Solution of Homework problems 2 in Section 10.

2

Chapter 10, Solution 1.

Known quantities:
Transistor diagrams, as shown in Figure P10.1:
(a) pnp, V
EB
= 0.6 V and V
EC
= 4.0 V
(b) npn, V
CB
= 0.7 V and V
CE
= 0.2 V
(c) npn, V
BE
= 0.7 V and V
CE
= 0.3 V
(d) pnp, V
BC
= 0.6 V and V
EC
= 5.4 V

Find:
For each transistor shown in Figure P10.1, determine
whether the BE and BC junctions are forward or
reverse biased, and determine the operating region.
Analysis:
(a) V
BE
= - 0.6 V for a pnp transistor implies that the BE junction is forward-biased.
V
BC
= V
EC
- V
EB
= 3.4 V. The CB junction is reverse-biased. Therefore, the transistor is in the
active region.
(b) V
BC
= - 0.7 V for a npn transistor implies that the CB junction is reverse-biased.
V
BE
= V
BC
- V
EC
= -0.5 V. The BE junction is reverse-biased. Therefore, the transistor is in the
cutoff region.
(c) V
BE
= 0.7 V for a npn transistor implies that the BE junction is forward-biased.
V
BC
= V
EC
- V
EB
= 0.4 V. The CB junction is forward-biased. Therefore, the transistor is in the
saturation region.
(d) V
BC
= 0.6 V for a pnp transistor implies that the CB junction is reverse-biased.
V
BE
= V
BC
V
EC
= - 4.8 V. The BE junction is forward-biased. Therefore, the transistor is in
the active region.

Chapter 10, Solution 2.

Known quantities:
Transistor type and operating characteristics:
a) npn, V
BE
= 0.8 V and V
CE
= 0.4 V
b) npn, V
CB
= 1.4 V and V
CE
= 2.1 V
c) pnp, V
CB
= 0.9 V and V
CE
= 0.4 V
d) npn, V
BE
= - 1.2 V and V
CB
= 0.6 V

Find:
The region of operation for each transistor.
Analysis:
a) Since V
BE
= 0.8 V, the BE junction is forward-biased. V
CB
= V
CE
+ V
EB
= - 0.4 V. Thus,
the CB junction is forward-biased. Therefore, the transistor is in the saturation region.
b) V
BE
= V
BC
+ V
CE
= 0.7 V. The BE junction is forward-biased.
V
CB
= 1.4 V. The CB junction is reverse-biased. Therefore, the transistor is in the active
region.
c) V
CB
= 0.9 V for a pnp transistor implies that the CB junction is forward-biased.
V
BE
= V
BC
V
CE
= - 1.3 V. The BE junction is forward-biased. Therefore, the transistor is in
the saturation region.
d) With V
BE
= - 1.2 V, the BE junction is reverse-biased.
V
CB
= - 0.6 V. The CB junction is reverse-biased. Therefore, the transistor is in the cutoff
region.

Chapter 10, Solution 3.

Known quantities:
The circuit of Figure P10.3: 100 = =
B
C
I
I
| .

Find:
The operating point and the state of the transistor.

Analysis:
V 6 . 0 =
BE
V and the BE junction is forward biased.
A
V V
I
I I I I I V I V
BE CC
B
B B C E E BE B CC
5 . 12
911910
6 . 0 12
101 910 10 820
101 & 910 10 820
3
3
=

=
+

=
= + = + + =

mA I I
B C
25 . 1 = = |
Writing KVL around the right-hand side of the circuit:
0 = + + +
E E CE C C CC
R I V R I V
( ) V R I I R I V V
E B C C C CC CE
1 . 8 ) 910 . 0 )( 0125 . 0 25 . 1 ( ) 2 . 2 )( 25 . 1 ( 12 = + = + =
V V V V
CE BE BC
5 . 7 1 . 8 6 . 0 = = = : the BC junction is reverse biased
>
BE CE
V V
The transistor is in the active region.




Chapter 10, Solution 4.

Known quantities:
The magnitude of a pnp transistor's emitter and base current, and the magnitudes of the voltages
across the emitter-base and collector-base junctions:
I
E
= 6 mA, I
B
= 0.1 mA and V
EB
= 0.65 V, V
BC
= 7.3 V.

Find:
a) V
CE
.
b) I
C
.
c) The total power dissipated in the transistor, defined as
B EB C EC
I V I V P + = .

Analysis:
a) V
EC
= V
BC
+ V
EB
= 7.3 + 0.65 = 7.95 V.
b) I
C
= I
E
- I
B
= 6 - 0.1 = 5.9 mA.
c) The total power dissipated in the transistor can be found to be:
mW I V I V P
B EB C EC
97 . 46 10 1 . 0 65 . 0 10 9 . 5 95 . 7
3 3
= + = + =





Chapter 10, Solution 5.

Known quantities:
The circuit of Figure P10.5, assuming the BJT has
V

= 0.6 V.

Find: Change 15 V to 15 V
The emitter current and the collector-base voltage.

Analysis:
Applying KVL to the right-hand side of the circuit, A
V
I
BE
E
480
30000
6 . 0 15
30000
15
=
|
.
|

\
|

=
|
.
|

\
|

=
Then, on the left-hand side, assuming | >> 1:
( ) V R I V
V R I
C C CB
CB C C
8 . 2 10 15 10 480 10 10
0 10
3 6
= = =
= + +

Chapter 10, Solution 6.

Known quantities:
The circuit of Figure P10.6, assuming the BJT has
V 6 . 0 =
BE
V and | =150.

Find:
The operating point and the region in which the
transistor operates.

Analysis:
Define

R
C
= 3.3 kO, R
E
=1.2 kO, R
1
= 62 kO, R
2
=15 kO, V
CC
=18 V
By applying Thevenins theorem from base and mass, we have
V I R I R V V
mA I I
A
R R
V V
I
V V
R R
R
V
k R R R
E E C C CC CE
B C
E B
BE BB
B
CC BB
B
857 . 7 10 15 151 1200 10 25 . 2 3300 18
25 . 2
15
) 1 (
5 . 3
078 . 12 ||
6 3
2 1
2
2 1
= = =
= =
~
+ +

=
~
+
=
= =

|
|

From the value of V
CE
it is clear that the BJT is in the active region.

Chapter 10, Solution 7.

Known quantities:
The circuit of Figure P10.7, assuming the BJT has
V 6 . 0 =

V .

Find:
The emitter current and the collector-base voltage.

Analysis:
Applying KVL to the right-hand side of the circuit,
0 = + +
EB E E BB
V R I V
A
R
V V
I
E
EB BB
E
4 . 497
10 39
6 . 0 20
3
=

= . Since 1 >> | , A 4 . 497 = ~

E C
I I
V
CC
= 20V
V
BB
= 20V
Applying KVL to the left-hand side: 0 = +
CC C C CB
V R I V
V V R I V
CC C C CB
05 . 10 20 10 20 4 . 497
3
= = =


Chapter 10, Solution 9.

Known quantities:
The collector characteristics for a certain transistor,
as shown in Figure P10.9.

Find:
a) The ratio I
C
/I
B
for V
CE
= 10 V and
A 600 and A, 200 A, 100 =
B
I


b) V
CE
, assuming the maximum allowable
collector power dissipation is 0.5 W for
A 500 =
B
I .

Analysis:
a) For I
B
= 100 A and V
CE
= 10 V, from the characteristics, we have I
C
= 17 mA. The ratio I
C
/

I
B
is 170.
For I
B
= 200 A and V
CE
= 10 V, from the characteristics, we have I
C
= 33 mA. The ratio I
C
/

I
B
is 165.
For I
B
= 600 A and V
CE
= 10 V, from the characteristics, we have I
C
= 86 mA. The ratio I
C
/

I
B
is 143.
b) For I
B
= 500 A, and if we consider an average | from a., we have I
C
= 159 500 10
-3
= 79.5
mA. The power dissipated by the transistor is
C CE B BE C CE
I V I V I V P ~ + = , therefore:

V
CE
~
P
I
C
=
0.5
79.510
3
= 6.29V.
Chapter 10, Solution 10.

Known quantities:
Figure P10.10, assuming both transistors are
silicon-based with 100 = | .

Find:
a) I
C1
, V
C1
, V
CE1
.
b) I
C2
, V
C2
, V
CE2
.

Analysis:
a) From KVL: = + + 0 30
1 1 1 BE B B
V R I
A 07 . 39
10 750
7 . 0 30
3
1
=

=
B
I
= = mA 907 . 3
1 1 B C
I I |
V 779 . 5 2 . 6 907 . 3 30 30
1 1 1
= = =
C C C
I R V
V 779 . 5
1 1
= =
C CE
V V .
b) Again, from KVL: = + + 0 779 . 5
2 2 2 E E BE
R I V mA 081 . 1
10 7 . 4
7 . 0 779 . 5
3
2
=

=
E
I
and mA 07 . 1
101
100
081 . 1
1
2 2
= |
.
|

\
|
=
|
|
.
|

\
|
+
=
|
|
E C
I I .
Also, = + + + 0 ) ( 30
2 2 2 2 CE E C C
V R R I V 574 . 3 ) 7 . 4 20 ( ) 07 . 1 ( 30
2
= + =
CE
V .
Finally, V 603 . 8 ) 20 ( ) 07 . 1 ( 30
30
2
2
2
2
= =

=
C
C
C
C
V
R
V
I .

Chapter 10, Solution 11.

Known quantities:
Collector characteristics of the 2N3904 npn
transistor, see data sheet pg. 560.

Find:
The operating point of the transistor in Figure
P10.11, and the value of | at this point.

Analysis:
Construct a load line. Writing KVL, we have: 0 5000 50 = + +
CE C
V I .
Then, if 0 =
C
I , V 50 =
CE
V ; and if 0 =
CE
V , mA 10 =
C
I . The load line is shown superimposed on
the collector characteristic below:

The operating point is at the intersection of the
load line and the A 20 =
B
I line of the
characteristic. Therefore,
mA 5 ~
CQ
I and V 20 ~
CEQ
V .
Under these conditions, an A 5 increase in
B
I
yields an increase in
C
I of approximately
mA 1 5 6 = . Therefore,
200
10 5
10 1
6
3
=

=
A
A
~

B
C
I
I
|
The same result can be obtained by checking the
h
FE
gain from the data-sheets corresponding to 5
mA.


Load line



Chapter 10, Solution 14.

Known quantities:
The circuit of Figure P10.14, V
CEsat
=0.1V, V
BEsat
=0.6V,
and =50.

Find:
The base voltage required to saturate the transistor.

Analysis:
The collector current is
mA 9 . 11
1
1 . 0 12
=

=
C
I
The base current is

I
B
=
I
C
|
=
11.9
50
= 0.238 mA= 238A
And since
mA
10
BEsat BB
B
V V
I

=
Therefore,
V V 98 . 2 6 . 0 k 10 mA 238 . 0 = + O =
BB
V





Chapter 10, Solution 16.

Known quantities:
Collector characteristics of 2N3904 npn transistor; Transistor
circuits;

Find:
The operating point;

Analysis:
From KVL,

or

If 0 =
CE
V , mA
k
I
C
99 . 4
10
9 . 49
= = , and if 0 =
C
I , V V
CE
9 . 49 = . The load
line is shown superimposed on the collector characteristic below:
The operating point is at the intersection of the load line and the
A I
B
20 = line of the characteristic. Therefore, mA I
CQ
3 ~ and
V V
CEQ
8 ~ .
Under these conditions, a A 10 increase in
B
I yields an increase
in
C
I of approximately mA mA mA 2 3 5 = . Therefore,
200
10
2
= =
A
A
~
A
mA
I
I
B
C

|
Addition of the emitter resistor effectively increased the current
gain by decreasing the magnitude of the slope of the load line.












0 ) 20 ( 5 5 50 = + + + + A I k V kI
C CE C

9 . 49 1 . 0 50 10 = = +
C CE
kI V
Chapter 10, Solution 17.

Known quantities:
For the circuit shown in Figure 10.14 in the text:
mW 100 , mA 10 V, 4 . 1
95, V, 2 . 0 V, 7 . 0 , V 5 , k 1 , mA 5 , V 5 , V 0
max
= > =
= = = = = = = =
P I V
V V V R I V V
LED LED
CEsat CC B B on off

|


Find:
Range of R
C
.

Analysis:
O =

s

= 340
01 . 0
2 . 0 4 . 1 5
LED
CEsat LED CC
C
I
V V V
R


From the maximum power
O =

>
= = =
47
mA 71
4 . 1
1 . 0
max
max
max
LED
CEsat LED CC
C
LED
LED
I
V V V
R
V
P
I

Therefore, R
C
e[47, 340] O


Chapter 10, Solution 22.

Known quantities:
For the circuit shown in Figure 10.14 in the text:
A 1
V, 1 V, 7 . 0 , V 13 , 12 , k 1 , mA 1 , V 5 , V 0
max
>
= = = = = = = =
C
CEsat CC B B on off
I
V V V R R I V V



Find:
Minimum value of | that will ensure the correct operation
of the fuel injector.

Analysis:
A 1
12
1 13
=

=
R
V V
I
CEsat CC
C

1000
10 1
1
3
max
min
=

= =

B
C
I
I
|





Chapter 10, Solution 25.

Known quantities:
The circuit of Figure P10.25: I
C
= 40 mA; Transistor
large signal parameters.

Find:
Design a constant-current battery charging circuit, that is,
find the values of V
CC
, R
1
, R
2
that will cause the transistor
Q
1
to act as a 40-mA constant current source.

Assumptions:
Assume that the transistor is forward biased. Use the
large-signal model with | = 100.

Analysis:
The battery charging current is 40 mA, I
C
= 40 mA.
Thus, the emitter current must be mA 4 . 40
1
=
+
=
E E
I I
|
|
.
Since the base-emitter junction voltage is assumed to be 0.6 V, then resistor R
2
has a voltage:
V 5 6 . 0 6 . 5
2
= = =

V V V
z
, so the required value of R
2
to be:
O = = = 8 . 123
0404 . 0
5
2
E
I
V
R
Since the only purpose of R
1
is to bias the Zener diode, we can select a value that will supply
enough current fro the Zener to operate, for example R
1
> 100 O, so that there will be as little
current flow through this resistance as possible.
Finally, we need to select an appropriate supply voltage. V
CC
must be greater than or equal to the
sum of the battery voltage, the CE junction voltage and the voltage across R
2
. That is,
5 9 + + >
CE CC
V V . A collector supply of 24 V will be more than adequate for this task.



Chapter 10, Solution 26.

Known quantities:
The circuit of Figure of P10.26.

Find:
Analyze the operation of the circuit and explain how
E
I is
decreasing until the battery is full.
Find the values of V
CC
, R
1
that will result in a practical
design.

Assumptions:
Assume that the transistor is forward biased.

Analysis:
When the Zener Diode works in its reverse breakdown area, it provides a constant voltage:
V 11 =
z
V
. That means:
V 11 = =
Z B
V V
.
When the transistor is forward biased, according to KVL,
battery BE BE Z
V V R I V + + =
, where BE
R
is the base resistance.

As the battery gets charged, the actual battery charging voltage battery
V
will increase from 9.6 V to
10.4 V.
As battery
V
increases gradually, Z
V
and
V
stay unchanged, then we can see that BE
I
will decrease
gradually.
So
( )
BE E
I I 1 + = |
will also decrease at the same time.

Since the only purpose of R
1
is to bias the Zener diode, we can select a value that will supply
enough current fro the Zener to operate, for example R
1
> 100 O, so that there will be as little
current flow through this resistance as possible.


Finally, we need to select an appropriate supply voltage. V
CC
must be greater than or equal to the
sum of the battery voltage, the CE junction voltage. That is,
CE CC
V V + >11 . A collector supply
of 12 V should be adequate for this task.



Chapter 10, Solution 32.

Known quantities:
For the circuit shown in Figure P10.32:
V 12 =
CC
V 130 = | k 82
1
= R k 22
2
= R k 5 . 0 =
E
R
16 =
L
R .

Find:
CEQ
V at the DC operating point.

Analysis:
Simplify the circuit by obtaining the Thvenin
equivalent of the biasing network (R
1,
, R
2
, V
CC
) in the base circuit:

k 35 . 17
22 82
22 82
Suppress
V 538 . 2
22 82
22 12
: VD
= =
R
+
R
R R
=
R
=
R
:
V

= =
R
+
R
R V
=
V
=
V
=
V

2 1
2 1
eq B CC
2 1
2 CC
OC TH BB
+

Redraw the circuit using the Thvenin equivalent. The "DC blocking" or "AC coupling" capacitors act as open
circuits for DC; therefore, the signal source and load can be neglected since this is a DC problem. Specify directions
of current and polarities of voltages.

Assume the transistor is operating in its active region. Then, the base-emitter junction is forward
biased.

( ) ( )
A 18 . 22
500 1 130 17350
7 . 0 538 . 2
1
= =
R
+ +
R
V
-
V
=
I
E B
BEQ BB
BQ
+ +

|

( ) ( )
V 55 . 10 5 . 0 906 . 2 12
: KVL
mA 906 . 2 10 18 . 22 1 130 1
6
= =
R I
-
V
=
V
0 =
V
+
V
-
R I
-
= + =
I
+ =
I
E EQ CC CEQ
CC CEQ E EQ
BQ EQ



|

The collector-emitter voltage is greater than its saturation value (0.3 V for Silicon). Therefore
the initial assumption (operation in the active region) was correct and the solution is valid.


Chapter 10, Solution 33.

Known quantities:
For the circuit shown in Figure P10.33:
V 12 =
CC
V 100 = | V 4 =
EE
V k 100 =
B
R
k 3 =
C
R k 3 =
E
R
k 6 =
L
R k 6 . 0 =
S
R mV ) 10 28 . 6 cos( 1
3
t v
S
= .

Find:
CEQ
V and the region of operation.

Analysis:
The "DC blocking" or "AC coupling" capacitors act as open circuits for
DC; therefore, the signal source and load can be neglected since this is a
DC problem. Specify directions of current and polarities of voltages.
Assume the transistor is operating in its active region; then, the base-
emitter junction is forward biased and:

0 =
R I
] + [ +
V
+
R I
+
V
-

0 =
R I
+
V
+
R I
+
V
-

I
] + [ =
I
[Si] 700
V
E BQ BEQ B BQ BB
E EQ BEQ B BQ BB
BQ EQ BEQ
1
: KVL
1 mV
|
| ~
| |
V 06 . 11
3000 10 10 0 . 827 3000 10 9 . 818 12 4
0 : KVL
A 0 . 827 10 189 . 8 ) 1 100 ( ) 1 (
A 9 . 818 10 189 . 8 ) 100 (
A 189 . 8
) 3000 )( 1 100 ( 100000
7 . 0 4
1

0 : KVL
) 1 (
] [ mV 700
6 6
6
6
=
+ = + =
= + +
= + = + =
= = =
=
+ +

=
+ +

=
= + + +
+ = =
~

E EQ C CQ CC EE CEQ
CC C CQ CEQ E EQ EE
BQ EQ
BQ CQ
E B
BEQ EE
BQ
E EQ BEQ B BQ EE
BQ EQ BQ CQ
BEQ
R I R I V V V
V R I V R I V
I I
I I
R R
V V
I
R I V R I V
I I I I
Si V
|
|

|
| |




The collector-emitter voltage is greater (more positive) than its saturation
value (+ 0.3 V for Silicon). Therefore the initial assumption (operation in
the active region) was correct and the solution is valid.
Notes:
1. DC power may be supplied to an npn BJT circuit by connecting the
positive terminal of a DC source to the collector circuit, or, by
connecting the negative terminal of a DC source to the emitter circuit,
or, as was done here, both.
2. In a pnp BJT circuit the polarities of the sources must be reversed. Negative to collector and
positive to emitter.

Chapter 10, Solution 35.

Known quantities:
For the circuit shown in Figure P10.35:
V 3 =
S
v 100 = | k 60 =
B
R

Find:
a) The value of
E
R so that
E
I is 1 mA.
b)
C
R so that
C
V is 5 V.
c) The small-signal equivalent circuit of the amplifier
for O = k 5
L
R
d) The voltage gain.

Analysis:
(a) With O = k 60
B
R and V 3 =
B
V , applying KVL, we have
E B B B
R I R I ) 1 ( 6 . 0 3 | + + + =
E
B
R
I
101 k 60
4 . 2
+ O
=
mA
R k
I
E
E
1
101 60
4 . 2
101 =
+ O
=
Therefore,
O =

= k 81 . 1
101
60 4 . 2 101
E
R
(b)
E E C C CE
R I R I V =15
From (a), we have mA 99 . 0
1
=
+
=
|
|
E C
I I
Therefore, O =

= k 27 . 8
99 . 0
81 . 1 5 15
C
R
(c) The small signal equivalent circuit is shown below

(d)
iw B
S
B
h R
V
I
+
= A
|
|
.
|

\
|
A =
oe
L C out
h
R I v
1

B fe
oe
out
C
I h
h
V
I A + = A
1



Since h
oe
is not given, we can reasonably assume that 1/h
oe
is very large. Therefore,
15 . 4
100
=
+

= =
ie B
L
s
out
V
h R
R
v
v
A

Chapter 10, Solution 36.

Known quantities:
For the circuit shown in Figure P10.36:
k 200 =
C
R

Find:
e) The operating point of the transistor.
f) Voltage gain
in out
v v ; current gain
in out
i i
g) Input resistance
i
r
h) Output resistance
o
r

Analysis:
(a) V 1 . 6
2 1
2
=
+
=
R R
R
V V
CC B

O = = 87 . 3749 | |
2 1
R R R
B

Assuming V 6 . 0 =
BE
V , we have
V 5 . 5 = =
BE B EV
V V V
O =

=
c
=

k
I
V
h
BQ
I
B
BE
ie
6 . 60
10 0099 . 0
6 . 0
3
c
OUT
v
v
S
+
-
AI
B
C
E
-
h
ie
oe
h
1
I A
C
R
C
R
L
+
B
R
B
A I
B
h
fe

mA 22 = =
E
E
E
R
V
I
mA 088 . 0
1
=
+
=
b
I
I
E
B

and
( )
V 12 . 5 5 . 5 10 21.912 200 - 15
5 . 5
3 -
.
= =
= =
C C CC E C CE
I R V V V V


(b) The AC equivalent circuit is shown on the
right:

O =

~ =

k
I
V
h
BQ
I
B
BE
ie
82 . 6
10 088 . 0
6 . 0
3
c
c

B C B E out
I I I R v ) 1 250 ( 250 ) ( + = + =
B ie B out ie B in
I h I v h I v + = + = 251 250
Therefore, the voltage gain is
902 . 0 = =
in
out
V
v
v
A and
B C B out
I I I i + + + = ) 1 (|
B B ie B B
B
in
B in
R I h I I
R
v
I i ) 251 250 ( + + = + =
and the current gain is
84 . 12
) 251 250 (
) 1 (
=
+ +
+
=
B B ie B B
B
in
out
R I h I I
I
i
i |

(c) To find the input resistance we compute:
B ie B in
I h I v + = 251 250
B B ie B B in
R I h I I i ) 251 250 ( + + =
Therefore. the input resistance is
O = = 3558
in
in
i
i
v
r
(d) To find the output resistance we compute
B C B E out
I I I R v ) 1 250 ( 250 ) ( + = + =
B C B out
I I I i + + + = ) 1 (|
Therefore, the output resistance is
O = = 250
out
out
o
i
v
r



Chapter 10, Solution 41.

Known quantities:
The circuit given in Figure P10.41.

Find:
Show that the given circuit functions as an OR gate
if the output is taken at v
01
.

Analysis:
Construct a state table. This table clearly describes an AND gate when the output is taken at
1 o
v .

v
1
v
2
Q
1
Q
2
Q
3
v
o1
v
o2

0 0 off off on 0 5V
0 5V off on off 5V 0
5V 0 on off off 5V 0
5V 5V on on off 5V 0


Chapter 10, Solution 42.

Known quantities:
The circuit given in Figure P10.41.

Find:
Show that the given circuit functions as a NOR gate if
the output is taken at v
02
.

Analysis:
See the state table constructed for Problem 10.41. This
table clearly describes a NOR gate when the output is
taken at
2 o
v .



Chapter 10, Solution 45.

Known quantities:
In the circuit given in Figure P10.45 the
minimum value of v
in
for a high input is 2.0 V.
Assume that the transistor Q
1
has a | of at least 10.

Find:
The range for resistor R
B
that can guarantee that the transistor is on.

Analysis:
mA 4 . 2
2000
2 . 0 5
=

=
c
i , therefore, i
B
= i
C
/| = 0.24 mA.
(v
in
)
min
= 2.0 V and (v
in
)
max
= 5.0 V, therefore, applying KVL: -v
in
+R
B
i
B
+ 0.6 = 0
or
B
in
B
i
v
R
6 . 0
= . Substituting for (v
in
)
min
and (v
in
)
max
, we find the following range for R
B
:
333 . 18 833 . 5 k R k
B
s s


Chapter 10, Solution 46.

Known quantities:
For the circuit given in Figure P10.46:
k 27 , k 10
2 1 2 1
= = = =
B B C C
R R R R .

Find:
a) v
B
, v
out
, and the state of the transistor Q
1
when
v
in
is low.
b) v
B
, v
out
, and the state of the transistor Q
1
when
v
in
is high.

Analysis:
a) v
in
is low Q
1
is cutoff v
B
= 5 V Q
2
is in saturation v
out
= low = 0.2 V.
b) v
in
is high Q
1
is in saturation v
B
= 0.2 V Q
2
is cutoff v
out
= high = 5 V.