LABORATORY MANUAL

PROGRAMME: DIPLOMA
SEMESTER /YEAR : 3rd/ 2nd
SUBJECT NAME: EDCI LAB

JHARKHAND RAI UNIVERSITY KAMRE, RANCHI

JHARKHAND
S.No LIST OF EXPERIMENTS TO BE CONDUCTED

1 Forward and Reverse bias characteristics of PN junction diode

2 To verify V-I characteristics of a Zener diode .

3 Set up the circuit and verify the waveforms of Half Wave Rectifier.

4 Set up the circuit and verify the waveforms of Full Wave Rectifier.

5 Input and Output characteristics of transistor in CE configuration

6 Input and Output characteristics of transistor in CB configuration

7 Input and Output characteristics of transistor in CC configuration

8 FET characteristics
Aim:
1 . To plot the Volt – Ampere characteristics of given P –
N junction Diode
2 . To Find the Static, dynamic Forward and Reverse
Resistance s of
diode .
Apparatus:
1 . Power supply
2 . Diode

3 . Resistance
4 . Ammeter

5 . Voltmeter
6 . Bread board
7 . Connecting Patch chords

Procedure:
Forward Bias:
1 . Connect the circuit as per the circuit diagram shown in

Fig (1) . For Both Silicon and Germanium Diodes .

2 . Vary the power supply in such a wa y that the readings are taken
in steps of 0 . 1V, to the maximum reading of power supply of 30V
.

3 . Note down the corresponding Ammeter and Voltmeter readings .

4 . Plot the graph between Forward voltage and current(V F and I F . )

 5 . Find the Static Forward Resistance R F = V/I Ω .

r  V 
6 . Find the Dynamic Forward Resistance F  I .

CIRCUIT DIAGRAM:
REVERSE BIAS:

Fig(2)
Tabular Column:
GERMANIUM
S . No .
V R (V) I R (µA)
Model Graph:

Reverse Bias:

1 .Connect the circuit as per the circuit diagram shown

inFig(2) .
2.
Vary the power supply in such a wa y that the
readings are taken in steps of 2V, to the maximum
reading of power supply of 30V .
3 .Note the corresponding Ammeter and Power Supply readings .
4 .Plot the graph between V R and I R .
5 .Find the Static Reverse Resistance R r
6 .Find the Dynamic Reverse Resistance
 V
rR   I 
Precautions:
1 . Don’t give voltage to the circuit beyond
prescribed range .

2 . Don’t short circuit the output terminal of power supply .

3 . Carefully connect meter terminals (+ and – ) .

 4 . Carefully connect p – n diode terminals (anode and cathode) .

Resul t:
1 . Volt – Ampere Characteristics of P - N Diode are plotted .

2 . Static Forward Resistance R F =

3 . Static Reverse Resistance R r =
4 . Dynamic Forward Resistance =
5 . Dynamic Reverse Resistance =

CIRCUIT DIAGRAM:

Fig (1)
Tabular Column:

Forw ard Bias :

VF
S . No . I F (mA)
(Volts)
Exp no :2

ZENER DIODE CHARACTERISTICS

Aim:
1 . To Plot the Volt – Ampere characteristics of a Zener diode .

2 . To Find the Zener Break down Voltage, Dynamic

Forward Resistance and Dynamic Reverse Resistance of
Zener Diode .

Apparatus :
1 . Power supply

2 . Zener Diode
3 . Ammeter
4 . Voltmeter

5. Resistor

Procedure:
Forward Bias:
1 . Connect the circuit as per the circuit diagram shown in Fig(1) .

2 . Vary the power supply voltage in such a way that the readings are
taken in steps of 0 . 1 V, to the maximum reading of power supply
of 20 V .
3 . Note down the corresponding Ammeter and Voltmeter readings .

4 . Plot the graph between V F and I F .

 5 . Find the dynamic forward resistance using

 V
rf   I 

CIRCUIT DIAGRAM:

Fig (1)
Tabular Column:
Forw ard Bias :

VF
S . No . I F (mA)
(Volts)

f ig (2) .
Tabular Column:
Reverse Bias :

S . No . V R (Volts) I R (mA)

MODEL GRAPH:

Reverse Bias:
1 . Connect the circuit as per the circuit diagram shown in

Fig (2) .
 2 . Vary the power supply voltage in such a way that the readings are
taken in steps of 2V, to the maximum reading of power supply of
20V
3 . Note down the corresponding Ammeter and Voltmeter Readings .

4 . Once break down occurs V Z remains f airly constant even though

I Z increases .
5 . Plot the graph between V R and I R .
 V
6 . Find the Dynamic Reverse Resistance rR   I 

Pr ecauti ons:
1 . Carefully connect the meter terminals (+ and – ) .
2 . Carefully connect the Zener diode terminals (Anode & Cathode) .
Exp no : 3

HALF WAVE RECTIFIER

Aim:
To Find the Ripple factor and Percentage of Regulation of a
Half Wave Rectifier with out Filter.
Apparatus:
1) Step down transformer
2) Diode
3) DRB (Decade Resistance Box)
4) Ammeter
5) Multimeter

Procedure:
1. Connect the circuit as per the circuit diagram shown in Fig(1).
2. Note down the No Load DC Voltage Vdc0 when Idc = 0
3. Vary the load resistance RL (DRB) and note down Idc and Vdc,
Vac
Using Multimeter
a). Calculate the ripple factor ( r)
 RMS values of AC component  Vac
r
Averagevalue Vdc
[(V –
b). Calculate the Percentage of Regulation = dc0 Vdc)/
V d c ] x 100 or
( V N L – V F L ) / V F L X 100

4. Draw the following graphs

i). Vdc Vs RL
ii) Vdc Vs Idc
iii) Percentage of Regulation Vs Idc. Taking Vdc on y – axis.
MODEL WAVEFORMS:

MODEL GRAPHS:
Precautions:
1. Don’t give the voltage to the circuit beyond prescribed range.
2. Don’t short circuit the output terminal.
3. Carefully connect meter & electrolytic capacitors terminals (+ and
–)
4. Carefully connect diode terminals (anodes and cathodes).

Result:
Ripple factor and Percentage of Regulation of a Half Wave
Rectifier with out
Filter is found.
Ripple Factor =
Percentage of Regulation =
 Fig (1)
Tabular Column:

No Load DC Voltage, Vdc0 =

% of
RL Idc Vdc r=
S.No. Vac (V) Regulation =
() (mA) (V) Vac/Vdc –
[(Vdco Vdc)/Vdc] X
 FULL WAVE RECTIFIER
Aim:
To Find the Ripple factor and Percentage of Regulation of a
Full Wave Rectifier without Filter.

Apparatus:
1) Step down transformer
2) Diode
3) DRB (Decade Resistance Box)
4) Ammeter
5) Multimeter

Procedure:
1. Connect the circuit as per the circuit diagram shown in fig
(1).
2. Note down the No Load DC Voltage Vdc0 when Idc = 0
3. Vary the load resistance RL (DRB) and note down Idc and
Vdc, Vac using Multimeter.
4. Calculate the ripple factor ( r)
 RMS values of AC component  Vac
r
Averagevalue Vdc
5.
Calculate the Percentage of Regulation = [( V d c 0 –
V d c ) / V d c ] x 100
( Or ) ( V N L – V F L ) / V F L X 100
6. Draw the following graphs
i). Vdc Vs RL
 ii) Vdc Vs Idc
iii) Percentage of Regulation Vs Idc. Taking Vdc on y – axis.

MODEL GRAPH
Precautions:

1. Don’t short circuit the output terminal.

2. Carefully connect meter & electrolytic capacitors terminals (+ and
–)
3. Carefully connect diode terminals (anodes and cathodes).

Result:

Ripple factor and Percentage of Regulation of a Full Wave

Rectifier with out
Filter is found.
Ripple Factor =
Percentage of Regulation =
CIRCUIT DIAGRAM:

Fig (1)

Tabular Column:
No load D . C Voltage, V d c 0 =

% of
RL Idc Vdc r= Regulation =
S.No. Vac (V) –
() (mA) (V) Vac/Vdc [(V
dco V )/V ] X
dc dc
100
 Ex.No. 5

CHARACTERISTICS OF BJT IN CE CONFIGURATION

AIM: To study and plot the transistor characteristics in CE configuration.

APPARATUS REQUIRED:
Transistor Kit,Ammeter, Voltmeter,
Resistor, Connecting Wires.

THEORY:
A BJT is a three terminal two – junction semiconductor device in which the
conduction is due to both the charge carrier. Hence it is a bipolar device and it
amplifier the sine waveform as they are transferred from input to output. BJT is
classified into two types – NPN or PNP. A NPN transistor consists of two N types
in between which a layer of P is sandwiched. The transistor consists of three
terminal emitter, collector and base. The emitter layer is the source of the charge
carriers and it is heartily doped with a moderate cross sectional area. The
collector collects the charge carries and hence moderate doping and large cross
sectional area. The base region acts a path for the movement of the
charge carriers. In order to reduce the recombination of holes and electrons the
base region is lightly doped and is of hollow cross sectional area. Normally the
transistor operates with the EB junction forward biased.

In transistor, the current is same in both junctions, which indicates that

there is a transfer of resistance between the two junctions. Hence known as
transfer resistance of transistor.

PROCEDURE:

INPUT CHARECTERISTICS:

1. Connect the circuit as per the circuit diagram.

2. Set VCE , vary VBE in regular interval of steps and note down the
Corresponding B reading. Repeat the above procedure for different
values of VCE.
3. Plot the graph: VBE Vs IB for a constant VCE.

OUTPUT CHARACTERISTICS:

1. Connect the circuit as per the circuit diagram.

2. Set IB, Vary VCE in regular interval of steps and note down the
corresponding IC reading. Repeat the above procedure for different values
of IB.
3. Plot the graph: VCE Vs IC for a constant IB.
 CIRCUIT DIAGRAM:
(0 – 30)mA
1 KΩ
- +
A

(0 – 250) μA C
+ +
10 KΩ + - (0-30)V
A BC107 V (0-30)V -
+ + B
(0-30)V (0-1)V V E -
- -

MODEL GRAPH:
INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:

µA
mA

IB I
C
VCE = 0V
VCE = 5V
IB=60μA

IB=40μA

IB=20μA

0
VBE(V) 0
VCE(V)
TABULAR COLUMN:
INPUT CHARACTERISTICS:

VCE=1V VCE=2V
VBE(V) IB(μA) VBE(V) IB(μA)

OUTPUT CHARACTERISTICS:

IB=20μA IB=40μA
VCE(V) IC(mA) VCE(V) IC(mA)

RESULT:
The transistor characteristics of a Common Emitter (CE)
configuration were plotted
Ex.No:6

CHARACTERISTICS OF BJT IN CB CONFIGURATION

AIM: To study and plot the transistor characteristics in CB configuration.

APPARATUS REQUIRED:
Transistor Kit, Ammeter, Voltmeter,
Resistor, Connecting Wires.

THEORY:

In this configuration the base is made common to both the input and out. The emitter
is given the input and the output is taken across the collector. The current gain of
this configuration is less than unity. The voltage gain of CB configuration is high. Due
to the high voltage gain, the power gain is also high. In CB configuration, Base is
common to both input and output. In CB configuration the input characteristics relate

IE and VEB for a constant VCB. Initially let VCB = 0 then the input junction is
equivalent to a forward biased diode and the characteristics resembles that of a
diode. Where VCB = +VI (volts) due to early effect IE increases and so the

characteristics shifts to the left. The output characteristics relate IC and VCB for a

constant IE. Initially IC increases and then it levels for a value IC = αIE. When IE is

increased IC also increases proportionality. Though increase in

VCB causes an increase in α, since α is a fraction, it is negligible and so I C

remains a constant for all values of VCB once it levels off.

PROCEDURE:
INPUT CHARACTERISTICS:
It is the curve between emitter current IE and emitter-base voltage VBE
at constant collector-base voltage VCB.
1. Connect the circuit as per the circuit diagram.
2. Set VCE=5V, vary VBE in steps of 0.1V and note down the
corresponding IB. Repeat the above procedure for 10V, 15V.
3. Plot the graph VBE Vs IB for a constant VCE.
4. Find the h parameters.

OUTPUT CHARACTERISTICS:
It is the curve between collector current IC and collector-base voltage VCB
at constant emitter current IE.
1. Connect the circuit as per the circuit diagram.
2. Set IB=20μA, vary VCE in steps of 1V and note down the corresponding IC.

Repeat the above procedure for 40μA, 80μA, etc.

3. Plot the graph VCE Vs IC for a constant IB.
4. Find the h parameters

RESULT:
The transistor characteristics of a Common Base (CB) configuration were
plotted and studied.
CIRCUIT DIAGRAM:
(0-1)mA (0-30)mA

+ - + -
10 KΩ 1KΩ -
+ + +
(0-30)V VEB (0-2)V (0-30)V (0-30)V
- - -
TABULAR COLUMN:
INPUT CHARACTERISTICS:

S.No. VCB = V VCB = V VCB = V

VEB IE VEB IE VEB IE

(V) (μA) (V) (μA) (V) (μA)

OUTPUT CHARACTERISTICS:

S.No. IE= mA IE= mA IE= mA

VCB Ic VCB Ic VCB Ic

(V) (mA) (V) (mA) (V) (mA)
MODEL GRAPH:
INPUT CHARACTERISTICS:

IC
(mA)
VCB1
IE2
VCB2

IE1 VEB1 VEB2 VEB (V)

OUTPUT CHARACTERISTICS:

IC
(mA) IE3

IC2 IE2
IC1
IE1

VCB1 VCB2 VCB (V)

Ex.No:7

CHARACTERISTICS OF BJT IN CC CONFIGURATION

AIM: To plot and study the transistor characteristics in CC configuration.

APPARATUS REQUIRED: Transistor Kit, Ammeter, Voltmeter,

Resistor, Connecting Wires.

THEORY
A BJT is a three terminal two – junction semiconductor device in which the
conduction is due to both the charge carrier. Hence it is a bipolar device and it
amplifier the sine waveform as they are transferred from input to output. BJT is
classified into two types – NPN or PNP. A NPN transistor consists of two N types
in between which a layer of P is sandwiched. The transistor consists of three
terminal emitter, collector and base. The emitter layer is the source of the charge
carriers and it is heartily doped with a moderate cross sectional area.
The collector collects the charge carries and hence moderate doping and large
cross sectional area. The base region acts a path for the movement of the
charge carriers. In order to reduce the recombination of holes and electrons the
base region is lightly doped and is of hollow cross sectional area. Normally the
transistor operates with the EB junction forward biased.
 In transistor, the current is same in both junctions, which indicates that
there is a transfer of resistance between the two junctions. One to this fact the
transistor is known as transfer resistance of transistor.

PROCEDURE:

INPUT CHARECTERISTICS:

1. Connect the circuit as per the circuit diagram.

2. Set VCE, vary VBE in regular interval of steps and note down the
corresponding IB reading. Repeat the above procedure for different values
of VCE.
3. Plot the graph: VBC Vs IB for a constant VCE.

OUTPUT CHARECTERISTICS:

1. Connect the circuit as per the circuit diagram.

2. Set IB, Vary VCE in regular interval of steps and note down the
corresponding IC reading. Repeat the above procedure for different values
of IB.
3. Plot the graph: VCE Vs IC for a constant IB.

RESULT:
The transistor characteristics of a Common Emitter (CC) configuration
were plotted.
 B

Bottom View BC107 Specification: BC107/50V/0.1A,0.3W,300MHz

E C

CIRCUIT DIAGRAM:
(0-30)mA
1 KΩ
+ A -

(0-250)µA +
1 KΩ + - + (0-30)V
A (0-30)V V
-
+ + -
(0-30)V V (0-30)V
- -

MODEL GRAPH:
INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:

(μA) (mA)
IB Ie
VCE=0 VCE=5V IB=60μA
IB=40μA

IB=20μA

0 VBC(V) 0 VCE(V)
TABULAR COLUMN:
INPUT CHARACTERISTICS:

VCE=1V VCE=2V

VBC(V) IB(μA) VBC(V) IB(μA)

OUTPUT CHARACTERISTICS:

IB=20μA IB=40μA

VCE(V) IE(mA) VCE(V) IE(mA)

 Exp no : 8

FET CHARACTERISTICS
Aim:
1 . To Obtain Drain and Transfer characteristics of FET connected Common
Source conf iguration .
2 . To Obtain r d , g m and  of FET .

Apparatus:

1 . Power supplies 0 – 30 V – 1 No
2 . FET BFW 10 – 1 No
3 . Voltmeter (0 – 10 V) – 2 Nos
4 . Ammeter 0 – 30 mA – 1 No

Procedure:
Transfer characteristics:
1 . Connect the circuit as per the circuit diagram shown in
Fig (1) .
2 . Set V D S = 2V by adjusting V D D .
3 . Vary the input voltage V G G and note the readings of I D and V G S .
4. Repeat the above procedure for V D S = 4V .
5. Plot the transf er characteristics V G S Vs I D for constant values
of V D S = 2V and 4V .
I D
6 . Find Trans Conductance g m = VDS = Constant
VGS
Output (or) drain characteristics:

VGS=0V V G S = – 1V V G S = – 2V
S . No
V D S ( V ) I D (mA) V D S (V) I D (mA) V D S (V) I D (mA)

Model graphs:

Output (or) drain characteristics Transfer characteristics:

 Output (or) drain characteristics:
1 . Connect the circuit as per the circuit diagram shown in Fig (1) .
2 . Set V G S = 0V by adjusting V G G .
3 . Vary the supply voltage V D D and note the readings of I D And V D
S . Take V D S =V D D .

4 . Repeat the above procedure for V G S = – 1V and – 2V .

5 . Plot the output characteristics V D S Vs I D for constant
values of V G S = 0 V, – 1V and – 2 V .

6 . Find Drain Resistance r d = VDS

VGS = Constant and
I D
Amplification Factor,  = g m x r d

Precautions:

1. Don’t short circuit the output terminal

2. Don’t give the voltage to the circuit beyond the prescribed range
3. Carefully vary the power supply
4. Carefully connect the FET terminals

Result:

Drain and Transfer characteristics of FET Connected in Common

Source conf iguration are obtained .

Trans Conductance, g m =
Drain Resistance, r d =
Amplif ication Factor,  =rd * gm