TS C-24- EC-206 Second Semester Diploma in ECE

ELECTRONIC DEVICES AND CIRCUITS

--I.RAVI KUMAR

Preface

The book on Electronic Devices and Circuits as been written strictly as per the latest syllabus
of Second Semester, Diploma in Electronics & Communication Engineering of Curriculum
C-24 of SBTE&T, Telangana.

The book is presented in a simple and lucid style covering each topic in depth. Review
questions are added at the end of each chapter.

I express my thanks to my beloved parents, teachers and my friends for their heartfelt blessings
and kind inspiration.

Finally, I express my sincere thanks to M/s. RADIANCE PUBLISHERS, Hyderabad for

publishing this book in a short span.

--I.Ravi Kumar
 UNIT - 1
TRANSISTOR BIASING

1.0 Introduction:
Biasing is a technique using which DC operating conditions are adjusted to operate the transistor in one
of the three regions of output characteristics.

Bipolar transistors must be properly biased to operate correctly. The bias circuit stabilizes the operating
point of the transistor for variations in transistor characteristics and operating temperature.

A bias network is selected to reduce the effects of device variability, temperature, and voltage changes.

A bias circuit may be composed of only resistors or may include elements such as
temperature-dependent resistors, diodes, or additional voltage sources, depending on the range of
operating conditions expected.

The proper flow of zero signal collector current and the maintenance of proper collector emitter voltage
during the passage of signal is known as transistor biasing. The circuit which provides transistor
biasing is called as biasing circuit.

1.1 State the need for proper biasing circuit in amplifier.

 Biasing is nothing but making use of resistors and power supply connected in such a way that to
obtain collector emitter voltage and collector current.

 The need of providing dc biasing for transistor is to obtain a dc collector current at a certain dc
collector emitter voltage.

 These values of current and voltage are expressed by the term called as operating point or
quiescent point.

1.2 List the types of biasing circuits.

The following are the common types of biasing circuits:
 Fixed bias
 Collector-to-base bias
 Emitter bias
 Voltage divider bias or potential divider

1.3 List the factors affecting the Q-point.

The point which is obtained from the values of the IC (collector current) or VCE (collector-emitter voltage)
when no signal is given to the input is known as the operating point or quiescent (silent) point or simply
Q-point in a transistor.

The factors affecting stability of the Q-point include:

 Temperature variations
 Power supply voltage fluctuations
 Changes in transistor parameters
 Signal variations at the input
 Load variations at the output
1.4 Explain thermal runaway.
 The thermal runaway takes place in a BJT.
 The self-destruction of an unstabilized transistor is known as thermal runaway.
 Thermal runway in BJT is a process of self-destruction of transistor because of overheating at
the collector junction due to an increase in Ic with Ico
 If temperature increases, then the reverse saturation current Ico increases, which results in an
increase in the collector current, i.e. Ic increases.
 Power dissipation at the collector junction increases in the form of heat which again raises the
temperature and the cycle continues.
 If the above cycle becomes repetitive then the collector junction gets overheated and thereby
thermal runway takes place.

Fig 1.1 Thermal Runaway Process

1.5 Define stabilization of operating point.

 When the temperature changes or the transistor is replaced the operating point also changes.
However for faithful amplification, the operating point must be remains fixed. This necessity to
make the operating point independent of these variations.

 The process of making operating point independent of temperature changes or variations in

transistor parameters is known as stabilization.

1.6 Derive an expression for stability factor in CE configuration.

The extent to which the collector current IC is stabilized with varying ICO is measured by a stability factor
S. It is defined as the rate of change of collector current IC with respect to the collector base leakage
current ICO, keeping both the current IB and the current gain β constant.
From this equation it is clear that this factor S should be as small as possible to have better thermal
stability.

The small value of stability factor indicates good bias stability whereas large value of stability factor
indicates poor bias stability. Ideal value of stability factor is S = 1.

1.7 Draw fixed bias circuit. Explain the fixed bias circuit.
In this method, a fixed value of resistor RB of high resistance is connected in base, as the name implies.
It is also called base resistor method. The required zero signal base current is provided by VCC which
flows through RB. The base emitter junction is forward biased, as base is positive with respect to emitter.

The required value of zero signal base current and hence the collector current (as IC = βIB) can be made
to flow by selecting the proper value of base resistor RB. Hence the value of RB is to be known.

The figure below shows how a base resistor method of biasing circuit looks like.

Fig 1.2 Fixed Bias Circuit

Let IC be the required zero signal collector current. Therefore,

 IB =ICβ

Considering the closed circuit from VCC, base, emitter and ground, while applying the Kirchhoff’s
voltage law, we get,
VCC = IBRB+VBE
Or
IBRB = VCC−VBE
Therefore
RB = VCC−VBEIB

Since VBE is generally quite small as compared to VCC, the former can be neglected with little error.
Then,
RB = VCCIB

We know that VCC is a fixed known quantity and IB is chosen at some suitable value. As RB can be found
directly, this method is called as fixed bias method.

Stability factor

In fixed-bias method of biasing, IB is independent of IC so that, dIB/ dIC = 0

Substituting the above value in the previous equation,

Stability factor, S = 1+β

Thus the stability factor in a fixed bias is (1+β) which means that IC changes (1+β) times as much as any
change in ICO.

Advantages:
 The circuit is simple.
 Only one resistor RE is required.
 Biasing conditions are set easily.
 No loading effect as no resistor is present at base-emitter junction.

Disadvantages:
 The stabilization is poor as heat development can’t be stopped.
 The stability factor is very high. So, there are strong chances of thermal run away.

1.8 Draw collector to base bias circuit. Explain the collector to base
resistor method of biasing.
The collector to base bias circuit is same as base bias circuit except that the base resistor RB is returned to
collector, rather than to VCC supply as shown in the figure below.
 Fig 1.3 Collector to Base Bias Circuit

This circuit helps in improving the stability considerably. If the value of IC increases, the voltage across
RL increases and hence the VCE also increases. This in turn reduces the base current IB. This action
somewhat compensates the original increase.

The required value of RB needed to give the zero signal collector current IC can be calculated as follows:

Voltage drop across RL will be

 This value is smaller than (1+β) which is obtained for fixed bias circuit. Thus there is an improvement in
the stability.

This circuit provides a negative feedback which reduces the gain of the amplifier. So the increased stability
of the collector to base bias circuit is obtained at the cost of AC voltage gain.

Advantages:
 The circuit is simple as it needs only one resistor.
 This circuit provides some stabilization, for lesser changes.

Disadvantages:
 The circuit doesn’t provide good stabilization.
 The circuit provides negative feedback.

1.9 Draw self bias circuit. Explain the self bias circuit.
The self bias, also called potential divider bias, voltage divider bias, universal bias or four resistor bias is
the most commonly used biasing arrangement. The arrangement of self bias circuit is shown in Fig 1.4.

The name voltage divider is derived due to the fact that the voltage divider is formed by the resistors R1
and R2 across VCC.

The emitter resistor RE provides stabilization. The resistor RE causes a voltage drop in a direction so as to
reverse bias the emitter junction.

The voltage drop across R2 forward biases the base-emitter junction. This causes the base current and
hence collector current flow in the zero signal conditions.
 Fig 1.5 Self Bias or Voltage Divider Bias Circuit

Suppose that the current flowing through resistance R1 is I1. As base current IB is very small, therefore, it
can be assumed with reasonable accuracy that current flowing through R2 is also I1.
Advantages:
 The collector IC in this circuit is almost independent of transistor parameters.
 It provides better stabilization.
  Flexibility in adjusting operating point.
 Moderate sensitivity to power supply changes.
 More than one type of voltage divider circuit can be incorporated by making use of this bias.

Disadvantage:
 The signals tend to get mixed while using this bias in the circuits.

1.10 Derive an expression for stability factor of the self bias circuit.

Review Questions
Part - A:
1. What is biasing?
2. List the types of biasing circuits.
3. Define Q-point.
4. List the factors affecting the Q-point.
5. Define stabilization of operating point.

Part – B:
1. State the need for proper biasing circuit in amplifier.
2. Explain thermal runaway.
3. Draw fixed bias circuit.
4. Draw collector to base bias circuit.
5. Draw self bias circuit.

Part - C:
1. Derive an expression for stability factor in CE configuration.
2. Explain the fixed bias circuit.
3. Explain the collector to base resistor method of biasing.
4. Explain the self bias circuit.
5. Derive an expression for stability factor of the self bias circuit.