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Lec 8

This document discusses photolithography, a crucial technique for fabricating MEMs-based sensors, focusing on its application in creating small structures on silicon wafers using photoresist. The lecture outlines the steps involved in photolithography, including wafer cleaning, primer coating, photoresist spin coating, and exposure to UV light, along with the differences between positive and negative photoresists. Additionally, it explains the importance of masks in the process and the parameters affecting photoresist quality.

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0% found this document useful (0 votes)
10 views35 pages

Lec 8

This document discusses photolithography, a crucial technique for fabricating MEMs-based sensors, focusing on its application in creating small structures on silicon wafers using photoresist. The lecture outlines the steps involved in photolithography, including wafer cleaning, primer coating, photoresist spin coating, and exposure to UV light, along with the differences between positive and negative photoresists. Additionally, it explains the importance of masks in the process and the parameters affecting photoresist quality.

Uploaded by

0801ei221019
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
You are on page 1/ 35

Fabrication Techniques for MEMs-based Sensors: Clinical Perspective

Prof. Hardik J Pandya


Department of Electronic Systems Engineering
Indian Institute of Science, Bangalore

Lecture – 08
Photolithography

Welcome. This is a very important module for this particular session of lectures. Today
we will be understanding a very important aspect and that is photolithography. So, what
is the purpose of photolithography and why we want to perform photolithography or why
we want to understand photolithography?

So, let us take a few examples so that you understand how we can use photolithography
for fabricating different devices or different structures on the devices.

(Refer to Slide Time: 00:59)

Now, I am holding one wafer in my hand; and it has few patterns. There is another wafer
in my hand; again it has few patterns. There are two wafers in my hand with few patterns
as you can see. Now, how can you design these patterns? The answer is
photolithography. So, we are learning how to perform photolithography. I will show you
a few more devices just to make sure that we clearly understand what we are learning
today.
You see there is a heater on this. If you can zoom in a little bit, yeah. So, you can clearly
see or hopefully, you can clearly see there is a heater which is over here in this area. And
these are two contact pads of the heater; heater is here. How can you fabricate this heater
that is the question? How can you fabricate this heater? And we will learn this thing
today. And then you will see them in subsequent classes when we talk about micro
engineering devices for the clinical perspective, how you can fabricate those devices
using photolithography.

(Refer to Slide Time: 02:44)

So, let us see on the screen photolithography. Photolithography comes from word photo
and then lithos. So, ‘lithos’ and ‘graphy’ is a Greek word used which means carving
from a single stone. The purpose of photolithography is to create and of course photo
means nothing but photons light to carve a single stone; here in our case is a single
crystal which is silicon.

So, anyway, the purpose of photolithography is to create small structures or features on a


silicon wafer using photoresist. We will see what is a photoresist and features made out
of photoresist by etching with UV light. So, what we understand, we can create small
features, we can use silicon wafer, but it is not just limited to silicon wafer; we can also
use glass as we have just seen; we can also use an insulator like alumina. There is a
polymer involved and that polymer is called photoresist; this polymer is photosensitive
polymer. And we will be using this polymer to create several features by etching the
polymer with the help of UV light.

(Refer to Slide Time: 04:48)

So, now, when you talk about photolithography, there are several steps involved. And the
first among the several steps is wafer cleaning. You cannot or you should not start any
process in microengineering without cleaning the wafer. Now, cleaning the wafer with
the deionized water or to drive it with nitrogen or to just pre-bake it.

Cleaning of wafer means as we have discussed in earlier classes, we have a wafer, we


have a thin layer of oxide. Even when do not do anything at room temperature because of
the surrounding air, there will be a thin layer of oxide a few nanometers of oxide grown
on silicon wafer. So, the first thing that you have to do is dip this wafer in HF, H F dip.
This is very important. When you perform HF dip what you will see is the silicon
dioxide can be etched from silicon wafer.
(Refer to Slide Time: 06:24)

After silicon dioxide is etched, then you have to perform the rest of the steps which is
cleaning with deionized water followed by drying with N 2 hydrogen-air; followed by
pre-baking all to remove any moisture on this surface.

So, what are the process first you have to perform HF dip, then you have to clean the
wafer or rinse the wafer with the help of DI. After rinsing the wafer with DI, you have to
dry the wafer with the help of nitrogen. After drying the wafer with nitrogen, you have to
pre-bake the wafer to remove any moisture. After this your wafer is ready for
photolithography. So, to perform photolithography, the first step would be, if you see the
screen first step would be pre-bake; we perform pre-baking already and primer coating.
(Refer to Slide Time: 07:43)

HMDS is one of the primers that we can coat and this will improve the adhesion of
photoresist on to a surface of the substrate. After coating HMDS or primer, the next step
is photoresist spin coating, we have to spin coat photoresist.

(Refer Slide Time: 08:21)

And the thickness of the photoresist depends on the rpm and depends on time. How
many rotations per minute we have programmed; for how much time we are spin coating
the photoresist based on or depending on rpm and time, we can know or we can
determine the thickness of the photoresist. So, once we perform spin coating with
photoresist, we go for soft bake.

(Refer to Slide Time: 09:05)

Now, in a conventional situation, the soft bake is done at 90-degree centigrade for 1
minute on the hot plate. This time would vary if I use the oven. After soft baking, I had
to perform alignment and exposure. So, I have a wafer; I clean the wafer and then on this
wafer I coat a primer on the primer. I, of course, pre-bake it and then coat the primer on
that I will spin coat my photoresist. This is my silicon. This is my primer.

After photoresist, I have to get a mask to let us say this is a mask. We will talk about the
mask and photoresist how it will work depending on its type. Masks are also classified
depending on their pattern which we will discuss later. So, this is your mask. You have
to align the mask and then perform UV exposure.

After UV exposure, you have to unload the mask and dip the wafer in a beaker in a
beaker which contains photoresist developer. After developing photoresist, you have to
take out the wafer and perform hard baking; in a conventional way.
(Refer to Slide Time: 12:05)

Conventional photoresist that is positive negative photoresist is performed at 120-degree


centigrade 1 minute on the hot plate. Let us write it down on a hot plate. After
performing hard bake, you can inspect the pattern. After performing hard bake next step
is inspecting the pattern.

So, we will take an example to see what we have discussed now so that we understand
clearly how photoresist or how photolithography can be used.

(Refer to Slide Time: 12:55)


So, like I said wafer cleaning and pre-bake can be done by bubble jet, high-pressure rinse
by sonication. Dehydration or pre-baking can be done at high-temperature baking to
remove moisture. After wafer cleaning, the next process is priming. A primer is used to
improve photoresist adhesion, HMDS is used. HMDS is your hexamethyl disilazane and
that is used to improve the adhesion of a photoresist onto the substrate.

(Refer to Slide Time: 13:40)

So, what is photoresist? A photoresist is a solid organic material, it is used for


transferring the design pattern to this wafer surface changes photo solubility due to
photochemical reaction exposed to UV light. So, let us first understand the role of
photoresist. So, if I say I have photoresist; photoresist is of two types, one is positive
photoresist, second is negative photoresist.

Now, let us take an example of this particular pattern; this pattern. Now, there are two
wafers or let us draw the top view of the wafer rather than a cross-sectional view. There
are two wafers one wafer is coated with positive photoresist, the second wafer is coated
with negative photoresist. This is your mask.

So, if I use this mask on the photoresist, so I will I have to, so what does that mean if I
keep this mask on this wafer like this and the wafer is coated with positive photoresist.
What will happen? when I expose this to UV light and I develop the wafer in which I use
this kind of mask, then I will have my photoresist protected in this area.
So, what do you understand here, what we understand is that the area which is exposed
becomes weaker. And the area which is not exposed becomes stronger. Why, because
our mask was this and we had positive photoresist coated on the wafer. And this wafer if
I place under this mask and if I expose it and I develop it, then I obtain this pattern for
positive photoresist.

In the case of negative photoresist, in the case of that sensor of positive photoresist, we
have used wafer which was coated with negative photoresist. Then when I expose to UV
light, what do I obtain, I obtain a pattern which I am drawing now. I will obtain a pattern
that looks like this.

So, if I use negative photo photoresist and I used this mask, then I obtain this kind of
pattern. And this pattern means that the area which was exposed gets stronger and the
area which was not exposed gets weaker. So, in the case of positive photoresist and
negative photoresist, we have to remember in the positive photoresist, they are exposed.

Let us see here let us write down, exposed. Can you see? No exposed, let us say the area
exposed becomes weaker. In case of negative photoresist, it becomes stronger. In case of
positive photoresist, it becomes weaker. I just remove the mask, remove the wafer then
you can see this is, the area which is not exposed, the remaining area is exposed.

So, in case of positive photoresist, what I obtained is the area that was not exposed gets
stronger, the area which was exposed gets weaker here. In the case of negative
photoresist, the area which was exposed which is transparent is exposed. Exposed under
what, UV light; an area which was exposed became stronger and vice versa

And the area which was not exposed, this is the area, which becomes weaker, in case of
negative photoresist, you can see here, it becomes weaker. So, the photoresist is
developed in this area. So, it is very important to understand photoresist, because we will
be using positive and negative photoresist; extensively when we understand
photolithography.
(Refer Slide Time: 23:27)

So, let me show you a few more points. Now, what should the photoresist consist of what
should the polymer have? the polymer should have high etched resistance and good
adhesion that is a requirement.

And how is this performed, how the polymer is coated onto the wafer, these are the
steps; first dispense 3 to 5 ml of photoresist, second slow spin at 500 rpm, followed by
high, a ramp up, to 1100 to 5000 rpm, depending on the thickness that you want,
photoresists spread through centrifugal force. And the quality measures for this
photoresist can be time, thickness, speed, uniformity, also we can see particles and
defects if any on the photoresist. When we coat the photoresist, we have to take care of
these many parameters

Now, if you see here, there is a requirement of slow spin. This low spin is to uniformly
distribute photoresist onto the wafer, and then we ramp it up to 1100 to 5000 degrees
5000 rpm, so that we can obtain the thickness of our desire. Now, there are two types of
photoresist like we have discussed here, positive and negative type. The negative
photoresist can be SU-8, it can be N 4200, 4300, 4400. The positive photoresist can be
AZ-3312, it can be from Shipley 1.2 litres or Shipley 1.2.
(Refer Slide Time: 25:32)

So, as I said, when you talk about photoresist there are two types. One is a positive
photoresist that is exposed to UV light removes this resist, exposure to UV light removes
the resist or exposed region becomes weaker correct. Negative photoresist exposure to
UV light maintains resist or the exposed region becomes stronger. So, this is the case if
you have a mask, then if I use positive photoresist, I will obtain this pattern. If I use
negative photoresist, I will obtain this particular fashion; if I use the mask which is
shown in schematic here.

So, since we were talking about the mask. Let us see how the mask looks like, how the
mask, in reality, looks like. So, when we talk about masks, mask can be bright field
mask, it can be dark field mask; b field, dark field, two types of mask b field and dark
field mask. So, let us see how b field mask looks like, let us see how dark field mask
looks like.
(Refer Slide Time: 27:24)

(Refer Slide Time: 27:31)

So, I will show it to you, the mask holder is in my hand. So, you do not have to worry
about zooming in this time, you just see that I am holding a glass plate, this is a 5-inch
mask.
(Refer Slide Time: 27:52)

Why are we using a 5-inch mask, because we are interested in using a 4-inch wafer like
this, correct? We are interested in using a 4-inch wafer, 5-inch mask. So, whenever you
are using wafer depending on the diameter of the wafer, you have to change the size of
the mask.

Now, what can you see in this mask, can you see my finger, can you see my face, you
can, but there is some pattern through which you cannot see. So, most of the area in this
mask is empty is transparent. So, this mask is nothing but b field mask. And there is
some pattern on the mask with some alignment mark over here which you cannot see
from there, it is impossible. But, the point is, there is glass, it can be a chrome mask.
(Refer Slide Time: 29:16)

Now, let us see one more mask. So, we can clearly distinguish what I mean by the b field
and darkfield masks. This is another mask here, what you can see? You can see there are
two patterns on the bottom, which are transparent; remaining field is dark, but here on
the bottom you can see that some patterns are there. So, this is your dark field mask, it
can be used as a mirror.

So, we have b field mask, and we have a dark field mask. So, this is your b field mask,
this is your dark field mask very easy to identify you know it is very easy. So, are a 5-
inch mask.
(Refer Slide Time: 30:51)

So, coming back to the screen of photoresist positive, negative; mask, b field, dark field.
So, how can we spin coat photoresist onto a silicon wafer? So, we need a vacuum chuck,
which you can see here there is a vacuum chuck. There is a vacuum pump; this goes to
the vacuum pump. There is a spindle that spins.

And we said in the starting, there is a vacuum chuck here. Now, here the vacuum would
be created here, in this area center. This is the wafer, wafer you can also call as substrate.
And substrate is held onto this vacuum chuck with the help of a vacuum. And once it is
attached or held through vacuum, then we start dispensing photoresist. So, there is a
photoresist dispenser.
(Refer Slide Time: 32:24)

So, once the photoresist is dispensed. Then, we have to follow slow spin; ramping up;
and once it is spin-coated. And it stops, we can see time, speed, the quality measures can
be time, speed, thickness uniformity and particle size.

(Refer Slide Time: 32:37)

So, if you remember the steps in the photoresist, after spin coating, there is soft bake.
Soft bake like I said 90 degrees 1 minute depending on type of photoresist, 1 minute on
hot plate.
(Refer Slide Time: 33:20)

So, soft baking when we perform, what is the advantage of soft baking? First is partial
evaporation of photoresist solvents; second is it improves adhesion; third is it improves
uniformity; 4th is it improves etch resistance; then optimize light absorbance; finally
characteristics of a photoresist.

So, optimize light absorbance; improves etch resistance; uniformity; improves adhesion;
and partial operation of photoresist solvents. So, characteristics of photoresist can be
defined, depending on b field photoresist or darkfield photoresist.

And also also what kind of mask, you use so now, we know what is the advantage of
performing soft baking.
(Refer Slide Time: 34:18)

After soft baking, we have to align the mask. First is load the mask, and then align it with
the spin-coated wafer. So, when you align the mask after then, what you perform? UV
exposure. So, you should have a UV light source.

The ideal intensity pattern should be like this. However, the UV intensity on the wafer is
somewhat like this. So, how it happens is that this is a mask, through the mask, when the
UV light passes through there is a straight refracted light. Of course, there is a lens here,
and through the lens the light is diffracted and collected by the lens which falls on the
UV. So, lens diffraction after focused by the lens, and falls on the photoresist coated
wafer. And it cannot pass through the dark area; it can only pass through the b area; it
cannot pass through a carrier, and cannot pass through UV light.
(Refer Slide Time: 35:48)

So, after the photoresist is exposed in UV light like I said, depending on the mask, n-type
of photoresist will obtain different patterns. So, how can we obtain this? by developing
photoresist in photoresist developer. So, the soluble areas of photoresist are dissolved by
developer chemical, visible patterns appear on the wafer, either windows or islands
whatever we have designed.

(Refer Slide Time: 36:54)

Suppose, we are designing some electrodes on the wafer, then these are some islands,
these are some valleys, or we are creating a pattern like this, which is your photoresist.
Then this area, we want to etch, this is your photoresist, this is your silicon, we want to
etch silicon . So, this is a window that you have created. We will take an example in later
class.

(Refer Slide Time: 37:28)

So, when you develop the photoresist, if it is normal development, you will get a pattern
which is shown here. However, there is a under development, then you will get this kind
of pattern. If it is incomplete development, you can see here. If it is over development
then, you will see this structure.

So, the time is very crucial. The time to develop the wafer in the photoresist or develop
the photoresist in the photoresist developer is very important. And if you exceed the
time, then there is an over development; sometimes there is a incomplete development. If
you take out the wafer before time and that can be under development.
(Refer Slide Time: 38:27)

Having, said that let us see negative and positive photoresist examples which we have
just seen, but in form of a schematic. So, if I have a substrate and if I coat the substrate
with a photoresist, I have a mask here. You can see there are two dark areas. Remaining
there are b fields or let us assume it is a b field mask.

Now, if I expose wafer number 1 with UV light, then if it is a negative photoresist; the
area which is exposed, you see the area which is this one, this one exposed will be
stronger, you can see here. The area which is exposed is stronger in case of negative
photoresist.

While in the case of positive photoresist, the area which is exposed becomes weaker.
Area which is exposed by UV light, that area photoresist will get developed if it is a
positive photoresist you got it? It is a negative photoresist and positive photoresist is very
easy to understand, and what will happen, if I use a particular photoresist?
(Refer Slide Time: 40:29)

We have just seen a few masks. And these are master patterns which are transferred to
the wafers. So, when you talk about types of mask, we have F e 2 O 3 on soda lime glass;
we have chrome mask; these are 2 different materials; while the masks can be classified
as b field mask or dark field mask. This is an example of a b field mask.

(Refer Slide Time: 41:15)

Now, when we talk about mask there can be defects in the photomask. What are those
defects? The first defect is that you will see is a chrome spot. Now, we do not care, when
we are going to make a bigger structure; when we are going to fabricate a bigger
structure, but when we talk about MOSFETs. Then within this area, there can be 1000 of
MOSFETs. So, we are losing those MOSFETs, if we have the chrome spots.

If we have a chrome extension, we will not have correct results. If we have bridging and
if I am going to make a heater, it will be shorted. If I make a heater let us say, and if
there is a bridging there is a short. So, resistance would be different or let us say, you
have a heater like this. And if I have a short here, then it is gone correct. So, chrome
bridging is not acceptable.

Next pinhole; chrome is not all allowed. Then you see the clear extension is not allowed.
Because, the value that you calculate and value when you use, this mask would be totally
different.

(Refer Slide Time: 23:20)

Next is a clear break, breakage is not at all allowed. If there is a break let us say, if I
make this pattern. And if this is a break, then it is not correct. The design itself will give
us a different value if there is a break in the mask. So, these are few defects that you need
to understand, and need to observe whenever you start working with a photomask.

So, this is a video interesting video, where you will be able to see the mask aligner and it
is an automatic mask aligner. So, I will play the video look at it. It is a front to back
alignment, and it is very interesting to see this mask aligner. Then let us talk later.
(Refer Slide Time: 44:56)

The m a 200 compact which offers an advanced technology design, unmatched precision
and a high degree of flexibility. Say for yourself, how easy it is to operate. The chuck is
stored in the bottom part of the aligner, and is quick and easy to load; equally, easy to
insert or the mask holder and the mask. Now I load the carrier; that is all there is to it.
And the m a 200 compact is ready for operation.

(Refer Slide Time: 45:47)


The processes of the m a 200 compact can be controlled via the touch screen. For some
processes, you can select between fully automatic and manual operation. A robot scans
the wafers and determines their quantity, position, and size.

And the processing begins, the m a 200 compact processes wafers and substrates up to
200 millimetres, regardless of their material size, shape, and thickness. The machine runs
and adjusts fully automatically. And is optimized for the processing of fit resists; such as
with thick resists, left chip bumping, wafer-level packaging, memes, nanotechnology or
telecommunication devices.

The big advantage over steppers is the exposure of the entire wafer in one step. Thus a
throughput of more than 100 wafers per hour can be achieved with overlay accuracy in
the sub-micron range.

Now, let us slow the process down, and take the closer look. First, the wafer is pre-
adjusted on to the pre aligner in preparation for the ensuing alignment. A linear transport
system loads the wafer onto the exposure chuck which together with the robot arm
guarantees the optimal and flexible handling of the substrate.

No other mask aligner on the market offers a higher degree of alignment accuracy than
the m a 200 compact. With the use of the recently developed and patent pending direct
align option from suss. The mask is aligned directly to the wafer guaranteeing, and
overlay accuracy of up to 0.5 microns at 3 sigmas.

The structures of the photo mask are conveyed via shadow cast. The patented wafer
levelling system from suss compensates for topographic variations and wedge errors.
Thus guaranteeing perfect alignment and exposure results and the entire process is easy
to monitor, here on the touch screen.
(Refer Slide Time: 48:08)

Because of the m a 200 compacts newly designed microscope. During exposure the
mirror housing does not move forward, the microscopes only move sideways. Thus,
reducing the vibrations of the alignment stage to a minimum resulting in far greater
accuracy.

The optics of the m a 200 compact are optimized for thick resist processing and bend
resists. It achieves a resolution of 3 microns in proximity mode and a sub-micron
resolution in contact printing.

A microscope for bottom side alignment is optionally available. It can process substrates
with thicknesses of up to 4 millimeters. The m a 200 compact is a master when it comes
to detail our idea while designing it was to create a device that is both user and
maintenance-friendly. In order to further reduce your operational costs the electronics,
and all-important components are easily accessible as well as being arranged in a clear,
and logical manner.
(Refer Slide Time: 49:34)

Because of its compact size, it also saves valuable space in the cleanroom. The m a 200
compact is the ideal exposure system for application areas with high demands, in terms
of package, densities, and micro, mechanical, structures.

I can only recommend that you take a closer look, at our new mask aligner in person and
would like to invite you to do so today, the MA200 compact from Suss Microtech.

Let us see another video and again this is on the Karl Suss MA6 Mask Aligner S O P.
How to use a mask aligner this is a video on this, so let us see this video, and then let us
discuss. This is the M A 6, it is used to expose our UV light to a substrate that has or in
the photoresist on. So, before we on the machine the first thing, we got to do is make
sure the light bulb is turned on.

So, we come out to the back. And you can see the lights turned on by the recession here
or you can see the polling. So, you know that the light bulb is on.

But in addition to that, you want to find out, how many hours are left on the light bulb.
So, you check the power supply. Hold this button, it says 3 2 2 6 (Refer time: 51:20)
hours the bulb is being used.

So, the bulb has a lifespan of 4000 hours. So, when it is over 3500, we would notify
staff, and tell them to change it. So, we are pretty close to that.
Now, that the bulb is to use, and there is nothing wrong with the bulb, and the power
supply, what login to the system. So, before we log in, we check the logbook. And the
logbook would say that the last person, who used him is Monica on 221, and then you
would check the notes and so you can see there is nothing wrong.

(Refer Slide Time: 51:49)

So, we will turn the machine on and log in. So, the computer says, you have to log in to
use the machine, otherwise you cannot turn on. And the login has several functions.

The first thing is the login, where you type in username and password. Your scheduler to
use a machine at different hours also, you should check this to make sure nobody else is
using. So, today is a 24th and its 10 a year nobody using it. So, definitely use it.
(Refer Slide Time: 52:22)

The user has a history tab, where we can see the last star user. And you can see that
Monica is the last user. And she is the last one to log. So, let us know the machine is
already in use. We just log in, so, once you have logged in the machine, you will be able
to power up, and what we do, now is we turn the on switch on here.

(Refer Slide Time: 52:54)

So, we just going to switch on. Now, you can see a machine starting up. There in the
front is a screen, it tells you a lot of information. So, it says ready for the start, last load
button. So, the load button is here, I will press that, and now it says watch out machine is
starting up.

You know, when the machine is ready for loading. And started up, when if the (Refer
Time: 53:20) says ready for load. So, before we are going to switch on the machine. The
only thing, we can do is change the parameters. So, hit this button called edit parameter.
So, now you can just adjust parameters such as time, and distance, and type of exposure.

So, how do we edit the parameters or change the difference from this? So, we made this
way, we change the gap; change the type of contact, and then change exposure type.

So, let us change the exposure time first. So, it is 5 seconds now, we can change it to 25
seconds. If you hold fast and up, you can change it faster. So, it is 25 let us make it 26.
Let us change the alignment gap, let us make that 40, and let us change to make a soft
contact, many problems have changed.

There is different type of exposure types. Some soft, vacuum, hard or if you look at a
supplemental to, get more information. Now, we will send a soft, so what is the timer is
set.

We vary the parameter, now is to load the mask. So, how do we load the mask, we press
the button for the changing of the mask on the screen. So, we have changed the mask,
ready to load the mask.

So, you get a look over here, so, you load your mask in here my lifting this up here. And
putting it in (Refer time: 55:10) you hit this button called enter. We were talking about
vacuum, so, now the vacuum is off, when you press enter. Now, the vacuum is on, when
you come back, you can see that it is (vacuum) stuck by lock.

So, now let us put this in here, so we carefully carry it. And face it all the way in and
when it is in the press, change the mask. And that is how you load your mask. We are
going to be doing a backside aliment. Now, so what this does is, it aligns features on the
back of your wafer (see your mask).

So, first thing, they do is and we have to have our mask loaded. And then we turn the
screen on. And we make sure this thing says backside, when my microscope is on. So, it
is on but also, we need to change this to backside alignments.
So, if you need your topside alignment or it can be a backside alignment. So, this is an
elimination. So, now the light is coming from the backside. So, if you look here, you can
see the light hitting the features. So, that is the microscope from here coming looking up
to lighten yet. So, you can look for those on the screen, now. And thats pretty much,
what you do.

This controls the microscopes on the back. So, you can select one at a time to move,
around you to find your features. It looks like , we found aligning marks on the mask. So,
we now adjust the focus. So, we use stop straight left and right commands to adjust
position and intensity.

If I want to hit with the left one; it is a similar thing, so did you find your mask, and you
think, you are ready to do next exposure, and align it. You will grab this image the same
press grab image button here.

And then It takes a picture of the mask, then now we are ready to load the wafer. You
press this button, versus load wafer. So, it says first I fill the substrate on to chuck.

So, now you can see, you are in contact. This is the image overlay from the mask. And
these features, here see the bottom substrate on your wafer. So, how do you move the
wafer? We know that these buttons move the microscope the wafer. It is these knobs.
Here this is Y, this is X, on this site (Refer time: 58:51)

So, I will give you an example. I can turn this, and you can see the background. This
image is moving, and you can see this moving. So, this is the position on the left side.
And the side is the X knob, we can adjust the tilt with this too, and how you can adjust
the focus. Now, you can adjust the intensity of light.
(Refer Slide Time: 59:20)

So, find the alignment mask, and then align them. So, once you have aligned them, we
are ready for exposure. Then how do you expose, we first press your alignment check,
which will bring it up to touch. You want to make sure nothing moved, and then with
some contact, you hit exposure. And when you hit exposure, it is good to turn your back
away from the light. So, does not damage your eye. So, hit exposure, and then we just
turn away.

So, after exposure, you need a unload your wafer. So, what you do is you come to the
screen. Say you(Refer time: 60:01) unload, it is no substrate. So, let us pull it out. Then
this is (Refer time: 61:07) you press the enter button. And then vacuum would be
released then you can take your wafer out. Then, when you put back in, so that is how to
unload your wafer after exposure.

What we are going to do? Now is topside alignment by using the microscope on the top
to align to the wafer that is underneath to the glass. So, to do the topside alignment, we
need to move the backside microscope. So, we press this button that turns it off.

Also, we need to put the elimination to the top side. And then we can load our wafer in.
So, again, you press load. Now, it says pull the slide, and load substrate onto chuck.
When you press enter into that, then the microscope will ultimately come down.
Because, we have the BSI microscope power button on and off.
So, now it is down. We will turn the TV screen on. And it is taking it in, in the image
from here onto the screen. So, here these buttons control the X and Y position of the
microscope. So, this thing, we found something here.

So, we can turn up the power of elimination at a pretty high intensity. So, we lower their
power then, you can see that. So, we are going to find the mask alignment, mark on this
side. So, there are different functions on this knob here.

So, if you move it, it controls the light microscope the X position of the microscope. And
the left side has the same button. So, I knew the left knob, I can turn this way; but I move
the knob, I can turn it. This way, we can adjust the tilt to make these match up by turning
this knob here.

So, it looks like it is pretty messed up. So, what you do is you do the same thing as a
quarterback side alignment, align on your wafer. So, these knobs always control the
substrate. So, I move this, you can see that, this has been moved. So, you can tell that is
the substrate moving, not the mask.

So, you try to focus the device. And you are trying to find your alignment mask and align
them to the features. And then once you are in-aligned; then you do the same thing. You
do a alignment check, and I will bring the mask up. And then you expose it. So, you
press expose, then you need to expose again. So, then you turn away.

So, after double exposure of the wafer you pull out. And then you take it out. Now, you
finish your sample you put this back in. Now, if you are done, you want to move this
back up.

And you do not want to bring it back down. This is where, you pressed A P S A button.
So, by default this will not come down. Also to bring this up, you press F 1 and enter,
and you bring the microscope up. It is always good to leave it. In the fix position for the
microscope up, and the BSA button on, because that way the microscope does not come
on and off, every time you using it.

So, after that, we reached the stage to take out our mask the way to unload the mask. Let
us press change mask. It is pretty similar to loading it. It is a reverse process, you press
change mask. It would take the substrate out. We hit the enter button to remove it back.
In a new ticket mask out, you press the change mask button again. And it will ask to
enter. Now, here the mask is there.

So, now everybody would turn the system off. So, we will make sure everything is in the
standby position. You want to make sure you write on the logbook to different
parameters. So, compressed air is about 7.9; nitrogen is about 1.65; the vacuum is about
0.86 taking 0.86. We use a 4 inch wafer with silicon though we did 25 seconds exposure.

Now, we are going to turn off the thing. We turn off the switch here, press on the TV
screen. And then, we can logout here.

So, if you now see, what have we learned? If you can see, I will show it to you on the
screen. Here, I have in something in my hand. What we have learned today is a step
called photolithography. In the last two videos, what you guys have seen one is a
automatic mask aligner. You have to load the wafer, it will perform everything a robotic
arm will take the wafer, and then it will perform the photolithography.

In the second one, you have seen how can you perform front to back alignment, how can
you align the wafer, how we have to align the mask, what is the procedure. The idea is to
fabricate simple devices like the one that I am holding in my hand or complex devices
such as MOSFET or devices that can be used for clinical application, like our drug
screening device that, we will be talking about in the lectures to follow .

(Refer Slide Time: 67:04)


A drug screening device will look similar to what I am holding now in my hand. This
device can be used for rapid drug screening that means that, if a person comes with a
cancer to a doctor, where the doctor has to decide, which drug he has to or she has to
give to the patient and which will work out.

But, unfortunately there is no patient centric platform that a doctor can try, the clinician
can try, before giving it to the patient, that means what I am saying is if you take the cells
from the patient, you load the cells on to this device. You flow the drug, you get the
results, and tell which drug would be effective for this particular patient.

Can you fabricate this kind of device? The answer is yes. How? By understanding
photolithography . So, we will be looking at such kind of device such kind of interesting
platforms that can be used for rapid drug screening. Why I said rapid drug scanning?
Because there are multiple channels here and in a single shot, we can test 8 different
drugs, we can screen using this platform or we can check 8 different patient samples with
single drug. So, such kind of applications, we can use it using the micro engineering
platform, and understanding photolithography.

So, just go through this particular module and try to understand, try to focus and see
what things we have been discussing in this module. And if you have any questions, feel
free to ask me in the forum, and either me or my TA would reply to your queries. Let us
see very interesting applications of this microengineering devices in the classes to
follow.

Till then you take care, have a nice day, bye.

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