Q.

In a p-n junction diode at equilibrium, which one of the following

statements is NOT TRUE?
(a) The hole and electron diffusion current components are in the
same direction
(b) The hole and electron drift current components are in the same
direction
(c) On an average, holes and electrons drift in opposite direction
(d) On an average, electrons drift and diffuse in the same direction
Q. Consider an abrupt p-n junction (at T = 300 K) shown in the figure.
The depletion region width Xn on the N-side of the junction is 0.2
m and the permittivity of silicon sat) is 1.044  1012 I/cm. At the
junction, the approximate value of the peak electric field (in kV/cm)
is ______

P-region N-region
Xn
NA ND 10th/cm2

Single sided P.N June

Q. Consider a silicon p-n junction with a uniform acceptor doping
concentration of 1017 cm-3 on the p-side and a uniform donor
doping concentration of 1016 cm3 on the n-side. No external
voltage is applied to the diode.
Given: kT/q = 26 mV, ni = 1.5  1010 cm3, si = 12 0, 0 = 8.85 
1014 F/cm, and q = 1.6  10 19 C.
The charge per unit junction area (nC cm2) in the depletion region
on the p-side is _______.
Q. Consider a region of silicon diode of electrons and holes, with an
ionized donor density of Nd= 1017 cm 3. The electric field at x = 0 is
0V/cm and the electric field at x = L is 50 kV/cm in the positive x
direction. Assume that the electric field is zero in the y and z
directions at all points.

Nd+ = 1017 cm 3

X=0 X=L
Given q = 1.6  10 19 coulomb, 0 = 8.85  1014 F/cm, r = 11.7 for
silicon, the value of L in nm is
Q. An abrupt pn junction (located at x = 0) is uniformly doped on both
p and n sides. The width of the depletion region is W and the
electric field variation in the x-direction is E(x). Which of the
following figures represents the electric field profile near the pn
junction.
 E(x) (b)
(a)

n-sides n-sides
N-sides P-sides

x
W

E(x)
(c) P-sides
n-sides W (d)
E(x)
x
n-sides W P-sides
x
(0, 0)
p- side n- side
Q. A junction is made between p Si with doping density NA1 = 1015
cm3 and p Si with doping density NA2 = 1017 cm3
Given: Boltzmann constant k = 1.38  10-23 JK1 , electronic
charge q = 1.6  1019 C. Assume 100% acceptor ionization.
At room temperature (T = 300 K), the magnitude of the built-in
potential (in volts, correct to two decimal places) across this
junction will be _____.
Q. A silicon P-N junction is shown in the figure. The doping in the P
region is 5  1016 cm3 and doping in the N region is 10  1016
cm3. The parameters given are
Bulit-in voltage (bi) = 0.8V
Electron charge (q) = 1.6  1019 C
Vaccum permittivity (0) = 8.85  1012 F/m
Relative permittivity of silicon (si) = 12

P N

1.2m 0.2m

The magnitude of reverse bias voltage that would completely

deplete one of the two regions (P or N) prior to the other (rounded
off to one decimal place) is ____ V
Q. Figures I and II show two MOS capacitors of unit area. The
capacitor in Figure I has insulator materials X (of thickness t1 = 1
nm and dielectric constant 1 = 4) and Y (of thickness t2 = 3) nm
and dielectric constant 2 = 20). The capacitor in Figure II has only
insulator material X of thickness teq. If the capacitors are of equal
capacitance, then the value of teq (in mm) is _________.

Metal Metal

t2 2 teq 2
t1 1

Si Si

Figure I Figure II
Q. A voltage VG is applied across a MOS capacitor with metal gate
and p-type silicon substrate at T = 300 K. The inversion carrier
density (in number of carriers per unit area) for VG = 0.8V is 2  1011
cm2, For VG = 1.3 V, the inversion carrier density is 4  1011 cm2.
What is the value of the inversion carrier density for VG = 1.8 V?
(a) 4.5  1011 cm2
(b) 6.0  1011 cm2
(c) 7.2  1011 cm2
(d) 8.4  1011 cm2
Q. In a MOS capacitor with an oxide layer thickness of 10 nm, the
maximum depletion layer thickness is 100 nm. The permittivities of
the semiconductor and the oxide layer are s and ox respectively.
Assuming s/ ox = 3, the ratio of the maximum capacitance to the
minimum capacitor is _________
Q. An ideal MOS capacitor has boron doping concentration of 1015
cm3 in the substrate. When a gate voltage is applied, a depletion
region of width 0.5 m is formed with a surface (channel) potential
of 0.2V. Given that 0 = 8.854  1014 F/cm and the relative
permittivities of silicon and silicon dioxide are 12 and 4,
respectively, the peak electric field (in V/m) in the oxide region is
Q. If NA = 1016/cm3, then for MOS structure, if semi conductor is of p-
type, then find maximum space charge density?
(a) 2.19  10-4 c/cm2
(b) 1.6  107 c/cm2
(c) 4  103 c/cm2
(d) 4.8  108 c/cm2
Q. An Ideal MOS diode is fabricated on a P-type substrate having a
doping concentration NA= 1016/cm3. If gate oxide thickness
tox = 1000 , calculate the maximum depletion width?
Q. An Ideal MOS capacitor has boron doping of 1015/cm3 in the
substrate. When a gate voltage is applied, a depletion region of
width 0.5 m is formed with a surfaces potential of 0.2V. If r for Si
& SiO2 are 12 & 4 respectively, then find peak electric field in the
oxide region is _______ V/m?
Q. An Ideal MOS diode is fabricated on a p-type Si substrate having a
doping concentration NA = 1016/cm3. What is the work function of
silicon substrate at T = 300oK, Given EG = 1.1eV,  = 4.05 V,
operating temperature is at 300oK ________ volts?
Q. Consider MOS structure, NA = 6  1015/cm3, for Aluminium SiO2
junction, m = 3.2 ov & for Si  SiO2 junction  = 3.25 V, EG = 1.1eV,
if GATE is aluminium, then ms [Metal –semiconductor work
function different for the MOS structure is : ____ volt?
Q. If EG = 1.1eV & NC = NV for a semiconductor. Where it is doped with
1015/cm3 donars, where donar lenth is 0.2 eV below EC, where EF is
0.25 eV below EC @ 300o then find value of effective density states
NC.
(a) 1.97  1018/cm3
(b) 1.359  1019/cm3
(c) 4.82  1018/cm3
(d) 2.85  1019/cm3
Q. If a semiconductor is in thermal equilibrium, where ND (x) =
over the range 0  x  1/, where . Then find the
potential difference between x = 0 & x = 1/ will be