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2SK955

The 2SK955 is an N-channel MOSFET transistor from INCHANGE Semiconductor suitable for high voltage, high speed applications. It has a drain current of 5A, drain-source voltage of 800V, and fast switching speed. The transistor is designed for uses in off-line switching power supplies, UPS systems, motor controls, and devices that require relay or solenoid drivers.

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173 views2 pages

2SK955

The 2SK955 is an N-channel MOSFET transistor from INCHANGE Semiconductor suitable for high voltage, high speed applications. It has a drain current of 5A, drain-source voltage of 800V, and fast switching speed. The transistor is designed for uses in off-line switching power supplies, UPS systems, motor controls, and devices that require relay or solenoid drivers.

Uploaded by

Armando Hernandez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 2SK955

DESCRIPTION
·Drain Current –ID=5A@ TC=25℃
·Drain Source Voltage-
: VDSS=800V(Min)
·Fast Switching Speed

APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL ARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 800 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-continuous@ TC=25℃ 5 A

Ptot Total Dissipation@TC=25℃ 125 W

Tj Max. Operating Junction Temperature 80 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

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INCHANGE Semiconductor isc Product Specification

isc N-Channel Mosfet Transistor 2SK955

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 800 V

VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 10mA 2.1 3.0 4.0 V

RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=2.5A 1.5 2.0 Ω

IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 500 uA

ton Turn-on time VGS=10V;ID=2.5A; 110 170 ns

RL=50Ω
toff Turn-off time 420 530 ns

VSD Diode Forward Voltage IF=5A; VGS=0 1.0 1.5 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

PDF pdfFactory Pro www.fineprint.cn

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