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IRF221 N-Channel MOSFET Specs

This document specifies an IRF221 N-channel MOSFET transistor made by INCHANGE Semiconductor. Key specifications include a maximum drain-source voltage of 150V, continuous drain current of 5A, and on-resistance of 0.8 ohms or less. It is intended for use in high-speed switching power supplies and other applications. Absolute maximum ratings and electrical characteristics are provided.

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36 views2 pages

IRF221 N-Channel MOSFET Specs

This document specifies an IRF221 N-channel MOSFET transistor made by INCHANGE Semiconductor. Key specifications include a maximum drain-source voltage of 150V, continuous drain current of 5A, and on-resistance of 0.8 ohms or less. It is intended for use in high-speed switching power supplies and other applications. Absolute maximum ratings and electrical characteristics are provided.

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Testronicparts
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isc Product Specification

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IRF221

DESCRIPTION
Drain Current ID=5A@ TC=25
Drain Source Voltage: VDSS= 150V(Min)
Static Drain-Source On-Resistance
: RDS(on) =0.8(Max)
High Speed Applications
APPLICATIONS
Switching power supplies

ABSOLUTE MAXIMUM RATINGS(Ta=25)


SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

150

VGS

Gate-Source Voltage

20

Drain Current-continuous@ TC=25

Total Dissipation@TC=25

40

Max. Operating Junction Temperature

150

-55~150

MAX

UNIT

3.12

/W

30

/W

ID
Ptot
Tj
Tstg

Storage Temperature Range

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

Rth j-c

Thermal Resistance,Junction to Case

Rth j-a

Thermal Resistance,Junction to Ambient

isc websitewww.iscsemi.cn
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isc Product Specification

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IRF221

ELECTRICAL CHARACTERISTICS (TC=25)


SYMBOL

PARAMETER

CONDITIONS

MIN

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250A

150

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250A

2.0

RDS(ON)

Drain-Source On-stage Resistance

IGSS

TYPE

MAX

UNIT
V

4.0

VGS=10V; ID=2.5A

0.8

Gate Source Leakage Current

VGS=20V;VDS=0

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=150V; VGS=0

250

uA

VSD

Diode Forward Voltage

IS=5A; VGS=0

2.0

Ciss

Input Capacitance

600
VDS=25V;

Crss

Reverse Transfer Capacitance

VGS=0V;

80

pF

fT=1MHz
Coss
tr
td(on)

Output Capacitance

300

Rise Time

60

Turn-on Delay Time

ID=2.5A;

40

VDD=100V;
tf
td(off)

Fall Time
Turn-off Delay Time

isc websitewww.iscsemi.cn
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RL=50

ns
60
100

www.fineprint.cn

isc & iscsemi is registered trademark

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