NPN Transistor Bare Die - BC107B
Rev 1.0
General purpose medium power amplifier or switch in bare die form 08/01/19
Complement to PNP BC307B
Features: Die Dimensions in µm (mils)
Low saturation voltage 350 (13.78)
Well suited for amplifier applications 102.5
(4.02)
High reliability gold back metal
High reliability tested grades for Military + Space
(4.02)
102.5
BB
350 (13.78)
Ordering Information:
(5.51)
140
E
The following part suffixes apply:
No suffix - MIL-STD-750 /2072 Visual Inspection
“H” - MIL-STD-750 /2072 Visual Inspection
+ MIL-STD-38534 Class H LAT
140
“K” - MIL-STD-750 /2072 Visual Inspection (5.51)
+ MIL-STD-38534 Class K LAT
LAT = Lot Acceptance Test.
For further information on LAT process flows see below. E = EMITTER B = BASE
www.siliconsupplies.com\quality\bare-die-lot-qualification DIE BACK = COLLECTOR
Supply Formats: Mechanical Specification
Default – Die in Waffle Pack (400 per tray capacity) Die Size 350 x 350 µm
(Excluding Saw Street) 13.78 x 13.78 mils
Sawn Wafer on Tape – Specific request
102.5 x 102.5
Base Pad Size
Unsawn Wafer – Specific request 4.02 x 4.02 µm
96 x 96 mils
Emitter Pad Size
With additional electrical selection – Specific request 5.51 x 5.51
230 (±15) µm
Sawn as pairs or adjacent pair pick – Specific request Die Thickness
9.06 (±0.59) mils
Top Metal Composition Al - 1.3µm
Back Metal Composition AuAs - 0.9µm
Page 1 of 4 www.siliconsupplies.com
NPN Transistor Bare Die – BC107B
Rev 1.0
Absolute Maximum Ratings TA = 25°C unless otherwise stated 08/01/19
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 100 mA
Junction Temperature TJ 150 °C
Storage Temperature Tstg -55 to 150 °C
Electrical Characteristics TA = 25°C unless otherwise stated
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 50 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 45 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 - - V
Collector Cut-off Current ICBO VCB = 40V, IE = 0 - - 15 nA
ON CHARACTERISTICS
VCE = 5V, IC = 2mA 200 230 450 -
Forward-Current Transfer Ratio1 hFE
VCE = 5V, IC = 10µA 40 150 - -
IC = 10mA, IB = 0.5mA - 70 250 mV
Collector-Emitter Saturation Voltage VCE(sat)
IC = 100mA, IB = 5mA - 200 600 mV
IC = 10mA, IB = 0.5mA - 700 830 mV
Base-Emitter Saturation Voltage VBE(sat)
IC = 100mA, IB = 5mA - 950 1050 mV
IC = 2mA, VCE = 5V 550 650 700 mV
Base-Emitter On Voltage VBE(on)
IC = 10mA, VCE = 5V - - 770 mV
SMALL SIGNAL CHARACTERISTICS2
Transition Frequency3 fT VCE = 5V, IC = 10mA, f = 100MHz 150 300 - MHz
VCE= 5V, IC = 2mA,
Small-Signal Current Gain hfe 240 330 500
f = 1 kHz
Output Capacitance Cobo VCB = 10V, IE = 0, f = 1MHz - 2.5 4.5 pF
Input Capacitance Cibo VBE = 10V, IC = 0, f = 1MHz - 9 - pF
VCE = 5V, IC = 200µA,
Noise Figure NF - 2 10 dB
f = 1KHz, RG=2KΩ
Note 1: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%
Note 2: Not production testing in die form. Characterized by chip design and tested in package
Note 3: fT is defined as the frequency at which |hfe| extrapolates to unity.
Page 2 of 4 www.siliconsupplies.com
NPN Transistor Bare Die – BC107B
Rev 1.0
Typical Characteristics TA = 25°C unless otherwise stated 08/01/19
Figure 1 – DC Current Gain Figure 3 – Base-Emitter Saturation Voltage versus
Collector-Emitter Saturation Voltage
Figure 3 – Current Gain Bandwidth Product Figure 4 – Static Characteristics
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NPN Transistor Bare Die – BC107B
Typical Characteristics TA = 25°C unless otherwise stated
Figure 5 – Transfer Characteristic Figure 6 – Output Capacitance
DISCLAIMER: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon
Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind.
LIFE SUPPORT POLICY: Silicon Supplies Ltd components may be used in life support devices or systems only with the express written
approval of Silicon Supplies Ltd, if a failure of such components can reasonably be expected to cause the failure of that life support device or
system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
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