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7 N 65

The document summarizes the specifications of the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It features a drain current of 7A, drain-source voltage of 650V, and on-resistance of 1.35 ohms or less. It is suitable for high-speed switching applications in power supplies, motor controls, and DC-DC converters due to its fast switching and avalanche energy capability. Key electrical characteristics include a breakdown voltage of 650V or more, threshold voltage between 2-4V, and on-resistance of 1.35 ohms or less when operated within recommended ratings.

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Aris Romdoni
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878 views2 pages

7 N 65

The document summarizes the specifications of the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It features a drain current of 7A, drain-source voltage of 650V, and on-resistance of 1.35 ohms or less. It is suitable for high-speed switching applications in power supplies, motor controls, and DC-DC converters due to its fast switching and avalanche energy capability. Key electrical characteristics include a breakdown voltage of 650V or more, threshold voltage between 2-4V, and on-resistance of 1.35 ohms or less when operated within recommended ratings.

Uploaded by

Aris Romdoni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 7N65

FEATURES
Drain Current ID= 7A@ TC=25
Drain Source Voltage
: VDSS= 650V(Min)
Static Drain-Source On-Resistance
: RDS(on) = 1.35(Max) @VGS = 10 V
Avalanche Energy Specified
Fast Switching

APPLICATIONS
High speed switching applications in power supplies
PWM motor controls
High efficient DC to DC converters and bridge circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25


)
SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 650 V

VGS Gate-Source Voltage-Continuous 30 V

ID Drain Current-Continuous 7 A

IDM Drain Current-Single Plused 28 A

PD Total Dissipation @TC=25 142 W

Tj Max. Operating Junction Temperature 150

Tstg Storage Temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 0.88 /W

Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W

isc websitewww.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 7N65

ELECTRICAL CHARACTERISTICS
unless otherwise specified
TC=25

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 650 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.5A 1.35

IGSS Gate-Body Leakage Current VGS= 30V; VDS= 0 100 nA

IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 1 A

VSD Forward On-Voltage IS= 7A; VGS= 0 1.4 V

Gfs Forward Transconductance VDS= 40VID= 3.5A 8 S

isc websitewww.iscsemi.com 2 isc & iscsemi is registered trademark

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