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ECE/EE English
PRACTICE SHEET 01
Subject : Analog Electronics
Chapter : BJT Biasing
1. For the transistor shown = 25. The range of V1 such 3. For the circuit shown in figure given that
that 1.0 VCE 4.5 is IS = 8 × 10–16 A, = 100 and VBE = 0.8 V. What is the
operating point value?
(a) IC = 1.5 mA, VCE = 1.5 V
(b) IC = 10 mA, VCE = 1.5 V
(c) IC = 1 mA, VCE = 1.5 V
(a) 1.86 V1 3.96 V (d) IC = 4 mA, VCE = 1.5 V
(b) 2.81 V1 4.46 V
(c) 1.43 V1 79 V Common Data For Q. 4 to 5:
(d) 2.18 V1 3.69 V Consider the circuit given in figure below, It is given
that: IS1 = 2IS2 = 5 × 10–16 A
2. For the circuit shown below = 100, VBE = 0.8 V,
IS = 8 × 10–15 A. What is the operating point of the
circuit?
4. If I1 = 1.2 mA, the value of VB is
(a) 731.1 mV (b) 0 mV
(c) 730.6 mV (d) 1.5 mV
5. If circuit is at the edge of active region, what is the
(a) IC = 18.5 mA, VCE = 0.8 V value of RC
(b) IC = 18.5 mA, VCE = 1.58 V (a) 1.475 k (b) 4.95 k
(c) IC = 8 × 10–6 mA, VCE = 15.8 V (c) 0.1 k (d) None of the above
(d) IC = 18.5 mA, VCE = 2.58 V
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Common Data For Q. 6 and 7:
For the circuit given IS = 3 × 10–17 A and VA = and
IC = 1 mA.
(a) 0 A
(b) 10 A
(c) 100 A
(d) 1000 A
6. The value of VB is
(a) 26 mV Common Data For Q. 10 to 12:
(b) 809.6 mV For the circuit shown in Figure, IE = 1 mA, = 99 and
(c) 726 mV VBE = 0.7 V
(d) 0 mV
7. If VA = 5 V and IC = 1 mA for VCE = 1.5 V, the value
of VB is
(a) 802.8 mV (b) 796 mV
(c) 809.6 mV (d) 26 mV
8. Consider the circuit shown in the figure. If the of the
transistor is 30 and ICBO is 20 mA and the input voltage
is +5 V, the transistor would be operating in
10. The current through RC is
(a) 0.99 mA
(b) 1.1 mA
(c) 1.20 mA
(d) 1 mA
11. Output voltage V0 will be
(a) 16.1 Volt
(b) 14 Volt
(c) 13.9 Volt
(a) saturation region (d) None of these
(b) active region
(c) breakdown region 12. Value of resistance RF is
(d) cut-off region (a) 110.9 k
(b) 124.5 k
9. The common emitter amplifier shown in the figure is (c) 130.90 k
biased using a mA ideal current source. The
(d) None of these
approximate base current value is
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13. Consider the circuit shown in the figure below. Given Common Data For Q. 16 and 17
that saturation current I = 5 × 10–17 Amp, VBE = 800 For the circuit in Figure, = 100, VBE active = 0.7V
mV and = 100 (Vthermal = 26 mV)
The transistor Q1 is operating in
16. The value of collector current ICQ is
(a) saturation region (a) 1.31 mA
(b) cut-off region (b) 0.227 mA
(c) Reverse active Region (c) 0.360 mA
(d) Forward active Region (d) 0.302 mA
Common Data For Q. 14 to 15 17. The value of VCEQ (Collector to Emitter voltage) is
Consider the transistor circuit shown below: (a) 7.51 V (b) 0.2 V
(c) –2.49 V (d) 3.65 V
Common Data For Q. 18 and 19
For the circuit shown in figure assume
= 75, VEB active = 0.7 V
14. The value of stability factor [S(ICO)] with respect to ICO
is
(a) 90
(b) 91
(c) 1
(d) None of the above
15. The value of stability factor [S(VBE)] with respect to
VBE is 18. What is the value of collector current ICQ ?
(a) –91 S (a) 2.13 mA
(b) 1 (b) 9.9 mA
(c) –1.92 × 10–4 S (c) 1.60 mA
(d) –3.3 × 10–3 S (d) 6.6 mA
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19. What is the value of Emitter to collector voltage
VECQ?
(a) 0.2 V
(b) 13.61 V
(c) 14.16 V
(d) 15.16 V
20. If the transistor parameters are = 180 and early
voltage VA = 140 V and it is biased at ICQ = 2 mA,
Vthermal = 25.9 mV the value of hybrid - π parameter
gm, rπ and r0 are respectively.
(a) 14 A/V, 2.33 k, 90 k
(b) 14 A/V, 90 k, 233 k 23. If Q - point is in the center of the load line and
(c) 77 mA/V, 2.33 k, 70 k ICQ = 0.5 mA, the values of RC and VBB are
(d) 77.2 mA/V, 2.33 k, 70 k (a) 10 k, 0.95 V (b) 10 k, 1.45 V
(c) 48 k, 0.95 V (d) 48 k, 1.45 V
Common Data For Q.21 and 22:
Consider the circuit shown below. The transistor 24. The small signal parameters gm, rπ and r0 are
parameters are β = 120 and VA = ∞. (Vthermal = 0.0259 (a) 38.6 mA/V, ∞, 5.18 k
V) (b) 386 mA/V, 5.18 k, ∞,
(c) 19.3 mA/V, ∞, 5.18 k
(d) 19.3 mA/V, 5.18 k, ∞
Common Data For Q.25 and 27:
The transistor following amplifiers circuits has
parameters β = 100, rπ = 2.5 k.
21. The hybrid - π parameter values of gm, rπ and r0 are
(a) 24 mA/V, ∞, 5 k
(b) 24 mA/V, 5 k, ∞
(c) 48 mA/V, 10 k, 18.4 k 25. If input impedances of the two circuits are given as R1
(d) 48 mA/V, 18.4 k, 10 k and R2 respectively then
(a) R1 = 2.5 k, R2 = 2.5 k
22. The small signal voltage gain Aυ = υo / υs is (b) R1 = 2.5 k, R2 = 5 k
(a) – 4.38 (b) 4.38 (c) R1 = 500 k, R2 = 50
(c) – 1.88 (d) 1.88 (d) R1 = 500 , R2 = 500
Common Data For Q.23 and 24: 26. Ratio of voltage gain Ar1/Ar2 for the two circuit is
Consider the circuit shown below. The transistor (a) 2 (b) 0.5
parameter are β = 100 and Vi = ∞ (Vthermal = 25.9 mV) (c) 4 (d) 1
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27. Consider an amplifier circuit shown below. Transistor vo
30. The small signal voltage gain Av = is
parameters are given as β = 100 and Vthermal = 25 m V. vs
(a) – 1.96 (b) – 3.18
(c) – 4.73 (d) – 10.43
31. If the total instantaneous emitter - collector voltage is
to remain in the range 1 vEC 11 V, the maximum
undistorted swing in the output voltage is
(a) 2.58 V peak to peak
The input impedance and voltage gain respectively are (b) 5.16 V peak to peak
(a) 0.99 k, 200 (b) 390 k, 200 (c) 1.48 V peak to peak
(c) 0.99 k, – 400 (d) 390 k, 400 (d) 2.96 V peak to peak
Common Data For Q.28 and 29: Common Data For Q. 32 and 33:
For the circuit shown below transistor parameters are Consider the common Base amplifier shown below.
β = 100, VBE (ON) = 0.7 V, VA = 80 V, (Vthermal = 26 The parameters are gm = 2 mS and ro = 250 k. Figure
mV) shows the Thevenin equivalent faced by load
resistance RL.
32. Thevenin voltage vTH is
(a) 263υi (b) 132υi
28. The input impedance is (c) 346υi (d) 498υi
(a) 100 k (b) 25 k
(c) 22.2 k (d) 201 k 33. Thevenin equivalent resistance RTH is
(a) 384 k (b) 697 k
e (c) 408 k (d) 915 k
29. The small signal voltage gain Ae = is
s
34. Consider an amplifier circuit shown in figure. If the
(a) 0.96 (b) 0.99
transistor Q1 and Q2 has parameters gm1, rπ1 and gm2,
(c) 1 (d) 0.90
rπ2 respectively, then voltage gain | Aυ | is
Common Data for Q. 30 and 31
In the circuit shown below β = 100 and VA = ∞
g m1 r2 g m 2 r2
(a) (b)
1 + g m 2 r2 1 + g m 2 r2
g m1 r1 g m1 r1
(c) (d)
g m 2 r 2 1 + g m 2 r2
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35. The transistor parameters of Q1 and Q2 of circuit 39. For the circuit shown below,
shown in figure are (gm1, rπ1)
vo
The value of voltage gain Av = is
vi
The voltage gain |Av| of the following circuit is RC RC
(a) gm1, rπ1 (b) gm2, rπ1 (a) (b) −
1 g m1 + RE || r1 1 g m1 + RE || r 2
(c) gm1, rπ2 (d) gm2, rπ2
RC RC
(c) − (d) −
Common Data For Q. 36 to 39: 1 gm2 + RE || r 2 1 gm2 + RE || r1
For the circuit shown below, Vthermal = 26 mV,
VBE on = 0.7 V. Common Data For Q.40 and 41:
Consider the amplifier circuit shown below having
Vthermal = 25 mV.
o
36. The value of voltage gain Av = is
i
(a) – 3.85 (b) – 367.72
(c) – 2.99 (d) None of the above
40. What is value of collector current, IC and hybrid
io parameter, rπ respectively?
37. The value of current gain Ai = is
ii (a) 37.3 μA, 669
(a) –3.85 (b) 104.73 (b) 4.67 μA, 5.35
(c) 119.81 (d) None of the above (c) 1.13 mA, 5.35 k
(d) 4.67 mA, 669
38. The value of input impedance zi is
(a) 68.478 k 41. What are the values of C1 and C2 so that they can be
(b) 0.716 k neglected at a frequency of 50 Hz ?
(c) 1.278 k (a) 0.105 μF, 0.763 μF
(d) 59.76 k (b) 0.005 μF, 0.863 μF
(c) 0.505 μF, 0.663 μF
(d) 0.53 μF, 0.343 μF
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Common Data For Q.42 to 43: 43. Thevenin equivalent resistance Rth is
Consider the amplifier circuit shown below the (a) 3.16 k (b) 70.68 k
parameter are gm = 2, β = 100, r0 = 250 k. Figure (c) 2.67 k (d) None of the above
shows the Thevenin equivalent faced by load RL.
44. In the single - stage transistor amplifier circuit shown
in Figure, the capacitor CE is removed. Then, the ac
small - signal mid - band voltage gain of the
amplifier
42. Thevenin voltage Vth is
(a) 10 vi
(b) 90 vi
(c) vi (a) increase (b) decrease
(d) None of the above (c) is unaffected (d) drops to zero
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