of the mirror ratio shown in
with respect to the target surface of the wafer, the angle at FIG. 26.
which the magnetic force lines intersect with the wafer will In the experimental etching the results of which are shown
change. The density of the plasma are greatly influenced by in FIG. 22, the central plane of the magnetic field was
this intersection angle and the ratio between the intensities 65 aligned with the target surface of the wafer and also with top
of the center and periphery of the magnetic field (i.e., the surface of the carbon ring 25. In the experimental etching the
mirror ratio). FIG. 21 shows the results of the experiment results of which are shown in FIG. 23, the central plane of
 5,717,294
17 18
the magnetic field was shifted 20 mm upwards from the two electromagnetic coils 64 and 66 which are arranged one
target surface of the wafer aligned with top surface of the above the other and which perform virtually the same
carbon ring 25. In either experimental etching, the annular function. A controller 68 applies AC voltages having pre
magnet assembly of FIG. 25 was used, generating a mag determined phases to the magnetic coils of the magnet
netic field having an intensity gradient, and the magnetic elements 62a to 62d. The magnet assembly 60 generates a
field was not rotated. magnetic field of uniform intensity distribution, or a mag
In the experiment which yielded the results shown in netic field having no intensity gradient. The central plane of
FIGS. 22 and 23, used were a wafer consisting of a silicon the magnetic field is shifted 10 mm upwards from the target
substrate on which an oxide film of 1 m thickness was surface of a wafer 13.
formed entirely, and a wafer which was prepared such that 10 AC voltages which are phase-shifted by 90° from each
a number of MOS capacitors, each having a gate oxide film other are applied to the magnet elements 62a and 62b. An
of 8 nm thickness and an electrode having an antenna ratio AC voltage of the same phase as the AC voltage applied to
of 300,000, were formed in a thickfield oxide film provided the magnet element 62a is applied to the magnet element
on an 8-inch wafer. The wafer, i.e., the target substrate, was 62c. An AC voltage of the same phase as the AC voltage
located in a vacuum chamber, and the silicon oxide film was 15 applied to the magnet element 62b is applied to the magnet
etched for 1 minute at central magnetic-field intensity of 120 element 62d. Hence, the magnet assembly 60 generates a
gausses, pressure of 40 mTorr and radio-frequency power of rotating magnetic field. The magnetron RIE apparatus
2 kW, while supplying CFCO/Ar process gas at flow rate shown in FIG. 27 need not have a component equivalent to
of 10/50/200 SCCM. the electric motor 27 shown in FIGS. 1 and 17.
The uniformity of etching rate over the surface of the FIGS. 29A to 29D illustrate the results of experimental
wafer increased to 8% in the case of the wafer shown in etching performed to demonstrate the advantages of the
FIG. 22, and to +5% in the case of the wafer shown in FIG. magnetron RIE apparatus shown in FIGS. 27 and 28.
23. The magnetic field was rotated at the speed of 20 rpm In this experimental etching, 8-inch wafers, each having
under the same conditions as in the etching of the wafer a silicon oxide film formed on it, were used as a target
shown in FIG. 23, the uniformity of etching rate over the 25 substrate. The silicon oxide film on each wafer was sub
surface of the wafer further increased to 3%. The wafers jected to sputter-etching for 3 minutes at pressure of 100
processed in these experimental etching were put to break mTorr and radio-frequency power of 700W, while supplying
down test. No electrostatic damages had not occurred. process gas, Ar, at flow rate of 100SCCM. For experimental
When the target surface of the wafer is aligned with the purpose, DC voltages were applied to the electromagnetic
top of the guard ring 25 and a magnetic field having an 30 coils 64 and 66 of the magnet elements 62a and 62c, and no
intensity gradient was applied, the uniformity of etching rate voltages were applied to the electromagnetic coils 64 and 66
over the target surface in the E-W axis of the wafer is of the magnet elements 62b and 62d, in order not to rotate
improved as can be understood from FIG. 22. Even in this the magnetic field generated by the magnet assembly 60.
case, where the magnet assembly is made compact, as this Nor guard rings 25 were utilized at all. Therefore, the
example in which the magnet assembly has an inner diam 35 circumferential part of the wafer was located below the
eter of 460 mm, and a height of 120 mm in relation to a target surface of the wafer.
wafer of 200 mm, the mirror ratio of the peripheral part of FIG. 29A illustrates how the etching-rate distribution
the wafer to the center becomes more than 1. Since this observed when the magnet assembly 60 generated no mag
example shows Roo. =1.25, it is not possible to prevent netic field. FIG. 29B represents the etching-rate distribution
the etching rate from being excessively high at the N and S detected when the assembly 60 generated a 30G magnetic
sides. To reduce the etching rate at the N-pole and S-pole field which had its central plane aligned with the target
sides, the central plane of the magnetic field may be shifted surface of the wafer. FIG. 29C shows the etching-rate
upwards. Then, the uniformity of etching rate over the target distribution recorded when the assembly 60 generated a 60G
surface can be more improved, as can be seen from FIG. 23. magnetic field which had its central plane aligned with the
Although the apparatus needs to be complex instructure, the 45 target surface of the wafer. FIG. 29D represents the etching
rotation of the magnetic field effectively serves to enhance rate distribution observed when the assembly 60 generated
the uniformity of etching rate over the target surface. a 60G magnetic field which had its central plane located 10
As has been described, it is possible to provide an mm above the target surface of the wafer. The average
excellent uniform characteristic over the entire target etching rate was 15 mm/min for the case shown in FIG.29A,
surface, while using a compact magnet suitable for a real 50 14 nm/min for the case shown in FIG. 29B, 17 mm/min for
apparatus, by preferably setting the intensity gradient of a the case illustrated in FIG. 29C, and 16.5 mm/min for the
magnetic field, the curved degree of magnetic force lines, case depicted in FIG. 29D. From FIGS. 29B and 29C it is
and the distribution of mirror ratios. clear that the etching rate is much higher at the N-pole and
FIG. 27 is a plan view of the magnet assembly incorpo S-pole sides than at the center of the wafer when a magnetic
rated in a magnetron RTE apparatus according to the third 55 field is applied to the wafer. As can be seen from FIG. 29D,
embodiment of the invention, more precisely illustrating the the etching rate at the N-pole and S-pole sides is moderated
positional relation between the magnet assembly and the to be similar to that at the center of the wafer-that is, the
vacuum chamber. FIG. 28 is a side view of the magnet uniformity of etching rate over the surface of the wafer is
assembly incorporated in this magnetron RTE apparatus. improved. The non-uniformity of etching rate along the E-W
The magnetron RTE apparatus according to the third axis is prominent even for the case shown in FIG. 29D.
embodiment differs from the apparatus according to the Nonetheless, this problem can be solved by rotating the
second embodiment (FIG. 17), in that a magnetic assembly magnetic field.
60 having electromagnets is used in place of the annular In the second and third embodiment of the present
magnetic assembly 30M. The magnet assembly 60 com invention, there is generated in the vacuum chamber a
prises four magnet elements 62a to 62d which surround a 65 magnetic field whose central plane is shifted from the target
vacuum chamber 10 and which perform substantially the surface of the substrate toward the second electrode and
same function. Each of the magnet elements 62a to 62d has whose lines of magnetic force intersect with the target
 5,717,294
19 20
surface of the wafer. This magnetic field mitigates the nate systems (x, y) being defined with distances
non-uniform distribution of plasma density observed at the (mm) measured from the center of the target surface
N-pole and S-pole sides. The plasma process apparatuses of the substrate in directions parallel to the N-S and
according to the second and third embodiment can, E-W axes, respectively, of the magnetic field.
therefore, maintain a uniform, high-density plasma all over 5 2. The apparatus according to claim 1, wherein a relation
the target surface of the substrate. of 1.0s Boo, /B.o. )s 1.5 holds, where Bo, and
The present invention is not limited to the embodiments Boo. are intensities which the magnetic field has at
described above which are etching apparatuses. It can be coordinates (0, y) and (t100,y), respectively, in the coordi
applied to various types of plasma process apparatus which nate systems (x, y) on the target surface of the substrate.
utilize magnetron discharge. For example, the invention may 10 3. The apparatus according to claim 1, further comprising
be applied to a CVD apparatus or a sputtering apparatus a conductive or semiconductive guard ring for Surrounding
which can form thin films. Moreover, the power supplied the substrate in a fitting fashion, said guard ring having a
between the electrodes is not limited to radio-frequency surface exposed to the process space and aligned with said
power. Rather, it may be low-frequency power or DC power. target surface of the substrate.
Various changes and modifications can be made, without 15 4. The apparatus according to claim 1, further comprising
departing the scope of the present invention. means for rotating the magnetic field in a plane parallel to
What is claimed is: the target surface of the substrate.
1. An apparatus for processing a target surface of a 5. The apparatus according to claim 1, wherein said
substrate, while using plasma, comprising: magnet elements are permanent magnets.
a vacuum chamber for defining a process space in which 20 6. The apparatus according to claim 1, wherein said
said substrate is contained and processed; magnet elements are electromagnets.
a supply for introducing into said vacuum chamber a gas 7. The apparatus according to claim 1, wherein magneti
to be made into plasma; zation axes of the magnetic elements rotate twice in a circle
around said vacuum chamber.
an exhaustion system for exhausting said vacuum cham 25 8. The apparatus according to claim 1, wherein the
ber; magnetic field has such an intensity distribution that the
a first electrode located within said vacuum chamber and intensity decreases in a direction in which electrons drift due
having a support surface for supporting said substrate to the outer product ExB.
such that said target surface is exposed to said process 9. The apparatus according to claim 8, wherein a relation
space; 30 of -0.6C(Bro-Bo)/(Boxy)-0.4 holds when -100<y<0,
a second electrode having an opposing surface that and a relation of -0.4<(Bro-Bo) (Boxy) <-0.3 holds
opposes the support surface of said first electrode; when 0sys100, where y is a coordinate (mm) on the target
a power supply for applying a voltage between said first surface of the substrate, measured from the center thereof
and second electrodes, thereby to make said gas into along the direction of drift, and Bo and Bro. are intensities
plasma and to form an electric field E which extends 35 that the magnetic field has at positions in said reference
substantially at right angles to the target surface of said plane, which correspond to the center of the target surface,
substrate supported on said support surface between and the coordinate y, respectively.
said substrate and said plasma; 10. An apparatus for processing a target surface of a
a magnet assembly for generating a magnetic field B Substrate, while using plasma, comprising:
having a reference plane that intersects with the electric a vacuum chamber for defining a process space in which
field substantially at a right angle between said first and said substrate is contained and processed;
second electrode, a supply system for introducing into said vacuum cham
wherein said magnet assembly has a plurality of mag ber a gas to be made into plasma;
net elements which have different magnetization an exhaustion system for exhausting said vacuum cham
axes and are arranged along an outer side surfaces of 45
ber;
said vacuum chamber, electrons drift due to a force a first electrode located within said vacuum chamber and
resulting from an outer product (EXB) of the electric having a support surface for supporting said substrate
field E and the magnetic field B, said magnetic field such that said target surface is exposed to said process
has a direction in said reference plane parallel to the space;
target surface of said substrate supported on said 50
support surface, and the reference plane of the mag a second electrode having an opposing surface that
netic field is deviated toward said opposing surface opposes the support surface of said first electrode;
of the second electrode, from the target surface of a power supply for applying a voltage between said first
said substrate Supported on said support surface, and second electrodes, thereby to make said gas into
such that the magnetic force lines of the magnetic 55 plasma and to form an electric field E which extends
field intersect with the target surface of said sub substantially at right angles to the target surface of said
strate; and further substrate supported on said support surface between
wherein a relation of 3°<0 (+100,0)-8° holds, where said substrate and said plasma;
6 (+100.0) is an angle at which the magnetic force a magnet assembly for generating a magnetic field B
lines of the magnetic field intersect with the target having a reference plane that intersects with the electric
surface of the substrate at a distance of 100mm from field substantially at a right angle between said first and
a center of the substrate, measured along an N-S axis second electrode,
of the magnetic field, and a relation of 1.1<Bloo, wherein said magnet assembly has a plurality of mag
o/Bc31.3 holds, where Bc and Boo, o are inten net elements which have different magnetization
sities that the magnetic field has at coordinates (0,0) 65 axes and are arranged along an outer side surfaces of
and (+100, 0), respectively, in coordinate systems (x, said vacuum chamber, electrons drift due to a force
y) on the target surface of the substrate, the coordi resulting from an outer product (EXB) of the electric
 5,717,294
21 22
field E and the magnetic field B, said magnetic field a center of the substrate, measured along an N-S axis
has a direction in said reference plane parallel to the of the magnetic field, and a relation of 1.0sBoo
target surface of said substrate supported on said yyBo, S1.5 holds, where Bo, and Boo, are
support surface, and the reference plane of the mag intensities which the magnetic field has at coordi
netic field is deviated toward said opposing surface nates (0,y) and (t100,y), respectively, in coordinate
of the second electrode, from the target surface of systems (x, y) on the target surface of the substrate,
said substrate supported on said support surface, the coordinate systems (x, y) being defined with
such that the magnetic force lines of the magnetic
field intersect with the target surface of said sub distances (mm) measured from the center of the
strate; and further 10 target surface of the substrate in directions parallel to
wherein a relation of 39<e (+100,0)-8 holds, where the N-S and E-W axes, respectively, of the magnetic
0 (+100,0) is an angle at which the magnetic force field.
lines of the magnetic field intersect with the target
surface of the substrate at a distance of 100 mm from
 UNITED STATES PATENT AND TRADEMARK OFFICE
CERTIFICATE OF CORRECTION
PATENT NO. : 5,717,294
DATED February 10, 1998
NVENTOR(S) : Itsuko SAKAI et al.

it is certified that error appears in the above-indentified patent and that said Letters Patent is hereby
corrected as shown below:

Claim 1, Col. 19, line 64, "Bc41.3" should read --Bc51.3-.

Claim 10, Col. 22, line 2, "1.03Boo" should read -1.0-Boo--.

Signed and Sealed this

Thirty-first Day of August, 1999

Q, TODD DICKINSON
Attesting Officer Acting Commissioner of Patents and Trademarks