®

RT8010/A

1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter

General Description Features
The RT8010/A is a high efficiency Pulse-Width-Modulated 2.5V to 5.5V Input Range
(PWM) step-down DC/DC converter. Capable of delivering Output Voltage (Adjustable Output From 0.6V to VIN)
1A output current over a wide input voltage range from ` RT8010 : 1V, 1.2V, 1.5V, 1.6V, 1.8V, 2.5V and 3.3V

2.5V to 5.5V, the RT8010/A is ideally suited for portable Fixed/Adjustable Output Voltage
electronic devices that are powered from 1-cell Li-ion ` RT8010A Adjustable Output Voltage Only

battery or from other power sources such as cellular 1A Output Current

phones, PDAs and hand-held devices. 95% Efficiency
No Schottky Diode Required
Two operating modes are available including : PWM/Low-
1.5MHz Fixed-Frequency PWM Operation
Dropout autoswitch and shutdown modes. The Internal
Small 6-Lead WDFN and 16-Lead WQFN Package
synchronous rectifier with low RDS(ON) dramatically reduces
RoHS Compliant and 100% Lead (Pb)-Free
conduction loss at PWM mode. No external Schottky
diode is required in practical application.
Applications
The RT8010/A enters Low Dropout mode when normal
Mobile Phones
PWM cannot provide regulated output voltage by
Personal Information Appliances
continuously turning on the upper P-MOSFET. RT8010/A
Wireless and DSL Modems
enter shut-down mode and consumes less than 0.1μA
MP3 Players
when EN pin is pulled low.
Portable Instruments
The switching ripple is easily smoothed-out by small
package filtering elements due to a fixed operating Ordering Information
RT8010/A(- )
frequency of 1.5MHz. This along with small WDFN-6L 2x2
Package Type
and WQFN-16L 3x3 package provides small PCB area QW : WDFN/WQFN (W-Type)
application. Other features include soft start, lower internal
Lead Plating System
reference voltage with 2% accuracy, over temperature P : Pb Free
protection, and over current protection. G : Green (Halogen Free and Pb Free)
Output Voltage
Pin Configurations Default : Adjustable (RT8010/A)
(TOP VIEW) Fixed (RT8010)
LX
LX
LX
IC

10 : 1.0V
16 15 14 13
12 : 1.2V
GND 1 12 VIN
15 : 1.5V
GND 2 11VIN
IC 1 6 FB/VOUT 16 : 1.6V
GND 3 10VIN
EN 2 5 GND 17 18 : 1.8V
7 FB/VOUT 4 9 VIN
VIN 3 4 LX 25 : 2.5V
5 6 7 8
33 : 3.3V
GND
IC
EN
IC

WQFN-16L 3x3
WDFN-6L 2x2 (RT8010) WQFN-16L 3x3 (RT8010A) WDFN-6L 2x2
Note :
Marking Information Richtek products are :
` RoHS compliant and compatible with the current require-
For marking information, contact our sales representative
ments of IPC/JEDEC J-STD-020.
directly or through a Richtek distributor located in your
` Suitable for use in SnPb or Pb-free soldering processes.
area.
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RT8010/A
Typical Application Circuit
L
2.2µH
VIN 3 4
VIN LX VOUT
2.5V to 5.5V
CIN RT8010/A
4.7µF 2 6
EN VOUT COUT
10µF
1 5
IC GND

Figure 1. Fixed Voltage Regulator

L
2.2µH
VIN 3 4
VIN LX VOUT
2.5V to 5.5V
CIN
C1
4.7µF RT8010/A R1
2 6 COUT
EN FB
10µF
1 5
IC GND IR2
R2
VOUT = VREF x ⎛⎜ 1 + R1 ⎞⎟
⎝ R2 ⎠
with R2 = 300kΩ to 60kΩ so the IR2 = 2μA to 10μA,

and (R1 x C1) should be in the range between 3x10-6 and 6x10-6 for component selection.

Figure 2. Adjustable Voltage Regulator

Layout Guide
RT8010/A_ADJ
RT8010/A_FIX
IC 1 6 FB Output
IC 1 6 VOUT Output capacitor capacitor
must be near EN 2 5 GND must be near
EN 2 5 GND RT8010 L1 RT8010/A
L1
VIN 3 4 LX
VIN 3 4 LX
COUT R1
COUT
LX should be
CIN connected to R2
CIN
LX should be connected Inductor by wide
CIN must be placed to Inductor by wide and CIN must be placed and short trace,
to the VIN as close short trace, keep to the VIN as close keep sensitive
as possible. sensitive components as possible. components away
away from this trace. from this trace.

Figure 3
Layout note :
1. The distance that CIN connects to VIN is as close as possible (Under 2mm).
2. COUT should be placed near RT8010/A.

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 RT8010/A
Functional Pin Description
Pin No.
Pin Name Pin Function
RT8010 RT8010A
Internal Connection. Leave floating and do not make connection
1 6, 8, 16 IC
to this pin.
2 7 EN Chip Enable (Active High).
3 9, 10, 11, 12 VIN Power Input. (Pin 9 and Pin 10 must be connected with Pin 11).
4 13, 14, 15 LX Pin for Switching. (Pin 13 must be connected with Pin 14).
5 1, 2, 3, 5 GND Ground.
6 4 FB/VOUT Feedback/Output Voltage.
Ground. The exposed pad must be soldered to a large PCB and
7 (Exposed Pad) 17 (Exposed Pad) GND
connected to GND for maximum thermal dissipation.

Function Block Diagram

EN VIN

RS1
OSC &
Current
Shutdown
Limit
Control
Detector
Slope
Compensation
Current
Sense

Control Driver LX
Logic
PWM
FB/VOUT Error Comparator
Amplifier
RC

COMP UVLO & RS2

Power Good
Detector VREF

GND

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RT8010/A
Absolute Maximum Ratings (Note 1)
Supply Input Voltage ------------------------------------------------------------------------------------------------- 6.5V
EN, FB Pin Voltage -------------------------------------------------------------------------------------------------- −0.3V to VIN
LX Pin Switch Voltage ----------------------------------------------------------------------------------------------- −0.3V to (VIN + 0.3V)
<20ns ------------------------------------------------------------------------------------------------------------------- −4.5V to 7.5V
LX Pin Switch Current ----------------------------------------------------------------------------------------------- 2A
Power Dissipation, PD @ TA = 25°C
WDFN-6L 2x2 --------------------------------------------------------------------------------------------------------- 0.833W
WQFN-16L 3x3 ------------------------------------------------------------------------------------------------------- 1.47W
Package Thermal Resistance (Note 2)
WDFN-6L 2x2, θJA ---------------------------------------------------------------------------------------------------- 120°C/W
WDFN-6L 2x2, θJC --------------------------------------------------------------------------------------------------- 20°C/W
WQFN-16L 3x3, θJA -------------------------------------------------------------------------------------------------- 68°C/W
WQFN-16L 3x3, θJC ------------------------------------------------------------------------------------------------- 7.5°C/W
Lead Temperature (Soldering, 10 sec.) -------------------------------------------------------------------------- 260°C
Storage Temperature Range --------------------------------------------------------------------------------------- −65°C to 150°C
Junction Temperature ------------------------------------------------------------------------------------------------ 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model) ----------------------------------------------------------------------------------------- 2kV

Recommended Operating Conditions (Note 4)

Supply Input Voltage ------------------------------------------------------------------------------------------------- 2.5V to 5.5V
Junction Temperature Range --------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range --------------------------------------------------------------------------------------- −40°C to 85°C

Electrical Characteristics
(VIN = 3.6V, VOUT = 2.5V, L = 2.2μH, CIN = 4.7μF, COUT = 10μF, TA = 25°C, IMAX = 1A unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Voltage Range VIN 2.5 -- 5.5 V
Quiescent Current IQ IOUT = 0mA, VFB = VREF + 5% -- 50 70 μA
Shutdown Current I SHDN EN = GND -- 0.1 1 μA
Reference Voltage VREF For Adjustable Output Voltage 0.588 0.6 0.612 V
Adjustable Output Range VOUT (Note 5) VREF -- VIN − 0.2V V
VIN = 2.5V to 5.5V, VOUT = 1V
ΔVOUT −3 -- 3
0A < IOUT < 1A
VIN = 2.5V to 5.5V, VOUT = 1.2V
ΔVOUT −3 -- 3
0A < IOUT < 1A
Output Voltage VIN = 2.5V to 5.5V, VOUT = 1.5V
Fix ΔVOUT −3 -- 3 %
Accuracy 0A < IOUT < 1A
VIN = 2.5V to 5.5V, VOUT = 1.6V
ΔVOUT −3 -- 3
0A < IOUT < 1A
VIN = 2.5V to 5.5V, VOUT = 1.8V
ΔVOUT −3 -- 3
0A < IOUT < 1A

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 RT8010/A
Parameter Symbol Test Conditions Min Typ Max Unit
VIN = VOUT + ΔV to 5.5V (Note 6)
ΔVOUT −3 -- 3
VOUT = 2.5V, 0A < IOUT < 1A
Fix %
Output Voltage VIN = VOUT + ΔV to 5.5V (Note 6)
Accuracy ΔVOUT −3 -- 3
VOUT = 3.3V, 0A < IOUT < 1A
VIN = VOUT + ΔV to 5.5V (Note 6)
Adjustable ΔVOUT −3 -- 3 %
0A < IOUT < 1A
FB Input Current IFB VFB = VIN −50 -- 50 nA
VIN = 3.6V -- 0.28 --
P-MOSFET RON RDS(ON)_P IOUT = 200mA Ω
VIN = 2.5V -- 0.38 --
VIN = 3.6V -- 0.25 --
N-MOSFET RON RDS(ON)_N IOUT = 200mA Ω
VIN = 2.5V -- 0.35 --
P-Channel Current Limit ILIM_P VIN = 2.5V to 5.5 V 1.4 1.5 -- A
EN High-Level Input Voltage VEN_H VIN = 2.5V to 5.5V 1.5 -- --
V
EN Low-Level Input Voltage VEN_L VIN = 2.5V to 5.5V -- -- 0.4
Under Voltage Lock Out threshold UVLO -- 1.8 -- V
Hysteresis -- 0.1 -- V
Oscillator Frequency fOSC VIN = 3.6V, IOUT = 100mA 1.2 1.5 1.8 MHz
Thermal Shutdown Temperature TSD -- 160 -- °C
Max. Duty Cycle 100 -- -- %
LX Leakage Current VIN = 3.6V, VLX = 0V or VLX = 3.6V −1 -- 1 μA

Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. Guarantee by design.
Note 6. ΔV = IOUT x PRDS(ON)

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RT8010/A
Typical Operating Characteristics
Efficiency vs. Output Current Efficiency vs. Output Current
100 100
90 VIN = 3.6V 90
80 VIN = 4.2V 80
VIN = 5V
70 70

Efficiency (%)
Efficiency (%)

VIN = 5V
60 60 VIN = 3.3V
50 VIN = 2.5V
50
40 40

30 30
20 20

10 10
VOUT = 3.3V, COUT = 4.7μF, L = 4.7μH VOUT = 1.2V, COUT = 4.7μF, L = 4.7μH
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Output Current (A) Output Current (A)

Efficiency vs. Output Current UVLO Voltage vs. Temperature

100 2.0
90
1.9 Rising
80
1.8
Input Voltage (V)

70 VIN = 5V
Efficiency (%)

60 VIN = 3.3V 1.7

VIN = 2.5V
50 1.6 Falling
40
1.5
30
1.4
20
10 1.3
VOUT = 1.2V, COUT = 10μF, L = 2.2μH VOUT = 1.2V, IOUT = 0A
0 1.2
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -40 -25 -10 5 20 35 50 65 80 95 110 125
Output Current (A) Temperature (°C)

EN Pin Threshold vs. Input Voltage EN Pin Threshold vs. Temperature

1.20 1.6
1.15 1.5
1.10 1.4
EN Pin Threshold (V)
EN Pin Threshold (V)

1.05 1.3
1.00 Rising 1.2
0.95 1.1
0.90 1.0
0.85 Falling 0.9
Rising
0.80 0.8 Falling
0.75 0.7
0.70 0.6
0.65 0.5
VOUT = 1.2V, IOUT = 0A VIN = 3.6V, VOUT = 1.2V, IOUT = 0A
0.60 0.4
2.5 2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5 -40 -25 -10 5 20 35 50 65 80 95 110 125
Input Voltage (V) Temperature (°C)

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 RT8010/A

Output Voltage vs. Load Current Output Voltage vs. Temperature

1.230 1.25
1.225 1.24
1.220 1.23

Output Voltage (V)

Output Voltage (V)

1.215 1.22
VIN = 5V
1.210 1.21
1.205 VIN = 3.6V 1.20
1.200 1.19
1.195 1.18
1.190 1.17
1.185 1.16
VIN = 3.6V, IOUT = 0A
1.180 1.15
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -40 -25 -10 5 20 35 50 65 80 95 110 125
Load Current (A) Temperature (°C)

Frequency vs. Input Voltage Frequency vs. Temperature

1.60 1.60

1.55 1.55

1.50
Frequency (kHz)1

1.50
Frequency (kHz)

1.45 1.45

1.40 1.40

1.35 1.35

1.30 1.30

1.25 1.25
VIN = 3.6V, VOUT = 1.2V, IOUT = 300mA VIN = 3.6V, VOUT = 1.2V, IOUT = 300mA
1.20 1.20
2.5 2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5 -40 -25 -10 5 20 35 50 65 80 95 110 125
Input Voltage (V) Temperature (°C)

Output Current Limit vs. Input Voltage Output Current Limit vs. Temperature
2.6 2.6
2.5 2.5 VIN = 5V
2.4 2.4
Output Current Limit (A)
Output Current Limit (A)

2.3 2.3 VIN = 3.6V

2.2 2.2
2.1 2.1
VIN = 3.3V
2.0 2.0
1.9 1.9
1.8 1.8
1.7 1.7
1.6 1.6
VOUT = 1.2V @ TA = 20°C VOUT = 1.2V
1.5 1.5
2.5 2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5 -40 -25 -10 5 20 35 50 65 80 95 110 125
Input Voltage (V) Temperature (°C)

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RT8010/A

Power On from EN Power On from EN

VIN = 3.6V, VOUT = 1.2V, IOUT = 10mA VIN = 3.6V, VOUT = 1.2V, IOUT = 1A

VEN VEN
(2V/Div) (2V/Div)

VOUT VOUT
(1V/Div) (1V/Div)

I IN I IN
(500mA/Div) (500mA/Div)

Time (100μs/Div) Time (100μs/Div)

Power On from VIN Power Off from EN

VEN = 3V, VOUT = 1.2V, ILX = 1A VIN = 3.6V, VOUT = 1.2V, ILX = 1A

VIN VEN
(2V/Div) (2V/Div)

VOUT VOUT
(1V/Div) (1V/Div)

ILX ILX
(1A/Div) (1A/Div)

Time (250μs/Div) Time (100μs/Div)

Load Transient Response Load Transient Response

VIN = 3.6V, VOUT = 1.2V VIN = 3.6V, VOUT = 1.2V
IOUT = 50mA to 1A IOUT = 50mA to 0.5A

VOUT ac VOUT ac
(50mV/Div) (50mV/Div)

IOUT IOUT
(500mA/Div) (500mA/Div)

Time (50μs/Div) Time (50μs/Div)

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 RT8010/A

Load Transient Response Load Transient Response

VIN = 5V, VOUT = 1.2V VIN = 5V, VOUT = 1.2V
IOUT = 50mA to 1A IOUT = 50mA to 0.5A

VOUT ac VOUT ac
(50mV/Div) (50mV/Div)

IOUT IOUT
(500mA/Div) (500mA/Div)

Time (50μs/Div) Time (50μs/Div)

Output Ripple Voltage Output Ripple Voltage

VIN = 3.6V, VOUT = 1.2V VIN = 5V, VOUT = 1.2V
IOUT = 1A IOUT = 1A

VOUT VOUT
(10mV/Div) (10mV/Div)

VLX VLX
(2V/Div) (2V/Div)

Time (500ns/Div) Time (500ns/Div)

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RT8010/A
Applications Information
The basic RT8010/A application circuit is shown in Typical current is exceeded. This results in an abrupt increase in
Application Circuit. External component selection is inductor ripple current and consequent output voltage ripple.
determined by the maximum load current and begins with Do not allow the core to saturate!
the selection of the inductor value and operating frequency Different core materials and shapes will change the size/
followed by CIN and COUT. current and price/current relationship of an inductor.

Inductor Selection Toroid or shielded pot cores in ferrite or permalloy materials

For a given input and output voltage, the inductor value are small and don't radiate energy but generally cost more
and operating frequency determine the ripple current. The than powdered iron core inductors with similar
ripple current ΔIL increases with higher VIN and decreases characteristics. The choice of which style inductor to use
with higher inductance. mainly depends on the price vs size requirements and
any radiated field/EMI requirements.
ΔIL = ⎡⎢ OUT ⎤⎥ × ⎡⎢1− OUT ⎤⎥
V V
⎣ f ×L ⎦ ⎣ VIN ⎦
CIN and COUT Selection
Having a lower ripple current reduces the ESR losses in The input capacitance, C IN, is needed to filter the
the output capacitors and the output voltage ripple. Highest trapezoidal current at the source of the top MOSFET. To
efficiency operation is achieved at low frequency with small prevent large ripple voltage, a low ESR input capacitor
ripple current. This, however, requires a large inductor. sized for the maximum RMS current should be used. RMS
A reasonable starting point for selecting the ripple current current is given by :
is ΔIL = 0.4(IMAX). The largest ripple current occurs at the V VIN
IRMS = IOUT(MAX) OUT −1
VIN VOUT
highest VIN. To guarantee that the ripple current stays
below a specified maximum, the inductor value should be
This formula has a maximum at VIN = 2VOUT, where
chosen according to the following equation :
I RMS = I OUT/2. This simple worst-case condition is
⎡ VOUT ⎤ ⎡ VOUT ⎤
⎥ × ⎢1 − VIN(MAX) ⎥
L= ⎢ commonly used for design because even significant
⎣ f × Δ IL(MAX) ⎦ ⎣ ⎦ deviations do not offer much relief. Note that ripple current
ratings from capacitor manufacturers are often based on
Inductor Core Selection only 2000 hours of life which makes it advisable to further
Once the value for L is known, the type of inductor must derate the capacitor, or choose a capacitor rated at a higher
be selected. High efficiency converters generally cannot temperature than required. Several capacitors may also
afford the core loss found in low cost powdered iron cores, be paralleled to meet size or height requirements in the
forcing the use of more expensive ferrite or mollypermalloy design.
cores. Actual core loss is independent of core size for a The selection of COUT is determined by the Effective Series
fixed inductor value but it is very dependent on the Resistance (ESR) that is required to minimize voltage
inductance selected. As the inductance increases, core ripple and load step transients, as well as the amount of
losses decrease. Unfortunately, increased inductance bulk capacitance that is necessary to ensure that the
requires more turns of wire and therefore copper losses control loop is stable. Loop stability can be checked by
will increase. viewing the load transient response as described in a later
Ferrite designs have very low core losses and are preferred section. The output ripple, ΔVOUT, is determined by :
at high switching frequencies, so design goals can ΔVOUT ≤ ΔIL ⎡⎢ESR+ 1 ⎤
concentrate on copper loss and preventing saturation. ⎣ 8fCOUT ⎥⎦
Ferrite core material saturates “hard”, which means that
inductance collapses abruptly when the peak design

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 RT8010/A
The output ripple is highest at maximum input voltage For adjustable voltage mode, the output voltage is set by
since ΔIL increases with input voltage. Multiple capacitors an external resistive divider according to the following
placed in parallel may be needed to meet the ESR and equation :
RMS current handling requirements. Dry tantalum, special VOUT = VREF ⎛⎜ 1+ R1 ⎞⎟
polymer, aluminum electrolytic and ceramic capacitors are ⎝ R2 ⎠
where VREF is the internal reference voltage (0.6V typ.)
all available in surface mount packages. Special polymer
capacitors offer very low ESR but have lower capacitance Efficiency Considerations
density than other types. Tantalum capacitors have the The efficiency of a switching regulator is equal to the output
highest capacitance density but it is important to only power divided by the input power times 100%. It is often
use types that have been surge tested for use in switching useful to analyze individual losses to determine what is
power supplies. Aluminum electrolytic capacitors have limiting the efficiency and which change would produce
significantly higher ESR but can be used in cost-sensitive the most improvement. Efficiency can be expressed as :
applications provided that consideration is given to ripple
Efficiency = 100% − (L1+ L2+ L3+ ...)
current ratings and long term reliability. Ceramic capacitors
have excellent low ESR characteristics but can have a where L1, L2, etc. are the individual losses as a percentage
high voltage coefficient and audible piezoelectric effects. of input power. Although all dissipative elements in the
The high Q of ceramic capacitors with trace inductance circuit produce losses, two main sources usually account
can also lead to significant ringing. for most of the losses : VIN quiescent current and I2R
losses.
Using Ceramic Input and Output Capacitors The VIN quiescent current loss dominates the efficiency
Higher values, lower cost ceramic capacitors are now loss at very low load currents whereas the I2R loss
becoming available in smaller case sizes. Their high ripple dominates the efficiency loss at medium to high load
current, high voltage rating and low ESR make them ideal currents. In a typical efficiency plot, the efficiency curve
for switching regulator applications. However, care must at very low load currents can be misleading since the
be taken when these capacitors are used at the input and actual power lost is of no consequence.
output. When a ceramic capacitor is used at the input
1. The VIN quiescent current appears due to two factors
and the power is supplied by a wall adapter through long
including : the DC bias current as given in the electrical
wires, a load step at the output can induce ringing at the
characteristics and the internal main switch and
input, VIN. At best, this ringing can couple to the output
synchronous switch gate charge currents. The gate charge
and be mistaken as loop instability. At worst, a sudden
current results from switching the gate capacitance of the
inrush of current through the long wires can potentially
internal power MOSFET switches. Each time the gate is
cause a voltage spike at VIN large enough to damage the
switched from high to low to high again, a packet of charge
part.
ΔQ moves from VIN to ground.
Output Voltage Programming The resulting ΔQ/Δt is the current out of VIN that is typically
The resistive divider allows the FB pin to sense a fraction larger than the DC bias current. In continuous mode,
of the output voltage as shown in Figure 4. IGATECHG = f (QT + QB)
VOUT
where QT and QB are the gate charges of the internal top
and bottom switches. Both the DC bias and gate charge
R1
FB losses are proportional to VIN and thus their effects will
RT8010/A R2
be more pronounced at higher supply voltages.
GND

Figure 4. Setting the Output Voltage

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RT8010/A
2. I2R losses are calculated from the resistances of the The Figure 5 of derating curves allows the designer to
internal switches, RSW and external inductor RL. In see the effect of rising ambient temperature on the
continuous mode, the average output current flowing maximum power allowed.
through inductor L is “chopped” between the main switch 1.6

Maximum Power Dissipation (W)1

and the synchronous switch. Thus, the series resistance Four Layers PCB
1.4
looking into the LX pin is a function of both top and bottom
1.2
MOSFET RDS(ON) and the Duty Cycle (DC) as follows :
WQFN-16L 3x3
1.0
RSW = RDS(ON)TOP x DC + RDS(ON)BOT x (1 − DC)
0.8
The RDS(ON) for both the top and bottom MOSFETs can be WDFN-6L 2x2
obtained from the Typical Performance Characteristics 0.6

curves. Thus, to obtain I2R losses, simply add RSW to RL 0.4

and multiply the result by the square of the average output
0.2
current.
0.0
Other losses including CIN and COUT ESR dissipative 0 25 50 75 100 125
losses and inductor core losses generally account for less Ambient Temperature (°C)
than 2% of the total loss. Figure 5. Derating Curve of Maximum Power Dissipation

Thermal Considerations
The maximum power dissipation depends on the thermal Checking Transient Response
resistance of IC package, PCB layout, the rate of The regulator loop response can be checked by looking
surroundings airflow and temperature difference between at the load transient response. Switching regulators take
junction to ambient. The maximum power dissipation can several cycles to respond to a step in load current. When
be calculated by following formula : a load step occurs, VOUT immediately shifts by an amount
equal to ΔILOAD (ESR), where ESR is the effective series
PD(MAX) = (TJ(MAX) − TA) / θJA
resistance of COUT. ΔILOAD also begins to charge or
Where T J(MAX) is the maximum operation junction discharge COUT generating a feedback error signal used
temperature, TA is the ambient temperature and the θJA is by the regulator to return VOUT to its steady-state value.
the junction to ambient thermal resistance. During this recovery time, VOUT can be monitored for
For recommended operating conditions specification, overshoot or ringing that would indicate a stability problem.
where TJ(MAX) is the maximum junction temperature of the
die and TA is the maximum ambient temperature. The Layout Considerations
junction to ambient thermal resistance θJA is layout Follow the PCB layout guidelines for optimal performance
dependent. For WDFN-6L 2x2 packages, the thermal of RT8010/A.
resistance θJA is 120°C/W on the standard JEDEC 51-7 ` For the main current paths as indicated in bold lines in
four layers thermal test board. Figure 6, keep their traces short and wide.
The maximum power dissipation at TA = 25°C can be ` Put the input capacitor as close as possible to the device
calculated by following formula : pins (VIN and GND).
PD(MAX) = (125°C − 25°C) / 120°C/W = 0.833W for ` LX node is with high frequency voltage swing and should
WDFN-6L 2x2 packages be kept small area. Keep analog components away from
The maximum power dissipation depends on operating LX node to prevent stray capacitive noise pick-up.
ambient temperature for fixed T J(MAX) and thermal
resistance θJA.

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www.richtek.com DS8010/A-09 September 2012

12
 RT8010/A
` Connect feedback network behind the output capacitors.
Keep the loop area small. Place the feedback
components near the RT8010/A.
` An example of 2-layer PCB layout is shown in Figure 7
to Figure 8 for reference.
VIN VOUT
L1
RT8010/A
3 4
VIN LX Figure 7. Top Layer
C2
1 R1
IC
6
FB/VOUT
C3
2 5
C1 EN GND R2

VIN

R3

Figure 8. Bottom Layer

Figure 6. EVB Schematic

Table 1. Recommended Inductors

Inductance DCR Dimensions

Supplier Current Rating (mA) Series
(μH) (mΩ) (mm)
TAIYO YUDEN 2.2 1480 60 3.00 x 3.00 x 1.50 NR 3015
GOTREND 2.2 1500 58 3.85 x 3.85 x 1.80 GTSD32
Sumida 2.2 1500 75 4.50 x 3.20 x 1.55 CDRH2D14
Sumida 4.7 1000 135 4.50 x 3.20 x 1.55 CDRH2D14
TAIYO YUDEN 4.7 1020 120 3.00 x 3.00 x 1.50 NR 3015
GOTREND 4.7 1100 146 3.85 x 3.85 x 1.80 GTSD32

Table 2. Recommended Capacitors for CIN and COUT

Capacitance
Supplier Package Part Number
(μF)
TDK 4.7 0603 C1608JB0J475M
MURATA 4.7 0603 GRM188R60J475KE19
TAIYO YUDEN 4.7 0603 JMK107BJ475RA
TAIYO YUDEN 10 0603 JMK107BJ106MA
TDK 10 0805 C2012JB0J106M
MURATA 10 0805 GRM219R60J106ME19
MURATA 10 0805 GRM219R60J106KE19
TAIYO YUDEN 10 0805 JMK212BJ106RD

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DS8010/A-09 September 2012 www.richtek.com

13
RT8010/A
Outline Dimension

D D2

E E2

SEE DETAIL A
1

e
b 2 1 2 1
A
A3
A1
DETAIL A
Pin #1 ID and Tie Bar Mark Options

Note : The configuration of the Pin #1 identifier is optional,

but must be located within the zone indicated.

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 0.700 0.800 0.028 0.031
A1 0.000 0.050 0.000 0.002
A3 0.175 0.250 0.007 0.010
b 0.200 0.350 0.008 0.014
D 1.950 2.050 0.077 0.081
D2 1.000 1.450 0.039 0.057
E 1.950 2.050 0.077 0.081
E2 0.500 0.850 0.020 0.033
e 0.650 0.026
L 0.300 0.400 0.012 0.016

W-Type 6L DFN 2x2 Package

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www.richtek.com DS8010/A-09 September 2012

14
 RT8010/A

SEE DETAIL A
D D2

L
1

E E2

1 1

2 2
e b

A DETAIL A
A3 Pin #1 ID and Tie Bar Mark Options
A1
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 0.700 0.800 0.028 0.031
A1 0.000 0.050 0.000 0.002
A3 0.175 0.250 0.007 0.010
b 0.180 0.300 0.007 0.012
D 2.950 3.050 0.116 0.120
D2 1.300 1.750 0.051 0.069
E 2.950 3.050 0.116 0.120
E2 1.300 1.750 0.051 0.069
e 0.500 0.020
L 0.350 0.450 0.014 0.018

W-Type 16L QFN 3x3 Package

Richtek Technology Corporation

5F, No. 20, Taiyuen Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789

Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.

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