®

RTQ2965-QA

60VIN, 5A, Asynchronous Step-Down Converter with Low

Quiescent Current
General Description Features
The RTQ2965 is a 5A, high-efficiency, peak current mode  AEC-Q100 Grade 1 Qualified
control asynchronous step-down converter which is  FMEA Compliant Pinout
optimized for automotive applications. The device operates  Wide Input Voltage Range
with input voltages from 4V to 60V and is protected from  4.5V to 60V

load dump transients up to 65V, eases input surge  4V to 60V (Soft-start is finished)

protection design. The device can program the output  Wide Output Voltage Range : 0.8V to VIN
voltage between 0.8V to VIN. The low quiescent current  0.8V ±1% Reference Accuracy
design with the integrated low R DS(ON) of high-side  Peak Current Mode Control
MOSFET achieves high efficiency over the wide load range.  Integrated 70mΩ Ω High-Side MOSFET
The peak current mode control with simple external  Low Quiescent Current : 100μ μA
compensation allows the use of small inductors and  Low Shutdown Current : 2.25μ μA
results in fast transient response and good loop stability.  Adjustable Switching : 100kHz to 2.5MHz
 Synchronizable Switching : 300kHz to 2.2MHz
The wide switching frequency of 100kHz to 2500kHz allows
 Power Saving Mode (PSM) at Light Load
for efficiency and size optimization when selecting the
 Built-In Spread-Spectrum Frequency Modulation
output filter components. The ultra-low minimum on-time
 Low Dropout at Light Loads with Integrated Boot
enables constant-frequency operation even at very high
Recharge FET
step-down ratios. For switching noise sensitive
 Externally Adjustable Soft-Start by Part Number
applications, it can be externally synchronized from
Option
300kHz to 2200kHz. The build-in spread-spectrum
 Power Good Indication by Part Number Option
frequency modulation further helping systems designers
 Enable Control
with better EMC management.
 Adjustable UVLO Voltage and Hysteresis
The RTQ2965 provides complete protection functions such  Adjacent Pin-Short Protection
as input under-voltage lockout, output under-voltage  Built-In UVLO, UVP, OVP, OCP, OTP
protection, output over-voltage protection, over-current
protection, and thermal shutdown. Cycle-by-cycle current Applications
limit provides protection against shorted outputs, and soft-  Automotive, Communications and Industrial 12V, 24V
start eliminates input current surge during start-up. The and 48V Power Systems
RTQ2965 is available in WDFN-10L 4x4 and SOP-8  Industrial Automation and Motor Control
(Exposed pad) packages.  Vehicle Accessories : GPS, Entertainment

Simplified Application Circuit

RTQ2965GQW CBOOT RTQ2965GSP CBOOT
VIN VIN VIN VIN
BOOT L1 BOOT L1
CIN SW VOUT CIN SW VOUT

D1 RFB1 COUT D1 RFB1 COUT

Enable Signal EN
Enable Signal EN
PGOOD PGOOD FB FB
RRT
RFB2 RFB2
RT/SYNC CCOMP1 RCOMP
CCOMP1 RCOMP COMP
SS/TR
COMP CSS CCOMP2 RRT
CCOMP2 RT/SYNC

GND PAD GND PAD

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RTQ2965-QA
Ordering Information Pin Configuration
RTQ2965 -QA
(TOP VIEW)
Grade
QA : AEC-Q100 Qualified and BOOT 8 SW
Screened by High Temperature
VIN 2 7 GND
PAD
Pin 1 Orientation*** EN 3 6 COMP
9
(2) : Quadrant 2, Follow EIA-481-D
RT/SYNC 4 5 FB
(WDFN-10L 4x4 only)

Package Type SOP-8 (Exposed pad)

SP : SOP-8 (Exposed Pad-Option 2)
QW : WDFN-10L 4x4 (W-Type) BOOT 1 10 PGOOD
Lead Plating System VIN 2 9 SW
G : Green (Halogen Free and Pb Free) EN 3 PAD 8 GND
SS/TR 4 7 COMP
Note : RT/SYNC 5 11 6 FB
***Empty means Pin1 orientation is Quadrant 1
Richtek products are : WDFN-10L 4x4
 RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
 Suitable for use in SnPb or Pb-free soldering processes.

Marking Information
RTQ2965GSP-QA
RTQ2965GSP-QA : Product Number
RTQ2965 YMDNN : Date Code
GSP-QAYMDNN

RTQ2965GQW-QA
8U= : Product Code

8U=YM YMDNN : Date Code

DNN

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 RTQ2965-QA
Functional Pin Description
Pin No.
SOP-8 Pin Name Pin Function
WDFN-10L 4x4
(Exposed Pad)
Bootstrap capacitor connection node to supply the high-side
1 1 BOOT gate driver. Connect a 0.1F ceramic capacitor between this
pin and the SW pin.
Power input. The input voltage range is from 4V to 60V.
Connect a suitable input capacitor between this pin and GND,
2 2 VIN
usually four 2.2F or larger ceramic capacitors with two
typical capacitance 4.7F.
Enable control pin with internal pull-up current source. Float
3 3 EN or provide a logic-high (  1.2V) enables the converter; a
logic-low forces the device into shutdown mode.
Soft-start and tracking control input. Connect a capacitor from
SS to GND to set the soft-start period. ”Do Not” leave this pin
-- 4 SS/TR floating to avoid inrush current during power up. It also can
be used to track and sequence because the SS/TR pin
voltage can override the internal reference voltage.
Frequency setting and external synchronous signal input.
Connect a resistor from this pin to GND to set the switching
4 5 RT/SYNC
frequency. Tie to a clock source for synchronization to an
external frequency.
Output voltage sense. Sense the output voltage at the FB pin
5 6 FB through a resistive divider. The feedback reference voltage is
0.8V typically.
Compensation node. Connect external compensation
6 7 COMP
elements to this pin to stabilize the control loop.
Ground. Provide the ground return path for the control
7 8 GND
circuitry.
Switch node. SW is the switching node that supplies power
8 9 SW to the output. Connect the output LC filter from SW to the
output load.
Open-drain power-good indication output. Once being
-- 10 PGOOD started-up, PGOOD will be pulled low to GND if any internal
protection is triggered.
Exposed pad. The exposed pad is internally unconnected
9 (Exposed Pad) 11 (Exposed Pad) PAD and must be soldered to a large PCB copper area for
maximum power dissipation.

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RTQ2965-QA
Functional Block Diagram
WDFN-10L 4x4 package

PGOOD EN VIN

Shutdown
UV Thermal
UVLO
+ Shutdown
- IEN IEN_Hys
Voltage
Reference OV
+ Shutdown
Logic Shutdown
+
- Logic
Enable -
- PGOOD Threshold Enable
Comparator VCC Regulator
+

Current
Pulse-Skip Sense
ISS
Minimum Clamp BOOT
BOOT
PWM
FB - UVLO
Comparator
0.8V + EA -
Logic High-Side
SS/TR + + MOSFET

SW
Shutdown
Slope
+

Compensation
OC
Clamp
COMP
Frequency
Foldback BOOT
recharge
MOSFET
GND
Oscillator

RT/SYNC

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SOP-8 (Exposed pad) package

EN VIN

Shutdown
Thermal
UVLO
Shutdown
UV
+ IEN IEN_Hys
-
Voltage Logic
OV Shutdown Shutdown
Reference + +
Logic
- Enable -
Threshold Enable
Comparator VCC Regulator

Current
Pulse-Skip Sense
Minimum Clamp BOOT
BOOT
PWM
FB - UVLO
Comparator
0.8V + EA -
Logic High-Side
SS + + MOSFET

SW
Shutdown
Slope
+

Compensation
OC
Clamp
COMP
Frequency
Foldback BOOT
recharge
MOSFET
GND
Oscillator

RT/SYNC

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RTQ2965-QA
Operation
Control Loop can also be synchronized with an external clock ranging
The RTQ2965 is a high efficiency asynchronous step-down from 300kHz to 2.2MHz by RT/SYNC pin. The switching
converter utilizes the peak current mode control. An frequency of synchronization should be equal to or higher
internal oscillator initiates the turn-on of the high-side than the frequency set by the RT resistor. For example, if
MOSFET. At the beginning of each clock cycle, the internal the switching frequency of synchronization is 500kHz or
high-side MOSFET turns on, allowing current to ramp-up higher, the RRT/SYNC should be selected for 500kHz.
in the inductor. The inductor current is internally monitored The RTQ2965 implements a frequency foldback function
during each switching cycle. The output voltage is sensed to protect the device at over-load or short-circuited
on the FB pin via the resistor divider, R1 and R2, and condition, especially higher switching frequencies and input
compared with the internal reference voltage (VREF) to voltages. The switching frequency is divided by 1, 2, 4,
generate a compensation signal (VCOMP) on the COMP and 8 as the FB pin voltage falls from 0.8 V to 0 V for
pin. A control signal derived from the inductor current is switching frequency control by RT resistor setting mode
compared to the voltage at the COMP pin, derived from and the synchronization mode both. The frequency foldback
the feedback voltage. When the inductor current reaches function increases the switching cycle period and provides
its threshold, the high-side MOSFET is turned off and more time for the inductor current to ramp down.
inductor current ramps down. While the high-side MOSFET
is off, the inductor current is supplied through the external Maximum Duty Cycle Operation
low-side diode, freewheel diode, connected between the The RTQ2965 is designed to operate in dropout at the
SW pin and GND. This cycle repeats at the next clock high duty cycle approaching 100%. If the operational duty
cycle. In this way, duty-cycle and output voltage are cycle is large and the required off-time becomes smaller
controlled by regulating inductor current. than minimum off-time, the RTQ2965 starts to enable skip
off-time function and keeps high-side MOSFET on
Light Load Operation
continuously.
The RTQ2965 operates in power saving mode (PSM) at
The RTQ2965 implements skip off-time function to achieve
light load to improve light load efficiency. IC starts to switch
high duty approaching 100% and the maximum output
when VFB is lower than PSM threshold ( VREF x 1.005,
voltage is near the minimum input supply voltage of the
typically) and stops switching when VFB is high enough.
application for input voltage momentarily falls down to the
During PSM, the peak inductor current (I L_PEAK) is normal output voltage requirement. The input voltage at
controlled by the minimum on-time of high-side MOSFET which the devices enter dropout changes depending on
to ensure the low output voltage ripple. During non- the input voltage, output voltage, switching frequency, load
switching period, most of the internal circuit is shut down, current, and the efficiency of the design.
and the supply current drops to quiescent current (100μA,
For normal operation, the minimum input voltage can be
typically) to reduce the quiescent power consumption.
calculated from below equation :
With lower output loading, the non-switching period is
VOUT + IOUT_MAX  RL + VD
longer, so the effective switching frequency becomes lower VIN_MIN =
1  fSW  tOFF_MIN
to reduce the switching loss and switch driving loss.
+ IOUT_MAX  RDS(ON)_H  VD
Switching Frequency Selection and Synchronization
where VIN_MIN is the minimum normal operating input
The RTQ2965 provides an RT/SYNC pin for switching voltage; RDS(ON)_H is the on-resistance of the high-side
frequency selection. The switching frequency can be set MOSFET; VD is the forward conduction voltage of the
by using external resistor RRT/SYNC and the switching freewheel diode; RL is the DC resistance of inductor.
frequency range is from 100kHz to 2.5MHz. The RTQ2965

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BOOT UVLO by selecting the value of the external soft-start capacitor
The BOOT UVLO circuit is implemented to ensure a CSS/TR connected from the SS/TR pin to ground or
sufficient voltage of BOOT capacitor for turning on the high- controlled by external ramp voltage to SS/TR pin. During
side MOSFET at any conditions. The BOOT UVLO usually the start-up sequence, the soft-start capacitor is charged
actives at extremely high conversion ratio or the higher by an internal current source ISS (1.7μA, typically) to
VOUT application operates at very light load. With such generate a soft-start ramp voltage as a reference voltage
conditions when the BOOT to SW voltage falls below to the PWM comparator. The high-side MOSFET will start
VBOOT_UVLO_L (2.7V, typically), the device turns on the switching if the voltage difference between SS/TR pin and
internal BOOT recharge FET (150ns, typically) to charge FB pin is equal to 42mV ( i.e. VSS/TR − VFB = 42mV,
the BOOT capacitor. The BOOT UVLO is sustained until typically) during power-up period. If the output is pre-
the BOOT to SW voltage is higher than VBOOT_UVLO_H biased to a certain voltage during start-up for some reason,
(2.8V, typically). the device will not start switching until the voltage difference
between SS/TR pin and FB pin is equal to 42mV
Enable Control (typically). Only when this ramp voltage is higher than the
The RTQ2965 provides an EN pin, as an external chip feedback voltage VFB, the switching will be resumed. The
enable control, to enable or disable the device. If VEN is FB voltage will track the SS/TR pin ramp voltage with a
held below the enable threshold voltage, switching is SS/TR to FB offset voltage (42mV, typically) during soft-
inhibited even if the VIN voltage is above VIN under-voltage start interval. The output voltage can then ramp up smoothly
lockout threshold (VUVLOH). If VEN is held below 0.4V, the to its targeted regulation voltage, and the converter can
converter will enter into shutdown mode, that is, the have a monotonic smooth start-up. For soft-start control,
converter is disabled. During shutdown mode, the supply the SS pin should never be left unconnected. After the FB
current can be reduced to ISHDN (2.25μA, typically). If the pin voltage rises above 94% of VREF (typically), the
EN voltage rises above the enable threshold voltage while PGOOD pin will be in high impedance and the VPGOOD will
the VIN voltage is higher than VUVLOH, the device will be be held high. The typical start-up waveform shown in
turned on, that is, switching being enabled and soft-start Figure 1 indicates the sequence and timing between the
sequence being initiated. The EN pin has an internal pull- output voltage and related voltage.
up current source IEN (1.2μA, typically) that enables
VIN = 4.5V to 60V
operation of the RTQ2965 when the EN pin floats. The EN VIN

pin can be used to adjust the under-voltage lockout (UVLO)

threshold and hysteresis by using two external resistors. EN

The RTQ2965 implements additional hysteresis current 540µs tSS

source IEN_Hys (3.4μA, typically) to adjust the UVLO. The SS

42mV
94% x VOUT
IEN_Hys is sourced out of the EN pin when VEN is larger 90% x VOUT
10% x
than enable threshold voltage. When the VEN falls below VOUT
VOUT
enable threshold voltage, the IEN_Hys will be stopped
sourcing out of the EN pin. PGOOD

Soft-Start and Tracking Control

The soft-start function is used to prevent large inrush
currents while the converter is being powered up. The
Figure 1 Start-Up Sequence for RTQ2965GQW
RTQ2965GSP provides internal soft-start and the
RTQ2965GQW provides external soft-start function for
inrush currents control. The RTQ2965GQW provides an
SS/TR pin so that the soft-start time can be programmed

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Power Good Indication Spread-Spectrum Operation
The RTQ2965GQW features an open-drain power-good Due to the periodicity of the switching signals, the energy
output (PGOOD) to monitor the output voltage status. The concentrates in one particular frequency and also in its
output delay of comparator prevents false flag operation odds harmonics. These levels or energy is radiated and
for short excursions in the output voltage, such as during therefore this is where a potential EMI issue arises. The
line and load transients. Pull-up PGOOD with a resistor RTQ2965 have built-in spread-spectrum function and it
to an external voltage source and it is recommended to can be enable to overcome EMI issue. The switching
use pull-up resistance between the values of 1 and 10kΩ frequency varies by +6% relative to the switching frequency
to reduce the switching noise coupling to PGOOD pin. setting. By varying the frequency +6% only in the positive
The PGOOD assertion requires input voltage above 2V. direction, the RTQ2965 still guarantees that the 2.1MHz
The power-good function is controlled by a comparator switching frequency setting does not drop into the AM
connected to the feedback signal VFB. If VFB rises above band limit of 1.8MHz.
the power-good high threshold (VTH_PGLH1) (94% of the
reference voltage, typically), the PGOOD pin will be in Input Under-Voltage Lockout
high impedance and VPGOOD will be held high after a certain In addition to the EN pin, the RTQ2965 also provides enable
delay elapsed. When VFB falls below power-good low control through the VIN pin. If VEN rises above VTH_EN first,
threshold (VTH_PGHL2) (92% of the reference voltage, the switching will be inhibited until the VIN voltage rises
typically) or exceeds VTH_PGHL1 (109% of the reference above VUVLOH. It is to ensure that the internal regulator is
voltage, typically), the PGOOD pin will be pulled low. For ready so that operation with not-fully-enhanced internal
VFB higher than VTH_PGHL1, VPGOOD can be pulled high high-side MOSFET can be prevented. After the device is
again if VFB drops back by a power-good high threshold powered up, if the input voltage VIN goes below the UVLO
(VTH_PGLH2) (106% of the reference voltage, typically). falling threshold voltage (VUVLOL), this switching will be
Once being started-up, if any internal protection is inhibited; if VIN rises above the UVLO rising threshold
triggered, PGOOD will be pulled low to GND. The internal (VUVLOH), the device will resume switching. Note that VIN
open-drain pull-down device (45Ω, typically) will pull the = 4V is only design for cold crank requirement, normal
PGOOD pin low. The power good indication profile is shown input voltage should be larger than the VUVLOH.
in Figure 2.
High-Side MOSFET Peak Current Limit Protection

VTH_PGHL1 The RTQ2965 includes a cycle-by-cycle high-side

VTH_PGLH2 MOSFET peak current-limit protection against the
condition that the inductor current increasing abnormally,
VTH_PGLH1 even over the inductor saturation current rating. The
VTH_PGHL2 inductor current through the high-side MOSFET will be
measured after a certain amount of delay when the high-
VFB
side MOSFET being turned on. If an over-current condition
occurs, the converter will immediately turn off the high-
VPGOOD side MOSFET to prevent the inductor current exceeding
Figure 2. The Logic of PGOOD for RTQ2965GQW the high-side MOSFET peak current limit (ILIM).

Output Under-Voltage Protection

The RTQ2965 includes output under-voltage protection
(UVP) against over-load or short-circuited condition by
constantly monitoring the feedback voltage VFB. If VFB
drops below the under-voltage protection trip threshold

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 RTQ2965-QA
(50% of the internal reference voltage, typically), the UV VOUT Short Removed
2V/DIV Short Applied
comparator will go high to turn off the internal high-side
switch. If the output under-voltage condition continues for
a period of time, the RTQ2965 enters output under-voltage VPGOOD
protection with hiccup mode and discharges the CSS/TR 4V/DIV

by an internal discharging current source ISS_DIS (0.5μA, VSS

typically). During hiccup mode, the device remains 4V/DIV
shutdown. After the SS pin voltage is discharged to less
than 54mV (typically), the RTQ2965 attempts to re-start
up again, and the internal charging current source ISS I SW
(1.7μA, typically) gradually increases the voltage on CSS/ 3A/DIV
TR. The high-side MOSFET will start switching when
Figure 3. Short-Circuit Protection and Recovery
voltage difference between SS pin and FB pin is equal to
42mV ( i.e. VSS − VFB = 42mV, typically). If the output
Output Over-Voltage Protection
under-voltage condition is not removed, the high-side
The RTQ2965 includes an output over-voltage protection
MOSFET stops switching when the voltage difference
(OVP) circuit to limit output voltage. Since the VFB is lower
between SS pin and FB pin is 1.2V ( i.e. VSS − VFB =
than the reference voltage (VREF) at over-load or short-
1.2V, typically) and then the ISS_DIS discharging current
circuited condition, the COMP voltage will be high to
source begins to discharge CSS/TR. Upon completion of
demand maximum output current. Once the over-load or
the soft-start sequence, if the output under-voltage
short-circuited condition is removed, the COMP voltage
condition is removed, the converter will resume normal
resumes to the normal voltage to regulate the output
operation; otherwise, such cycle for auto-recovery will be
voltage. The output voltage leads to the possibility of an
repeated until the output under-voltage condition is cleared.
output overshoot if the load transient is faster than the
Hiccup mode allows the circuit to operate safely with low
COMP voltage transient response, especially for small
input current and power dissipation, and then resume
output capacitance. If the VFB goes above the 109% of
normal operation as soon as the over-load or short-circuit
the reference voltage, the high-side MOSFET will be forced
condition is removed. A short circuit protection and
off to limit the output voltage. When the VFB drops lower
recovery profile is shown in Figure 3.
than the 106% of the reference voltage, the high-side
Since the CSS/TR will be discharged to 54mV when the MOSFET will be resumed.
RTQ2965 enters output under-voltage protection, the first
discharging time (tSS_DIS1) can be calculated as below : Pin-Short Protection
V  0.054 The RTQ2965 provides pin-short protection for neighbor
tSS_DIS1 = CSS  SS
ISS_DIS pins. The internal protection fuse will be burned out to
prevent IC smoke, fire and spark when BOOT pin is
The equation below assumes that the VFB will be 0 at
shorted to VIN pin. The EN pin with high-voltage rating
short-circuited condition and it can be used to calculate
can avoid IC burn-out when EN pin is shorted to VIN pin.
the CSS/TR discharging time (tSS_DIS2) and charging time
The hiccup mode protection will be triggered to avoid IC
(tSS_CH) during hiccup mode.
burn-out when SW pin is shorted to ground during internal
1.146
tSS_DIS2 = CSS  high-side MOSFET turns on.
ISS_DIS
1.146
tSS_CH = CSS 
ISS_CH

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RTQ2965-QA
Over-Temperature Protection
The RTQ2965 includes an over-temperature protection
(OTP) circuitry to prevent overheating due to excessive
power dissipation. The OTP will shut down switching
operation when junction temperature exceeds a thermal
shutdown threshold TSD. Once the junction temperature
cools down by a thermal shutdown hysteresis (ΔTSD), the
IC will resume normal operation with a complete soft-start.

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Absolute Maximum Ratings (Note 1)
 Supply Voltage, VIN ------------------------------------------------------------------------------------------------------ −0.3V to 65V
 Enable Voltage, EN ------------------------------------------------------------------------------------------------------- −0.3V to 65V
 Switch Voltage, SW ------------------------------------------------------------------------------------------------------ −0.6V to 65V
SW (t ≤ 100ns) ------------------------------------------------------------------------------------------------------------- −5V to 70V
SW (t ≤ 5ns) ---------------------------------------------------------------------------------------------------------------- −7V to 70V
 Power Good Voltage, PGOOD ----------------------------------------------------------------------------------------- −0.3V to 65V
 BOOT to SW (BOOT−SW) ---------------------------------------------------------------------------------------------- −0.3V to 6V
 All Other Pins -------------------------------------------------------------------------------------------------------------- −0.3V to 6V
 Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------- 260°C
 Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C
 Storage Temperature Range -------------------------------------------------------------------------------------------- −65°C to 150°C

ESD Ratings (Note 2)

 ESD Susceptibility
HBM (Human Body Model) ---------------------------------------------------------------------------------------------- 2kV

Recommended Operating Conditions (Note 3)

 Supply Input Voltage, VIN ----------------------------------------------------------------------------------------------- 4V to 60V
 Output Voltage ------------------------------------------------------------------------------------------------------------- 0.8V to VIN
 Junction Temperature Range -------------------------------------------------------------------------------------------- −40°C to 150°C

Thermal Information (Note 4 and Note 5)

SOP-8
Thermal Parameter WDFN-10L 4x4 Unit
(Exposed pad)
Junction-to-ambient thermal resistance (JEDEC
JA 31.7 30.4 C/W
standard)
JC(Top) Junction-to-case (top) thermal resistance 46.4 73.9 C/W
JC(Bottom) Junction-to-case (bottom) thermal resistance 4.1 3.4 C/W
Junction-to-ambient thermal resistance (specific
JA(EVB) 30.4 30 C/W
EVB)
JC(Top) Junction-to-top characterization parameter 3.4 5 C/W
JB Junction-to-board characterization parameter 13 13.2 C/W

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RTQ2965-QA
Electrical Characteristics
(VIN = 12V, TA = TJ = −40°C to 125°C, unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Supply Voltage
Input Operating Voltage VIN After soft-start is finished 4 -- 60 V

VIN Under-Voltage Lockout VUVLOH VIN rising 4.1 4.3 4.5

V
Threshold VUVLOL VIN falling 3.8 3.9 4
Shutdown Current ISHDN VEN = 0V -- 2.25 5 A
VEN = 2V, VFB = 0.83V, not
Quiescent Current IQ -- 100 135 A
switching
Enable Voltage

Enable Threshold Voltage VTH_EN 1.1 1.2 1.3 V

Enable to COMP Active VIN = 12V, TA = 25C -- 540 -- s

VTH_EN + 50mV -- 4.6 -- A
Pull-Up Current IEN
VTH_EN  50mV 0.58 1.2 1.8 A
Hysteresis Current IEN_Hys 2.2 3.4 4.5 A
Reference Voltage
Reference Voltage VREF 0.792 0.8 0.808 V
Internal MOSFET
High-Side Switch On-
RDS(ON)_H VIN = 12V, VBOOT  VSW = 5V -- 70 140 m
Resistance
Error Amplifier
Input Current -- 50 -- nA
Normal operation
2A < ICOMP < 2A -- 440 --
Error Amplifier Trans- VCOMP = 1V
gm A/V
Conductance During SS,
2A < ICOMP < 2A -- 77 --
VCOMP = 1V, VFB = 0.4V
Error Amplifier DC Gain VFB = 0.8V -- 10000 -- V/V
Error Amplifier Bandwidth -- 2500 -- kHz
Source/Sink Current VCOMP = 1V, 100mV overdrive -- 30 -- A
COMP to Current Sense
gm_cs -- 17 -- A/V
Trans-Conductance
Current Limit
f SW = 500kHz,
Current Limit ILIM 6.375 7.5 8.625 A
VOUT = 5V

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 RTQ2965-QA
Parameter Symbol Test Conditions Min Typ Max Unit
On-Time Timer Control

Minimum On-Time tON_MIN IOUT = 1A -- 120 135 ns

Timing Resistor and External Clock

Switching Frequency 1 f SW1 RRT/SYNC = 1M 90 105 120 kHz

Switching Frequency 2 f SW2 RRT/SYNC = 200k 450 500 550 kHz

Switching Frequency 3 f SW3 RRT/SYNC = 37.4k 2200 2450 2700 kHz

SYNC Frequency Range External clock 0.3 -- 2.2 MHz

Minimum Sync Pulse Width -- 20 -- ns

VIH_SYNC -- 1.55 2
SYNC Threshold Voltage V
VIL_SYNC 0.5 1.2 --

RT/SYNC Falling Edge to SW

-- 70 -- ns
Rising Edge Delay
Soft-Start and Tracking
Internal Charge Current ISS VSS/TR = 0.4V, RTQ2965GQW -- 1.7 -- A
SS/TR to FB Offset VSS/TR = 0.4V, RTQ2965GQW -- 42 -- mV
SS/TR-to-Reference Crossover 98% nominal, RTQ2965GQW -- 1.16 -- V
SS/TR Discharge Voltage VFB = 0V, RTQ2965GQW -- 54 -- mV
Internal Soft-Start Time
Soft-Start Period 10% to 90%, RTQ2965GSP 1.4 2 2.6 ms
Power Good
VFB rising, % of VREF, PGOOD
VTH_PGLH1 90 94 98
from low to high, RTQ2965GQW
VFB rising, % of VREF, PGOOD
VTH_PGHL1 105 109 113
from high to low, RTQ2965GQW
Power Good Threshold %
VFB falling, % of VREF, PGOOD
VTH_PGHL2 88 92 96
from high to low, RTQ2965GQW
VFB falling, % of VREF, PGOOD
VTH_PGLH2 102 106 110
from low to high, RTQ2965GQW
Power Good Hysteresis VFB falling, RTQ2965GQW -- 2 -- %
VPGOOD = 5.5V, TA = 25°C,
Power Good Leakage Current ILK_PGOOD -- 10 500 nA
RTQ2965GQW
IPGOOD = 3mA, VFB < 0.79V,
On-Resistance -- 45 -- 
RTQ2965GQW
VPGOOOD < 0.5V, IPGOOD = 100A,
Minimum VIN for defined output -- 0.9 2 V
RTQ2965GQW

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Parameter Symbol Test Conditions Min Typ Max Unit
Spread Spectrum

Spread-Spectrum Range SSP -- +6 -- %

Thermal Shutdown
Thermal Shutdown TSD -- 175 -- °C
Thermal Shutdown
TSD -- 15 -- °C
Hysteresis
Output Under-Voltage Protection
UVP Trip Threshold VUVP UVP detect -- 0.4 -- V

Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Note 2. Devices are ESD sensitive. Handling precaution is recommended.
Note 3. The device is not guaranteed to function outside its operating conditions.
Note 4. For more information about thermal parameter, see the Application and Definition of Thermal Resistances report,
AN061.
Note 5. θJA(EVB), ψJC(Top) and ψJB are measured on a high effective-thermal-conductivity four-layer test board which is in size of
70mm x 50mm; furthermore, outer layers with 2 oz. Cu and inner layers with 1 oz. Cu. Thermal resistance/parameter
values may vary depending on the PCB material, layout, and test environmental conditions.

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Typical Application Circuit
300kHz, 3.3V, 5A Step-Down Converter

5V

DBOOT(*)

CBOOT
RTQ2965GSP 0.1µF
VIN 2 1 L1
VIN BOOT
4.5V to 60V 7.8µH
C1 C2 C3 C4 8 VOUT
C5 SW
2.2µF 2.2µF 2.2µF 2.2µF 0.1µF 3.3V/5A
D1 R1
3 SS5P6 C8 C9 C10
Enable Signal EN 31.6k
5 47µF 47µF 47µF
FB
C6 R3 R2
10nF 5.36k 10k
6
COMP
C7 RRT
220pF
4 332k
RT/SYNC
GND PAD
7 9 (Exposed pad)
fSW = 300kHz
L1 = 744325780
C8/C9/C10 = GRT32EC81C476KE13L
C1/C2/C3/C4 = HMK316AC7225KL-TE

400kHz, 5V, 5A Step-Down Converter

5V

DBOOT(*)

CBOOT
RTQ2965GSP 0.1µF
VIN 2 1 L1
VIN BOOT
8V to 60V 6.8µH
C1 C2 C3 C4 C5 8 VOUT
SW
2.2µF 2.2µF 2.2µF 2.2µF 0.1µF 5V/5A
D1 R1
3 SS5P6 C8 C9 C10
Enable Signal EN 52.3k
5 47µF 47µF 47µF
FB
C6 R3 R2
8.2nF 10.5k 10k
6
COMP
C7 RRT
100pF 249k
4
RT/SYNC

GND PAD
fSW = 400kHz 7 9 (Exposed pad)
L1 = Cyntec-VCHA075D-6R8MS6
C8/C9/C10 = GRT32EC81C476KE13L
C1/C2/C3/C4 = HMK316AC7225KL-TE

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400kHz, 12V, 5A Step-Down Converter

5V

DBOOT(*)

CBOOT
RTQ2965GSP 0.1µF
VIN 2 1 L1
VIN BOOT
14V to 60V 15µH
C1 C3 C4 C5 8 VOUT
C2 SW
2.2µF 2.2µF 2.2µF 2.2µF 0.1µF 12V/5A
D1 R1
3 SS5P6 C8 C9 C10 C11 C12 C13
Enable Signal EN 140k
5 10µF 10µF 10µF 10µF 10µF 10µF
FB
R2
C6 R3 10k
8.2nF 8.87k
6
COMP
RRT
C7
100pF 4 249k
RT/SYNC

GND PAD
7 9 (Exposed pad)
fSW = 400kHz
L1 = Cyntec-VCHA105D-150MS6
C8/C9/C10/C11/C12/C13 = UMK325AB7106KM
C1/C2/C3/C4 = HMK316AC7225KL-TE

300kHz, 3.3V, 5A Step-Down Converter

5V

DBOOT(*)

CBOOT
RTQ2965GQW 0.1µF
VIN 2 1 L1
VIN BOOT
4.5V to 60V 7.8µH
C1 C3 C4 9 VOUT
C2 C5 SW
2.2µF 2.2µF 2.2µF 2.2µF 0.1µF 3.3V/5A
D1 R1
3 SS5P6 C8 C9 C10
Enable Signal EN 31.6k
10 6 47µF 47µF 47µF
PWRGD PGOOD FB
RRT R2
332k 5 10k
RT/SYNC
C6 R3
7 SS/TR 4
COMP CSS
10nF C7 5.36k 0.01µF

220pF GND PAD

8 11 (Exposed pad)
fSW = 300kHz
L1 =744325780
C8/C9/C10 = GRT32EC81C476KE13L
C1/C2/C3/C4 = HMK316AC7225KL-TE

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 RTQ2965-QA
400kHz, 5V, 5A Step-Down Converter

5V

DBOOT(*)

CBOOT
RTQ2965GQW 0.1µF
VIN 2 1 L1
VIN BOOT
8V to 60V 6.8µH
C1 C2 C3 C4 C5 9 VOUT
SW
2.2µF 2.2µF 2.2µF 2.2µF 0.1µF 5V/5A
D1 R1
3 SS5P6 C8 C9 C10
Enable Signal EN 52.3k
10 6 47µF 47µF 47µF
PWRGD PGOOD FB
RRT R2
249k 5 10k
RT/SYNC
C6 R3
7 SS/TR 4
COMP CSS
8.2nF C7 10.5k 0.01µF

100pF GND PAD

8 11 (Exposed pad)
fSW = 400kHz
L1 = Cyntec-VCHA075D-6R8MS6
C8/C9/C10 = GRT32EC81C476KE13L
C1/C2/C3/C4 = HMK316AC7225KL-TE

400kHz, 12V, 5A Step-Down Converter

5V

DBOOT(*)

CBOOT
RTQ2965GQW 0.1µF
VIN 2 1 L1
VIN BOOT
14V to 60V 15µH
C1 C3 C4 C5 9 VOUT
C2 SW
2.2µF 2.2µF 2.2µF 2.2µF 0.1µF 12V/5A
D1 R1
3 SS5P6 C8 C9 C10 C11 C12 C13
Enable Signal EN 140k
10 6 10µF 10µF 10µF 10µF 10µF 10µF
PWRGD PGOOD FB
RRT R2
249k 5 10k
RT/SYNC
C6 R3
7 SS/TR 4
COMP CSS
8.2nF C7 8.87k 0.01µF

100pF GND PAD

8 11 (Exposed pad)
fSW = 400kHz
L1 = Cyntec-VCHA105D-150MS6
C8/C9/C10/C11/C12/C13 = UMK325AB7106KM
C1/C2/C3/C4 = HMK316AC7225KL-TE

* : While the input voltage is below 5.5V or duty ratio is higher than 65%, an external bootstrap diode must be added
between an external 5V voltage supply and the BOOT pin to enhance the drive capability for the high-side MOSFET.
Refer to the Application Information for more details on the external bootstrap diode design.

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Typical Operating Characteristics
Efficiency vs. Output Current Efficiency vs. Output Current
100 100
90 90
VIN = 14V
80 Freq = 100k 80
VIN = 24V
Freq = 400k 70 VIN = 36V
70
Freq = 1M

Efficiency (%)
Efficiency (%)

VIN = 48V
60 Freq = 2.5M 60 VIN = 60V
50 50

40 40
VIN = 12V, VOUT = 5V
30 fSW = 2.5MHz, L= VCMT063T-1R5MN5, 1.5μH 30

20 fSW = 1MHz, L= VCHA075D-3R3MS6, 3.3μH 20

fSW = 400kHz, L= VCHA075D-6R8MS6, 6.8μH VOUT = 12V, fSW = 400kHz,
10 10
fSW = 100kHz, L= 74435573300, 33μH L = VCHA105D-150MS6, 15μH
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
Output Current (A) Output Current (A)

Efficiency vs. Output Current Efficiency vs. Output Current

100 100
90 90
80 80
VIN = 8V
70 VIN = 12V 70 VIN = 4.5V
Efficiency (%)

Efficiency (%)

60 VIN = 13.5V VIN = 8V

60
VIN = 18V VIN = 12V
50 VIN = 24V 50 VIN = 13.5V
VIN = 36V VIN = 18V
40 40
VIN = 48V VIN = 24V
30 VIN = 60V 30 VIN = 36V
VIN = 48V
20 20 VIN = 60V
VOUT = 5V, fSW = 400kHz VOUT = 3.3V, fSW = 300kHz
10 10
L = VCHA075D-6R8MS6, 6.8μH L = 744325780, 7.8μH
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
Output Current (A) Output Current (A)

Output Voltage vs. Output Current Output Voltage vs. Input Voltage
5.15 5.06

5.05
5.10
5.04
Output Voltage (V)
Output Voltage (V)

5.05
5.03

5.00 5.02

5.01
4.95
5.00
4.90
4.99
VIN = 12V, VOUT = 5V IOUT = 5A, VOUT = 5V
4.85 4.98
0 1 2 3 4 5 5 10 15 20 25 30 35 40 45 50 55 60
Output Current (A) Input Voltage (V)

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Current Limit vs. Input Voltage Switching Frequency vs. Temperature

9.0 120

Switching Frequency (kHz)1

8.5 115
Current Limit (A)

8.0 110

7.5 105

7.0 100

6.5 95
VIN = 12V, VOUT = 5V
VOUT = 5V, fSW = 500kHz, L = 5.6μH IOUT = 2.5A, RRT/SYNC = 1MΩ
6.0 90
6 12 18 24 30 36 42 48 54 60 -50 -25 0 25 50 75 100 125
Input Voltage (V) Temperature (°C)

Switching Frequency vs. Temperature Switching Frequency vs. Temperature

550 2700
Switching Frequency (kHz)1

Switching Frequency (kHz)1

530 2600

510 2500

490 2400

470 2300
VIN = 12V, VOUT = 5V VIN = 12V, VOUT = 5V
IOUT = 2.5A, RRT/SYNC = 200kΩ IOUT = 2.5A, RRT/SYNC = 37.4kΩ
450 2200
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Temperature (°C) Temperature (°C)

Quiescent Current vs. Temperature Shutdown Current vs. Temperature

135 5.0
4.5
125
Shutdown Current (μA)1
Quiescent Current (μA)

4.0
115 3.5
3.0
105
2.5
95
2.0

85 1.5
1.0
75
0.5
VIN = 12V VIN = 12V
65 0.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Temperature (°C) Temperature (°C)

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UVLO Threshold vs. Temperature Enable Threshold vs. Temperature

5.0 1.30

4.6 1.26

Enable Threshold (V)

UVLO Threshold (V)

Rising

4.2 1.22

3.8 Falling 1.18

3.4 1.14

VOUT = 1V VOUT = 1V
3.0 1.10
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Temperature (°C) Temperature (°C)

Output Voltage vs. Temperature Current Limit vs. Temperature

5.10 9.0
High-Side MOSFET
8.5
5.05
8.0
Output Voltage (V)

Current Limit (A)

5.00
7.5

4.95 7.0

6.5
4.90
6.0
4.85
5.5 VIN = 12V, VOUT = 5V
VIN = 12V, VOUT = 5V, IOUT = 2.5A fSW = 500kHz, L= 5.6μH
4.80 5.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Temperature (°C) Temperature (°C)

Load Transient Response Output Ripple Voltage

VOUT
IOUT (10mV/Div)
(1A/Div)
VIN = 12V, VOUT = 5V
IOUT = 2.5 to 5A, fSW = 400kHz
COUT = 47μF x 3, L = 6.8μH
VOUT VSW
(200mV/Div) (5V/Div)

VIN = 12V, VOUT = 5V, IOUT = 1mA, fSW = 400kHz

Time (100μs/Div) Time (200μs/Div)

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Output Ripple Voltage Power On from EN

VIN = 12V, VOUT = 5V, IOUT =5A, fSW = 400kHz
VEN
(2V/Div)
VOUT
(10mV/Div)

VSS/TR
(1V/Div)
VIN = 12V, VOUT = 5V
IOUT = 5A, fSW = 400kHz
VSW VOUT
(5V/Div) (2V/Div)
VPGOOD
(5V/Div)

Time (4μs/Div) Time (2ms/Div)

Power Off from EN Power On from VIN

VEN
(2V/Div)

VSS/TR VIN
(5V/Div) (4V/Div)
VOUT VSS/TR
(2V/Div) (2V/Div)
VIN = 12V, VOUT = 5V
VIN = 12V, VOUT = 5V
IOUT = 5A, fSW = 400kHz
VOUT IOUT = 5A, fSW = 400kHz
VPGOOD
(5V/Div) (2V/Div)
VPGOOD
(5V/Div)
Time (200μs/Div) Time (4ms/Div)

Power Off from VIN Start-Up Dropout Performance

VIN
(4V/Div)

VSS/TR VIN
(5V/Div)
VOUT
(2V/Div)
VOUT
VIN = 12V, VOUT = 5V
VIN
IOUT = 5A, fSW = 400kHz (2V/Div)
VPGOOD
(5V/Div) VOUT
(2V/Div)
VOUT = 5V, IOUT = 0.1A, 50Ω, EN pin floats

Time (4ms/Div) Time (100ms/Div)

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Start-Up Dropout Performance

VIN

VOUT
VIN
(2V/Div)
VOUT
(2V/Div)
VOUT = 5V, IOUT = 1A, 5Ω, EN pin floats
Time (100ms/Div)

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Application Information
A general RTQ2965 application circuit is shown in typical shows minimum off-time calculation with loss terms
application circuit section. External component selection consideration :
is largely driven by the load requirement and begins with 
1 
VOUT + IOUT_MAX  RL + VD 

 
the switching frequency selection by using external resistor
RRT/SYNC. Next, the inductor L, the input capacitor CIN,  
 VIN_MIN  IOUT_MAX  RDS(ON)_H + VD 
 
tOFF_MIN 
fSW
the output capacitor COUT and freewheel diode are chosen.
Next, feedback resistors and compensation circuit are where RDS(ON)_H is the on-resistance of the high-side
selected to set the desired output voltage and crossover MOSFET; VD is the forward conduction voltage of the
frequency, and the bootstrap capacitor CBOOT can be freewheel diode; RL is the DC resistance of inductor.
selected. Finally, the remaining optional external The switching frequency fSW is set by the external resistor
components can be selected for functions such as the RRT/SYNC connected between the RT/SYNC pin and
EN, external soft-start, PGOOD, and synchronization. ground. The failure mode and effects analysis (FMEA)
consideration is applied to the RT/SYNC pin setting to
Switching Frequency Setting
avoid abnormal switching frequency operation at failure
The RTQ2965 offers adjustable switching frequency setting conditions. It includes failure scenarios of short-circuit to
and the switching frequency can be set by using external ground and the pin is left open. The switching frequency
resistor RRT/SYNC. The switching frequency range is from will be 900kHz (typically) when the RT/SYNC pin is
100kHz to 2.5MHz. The selection of the operating shorted to ground, and 240kHz (typically) when the pin is
frequency is a trade-off between efficiency and component left open. The equation below shows the relation between
size. High frequency operation allows the use of smaller setting frequency and the RRT/SYNC value.
inductor and capacitor values. Operation at lower 120279
frequencies improves efficiency by reducing internal gate RRT/SYNC (k ) =
fSW1.033
charge and transition losses, but requires larger inductance
where fSW (kHz) is the desired setting frequency. It is
values and/or capacitance to maintain low output ripple
recommended to use 1% tolerance or better, and the
voltage. The additional constraints on operating frequency
temperature coefficient of 100 ppm or less resistors. Figure
are the minimum on-time and minimum off-time. The
4 shows the relationship between switching frequency and
minimum on-time, tON_MIN, is the smallest duration of time
the RRT/SYNC resistor.
in which the high-side switch can be in its “on” state.
The minimum on-time of the RTQ2965 is 120ns (typically). 1200

In continuous mode operation, the maximum operating

1000
frequency, fSW_MAX, can be derived from the minimum on-
time according to the formula below :
RRT/SYNC (k Ω )

800
VOUT
fSW_MAX =
tON_MIN  VIN_MAX 600

where VIN_MAX is the maximum operating input voltage. 400

The minimum off-time, tOFF_MIN, is the smallest amount of
200
time that the RTQ2965 is capable of tripping the current
comparator and turning the high-side MOSFET back off. 0
The minimum off-time of the RTQ2965 is 130ns (typically). 0 500 1000 1500 2000 2500
If the switching frequency should be constant, the required
off-time needs to be larger than minimum off-time. Below f SW (kHz)
Figure 4. Switching Frequency vs. RRT/SYNC

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RTQ2965-QA
Inductor Selection The current flowing through the inductor is the inductor
The inductor selection trade-offs among size, cost, ripple current plus the output current. During power up,
efficiency, and transient response requirements. Generally, faults, or transient load conditions, the inductor current
three key inductor parameters are specified for operation can increase above the calculated peak inductor current
with the device: inductance value (L), inductor saturation level calculated above . In transient conditions, the inductor
current (ISAT), and DC resistance (DCR). current can increase up to the switch current limit of the
device. For this reason, the most conservative approach
A good compromise between size and loss is a 30% peak-
is to specify an inductor with a saturation current rating
to-peak ripple current to the IC rated current. The switching
which is equal to or greater than the switch current limit
frequency, input voltage, output voltage, and selected
rather than the peak inductor current. It is recommended
inductor ripple current determines the inductor value as
to use shielded inductors for good EMI performance.
follows :
V  (VIN  VOUT )
L = OUT Input Capacitor Selection
VIN  fSW  IL
Input capacitance, CIN, is needed to filter the pulsating
Larger inductance values result in lower output ripple
current at the drain of the high-side MOSFET. The CIN
voltage and higher efficiency, but a slightly degraded
should be sized to do this without causing a large variation
transient response. This results in additional phase lag in
in input voltage. The peak-to-peak voltage ripple on input
the loop and reduces the crossover frequency. As the ratio
capacitor can be estimated as equation below :
of the slope-compensation ramp to the sensed-current
ramp increases, the current-mode system tilts towards
VCIN = D  IOUT  1  D + ESR  IOUT
voltage-mode control. Lower inductance values allow for CIN  fSW
where
smaller case size, but the increased ripple lowers the V
D = OUT
effective current limit threshold and increases the AC VIN 
losses in the inductor. It also causes insufficient slope Figure 5 shows the CIN ripple current flowing through the
compensation and ultimately loop instability as duty cycle input capacitors and the resulting voltage ripple across
approaches or exceeds 50%. When duty cycle exceeds the capacitors.
50%, below condition needs to be satisfied :
For ceramic capacitors, the equivalent series resistance
V
4  fSW  OUT (ESR) is very low, the ripple which is caused by ESR can
L
A good compromise among size, efficiency, and transient be ignored, and the minimum value of effective input
response can be achieved by setting an inductor current capacitance can be estimated as equation below :
ripple (ΔIL) with about 10% to 50% of the maximum rated D 1  D 
CIN_MIN = IOUT_MAX 
output current (5A). VCIN_MAX  fSW
where ΔVCIN_MAX is maximum input ripple voltage.
To enhance the efficiency, choose a low-loss inductor
having the lowest possible DC resistance that fits in the
allotted dimensions. The inductor value determines not
VCIN
only the ripple current but also the load-current value at CIN Ripple Voltage

which DCM/CCM switchover occurs. The selected inductor

VESR = IOUT x ESR
should have a saturation current rating greater than the
peak current limit of the device. The core must be large
(1-D) x IOUT
enough not to saturate at the peak inductor current (IL_PEAK) :
CIN Ripple Current
V  (VIN  VOUT ) D x IOUT
IL = OUT
VIN  fSW  L
IL_PEAK = IOUT_MAX + 1 IL D x tSW (1-D) x tSW
2
Figure 5. CIN Ripple Voltage and Ripple Current
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 RTQ2965-QA
In addition, the input capacitor needs to have a very low frequency noise, an additional small 0.1μF capacitor should
ESR and must be rated to handle the worst-case RMS be placed close to the part and the capacitor should be
input current. The RMS ripple current (IRMS) of the regulator 0402 or 0603 in size. X7R capacitors are recommended
can be determined by the input voltage (VIN), output voltage for best performance across temperature and input voltage
(VOUT), and rated output current (IOUT) as the following variations.
equation :
V VIN Output Capacitor Selection
IRMS  IOUT _MAX  OUT  1
VIN VOUT The selection of COUT is determined by considering to
From the above, the maximum RMS input ripple current satisfy the voltage ripple and the transient loads. The peak-
occurs at maximum output load, which will be used as to-peak output ripple, ΔVOUT, is determined by :
the requirements to consider the current capabilities of VOUT = IL  ESR + 1 
the input capacitors. The maximum ripple voltage usually  8  fSW  COUT 
occurs at 50% duty cycle, that is, VIN = 2 x VOUT. It is Where the ΔIL is the peak-to-peak inductor ripple current.
common to use the worse IRMS ≅ 0.5 x IOUT_MAX at VIN = 2 The highest output ripple is at maximum input voltage
x VOUT for design. Note that ripple current ratings from since ΔIL increases with input voltage. Multiple capacitors
capacitor manufacturers are often based on only 2000 placed in parallel may be needed to meet the ESR and
hours of life which makes it advisable to further de-rate RMS current handling requirements.
the capacitor, or choose a capacitor rated at a higher Regarding to the transient loads, the VSAG and VSOAR
temperature than required. requirement should be taken into consideration for
Several capacitors may also be paralleled to meet size, choosing the effective output capacitance value. The
height and thermal requirements in the design. For low amount of output sag/soar is a function of the crossover
input voltage applications, sufficient bulk input capacitance frequency factor at PWM, and can be calculated from
is needed to minimize transient effects during output load below equation :
changes.  1 
VSAG = VSOAR = IOUT  ESR + 
 2    COUT  fC 
Ceramic capacitors are ideal for switching regulator
applications because of its small size, robustness, and Ceramic capacitors have very low equivalent series
very low ESR. However, care must be taken when these resistance (ESR) and provide the best ripple performance.
capacitors are used at the input. A ceramic input capacitor The X7R dielectric capacitor is recommended for the best
combined with trace or cable inductance forms a high performance across temperature and input voltage
quality (under damped) tank circuit. If the RTQ2965 circuit variations. The variation of the capacitance value with
is plugged into a live supply, the input voltage can ring to temperature, DC bias voltage and switching frequency
twice its nominal value, possibly exceeding the device's needs to be taken into consideration. For example, the
rating. This situation is easily avoided by placing the low capacitance value of a capacitor decreases as the DC bias
ESR ceramic input capacitor in parallel with a bulk across the capacitor increases. Be careful to consider the
capacitor with higher ESR to damp the voltage ringing. voltage coefficient of ceramic capacitors when choosing
the value and case size. Most ceramic capacitors lose
The input capacitor should be placed as close as possible
50% or more of their rated values when used near their
to the VIN pin with a low inductance connection to the
rated voltage.
GND of the IC. The VIN pin must be bypassed to ground
with a minimum value of effective capacitance 3μF. For Transient performance can be improved with a higher value
400kHz switching frequency application, two 4.7μF, X7R output capacitor. Increasing the output capacitance will
capacitors can be connected between the VIN pin and the also decrease the output voltage ripple.
GND pin. The larger input capacitance is required when a
Freewheel Diode Selection
lower switching frequency is used. For filtering high
When the high-side MOSFET turns off, inductor current
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RTQ2965-QA
is supplied through the external low-side diode, freewheel output voltage is set according to the following equation :
diode, connected between the SW pin and GND.  R1 
VOUT = VREF   1 + 
 R2 
The reverse voltage rating of freewheel diode should be
where the reference voltage VREF, is 0.8V (typically).
equal to or greater than the VIN_MAX. The maximum average
VOUT
forward rectified current of freewheel diode should be equal
to or greater than the maximum load current. Considering
R1
the efficiency performance, the diode must have a FB
minimum forward voltage and reverse recovery time. So
RTQ2965
Schottky Diodes are recommended to be freewheel diode. R2

The selected forward voltage of Schottky Diode must be GND

less than the restriction of forward voltage in Figure 6 at

Figure 7. Output Voltage Setting
operating temperature range to avoid the IC malfunction.
1.45 The placement of the resistive divider should be within
Restriction of Forward Voltage (V)

1.40
5mm of the FB pin. The resistance of R2 should not be
larger than 80kΩ for noise immunity consideration. The
1.35
resistance of R1 can then be obtained as below :
1.30
R2  (VOUT  VREF )
1.25 R1 =
VREF
1.20
For better output voltage accuracy, the divider resistors
1.15
(R1 and R2) with ±1% tolerance or better should be used.
1.10

1.05 Compensation Network Design

1.00 The purpose of loop compensation is to ensure stable

-50 -25 0 25 50 75 100 125 150 operation while maximizing the dynamic performance. An
Temperature (°C) undercompensated system may result in unstable
Figure 6. Restriction of Forward Voltage vs. Temperature operation. Typical symptoms of an unstable power supply
The losses of freewheel diode must be considered in order include: audible noise from the magnetic components or
to ensure sufficient power rating for diode selection. The ceramic capacitors, jittering in the switching waveforms,
conduction loss in the diode is determined by the forward oscillation of output voltage, overheating of power MOSFET
voltage of the diode, and the switching loss in the diode and so on.
can be determined by the junction capacitor of the diode. In most cases, the peak current mode control architecture
The power dissipation of the diode can be calculated as used in the RTQ2965 only requires two external
following formula components to achieve a stable design as shown in Figure
 V  8. The compensation can be selected to accommodate
PD = PD_CON + PD_SW = IOUT  VD   1 OUT 
 VIN  any capacitor type or value. The external compensation
1 2 also allows the user to set the crossover frequency and
+  CJ   VIN + VD   fSW
2 optimize the transient performance of the device. At around
where CJ is the junction capacitance of the freewheel diode. the crossover frequency, the peak current mode control
(PCMC) equivalent circuit of Buck converter can be
Output Voltage Programming
simplified as shown in Figure 9. The method presented
The output voltage can be programmed by a resistive divider
here is easy to calculate and ignore the effects of the
from the output to ground with the midpoint connected to
internal slope compensation. Since the slope
the FB pin. The resistive divider allows the FB pin to sense
compensation is ignored, the actual crossover frequency
a fraction of the output voltage as shown in Figure 7. The
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 RTQ2965-QA
is usually lower than the crossover frequency used in the 4. The compensation pole is set to the frequency at the
calculations. It is always necessary to make a ESR zero or 1/2 of the operating frequency. Output
measurement before releasing the design for final capacitor and its ESR provide a zero, and optional
production. Though the models of power supplies are CCOMP2 can be used to cancel this zero.
theoretically correct, they cannot take full account of the R  COUT
CCOMP2 = ESR
circuit parasitic and component nonlinearity, such as the RCOMP

ESR variations of output capacitors, the nonlinearity of If 1/2 of the operating frequency is lower than the ESR
inductors and capacitors, etc. Also, circuit PCB noise and zero, the compensation pole is set at 1/2 of the
limited measurement accuracy may also cause operating frequency.
CCOMP2 = 1
measurement errors. A Bode plot is ideally measured with
2  fsw  RCOMP
a network analyzer while Richtek application note AN038 2
provides an alternative way to check the stability quickly Note: Generally, CCOMP2 is an optional component used
and easily. Generally, follow the steps below to calculate to enhance noise immunity.
the compensation components :
COMP
1. Set up the crossover frequency, f C. For stability
RCOMP
purposes, the target is to have a loop gain slope that RTQ2965 CCOMP2
is −20dB/decade from a very low frequency to beyond (option)
CCOMP
the crossover frequency. In general, one-twentieth to
one-tenth of the switching frequency (5% to 10% of GND

fsw) is recommended to be the crossover frequency.

Do “NOT” design the crossover frequency over 80kHz Figure 8. External Compensation Components
with the RTQ2965. For dynamic purposes, the higher VOUT
the bandwidth, the faster the load transient response. RESR
gm_cs
RL
The downside of the high bandwidth is that it increases COUT
the susceptibility of the regulators to board noise which
ultimately leads to excessive falling edge jitter of the
switch node voltage.
R1
VFB
2. RCOMP can be determined by : VCOMP -
EA
2  fC  VOUT  COUT 2  fC  COUT + VREF R2
RCOMP = =  RCOMP
gm  VREF  gm_cs gm  gm_cs CCOMP2
(option)
R1 + R2 CCOMP
R2
where gm is the error amplifier gain of trans-
Figure 9. Simplified Equivalent Circuit of Buck with
conductance (440μA/V) ; gm_cs is COMP to current
PCMC
sense trans-conductance (17A/V); the variation of COUT
with temperature, DC bias voltage and switching Bootstrap Driver Supply
frequency needs to be taken into consideration. The bootstrap capacitor (CBOOT) between the BOOT pin
3. A compensation zero can be placed at or before the and the SW pin is used to create a voltage rail above the
dominant pole of buck which is provided by output applied input voltage, VIN. Specifically, the bootstrap
capacitor and maximum output loading (RL). Calculate capacitor is charged through an internal diode to an internal
CCOMP : voltage source each time when the low-side freewheel
RL  COUT
CCOMP = diode conducts. The charge on this capacitor is then used
RCOMP
to supply the required current during the remainder of the
switching cycle. For most applications, a 0.1μF, 0603
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RTQ2965-QA
ceramic capacitor with X7R is recommended, and the External Bootstrap Resistor (Option)
capacitor should have a 6.3 V or higher voltage rating. The gate driver of an internal high-side MOSFET, utilized
as a high-side switch, is optimized for turning on the
External Bootstrap Diode
switch. The gate driver is not only fast enough for reducing
It has to add an external bootstrap diode between an switching power loss, but also slow enough for minimizing
external 5V voltage supply and the BOOT pin to enhance EMI. The EMI issue is worse when the switch is turned
the drive capability for the high-side MOSFET and improve on rapidly due to induced high di/dt noises. When the
efficiency when the input voltage is below 5.5V or duty high-side MOSFET is turned off, the SW node will be
ratio is higher than 65%. The recommended application discharged relatively slow by the inductor current because
circuit is shown in Figure 10. The bootstrap diode can be the presence of the dead time when both the high-side
a low-cost one, such as 1N4148. The external 5V can be MOSFET and low-side freewheel diode are turned off.
a fixed 5V voltage supply from the system, or a 5V output
In some cases, it is desirable to reduce EMI further, even
voltage generated by the RTQ2965. Note that the VBOOT−
at the expense of some additional power dissipation. The
SWmust be lower than 5.5V. Figure 11 shows efficiency
turn-on rate of the high-side MOSFET can be slowed by
comparison between with and without bootstrap diode.
placing a small bootstrap resistor RBOOT between the
5V
BOOT pin and the external bootstrap capacitor as shown
DBOOT in Figure 12. The recommended range for the RBOOT is
BOOT several ohms to 10 ohms, and it could be 0402 or 0603 in
CBOOT size.
RTQ2965
0.1µF
SW This will slow down the rates of the high-side switch turn-
on and the rise of VSW. In order to improve EMI performance
Figure 10. External Bootstrap Diode and enhancement of the internal high-side MOSFET, the
recommended application circuit is shown in Figure 13,
100
VIN = 4.5V, VOUT = 3.3V, which includes an external bootstrap diode for charging
98 L = 744325780, 7.8μH, the bootstrap capacitor and a bootstrap resistor RBOOT
96 fSW = 300kHz
placed between the BOOT pin and the capacitor/diode
94
connection.
Efficiency (%)

92
RBOOT
90
BOOT
88 With Bootstrap Diode (1N4148)
RTQ2965 CBOOT
86 Without Bootstrap Diode
84 SW

82
80 Figure 12. External Bootstrap Resistor at the BOOT Pin
0 1 2 3 4 5 5V
Output Current (A)
DBOOT
Figure 11. Efficiency Comparison between with and RBOOT
BOOT
without Bootstrap Diode
RTQ2965 CBOOT

SW

Figure 13. External Bootstrap Diode and Resistor at the

BOOT Pin

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 RTQ2965-QA
EN Pin for Start-Up and UVLO Adjustment the SS/TR pin to ground or controlled by external ramp
For automatic start-up, the EN pin has an internal pull-up voltage to SS/TR pin. An internal current source ISS (1.7μA,
current source IEN (1.2μA, typically) that enables operation typically) charges an external capacitor to build a soft-
of the RTQ2965 when the EN pin floats. If the EN voltage start ramp voltage. The internal charging current source
rises above the VTH_EN (1.2V, typically) and the VIN voltage ISS gradually increases the voltage on CSS/TR, and the high-
is higher than VUVLOH (4.3V, typically), the device will be side MOSFET will start switching if voltage difference
turned on, that is, switching is enabled and soft-start between SS/TR pin and FB pin is equal to 42mV ( i.e.
sequence is initiated. If the high UVLO is required, the VSS/TR − VFB = 42mV, typically) during power-up period.
EN pin can be used to adjust the under-voltage lockout The FB voltage will track the SS/TR pin ramp voltage with
(UVLO) threshold and hysteresis. There is an additional a SS/TR to FB offset voltage (42mV, typically) during soft-
hysteresis current source IEN_Hys (3.4μA, typically) which start interval. The typical soft-start time (tSS) which is the
is sourced out of the EN pin when the EN pin voltage duration of VOUT rises from 10% to 90% of setting value is
exceeds VTH_EN. When the EN pin drops below VTH_EN, calculated as follows :
V  0.8
the IEN_Hys is removed. Therefore, the EN pin can be t SS = CSS/TR  REF
ISS
externally connected to VIN by adding two resistors, RENH
If a heavy load is added to the output with large
and RENL to achieve UVLO adjustment as shown in Figure
capacitance, the output voltage will never enter regulation
14.
because of UVP. Thus, the device remains in hiccup
According to the desired start and stop input voltage, the operation. The CSS/TR should be large enough to ensure
resistance of REN1 and REN2 can be obtained as below : soft-start period ends after COUT is fully charged.
VStart  VStop ISS  VOUT
REN1 = CSS/TR  COUT 
IEN_Hys 0.8  ICOUT_CHG
VTH_EN
REN2 = where ICOUT_CHG is the COUT charge current which is
VStart  VTH_EN
+ IEN related to the switching frequency, inductance, high-side
REN1
MOSFET peak current limit and load current.
where IEN is the enable pull-up current source value before
the EN pin voltage exceeds the VTH_EN (1.2μA typically). Power-Good Output
The EN pin, with high-voltage rating, supports wide input The RTQ2965GQW features an open-drain power-good
voltage range to adjust the VIN UVLO. output (PGOOD) to monitor the output voltage status. The
REN1 PGOOD pin is an open-drain power-good indication output
VIN EN and is to be connected to an external voltage source
REN2 RTQ2965 through a pull-up resistor.
GND It is recommended to use pull-up resistance between the
values of 1 and 10kΩ to reduce the switching noise
Figure 14. Resistive Divider for Under-Voltage Lockout coupling to PGOOD pin.
Threshold Setting
Synchronization
Soft-Start and Tracking Control The RTQ2965 can be synchronized with an external clock
The RTQ2965GQW provides adjustable soft-start function. ranging from 300kHz to 2.2MHz which is applied to the
The soft-start function is used to prevent large inrush RT/SYNC pin. The minimum synchronous pulse width of
current while converter is being powered-up. The the external clock must be larger than 20ns and the
RTQ2965GQW provides an SS/TR pin so that the soft- amplitude should have valleys that are below 0.5V and
start time can be programmed by selecting the value of peaks above 2V (up to 6V). The rising edge of the SW will
the external soft-start capacitor CSS/TR connected from

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RTQ2965-QA
be synchronized to the falling edge of the RT/SYNC pin
signal.
The switching frequency control of the RTQ2965 will switch
from the RT resistor setting mode to the synchronization
mode when the external clock is applied to the RT/SYNC
pin. The RTQ2965 transitions from the RT resistor setting
mode to the synchronization mode within 60
microseconds. Figure 15 and Figure 16 show the device
synchronized to an external system clock in power saving
mode (PSM) and continuous conduction mode (CCM).
The sub-harmonic oscillation may occur for duty cycle Figure 16. Synchronization Mode in CCM
greater than 50% in CCM at synchronization mode. By Thermal Considerations
choosing a larger inductor, more slope compensation can
In many applications, the RTQ2965 does not generate
be achieved and the risk of such sub-harmonic oscillations
much heat due to its high efficiency and low thermal
is eliminated.
resistance of its WDFN-10L 4x4 and SOP-8 (Exposed pad)
The switching frequency of synchronization should be packages. However, in applications which the RTQ2965
equal to or higher than the frequency set with the RT runs at a high ambient temperature and high input voltage
resistor. For example, if the switching frequency of or high switching frequency, the generated heat may
synchronization will be 500kHz and higher, the RRT/SYNC exceed the maximum junction temperature of the part.
should be selected for 500kHz. Be careful to design the
The junction temperature should never exceed the
compensation network and inductance for switching
absolute maximum junction temperature TJ(MAX), listed
frequency controlled by both RT resistor setting mode
under Absolute Maximum Ratings, to avoid permanent
and the synchronization mode.
damage to the device. If the junction temperature reaches
approximately 175°C, the RTQ2965 stops switching the
high-side MOSFET until the temperature cools down by
15°C.
The maximum power dissipation can be calculated by
the following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA(EFFECTIVE)
where TJ(MAX) is the maximum allowed junction temperature
of the die. For recommended operating condition
specifications, the maximum junction temperature is
150°C. T A is the ambient operating temperature,
Figure 15. Synchronization Mode in PSM
θJA(EFFECTIVE) is the system-level junction to ambient
thermal resistance. It can be estimated from thermal
modeling or measurements in the system.
The thermal resistance of the device strongly depends on
the surrounding PCB layout and can be improved by
providing a heat sink of surrounding copper ground. The
addition of backside copper with thermal vias, stiffeners,
and other enhancements can also help reduce thermal
resistance. Carefully select the freewheel diode to ensure
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 RTQ2965-QA
that thermal performance will not be limited by the  Place freewheel diode, D1, and inductor, L1, as close to
freewheel diode. the IC as possible to reduce the area size of the SW
If the application calls for a higher ambient temperature exposed copper to reduce the electrically coupling from
and may exceed the recommended maximum junction this voltage.
temperature of 150°C, care should be taken to reduce the  Connect the feedback sense network behind via of output
temperature rise of the part by using a heat sink or air capacitor.
flow.  Place the feedback components RFB1 / RFB2 / CFF near
Note that the over-temperature protection is intended to the IC.
protect the device during momentary overload conditions.  Place the compensation components RCP1 / CCP1 / CCP2
The protection is activated outside of the absolute near the IC.
maximum range of operation as a secondary fail-safe and
 The RT/SYNC resistor, RRT/SYNC, should be placed as
therefore should not be relied upon operationally.
close to the IC as possible because to the RT/SYNC
Continuous operation above the specified absolute
pin is sensitive to noise.
maximum operating junction temperature may impair
device reliability or permanently damage the device. Figure 17 and Figure 18 are the RTQ2965GQW layout
examples.
Layout Guidelines
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of
the RTQ2965 :
 Four-layer or six-layer PCB with maximum ground plane
is strongly recommended for good thermal performance.
 Keep the traces of the main current paths wide and
short.
 Place high frequency decoupling capacitor CIN5 as close
to the IC as possible to reduce the loop impedance and
minimize switch node ringing.
 Place bootstrap capacitor, CBOOT, as close to the IC as
possible. Routing the trace with width of 20mil or wider.
 Place multiple vias under the device near VIN and GND,
and close to input capacitors to reduce parasitic
inductance and improve thermal performance. To keep
thermal resistance low, extend the ground plane as much
as possible. Add thermal vias under and near the
RTQ2965 to additional ground planes within the circuit
board and on the bottom side.
 The high frequency switching nodes, SW and BOOT,
should be as small as possible. Keep analog
components away from the SW and BOOT nodes.

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31
 L1

COUT1 COUT2 COUT3

SW should be connected to
inductor / diode by wide and
D1 short trace. Keep sensitive
components away from this
trace. Reducing area of SW
trace as possible.

CIN1 CIN2 CIN3 CIN4 CIN5

REN1 CCP2

Input capacitors must be CCP1

REN2 RCP1
placed as close to IC
RRT RFB2
VIN-GND as possible. CSS RFB1 The feedback and compensation
CFF components must be connected
The exposed pad must be soldered to a large as close to the device as possible.
GND plane and add 6 thermal vias with
0.25mm diameter on exposed pad for thermal
dissipation.
Top Layer

Figure 17. Layout Guide for RTQ2965GQW (Top Layer)

Place the CBOOT on another layer and
connect by short trace. Keep sensitive
components away from this trace.

Bottom Layer

Figure 18. Layout Guide for RTQ2965GQW (Bottom Layer)

RTQ2965-QA
Outline Dimension

H
A

EXPOSED THERMAL PAD Y

(Bottom of Package)
J X B

C
I
D

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 4.801 5.004 0.189 0.197
B 3.810 4.000 0.150 0.157
C 1.346 1.753 0.053 0.069
D 0.330 0.510 0.013 0.020
F 1.194 1.346 0.047 0.053
H 0.170 0.254 0.007 0.010
I 0.000 0.152 0.000 0.006
J 5.791 6.200 0.228 0.244
M 0.406 1.270 0.016 0.050
X 2.000 2.300 0.079 0.091
Option 1
Y 2.000 2.300 0.079 0.091
X 2.100 2.500 0.083 0.098
Option 2
Y 3.000 3.500 0.118 0.138

8-Lead SOP (Exposed Pad) Plastic Package

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 RTQ2965-QA

2 1 2 1

DETAIL A
Pin #1 ID and Tie Bar Mark Options

Note : The configuration of the Pin #1 identifier is optional,

but must be located within the zone indicated.

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 0.700 0.800 0.028 0.031
A1 0.000 0.050 0.000 0.002
A3 0.175 0.250 0.007 0.010
b 0.250 0.350 0.010 0.014
D 3.900 4.100 0.154 0.161
D2 3.250 3.350 0.128 0.132
E 3.900 4.100 0.154 0.161
E2 2.550 2.650 0.100 0.104
e 0.800 0.031
L 0.350 0.450 0.014 0.018

W-Type 10L DFN 4x4 Package

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RTQ2965-QA
Footprint Information

Footprint Dimension (mm)

Package Number of Pin Tolerance
P A B C D Sx Sy M
Option1 2.30 2.30
PSOP-8 8 1.27 6.80 4.20 1.30 0.70 4.51 ±0.10
Option2 3.40 2.40

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 RTQ2965-QA

Number of Footprint Dimension (mm)

Package Tolerance
Pin P A B C D Sx Sy M
V/W/U/XDFN4x4-10 10 0.80 4.80 3.10 0.85 0.40 3.40 2.70 3.60 ±0.05

Richtek Technology Corporation

14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789

Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.

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