Schematic of n-Channel Enhancement
Mode MOSFET
MOSFET
• In addition to MOSCAP, MOSFET consist of Two n+
diffused region called source and drain.
• Space between source and drain is Channel
In MOSFET Parameter we need to consider are
• Channel length L
• Channel width Z
• Oxide thickness tox
• Doping Concentration NA
P Channel MOSFET
MOSFET Operation
• The terminal voltages are referred w.r.t source
• Model equations will be developed w.r.t VDS, VGS, VSB
• For normal operation VDS, VGS, are positive and VBS is
negative are zero
• Consists of Two PN junctions connected back to back
• The inversion layer is formed when VGS > Vth
• VGS < Vth no conducting path accumulation and depletion
• In accumulation condition leakage current exist
• In depletion mode some amount of current will flow due to
concentration gradient this is called sub threshold current
• when VGS > Vth and positive VDS is applied drift current flows
from source to drain
• Inversion layer behaves as resistance
• Current voltage characteristics is shown in next slide
MOSFET Operation
• VDS = VDSsat pinch off condition occurs
• VDS < VDSsat MOSFET is in linear region
• VDS >VDSsat MOSFET is in Saturation region and pinch off point
move towards the source
• Different values of VGS >Vth
Threshold voltage of MOSFET
• In MOSFET the threshold voltages are measured w.r.t source not
w.r.t to bulk as in MOSCAP
• The threshold voltage is defined as value of VGS required to produce
inversion layer when VDS = 0
• As VBS negative source and drain junctions are reverse biased and
there is no flow of substrate current
• The fermi level split into two electron and hole quasi fermi level.
• In MOSFET considering PN junction at source and drain
• There is continuous variation in Efn in source to drain end of channel
when VDS not equal to zero
MOSFET Operation
• Threshold voltage is define for VDS = 0,
therefore
MOSFET Operation
• On the onset of strong inversion
• At Threshold
• For VBS < 0, Drop in semiconductor is greater than MOS capacitor
MOSFET Operation
• At Qn is negligible at threshold Qs= QB
• VGS =VGB+VBS
• Change in threshold voltage
• Body effect parameter
IV characteristics of MOSFET above
Threshold
• To derive the current expression following Assumption are made
• There are no interface states
• Drift current component is much higher
• Carrier mobility is constant in the channel
• Transverse electric field is much larger than longitudinal electric
field this condition is called GCA
• It is difficult to obtain the simple and accurate expression for current
as Qn is not constant in the channel, it vary from point to point
• Behaves like number of MOS capacitor in series
• There are several analytical model to derive the expression for
current
• In our syllabus - SPICE level 1,2,3 are included
Bulk Charge Model Level 2
• Linear Region : First consider the linear region
• VCB (y) - Channel voltage with respect to bulk at
distance Y from Source
• VCB (y) = - VBS at Source
• VCB (y) = VDS - VBS at Drain
• Efn(y)= Ef- q VCB (y) continuously varies
• To compute the drain current magnitude , it is necessary
to determine electron charge in the channel
Band diagram
Bulk Charge Model Level 2
Bulk Charge Model Level 2
• VCB (y) is the function of position along the channel
• As we move from source to drain VCB (y) will increase and ψs
will also increase. Ψs more towards drain. As Gate voltage is
fixed ψox is less when we move from source to drain.
• Magnitude of Qs = Cox ψox this will be less near drain
• As Ψs more near drain, width of the depletion region will be
more near drain and Magnitude of bulk charge density QB will
be more
• Qn = Qs - QB electron concentration will decrease towards
drain
Bulk Charge Model Level 2
• This charge density is used to derive the drain current. It is
purely drift current density
• To find In (y) Integrating Jn (y)and then multiplying with width
z
Bulk Charge Model Level 2
Bulk Charge Model Level 2
• In deriving the equation it was assumed that the channel is
pinned at 2 φB + VCB . In reality this is the point where the
MOSFET enter into strong inversion. If electron charge in the
channel is substantial ψs must be greater than this value. But it
is true that ψs must never be greater than 2φB + VCB. Bulk
charge model consistently under estimates Ψs.
• As Ψs is under estimated, therefore bulk charge density QB will
also be under estimated. On the other hand Ψox and Qn = Qs -
QB electron concentration will be over estimated. As the result
drain current is over estimated and 10% error will be involved
Bulk Charge Model Level 2
In saturation Region
• In the analysis it has been assumed that an inversion layer exist
all the way from source to drain this is true for small VDS
• As we move from source to drain VCB
• (y) will increase and ψs will also increase. Ψs more towards
drain. As Gate voltage is fixed ψox is less when we move from
source to drain. Magnitude of Qs this will be less near drain Qn
= Qs - QB electron concentration will decrease towards drain.
At some particular value of VDS = VDS(sat) Qn becomes zero .
At this point the channel is said to be pinched off.
• VCB (y = VDS(sat) - VBS
Bulk Charge Model Level 2
• In order to resolve whether plus sign or minus sign to be included
we know VGB – VFB = ψox + ψs and the voltage drop at the
semiconductor surface is at the drain end is VDS(sat) + 2φB – VBS
• We can conclude that
• When VDS > VDS(sat) pinch off point move towards the source.
Square law model Level 1
• Bulk charge model is complex in manual calculation and when
it is used in slow in SPICE simulation
• 2φB – VBS >> VDS
Square law model Level 1
• Square law model can also be derived all
along the channel depletion width is constant
Square law model Level 1
• mmnIn deriving the equation
• Square law model consistently over estimates drain current. But the
assumption used here is Depletion width same from source to drain
point. Therefore bulk charge density QB will also be under
estimated. On the other hand Qn = Qs - QB electron concentration
will be over estimated. As the result drain current is over estimated
and 20%-30% error will be involved
SPICE Level 3
• Square law model is simple but inaccurate
• Spice level 3 is simple and accurate
• Consider channel voltage with respect to source
VCS (y) = VCB (y) + VBS
• Approximation used is
SPICE Level 3
SPICE Level 3
VCS (y) = VCB (y) + VBS and VBS is constant
Drain current in the linear region
Drain current in the saturation region is obtained by substituting Qn = 0
SPICE Level 3
• Spice level 3 had lower value of VDSat and IDSat
and more accurate
• Comparison of Models
Level 1- Simple but inaccurate
Level 2- Complex and inaccurate
Level 3- Simple and accurate
Problem
