MMFT107T1 Power MOSFET 250 Ma, 200 Volts: N-Channel SOT-223
MMFT107T1 Power MOSFET 250 Ma, 200 Volts: N-Channel SOT-223
Preferred Device
Power MOSFET
250 mA, 200 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc–dc converters,
solenoid and relay drivers. The device is housed in the SOT–223 http://onsemi.com
package which is designed for medium power surface mount
applications.
250 mA
• Silicon Gate for Fast Switching Speeds 200 VOLTS
• Low Drive Requirement RDS(on) = 14
• The SOT–223 Package can be soldered using wave or reflow.
N–Channel
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die. D
1 2 3
Gate Drain Source
ORDERING INFORMATION
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage V(BR)DSS 200 – – Vdc
(VGS = 0, ID = 10 µA)
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss – 60 – pF
(VDS = 25 VV, VGS = 0,
0
Output Capacitance Coss – 30 –
f = 1.0 MHz)
Transfer Capacitance Crss – 6.0 –
2.5 500
TJ = 25°C VDS = 10 V
VGS = 10 V
2 400
I D, DRAIN CURRENT (AMPS)
1.5 6V 5V 300
4V
1 200
3V
0.5 100 TJ = 125°C
25°C
-55°C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
http://onsemi.com
2
MMFT107T1
10 10
VGS = 10 V ID = 1 A
VGS = 10 V
8
6 TJ = 125°C
1
4
25°C
2
-55°C
0 0.1
0 100 200 300 400 500 -75 -50 -25 0 25 50 75 100 125 150
ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance Variation with Temperature
1 250
VGS = 0 V
f = 1 MHz
200
I D, DRAIN CURRENT (AMPS)
TJ = 25°C
C, CAPACITANCE (pF)
150
0.1
100 Ciss
50 Coss
TJ = 125°C 25°C
Crss
0.01 0
0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30
VSD, SOURCE-DRAIN DIODE FORWARD VOLTAGE (VOLTS) VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
10 2
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
9 ID = 200 mA
VDS = 10 V
gFS, TRANSCONDUCTANCE (mhos)
8
1.5
7
6 VDS = 100 V
5 1
TJ = -55°C
4 160 V
3
0.5 25°C
2
125°C
1
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 100 200 300 400 500
Qg, TOTAL GATE CHARGE (nC) ID, DRAIN CURRENT (AMPS)
http://onsemi.com
3
MMFT107T1
0.15
3.8
0.079
2.0
0.248
6.3
0.091 0.091
2.3 2.3
0.079
2.0
http://onsemi.com
4
MMFT107T1
160
to Ambient (C/W)
0.8 Watts
°
120
1.25 Watts* 1.5 Watts
100
R θ
*Mounted on the DPAK footprint
80
0.0 0.2 0.4 0.6 0.8 1.0
A, Area (square inches)
Another alternative would be to use a ceramic substrate board, the power dissipation can be doubled using the same
or an aluminum core board such as Thermal Clad. Using footprint.
a board material such as Thermal Clad, an aluminum core
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated • The soldering temperature and time should not exceed
temperature of the device. When the entire device is heated 260°C for more than 10 seconds.
to a high temperature, failure to complete soldering within • When shifting from preheating to soldering, the
a short time could result in device failure. Therefore, the maximum temperature gradient should be 5°C or less.
following items should always be observed in order to • After soldering has been completed, the device should
minimize the thermal stress to which the devices are be allowed to cool naturally for at least three minutes.
subjected. Gradual cooling should be used as the use of forced
• Always preheat the device. cooling will increase the temperature gradient and
• The delta temperature between the preheat and result in latent failure due to mechanical stress.
soldering should be 100°C or less.* • Mechanical stress or shock should not be applied
• When preheating and soldering, the temperature of the during cooling
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When * Soldering a device without preheating can cause
using infrared heating with the reflow soldering excessive thermal shock and stress which can result in
method, the difference should be a maximum of 10°C. damage to the device.
http://onsemi.com
5
MMFT107T1
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
100°C 140°C (DEPENDING ON
MASS OF ASSEMBLY)
100°C
http://onsemi.com
6
MMFT107T1
PACKAGE DIMENSIONS
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
INCHES MILLIMETERS
S B DIM MIN MAX MIN MAX
1 2 3
A 0.249 0.263 6.30 6.70
B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89
D F 0.115 0.126 2.90 3.20
G 0.087 0.094 2.20 2.40
L
G H 0.0008 0.0040 0.020 0.100
J 0.009 0.014 0.24 0.35
J K 0.060 0.078 1.50 2.00
C L 0.033 0.041 0.85 1.05
M 0 10 0 10
0.08 (0003) M S 0.264 0.287 6.70 7.30
H
K STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
http://onsemi.com
7
MMFT107T1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
http://onsemi.com MMFT107T1/D
8