PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

UNIT – 9 Chapter – 14 Semiconductors

Q.01 What is Semiconductor?
Ans. Semiconductor is a material whose conductivity lies between
conductor and Insulator. At o kelvin they do not have free electrons
but at room temperature free electrons are generated in it .
Q.02 What is energy band? Write down its type.
Ans. In a crystal of a substance, there are many atoms very close to each
other that have energy levels. The energy levels are so close that they
form a band of it, this band is called energy band.
Energy bands are of two types :
(1) Valence band (2) Conduction band
Q.03 Define valence band.
Ans. The range of energy level which have valence electrons is called
valence band. This band can not be completely empty.
Q.04 Define conduction band.
Ans. The range of energy possessed by conduction electrons is called
conduction band. This band may be completely empty or partially
filled with electron.
Q.05 Define Forbidden energy gap.
Ans. The energy gap between valence band and conduction band is called
Forbidden energy gap. It is represented by Eg
Q.06 What is meant by doping?
Ans. Doping is the process of mixing impurity (Penta valent or trivalent)
atom to pure semiconductor. It increases the conductivity of
semiconductor. The impurity atom is called dopant.
Q.07 Define Depletion layer and potential barrier.
Ans. Depletion layer :- The layer of uncovered charge developed on either
side of junction in which the uncovered charges are immobile and no
charge carriers, is called depletion layer.
Potential barrier :- Due to uncovered charge on either side of
junction, A potential difference is developed across the junction
whose polarity is such as to oppose further flow of majority charge
carriers. This potential difference is called potential barrier.
1
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Q.08 Draw energy Band diagram for conductor, semi-conductor,

insulator.
Ans.

Q.09 Explain Intrinsic and Extrinsic semiconductors.

Ans. Intrinsic semiconductor :- The pure semiconductor is called
intrinsic semiconductors. Silicon and germanium are example of
Intrinsic semiconductor. These are element of 4th group in periodic
table. Thus these atoms have 4 electrons in their outermost orbit.
These are called valence electrons.
Intrinsic semiconductors are insulator at low temperature and
becomes conductor at high temperature. The conductivity of pure
semiconductor increases with temperature. In intrinsic
semiconductor number of free electron is equal to number of holes.
Extrinsic semiconductor :- The semiconductors having impurity are
called Extrinsic semiconductor. When a small amount of impurity is
added in pure semiconductor then its conductivity increases. The
process of mixing impurity in semiconductors is called Doping and
impurity atoms are called dopant.
The amount and type of impurity to be added can be controlled
as per desire during the preparation of Extrinsic semiconductors
penta valent impurities are added to make n type semiconductors.
Trivalent impurities are added to make P type semiconductors. In
extrinsic semiconductor free electron density and hole density is not
same Extrinsic semiconductors are electrically neutral.
2
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Q.10 Explain P type and n type semiconductors.

Ans. N – type semiconductor :- If pentavalent impurity atom such as
phosphorous is added to pure silicon crystal then crystal so obtained
is called N type semiconductors.
Out of five valence electron of phosphorous atom, four electrons
forms bond with four silicon atom and fifth electron becomes free
which acts as charge carrier. The crystal is called N type
semiconductor because the conductivity increases due to negative
charge. The pentavalent impurity atom is called Donor since its
donates free electron to the semiconductor.
In N type semiconductor, electrons are majority charge carrier
and holes are minority charge carrier.

N type semiconductor Crystal P type semiconductor Crystal

P type semiconductor :- If trivalent impurity atom such Aluminium
is mixed with pure silicon crystal then crystal so obtained is called P
type semiconductor. The three valence electrons of Aluminium atom
form Co-valent bond with three valence electrons of silicon atom and
there remains a lack of one electron for covalent bond. This lack of
one electronis called hole. This hole soon captures an electron from
its neighbouring silicon atom and a hole is created in this
neighbouring silicon atom. Thus, a hole moves from one place to
another inside the crystal. Holes are responsible for increasing
conductivity in P type semiconductors.
In P type semiconductors impurity atom is called acceptor. Holes are
majority charge carrier and electrons are minority charge carrier.

3
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Q.11 Write difference between Intrinsic and Extrinsic semiconductors.

Ans.
S.no Intrinsic Semiconductor Extrinsic Semiconductor
1. It is pure semiconducting It is prepared by doping small
material, no impurity are amount of impurity atom to
added to it. pure semiconductor.
2. Its electrical conductivity is Its electrical conductivity is
low. high.
3. Its electrical conductivity Its electrical conductivity
depends only on depends on both doping and
temperature. temperature.
4. It has equal number of free Number of free electrons and
electrons and holes. holes are not equal.
5. There is no permitted energy There is permitted energy state
state between valence band between valence band and
and conduction band. conduction band.
6. The electrical conductance is the flow of current is due to
due to breaking of covalent motion of electrons while in P
band. type flow is due to motion of
holes.
Q.12 Write difference between N type and P type semiconductors.
Ans.
S.no N type semiconductor P type Semiconductor
1. It is prepared by adding It is prepared by adding
pentavalent impurities in trivalent impurities in pure
pure semiconductor. semi conductors.
2. In N type, impurity atom is In P type, impurity atom is
called donor. called acceptor.
3. The electrons are majority Holes are majority charge
charge carrier. carrier.

4
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

4. The donor impurity level lies The acceptor impurity level lies
just below conduction band. just above valence band.
5. The electron density is much Hole density is much greater
greater than hole density than electron density. (𝑛ℎ ≫
(𝑛𝑒 ≫ 𝑛ℎ ) . 𝑛𝑒 ).
6. The fermi level is towards The Fermi level is towards
conduction band. valence band.
Q.13 Explain PN junction diode with formation of depletion layer and
Barrier potential.
Ans. If a junction is prepared by joining P type and N type crystal on
melting their one surface each by some specific method such that
width of junction is of order of 10−13 meter. It is called PN junction. It
has two terminals so it is also called PN junction diode.
Working or Formation of depletion layer :- When PN junction
diode is made, the holes from P type crystal and electron from N type
crystal start to combine with each other. When holes combine with
electron they neutralise each other. As a result a thin layer is formed
at the junction. This layer does not have any free charge but contains
immobile ion only and is called depletion layer.
After the formation of depletion layer an electric field is produced at
the junction from N region to P region which is called barrier electric
field. Barrier electric field stops the further diffusion of charges from
both region. Due to barrier electric field a voltage is produced across
the junction which is called barrier voltage or barrier potential.

5
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Q.14 Explain the working of PN junction Diode in forward Bias.

Ans. When PN junction diode is connected with a battery such that its P
region is connected with positive terminal and N region is connected
with negative terminal of battery then connection of diode is called
forward biasing.
In forward Biasing width of depletion layer decreases when
potential difference applied becomes greater than barrier potential.
The holes and electrons are combined at junction as a result current
flows through the junction.

For each electron hole combination, a covalent bond near the positive
terminal of battery will be broken and liberated electron enters the
positive terminal of battery. This action creates new hole which
moves towards the PN junction due to apply emf. At the other end
electrons from N region moves towards the junction. Current in P
region is due to movement of holes and in N region is due to
movement of electrons. Current in the external circuit is due to the
motion of electrons.
Now these electrons combine with hole coming from P region and
current flows through the junction which is called forward current.
This current is of order of Miliampere.
voltage current characteristics curve in forward biasing.
When forward voltage increases then initially diode current increase
slowly till the barrier voltage is reached then further increase in
voltage, increases current rapidly. The voltage at which current start
increasing rapidly is called knee voltage.

6
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Q.15 Explain the working of PN junction diode in reverse bias.

Ans. When P region of diode is connected to the negative terminal and N
region is connected to the positive terminal of the battery then diode
is said to be reverse bias. In reverse biasing the width of depletion
layer increases.

When PN junction diode is reversed based then holes from P region

are attracted by negative terminal and electrons from N region are
attracted by positive terminal a result they move away from the
junction. The reversed biased voltage supports the potential barrier
as the electrons and holes moves away from the junction so
conduction current does not take place across the junction. On
applying the large reverse voltage the minority charge carrier electron
in P region and holes in N region get repelled from the terminals of
battery and combine together at the junction as a result this current
flows due to minority charge carrier and it is of order of microampere.
voltage current characteristics in reverse bias.
When reverse voltage is applied then initially diode current is
independent of applied voltage. At large reverse voltage the
breakdown occurs at a point and current increases abruptly.

7
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Q.16 What is rectifier. Explain PN junction diode as half wave

rectifier.
Ans. Rectifier is a device that is used to convert Alternating current or
voltage into Direct current or voltage.
Principle :- Its working is based on the principle that resistance of
PN junction becomes low when connected in forward bias and it
becomes high when connected in reverse biased.
HALF WAVE RECTIFIER :- A.c. voltage to be rectified is connected to
the primary winding 𝑃1 𝑃2 of a stepdown transformer. 𝑆1 𝑆2 is the
secondary coil of the transformer. 𝑆1 is connected to the portion P of
the p – n junction. 𝑆2 is connected to the portion N through load
resistance R. Output is taken across the Load resistance R.

Working :- During positive half cycle of A.C. suppose 𝑆1 becomes

positive, 𝑆2 becomes negative and the P-N junction is forward biased.
The resistance of pn junction becomes low. The maximum forward
current flows in the circuit and we get output across load.
During negative half cycle of A.C. 𝑠1 becomes negative and 𝑠2 is
positive. The p-n junction is reverse biased. It offers high resistance
and hence there is no flow of current and thus we do not get output
across load.
Hence in the output, we have current corresponding to one half
cycle of the wave and the other half is missing. That is why process is
called half wave rectification.
Q.17 Explain PN junction diode as Full wave Rectifier.
Ans. Rectifier is a device that is used to convert Alternating current or
voltage into Direct current or voltage.
8
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Principle :- Its working is based on the principle that resistance of

PN junction becomes low when connected in forward bias and it
becomes high when connected in reverse biased.
FULL WAVE RECTIFIER :- For full wave rectification, we have to use
two p-n junction diodes 𝐷1 and 𝐷2 . The circuit is shown in the given
figure.

WORKING :- During the positive half cycle of A.C. let diode 𝐷1 is

forward biased and the diode 𝐷2 is reverse biased. The forward
current flows through diode 𝐷1 in load resistance R in the direction
as shown in figure.
During the negative half cycle of A.C. diode 𝐷2 is forward biased and
diode 𝐷1 is reverse biased thus forward current flows through diode
𝐷2 . We observe that during both the half cycles of A.C., current
through R flows in the same direction.
Hence the output signal voltage is unidirectional having ripple
contents (i.e. d.c. components and a.c. components of voltage). It can
be converted into d.c. voltage by filtering through a filter circuit.
Q.18 Explain the working of filter circuit.
Ans. FILTER Circuit :- A capacitor of high capacitance connected across
the output of rectifier can work as the filter.
The capacitor offers low impedance to a.c. component and offers
infinite impedance to d.c.
Due to it, the a.c. component is by passed or filtered out. It produces
a voltage drop across Load resistance 𝑅𝐿 as a filtered d.c. output,
which is almost d.c. voltage. Such filter is widely used in power
supplies.

9
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Q.19 Explain Photodiode with at working and uses.

Ans. Photodiode is an optoelectronic device in which current carriers
(electrons and holes) are generated by photons through photo
excitation.
In photodiode a transparent window is made to allow the light of
suitable frequency to fall on it. It is operated under reverse bias. The
conductivity of p-n junction photodiode increases with the increase in
intensity of light falling on it.

WORKING :- When a light of energy greater than forbidden energy

gap (ℎ𝑣 > 𝐸𝑔 ) is incident on a reverse biased p-n junction photodiode,
an additional electron hole pairs are created in the deplection layer.
These charge carriers flow across the junction and generate a reverse
current across the junction.
It is found that the reverse saturation current through the
photodiode varies almost linearly with the light intensity.
When the photodiode is reverse biased, then a certain current exists
in the circuit even when no light is incident on the p-n junction of
photodiode. This current is called dark current.
Uses of Photodiodes :-
(i) In photo detection for optical signals.
(ii) In demodulation for optical signals.
(iii) In switching the light on and off.
(iv) In reading of computers, punched cards and tapes.
Q.20 Explain Light Emitting Diode with at working and uses.
Ans. LED is a photo electronic device which converts electrical energy into
light energy. It is a heavily doped p-n junction diode which emits
spontaneous radiation (light) under forward bias.
10
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

In an LED the upper layer of p – type semiconductor is deposited by

diffusion on n- type layer of semiconductor. The metallised contacts
are provided for applying the forward bias voltage to the p-n junction
diode from battery through a resistance (R) which controls the
brightness of light emitted.
WORKING :- When p-n junction is forward biased, the movement of
majority charge carriers take place across the junction. The electrons
move from n – side to p-side through the junction and holes move
from p- side to n- side through the junction. As a result of it, the
concentration of minority carries increases rapidly at the junction
boundary.
These minority carriers recombine with majority carriers near the
junction. On recombination of electron and hole the energy is given
out in the form of heat and light. In p-n junction diodes made of
materials like gallium arsenide (GaAs), gallium phosphide. A greater
percentage of energy released during the recombination is in the form
of visible light.
Uses of LED
(1) LED is used in T.V. remote.
(2) LED is used in Digital watches.
(3) LED is used in burglar alarm system.
Q.21 Explain solar cell with at working and uses.
Ans. A solar cell converts solar energy into electrical energy. It is also a p-
n- junction diode.

11
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

Construction :- A solar cell consists of a silicon or gallium arsenide

p-n junction diode packed in a case with glass window on top. The
upper layer is of p-type semiconductor. It is very thin so that the
incident light photons may easily reach the p-n junction.
On the top face of p-layer, the metal finger electrodes are
prepared in order to have enough spacing between the fingers for the
light to reach the p-n junction through p-layer.
WORKING :- When photons of light (of energy hv > Eg) fall at the
junction, electron – hole pairs are generated in the depletion layer.
The electrons and holes produced move in opposite direction due to
junction field. The photo generated electrons move towards n-side
and holes move towards p-side of p-n junction. They will be collected
at the two sides of the junction, giving rise to a photo voltage between
the top and bottom metal electrodes. When an external load is
connected across metal electrodes a photo current flows.
The V-I characteristics of a solar cell lying in fourth quadrant of
the coordinate axes. It is so because solar cell does not draw current
but supplies to the load. In graph point A represents open circuit
voltage and point B represents short circuit.
Uses :-
(i) Solar cells are used for charging storage batteries in day time,
which can supply the power during night.
(ii) Solar cells are used in satellites to operate the varies electrical
instrument kept inside the satellite.
(iii) Solar cells are used in calculators, watches etc.
(iv) Solar cells are used to power traffic signals.
Q.22 Write difference between conductor, insulator & semiconductor.
Ans.
S.No. Conductor Insulator Semiconductor
1. Electric Electric conduction At low temperature
conduction is is not possible ion there is no electric
possible in them them. conduction in them

12
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

, but at high
temperature
electric conduction
becomes possible in
them .
2. They have a very They do not have Free electrons are
large number of charge carrier. generated at high
charge carriers temperature.
known as free
electrons .
3. The resistance of The resistance of The resistance of
conductors insulators is semiconductors
increase with unaffected by the decreases with
increase in increase in increase in
temperature temperature , i.e. temperature , i.e.
coefficient of the temperature ,the temperature
resistance coefficient of coefficient of
coefficient of resistance is zero . resistance is
resistance is negative .
positive .
4. On adding
On adding On adding
impurities, their
impurities, the impurities, their
conductivity conductivity conductivity
decreases. remains increases.
unchanged.
5. They have a very They have a very They have
small resistivity. high resistivity. resistivity nearly
10−5 Ω𝑚 to 106 Ω𝑚.
6. The forbidden The forbidden The forbidden
energy gap energy gap between energy gap between
between the the conduction the conduction
13
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

conduction band band and valence band and valence

and valence band band is more than band is nearly 1 eV.
is nearly zero. 3 ev.
7. Examples – Examples – glass, Examples – silicon,
Cooper, Silver etc. rubber, wood, germanium etc.
plastic, diamond
etc.

Q.23 Explain the formation of energy bands in solids and on

its basis state the difference between conductors,
insulators and semiconductors.
Ans. We know that in an atom electrons revolve in definite orbit
around the nucleus. All the energy levels of electrons in an
atom are not possible. An atom has its discrete energy
states. The energy levels increase in the order of the increase
in the number of orbit ( n = 1 ,2, 3 ,......) The energy of all
the electrons for a given value of n is not same. There is a
slight difference in their energies on the basis of other
quantum numbers. These sub-shells are s, p, d and
frespectively [Fig. 9.2 (a)].
When two atoms approach each other, the nucleus of one
atom affects the motion of electrons of the other atom and
hence there is division of energy levels in them. Since both
the atoms form a system in this condition and according to
Pauli's exclusion principle, no two electrons acquire the
same energy states in a system. As the two atoms come
closer to each other the division of energy level in them
becomes more [Fig. 9.2 (b)]. When the distance between the
two atoms decreases, first of all there is division of the
energy levels related with the outermost shell and this
divison follows the internal levels.

14
PHYSICS CLASSES 2023-24 By- ABHISHEK SAHU SIR

In a crystal, since there are large number of atoms close to

each other hence the energy level of each atom splits into
sub-energy levels in number equal to the number of atoms
in the crystal. These energy levels are so close to each other
that they form an energy band. Thus, the group of a number
of energy levels very close to each other, is called an energy
band corresponding to each energy level, an energy band is
formed. The formation of band is towards higher energy
levels. There are such energy values also between two
continuous bands which cannot be achieved by any
electron. This is called forbidden energy gap [Fig. 9.3(b)]. The
width of

forbidden energy gap depends upon the nature of the solid.

The maximum energy band which contains valence
electrons, is called the valence band and the band above it is
called the conduction band. Forbidden energy gap may or
may not be present between valence and conduction bands.
This depends upon the nature of the solid and on this basis
solids are classified into three types.

15