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Isc P-Channel MOSFET Transistor FRM9140: INCHANGE Semiconductor Product Specification

This document provides product specifications for the INCHANGE Semiconductor isc P-Channel MOSFET transistor, model FRM9140. The key specifications are that it can handle -11A of continuous current at -100V with an RDS(on) of 0.3 ohms. It is designed to be radiation hard and minimize characteristic changes from exposure to total dose, neutrons, heavy ions and high dose rates. Maximum ratings include a drain-source voltage of -100V, gate-source voltage of ±20V, and junction temperature range of -55 to 150 degrees Celsius.

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14 views2 pages

Isc P-Channel MOSFET Transistor FRM9140: INCHANGE Semiconductor Product Specification

This document provides product specifications for the INCHANGE Semiconductor isc P-Channel MOSFET transistor, model FRM9140. The key specifications are that it can handle -11A of continuous current at -100V with an RDS(on) of 0.3 ohms. It is designed to be radiation hard and minimize characteristic changes from exposure to total dose, neutrons, heavy ions and high dose rates. Maximum ratings include a drain-source voltage of -100V, gate-source voltage of ±20V, and junction temperature range of -55 to 150 degrees Celsius.

Uploaded by

Testronicparts
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isc Product Specification

INCHANGE Semiconductor

isc P-Channel MOSFET Transistor

FRM9140

DESCRIPTION
-11A, -100V, RDS(on) = 0.3
Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS
It is specially designed and processed to
exhibit minimal characteristic changes to total dose and neutron
exposures. Design and processing efforts are also directed to
enhance survival to heavy ion (SEE) and/or dose rate
(GAMMA DOT) exposure.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

-100

VGS

Gate-Source Voltage

20

Drain Current-continuous@ TC=37

-11

Total Dissipation@TC=25

125

Max. Operating Junction Temperature

-55~150

Storage Temperature Range

-55~150

ID
Ptot
Tj
Tstg

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

/W

isc websitewww.iscsemi.cn

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isc Product Specification

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

FRM9140

ELECTRICAL CHARACTERISTICS (TC=25)


SYMBOL

PARAMETER

CONDITIONS

MIN

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= -1mA

-100

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID= -1mA

-2.0

RDS(ON)

Drain-Source On-stage Resistance

IGSS

MAX

UNIT
V

-4

VGS= -10V; ID= -7A

0.3

Gate Source Leakage Current

VGS= 20V;VDS= 0

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= -100V; VGS= 0

-1

mA

VSD

Diode Forward Voltage

IF= -11A; VGS= 0

-1.8

isc websitewww.iscsemi.cn

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