- Slutet lor Pgrarn
witb
Tutegcto
dat c id
AyitaMetic celcelatis clasD
Coutrul
Taststor
fabricat
Ocircuis Swtatfor
fabraton
8olen Alge bra
* Tucoren of completevens A0I
Or
nve Not
De
clictc
brekclrw
PSMC
V=IR
IL
reititity
Meuk set
Copper
Gcotd Top'
DE T
-it e iucrease
Resistor Qeats
te voltcge ucrease oT cleerear ?
-fesituce
materqy
macle
Ce
Truistor s
plaua Proce
elemeutH
- Actiue
Frout -Enc proces
Tuterconnecti om
Back-End prv cess -
R= Rollt Tk) d fos Pterconnection ete
red regov.
is., i7 Sucp
aTouud
we eeo
*Cicit 8ruulatios wire e cell..
Lspce wit
’ GDS2 e specificati ons
sPICE simulation progT Cuu Mask
ckt bmphaui's PTL ’ DS2
tor Depositon Os Oxde
" Proceasea
*piode equatioui " Thernal Oxiolati ou
dipoirio)
" cVDC cueueica vopo
-)
tsaturatio o cunreut sSlaue
Ve ’ thermal oltage
"ALD ’ Atoneie layer Deposibiow OY
Newtoos Met.d cued wh we
w
Cnt accwrata Soltion
Monclag" Aepositio
CondctoY
+Proces es for OeposiHon
Puyicas Vapous dipoition
- break down yihiating
sputertn.
Liort4as is wjecl (ex.
Work u Toucescreen
Vicleo
Tyormation 3 x lo 3 K(05
Texe /Nunmbeu
4 20x o3 20
Image
= l·sx104 m
Convt Jkm
*Jrawcuc tlon
tu another
30 x|o
9ireg tti
2.1<8. :I39
Ss h-x bt 22 e CEO
t
’ hidden iles
pod wohing dvect
Increaue the cd new du.
Ampl'tte atfon ’ mkdiY ’ ncw ile
Stre ngth mtolir newdi'sectny
eontine Cont Jedit
Ampliud
Analog
Aiscrete
sampiing m mve
to Serves
Anoleg anatContinuoussignln timc
tha
( ) mk clir workshep-ynopys
Create new
and Continuos in Amplitude to chect
gcst-2e24-Zip
Amplitude bur cis rete is tim 4) scP-r Test case -
Amplification
stor+ng
>Filte
’convo itioo
Attenuation
’Arithmetícal oper atoy
Log'cas operatiovw
Modtatoo /oemoolulatou
Pesisors polysilcou Perii tor i
*
is wed ko cleporrtion
A t the wae
= Shect Resistauce
wed thiu
- (coust aut ) Hgh temp Sso c
e cbout
we cam Ceutrol wiclHlo) jorocess
To ucreaue R
poly
Oxide
Cau
of ths
The acdu cuntag 7t
wolol no
TaistoT
PesistoT re Offer thor mucl ox Capacitaute
eifuiou layo
avoicled bcoz we uunecasay Ruistor?
depierion koge the to
Octs
Que
- gitfus ior taye claut
capaci tor voltage clepen
Capacitov de4nin
Met
r U s tor
sets for thausrtors
Metau
Oxidk Metce
(0 MO M
Capacitoy
metalMS
* Qiferut Geomeutriea csccl to
mude Meta My
TUrstor Ccnd alo otle
Gate oxile
turn.
No eed t
Ps cued tor take ciais
taperoud geomcty uc Souice
Po oistributon and
ondung Ctet
crcding
Gur ox ole layer Parcmetri Yiecd
Gpaitor Fuuuctiol Yie ld = Ye
Parametre Yield Ye
LA
Ytota Ye.Yp
rl[
HE
* Yiud ’
"functiona Yild
NG ’ rood chips
N
-DA
N otal cips Retiability
-Redil
A1 Area
D ’ Detect
deucity
D = 0s m
Time Yrs.
Y- e-DA
O. 9 - 0 s A
-oSA - 0 4o
A =o. 2) cmt
’Jutioual Defect
¬fiiuy Patile fitee
e Zero ddefect uity woe4 - leus than
to0 de fects /cm
.MOSpailas
Cox
M
p-nre
Bamd Carrier ife time +ime it
Mnoritg
takes to reCom bine
less thc tho
- Lt s sOme s OT
that
* ONe the major esue isfun ction well
mos t Ok the Ics clont
oKides
becaue of the faet in t o
of tHu Or cap aeitor
there cue tve fons in the oxiole (aes
* t to (ett
then the curve Cc- u) fhifts
LFCV
yersiOni
-HECU
mbes
7sthbe
reason tor fcçlre
breckdown
macle
-4pe
Co
TDDB Tne dpeuduut clielectnc
breakdown
Charg' to breck olown
charqe whica has treveeled fun
S to o
Connect
Co ’ eple tiov take cy e of it uwe
To
copocito a cowt Crret SO urce
’ But stil it boe aks duwp ast
Sowme time
Vers
VDS
vetta
py ime t
S
’slope ir cue to
Charqeu n Oaide
J, ti It
It
tite
-tletro - We lower cloun tle petutie
t uo
electro kno ch o t the c°oms i0 fiow rom:
Teclucecl. t luee e
4he
wire,
wire Cnd
wire break
migre from tu SoUrce cucl
bicu by tlu Da
Cuct Collectec
VyVoltage y-circ tien
V’ hreshctc Voltug
of
chages
U,-ly).r
* for 83T
tox crcuie Saturtes
T aus conductchce
process
porawates becae
Jt is coUlec So for MosFE7
docicecl s fe gccturey The cu vice Scturctes
Cun net
auct chge
I WK (Vers-Vr -Vy) poly ox j
Vps
t r a s Concuectane
trsi s tor
Parauítc
desigo
parcmites
ISo tator
2
Taeuc
I
2
K|2 (Vos- V;)Vos- Vbs
Scuturctio
pinck Poly
egion
Vp Vs V
sTL
M ask 1
I k 2(Vos-V,)(vs-)-
K2( VosVr)2 (Vis v)'J
Kvcrs -Vo)) +
k(Vers
2
-V) M
Cuk-2
Tem
po
-V,)(t A Vos
STI
Channe Mocul ation
Parameter
wot cffect cugital botlei
S0 people louu
Mauk 4
injesodre, olrcis oud
Crete thtmscw6
tao extra
take
to7 On bol tr.
tron th
Scleu So thCt
Lt doe not
eengusere
Ccuwe Dautabu
prooblem o GDSS feometric
of Souic & Draun 11
shor ting cl to
shittiny
below tleis
ErroY
Fror clading
Antenna ce ou tlue clip
tself .
’It Is jnerally for the metal
tines S hold be
’Metal (ëne lengta
auorcug
MOu k-3
aote cowta
SourCe
Cott CouI aL
Gati oxtou is Vulner cuble o
Cant
Hoo to Ln duetor
. probleus tor maling Tncuctor
) It cennot 6e moye than IOo n H
more than t u a t
we aOwe tD Chip offset
2 parauitea hewe to be take Care
utile duigrng
