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D 51464 (Pages 3) Name...................................... .
Reg. No .................................
THIRD SEMESTER B.TECH. (ENGINEERING) DEGREE
EXAl'IINATION, DECEl\'lBER 2008
EN 0-1 :301-,-\ ENGINEER[NG l\IATHEMATICS-IIl
(2004 Admissions)
[Common to all Branches except CSIIT]
Time: Three Hours Maximum: 100 Marks
.-tnS!l'er all qllestions.
I. (a) Show that the vectors (1, 2, 8), (3, 2, 1) and (5, 5, 5) in R(al are linearly dependent,
(b) Find the basis and the dimension of the sub-space generated by (2.3, I, 2), (-1, 4, 3.0) and
(7, - 6, l1, 4) in R(I).
(c) Find the Fourier sine transformation of e-;l: + e-
2
,,',
(d) Using Fourier integral prove that:
O<x<rt
"- 1 - cos Art. ~ /'
----SIll XI\, ( A
J
o A.
x>rt
(e) A random variable X has the probability distribution given belo\\' ;
x o 1 2 3 5
P(X)
/
9 3 /9 _?a (,2 '_'Ja
2
2 a ~
'. ; a ... Q...
Find the value of 'a' and P (X ~ 3).
(f) Find the mean and variance of the geometric distribution:
_ 2 (3)11
P - - - It =0, 1, 2, 3, .. " upto r.,
II 5 5
(g) The mean weight of a random sample of size 100 is 63 gms, If the standard deviation of the
weight of the population is 3 gms, find a 95% confidence limits of the mean weight of the
population.
(h) The average marks in Mathematics I of a sample of 90 students was 56 and the standard
deviation was 5 marks. Test the hypothesis that the average marks of the Mathematics I of
the population is 58,
(8 x 5 =40 marks)
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2. (a) (i)
(ii)
(b). (i)
(ii)
3. (a) (i)
(ii)
(b) (i)
(ii)
4. (a) (i)
(ii)
2 D 51464
Prove that the vectors (1, 1, 0, 0) (0, 1. 0, 1), (0, 1, 1, 1) and (1, 1, 1, 1) form a basis of
vector space R(I), Express (2, 1, I, 2) as a linear combination of the basis,
(7 marks)
Find a basis and dimension of the sub space generated by the vectors (2, 1, 1, - n,
(0, I, 2, 2), (1, - 1. 1, 0) and (1, -I, .1. a) in RI I).
(8 marks)
. 0,.
Verify whether the following represents an iuner product in IV
2
) <II, r> =2x} ,)', + x
2
)'1
+ x
1
,)'2 where 11, =(x)' x
2
) and (' =(.-"1' Y'l.)'
(7 marks)
Find an orthonormal basis for the set of basis (1, 1, 1), (1, - 1, 0) and (0, 1, -1) in R(:J).
(8 marks)
Find the Fourier transform of e-
h1
. (7 marks)
oJ
Find the Fourier cosine transform of e-
x
- x> o. (8 marks)
Or
, cos i.x'" It _. . --
Usmg FourIer mtegral show that r oJ ciA. =-e .\ ,It O. (7 marks)
2
e-
ax
Find the Fourier sine transform of --. (8 marks)
:t'
Find the value of k, the probability distribution function and P[X < 7J of the density
function:
2

f (x) ={k:c
5k (10 -:c) 5 ."t 10
(7 marks)
In a factory 10% of the rivets manufactured are defective. In a random chosen 10 rivets.
What the probability that (i) not more than one rivet is defective: (ii) atleast 3 rivets are
defectives.
(8 marks)
Or
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:3 D 51464
(b) (i) In a normal distribution 10% of the items are below 5:'5 and 20% are above 59. Find the
mean and variance of the normal distribution.
(7 marks)
(Ii) The weights of certain brand shampoo packets are uniformly distributed between 9.8 gms
to to.:3;'5 gms. In a random lot of too packet how many packets; (i) exceed 10 gms ;
(ii) below 10.2 gms.
(8 marks)
5. (a) (i) A random sample of heights of 4,900 soldiers has a mean of 69 inches and S.D. of 3.1
inches and a random sample of heights of 1600 sailors has a mean of 67.95 inches and
S.D. of 2.9 inches. Test whether the heights of soldiers and sailors differ significantly.
(7 marks)
(ii) The content of nitrate in every quintal bag of certain fel-tilizer is set at 12 kg. In a sample
of 10 such bags the content of nitrate are found to be 11, 11, 13, 13, 14, 12, 12, 10, 11, 10.
Is there reason to believe that the differce from the set value significant '?
(8 marks)
0,.
(b) Fit a Poisson distribution for the following data and test the goodness of fit :
.t' 0 1 2 3 4 5 6
f
278 73 29 6 5 3 1
[4 x 15
(15 marks)
60 marks]
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D 51466 (Pages 4) Name..................................... .
Reg. No................................. .
THIRD SEMESTER B.TECH. (ENGINEERING) DEGREE
EXAMINATION, DECEMBER 2008
CR 04 302-COMPUTER PROGRAMMING IN C
(Common to all except CS, IT, PT)
[2004 Admissions]
Time: Three Hours Maximum: 100 Marks
I.
(a) What is an algorithm? What are the characteristics necessary for a sequence of instructions
to qualifY as an algorithm ?
(b) How does a flowchart help a programmer in program development?
(c) List the relational operators used in C and explain their precedence relationship_
(d)
What is an escape sequence? Explain.
. (e)
State the uses of go to and label statements in C.
(f)
Explain four loop with an example.
(g)
Explain the concept of pointers and arrays with. an exaI!lple!
(h)
Explain array of structures with an example.
(8 x 5 =40 marks)
II.
(a)
What is a system? Why do we refer to a computer as a system? (5 marks)
(b) Draw flowcharts for the two different structures used for iteration logic. (5 marks)
(c) What is a generalized algorithm? Why should programs be general in nature? (5 marks)
Or
(a)
What characteristics are desirable for a good computer language? (5 marks)
(b)
What is a self-documenting language? Illustrate with an example. (5 marks)
(c) Name the three different categories of computer languages. (5 marks)
III. (a)
Ifyou have access to a computer system with the C compiler, find out the details of the operating
system and special features ofthe compiler.
(5 marks)
(b) Find errors, if any, in the following assignment statements and rectify them:
(i) x = y = z = 0.5, 2.0, -5.75 ;
(ii) m =++ a '" 5 ;
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2 D 111466
(iii) y = sqrt (100) ;
(iv)
p*=xIy
(v)
8 =15;
(vi)
Cl = b++ - C * 2.
(10 marks)
Or
(a) (i) State the use of size of operator and how does it work.
(ii) State the use ofmodulers operator and how does it work.
(8 marks)
(b) List the special operators used in C. Explain with examples. (7 marks)
IV. (a) Write a program to generate armstrong number. (5 marks)
(b) Explain do-while loop with an example. (5 marks)
(c) Compare and contrast for and do-while loops. (5 marks)
Or
(a) In what ways does a switch statement differ from an it statement? (5 marks)
(b) Find errors, if any, in each of the following looping segments. Assume that all the variables
have been declared and assigned values :
(i) While (count! = 10) ;
Count = 1;
Sum=sum+x;
Count = count + 1 ;
(ii) name =0 ;
do (name = name + 1 ;
print {(UMy name is John\nU);}
while (name = 1)
(iii) do;
total = total + value;
scan {(liCk f', & value) ;
while (value? =999) ;
..
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p
3 D 51466
(iv) for(X =1, X > 10 ; X =X + 1)
-}
(v) m = 1
n = 0;
for ( ; m + n < 19 ; ++ n) ;
print f("Hello\n");
m=m+ 10;
(vi) for(p = 10; p> 0 ;)
P=P-l;
printf ("% f', P) ;
(10 marks)
v. (a) Assume that the arrays A and B are declared as follows:
int A[5] [4] ;
float B [4] ;
find the errors (if any) in the following program segments.
(i)
for (i = 1 ; i < =5 ; i++)
for (j =1 ; j < = 4 ;j++)
A[i] 111 =0 ;
(ii)
for (i = 1 ; i < 4 ; i++)
Scan f ("% t, B [iD ;
(iii) for (i =0 ; i < =4 ; i++)
B [i] = B[iJ + i ;
(vi) for (i =4 ; i > = 0, i --)
for (j =0 ;j < 4 ;j++)
A [iJ 111 =B 111 + 1.0 ;
(8 marks)
(b) Describe the limitations of using getchar and scanffunctions for reading strings. (7 marks)
Or
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4 D 51466
(a)
(b)
Explain the meaning and purpose of the following:
(i) Template.
(ii) Tag.
(iii) Size of.
(iv) Struet.
Write a program to copy the contents of one file into another.
(8 marks)
(7 marks)
[4 x 15 =60 marks]
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D 51483 (Pages 4) Name..................................... .
Reg. No................................ :.
THIRD SEMESTER B.TECH. (ENGINEERING) DEGREE
EXAMINATION, DECEMBER 2008
ECtAl 04 403-ELECTRIC CIRCUIT AND NETWORK THEORY
(2004 Admissions)
Time: Three Hours Maximum: 100 Marks
Part A
Answer all the questions.
1. Find V(s) for the given waveform in Fig. 1. :
v
Fig.!.
o 1
2. State and prove initial value theorem.
3. Obtain the input impedance Zin (s) for the circuit in Fig. 2. at (G) 8 =0, (b) =s =j 4 radlsec.
2Q
2Q
2s
-
4
s
Fig. 2.
8
2
+ 50s +400
4. Construct the pole zero plot for the H(s) = k 2
8 +40s + 2000
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2 D 51483
5. Find the Z parameters of the two port circuit given in Fig. 3. :
11
2Q 3Q 12
-+ ~
+
t
V V
2
Fig. 3.
1
~
6. Find the transmission parameters of the Fig. 4 given, where Za and Zb are non zero.
+
Fig. 4. V
2
7. Derive the expression for: (a) characteristic impedance (b) the cut off frequency of a low pass
filter.
8. What are the drawbacks of constant K prototype filters? What is an m-derived section?
(8 x 5 =40 marks)
PartB
II. (a) Find the inverse Laplace transform of each of the following functions:
28
28+4
(i) F()
8 = 8
2
+ 48 + 13 .
(6 marks)
(b) Write the time domain equation and find it (t) and i2 (t) using Laplace transform methods in
Fig.5.
2/tJ,F Fig. 5.
(9 marks)
Or
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3 D 51483
III. (a) A series RLC circuit with R = 5Q, L =0.2 H, and C = IF has a voltage source v = 10e-
1
90
t
applied at t = O. Find the resulting current.
(10 marks)
(b) Find the Laplace transform of:
(i) e-<lt cos wt ; (ii) 1 - e-<lt.
(5 marks)
IV. (a) A passive network in the s domain is given in Fig. 6. :
~
1(8) 2.5Q
20 Fig. 6.
s
Obtain the network function for the current l(s) due to an input voltage V(s).
(10 marks)
(b) Express the impedance Z(s) ofthe parallel combination ofL == 4H and C =IF at what frequencies
's' is this impedance zero or infinite?
(5 marks)
V. For the two port network shown in Fig. 7. find the values ofR
l
, R2 and C given that the voltage
Vo(s) 0.2
transfer function is Vi (s) = + 3s + 2
X'
(15 marks)
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4 D 51483
VI. Give the defining equation ofthe hybrid parameters. Write the relations between the h parameters
and ABCD parameters ? Why are the h parameters preferred in transistor equivalent circuit
representation?
(15 marks)
Or
VII. Determine they parameters of the circuit:
+
V Fig. 8.
2
(15 marks)
VIII. (a) Derive an expression for the cut off frequency of a T type high pass filter. (6 marks)
(b) Calculate the values of the elements of a high pass filter having a cut off frequency of 1 kHz
and operating into a load resistance of 600 Q.
(9 marks)
Or
IX. Design a prototype low pass filter ofnominal characteristic impedance 600 Q. Given that the poles
ofthe transfer Impedance function ofthe filter terminated by the nominal characteristic impedance
are 7.9 x 10
3
(-1 j 1). What is the cut off frequency of the filter?
(15 marks)
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D 51484 (Pages 2) Name.................................
), . Reg. No............................. : .... .
THIRD SEMESTER B.TECH.(ENGINEERING) DEGREE
EXAMINATION, DECEMBER 2008
EC/AI 04 304-ELECTRICAL ENGINEERING
(2004 Admissions)
Time : Three Hours Maximum: 100 Marks
Answer all questions.
I. (a) Distinguish between self-excited and separately excited d.c. generators. How are selfexcited
generators classified?
(b) Sketch the speed-torque characteristic of a dc (a) shunt motor; (b) series motor. Account for
the shape of the above characteristic curves.
(c) What are the applications of autotransformers?
(d) Explain how copper loss is calculated at different load fractions from se test.
(e) Define voltage regulation of an alternator. Explain the various factors which may affect the
regulation of an alternator.
(f) What is meant by slip in an induction motor? Why must slip be present for motor action?
(g) What is meant by (i) an indicating type instrument ; (ii) an integrating type instrument ?
Give at least one example each.
(h) Write short notes on eddy current damping.
(8 x 5 = 40 marks)
II. (a) (i) Derive the emf equation of a de generator.
(ii) The armature resistance of a 200V shunt motor is 0.4 nand noload current is 2A. When
loaded and taking an armature current of5OA, the speed is 1200 RPM. Find approximately
the noload speed.
(15 marks)
Or
(b) A 4-pole, 250 V, wave-connected shunt motor gives 10 kW when running at 1000 rpm and
drawing armature and field currents of 60 A and 1 A respectively. It has 560 conductors. Its
armature resistance is 0.2 n. Assuming a drop of IV per brush, determine: (a) total torque ;
(b) useful torque; (c) useful flux per pole; (d) rotational losses ; (e) efficiency.
(15 marks)
, ,
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2 D 514:84
III. (a) Discuss how the equivalent circuit of a transformer can be obtained from different tests.
(15 marks)
Or
(b) A transformer takes 10 A on no load at a power factor of 0.1. The turns ratio is 4: : 1. Ifa load
is supplied by the secondary at 200 A, and a p.f. of 0.8, find the primary current and pf
(internal voltage drops in transformer are to to be ignored).
(15 marks)
N. (a) Explain the starting methods used to start 3 phase induction motors. (15 marks)
Or
(b) A 3.3 kV, 20 pole, 50 Hz, 3 phase induction motor has rotar resistance and standstill reactance
of 0.014 nand 0.113 n per phase respectively. Calculate (i) the speed at which the torque
developed is maximum and ; (ii) the ratio of full load torque to maximum torque, if the full
load torque is delivered at 288 rpm.
(15 marks)
V. (a) How would you extend the range of dc ammeters and voltmeters ? Explain with suitable
diagrams.
(15 marks)
Or
(b) Describe the construction and working of a dc potentiometer. (15 marks)
[4: x 15 = 60 marks]
,
~
.
..
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. - .... - ' ~ - - " - ~ - " - - ' - ~ - .. --.- - - ~ - - - - --- ---- ~ - ---- - ~ - -
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D 51485 (Pages: 2)
Name......S,f.tr.lll...................
Reg. No.rr.rr(:}.f.G.E.C.!;).f:D
THIRD SEMESTER B.TECH. (ENGINEERING) DEGREE
EXAMINATION, DECEMBER 2008
EC 04 80S-ELECTRONIC .CmCUITS-I
(2004 admissions)
Time: Three Hours Maximum: 100 Marks
Answer all questions.
1. (a) Explain base width modulation in transistors.
(b) Sketch and explain common-emitter output characteristics of a PNP transistor.
(c) Differentiate enhancement MOSFET from Depletion MOSFET.
(d) Explain transfer curve of N-channel depletion type MOSFET.
(e) Derive an expression for voltage gain of an emitter follower.
(f) Write short note on early effect in transistors.
(g) Explain Nyquist criterion for stability with regard to stability of feedback amplifiers.
(h) Give a neat sketch ofUJT characteristics and mark all the regions.
(8 x 5 = 40 marks)
2. (a) Express common-base h-parameters in terms ofcommon emitter parameters.
Or
(b) (i) Draw a general equivalent h-parameter model of a transistor amplifier and derive
expression for current amplification (Ai) and voltage gain (Av).
(9 marks)
(ii) Neatly sketch common emitter characteristics ofa PNP transistor. (6 marks)
3. (a) (i) With a neat diagram of the structure, explain the operation of JFET. (9 marks)
(ii) Calculate the following for a JFET with Vp = - 4V, Inss =2.S mA, VGS = - 2 V.
(i) gmo'
(ii) Drain to source current, rD.
(iii) Transconductance, gm'
(6 marks)
Or
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2 D51486
(b) (i) Deseribe'the strUcture of Depletion MOSFET. (7 m a r ~ )
(ii)
V
DD
=
20
V,
Vp=3V
I
D
=lMA
IDss=2MA
For the circuit above calculate the following: (i) VGS ; (ii) gm ; (iii) Rs ; (iv) Rd for which
voltage gain = 24 dB. Assume rd Rd'
(8 marks)
4. (a) (i) With sketch, explain Hybrid-Pi (n) common-emitter modeL (9 marks)
(ii) Write note on Miller's theorem. (6 marks)
Or
(b) Sketch hybrid nand h-parameter model at low frequendes of CE configuration. Obtain
transconductance input conductance of hybrid-n model in terms of h-parameters.
(15 marks)
5. (a) Give a detailed account on how feedback amplifiers are categorised.
Or
(b) (i) Draw a voltage series feedback circuit and obtain expression for input and output
impedances.
(7 marks)
(ii) With figure, explain the working of a Wien-bridge oscillator circuit. (8 marks)
(4 x 15 =60 marks]
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D51486 (Pages 2) Name................
Reg. No...................................... .
THIRD SEMESTER B.TECH. (ENGINEERING) DEGREE
EXAMINATION, DECEMBER 2008
EC 04 306-S0LID STATE DEVICES
(2004 admissions)
Time: Three Hours Maximum: 100 Marks
Answer all questions.
Part A
1. Derive the expression for temperature dependency of carrier concentration and explain.
2. Differentiate between drift and diffusion currents.
3. Differentiate between electron and hole movement. Why electron movement is superior?
4. Explain the principle, symbol and application ofVaractor diode.
5. Explain the phenomenon of base width modulation.
6. Explain the operation of JFET. Compare with BJT.
7. Name two power devices and draw their eharaeteristics.
8. What is laser? Mention the applications.
(8 x 5 =40 marks)
. Part B
9. (a) What is effective mass? Derive the expression for it.
Or
(b) Derive the expression for carrier concentration in a semiconductor and explain.
10. (a) Derive the expression for current flow through a junction. Discuss the reverse bias current.
Or
(b) Write short notes on metal semiconductor junction, hectero junction and compare with
semiconductor junction.
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2 D61486
11. (a) Write short notes on : Kirk effect, frequency limitations of transistors and Avalanche.
breakdown.
Or
(b) Explain anyone model for MOSFETS. Discuss in detail all the aspects.
12. (a) Explain the operation and characteristics of LED. Which are the materials used for
fabrication ? What are laser diodes
Or
(b) Draw the physical structure of SeR. Discuss the doping of various junctions. Draw the
characteristics and explain anyone typical application.
(4 x 15 =60 marks)
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