Sentaurus TCAD Tutorial
Giyeong Kim
2023.02.24
index
• Introduction to semiconductor detector
• Summary of TCAD tool
• Design of PiN sensor
• Silicon sensor fabrication
• Hands on session
Introduction to semiconductor detectors
E-field
• Semiconductor detectors have good energy resolution, so
these detectors are widely used in high-energy collision
+_
experiments.
P +_ N
• When charged particles pass through the depletion region,
they create electron-hole pairs.
+_
• The created electron-hole pairs drifted in the electric field,
depletion P-N junction
thereby generating the signal. region
• To increase the depletion region, reverse bias voltage is
applied to the device.
Band gap
Using Bloch’s function
Density of state
~ free electron
one octant
Spin
Total state in k-space
Energy density of state
Intrinsic semiconductor
𝑛 𝐸 𝑑𝐸 = 𝑔 𝐸 𝑓 𝐸 𝑑𝐸 ,𝑔(𝐸) : density of state
𝑝(𝐸)𝑑𝐸 = 𝑔 𝐸 [1 − 𝑓 𝐸 ]𝑑𝐸 𝑓 𝐸 : Fermi-Dirac function
!!"!"
𝑛 𝐸 = 𝑁𝑐𝑒𝑥𝑝 #$
, 𝐸𝐹 : fermi energy
!#"!!
𝑝 𝐸 = 𝑁𝑣𝑒𝑥𝑝 Nc, Nv : effective density of state
#$
n=p => 𝑛𝑝 = 𝑛𝑖2 .from intrinsic semiconductor
Intrinsic semiconductor
Extrinsic semiconductor
Doping group 5 atoms Doping group 3 atoms
: P, Ar, Sb : B, Al, Ga, In
n-doping p-doping
The p-n junction
Intrinsic electric field structure of semiconductor due to
the diffusion of majority carrier at the junction
equilibrium Forward bias reverse bias
The p-n junction
𝑑2𝑉 𝜌 𝑑𝐸
= − = − Nd<<Na
𝑑𝑥2 𝜖 𝑑𝑥 2𝜖 𝑉𝑏𝑖 + 𝑉0 𝑁𝑎 + 𝑁𝑑 1/2
𝑊𝑠𝑐𝑟 = 𝑊𝑠𝑐𝑟 ≈ 0.53 𝜌𝑉0 , (µ𝑚)
Poisson e.q 𝑒 𝑁𝑎𝑁𝑑
Na<<Nd
𝑊𝑠𝑐𝑟 ≈ 0.32 𝜌𝑉0 , (µ𝑚)
The p-n junction
breakdown voltage
Zener breakdown : high doped
junction capacitance Avalanche breakdown : high electric field
𝜖𝐴
𝐶=
𝑊𝑠𝑐𝑟
Giyeong Kim. e-mail : [email protected] 11
Signal
n+p 다이오드 내부 전기장 : 0 58
𝐸=
01 2
− % 𝑥 = −
4
, 𝜏=
3 𝑄𝑛 = 2 𝑥0(1 − exp 5-6)
&
3 5&6 7
0 "8
전자의 속도 𝑄𝑝 = − 2 𝑥0(1 − exp 6
)
24
𝑣 = = −𝜇𝑛𝐸
28
𝑄𝑡𝑜𝑡 = 𝑄𝑛 + 𝑄𝑝 = −𝑒
전극에 유도되는 전하
9
𝑑𝑄 = 𝑑𝑥
2
ehp 한 쌍이 생겨났을 경우의 시그널
1
𝐽𝑑𝑟𝑓𝑡 ≈ 𝑒𝜇𝑝𝑁𝐴𝐸 = 𝜎𝐸 = 𝐸
𝜌
𝑑2𝑉 𝜌 𝑑𝐸
2 = − =−
𝑑𝑥 𝜖 𝑑𝑥
Poisson e.q
Signal
on average
𝐸𝑥𝜎𝑥 = 𝐸𝑖𝜎𝑖
𝜎𝑖 = 𝑁 𝑖 , 𝜎𝑥 = 𝑁 𝑥
energy conservation
𝐸0 = 𝐸𝑖 F 𝑁 𝑖 + 𝐸𝑥 F 𝑁 𝑥 !! !# ! !#
𝜎𝑖 = !" !!
− ! " 𝑁𝑖 , 𝑁𝑖 = "#
!
𝐸𝑖 F ∆𝑁𝑖 + 𝐸𝑥 F ∆𝑁𝑥 = 0
E0=const !! " #
𝜎𝑖 = 𝑁𝑖𝐹 , 𝐹 = ( − 1)
!" !"
: fano factor, 실리콘의 경우(300K) ~0.1
Ei : ionization energy
Ex : phonon excitation
TCAD(Technology Computer Aided Design) simulation
‣ TCAD simulators calculate the Poisson
equation of the semiconductor properties in
the numerical analysis method.
‣ TCAD simulators can visualize physical
characteristics of semiconductors, such as
electric field, potential, and current density.
Synopsys TCAD tool
‣ Electrostatic Potential
𝛻 " (𝜀𝛻𝜙 + 𝑃)= − 𝑞 𝑝 − 𝑛 + 𝑁D − 𝑁A − ρtrap
‣ Carrier transport model
!"($)
𝛻 " 𝐽n(p) = 𝑞(𝑅net,n(p) − 𝐺net,n(p))+q
!&
‣ Drift-diffusion model
𝐽n(p) = −𝑛(𝑝)𝜇n(p)𝛻Φn(p) by Einstein relation
𝜀 : electrical permittivity 𝑅net,n(p) : electron(hole) net recombination rate
𝑃⃗ : ferroelectric polarization 𝐺net,n(p) : electron(hole) net generation rate
n(p) : electron(hole) density 𝐽n(p) : electron(hole) current density
q : elementary charge Φn(p) : electron(hole) quasi_Fermi potential
𝜇n(p) : electron(hole) carrier mobility 𝑁D (𝑁𝐴 ) : concentration of ionized donors(acceptors)
Synopsys TCAD tool
Sentaurus process
• An advanced 1D, 2D, and 3D process simulator
• Equipped with a set of advanced process models,
which include default parameters calibrated with
data from equipment vendors
Sentaurus structure editor
• Tools for creating geometric structures for TCAD
simulation
• Direct CAD operations can be used to create 2D
and 3D structures
Sentaurus device
• An advanced multidimensional (1D/2D/3D) devic
e simulator
• Characterize electrical, thermal and optical behavi
or of semiconductor devices
Senstaurus tools
Synopsys TCAD tool
Sentaurus process
• An advanced 1D, 2D, and 3D process simulator
• Equipped with a set of advanced process models,
which include default parameters calibrated with
✓
data from equipment vendors
Sentaurus structure editor
• Tools for creating geometric structures for TCAD
simulation
• Direct CAD operations can be used to create 2D
✓
and 3D structures
Sentaurus device
• An advanced multidimensional (1D/2D/3D) devic
e simulator
• Characterize electrical, thermal and optical behavi
or of semiconductor devices
Senstaurus tools
SWB (Sentaurus WorkBench)
X-axis parameter
Each seat node
SDE & SDEVICE
Reverse engineering target chip
SIMS
TEM
Simulation setup
Half of cross section of 2 x 2 cm2 chip V0 , reverse bias voltage
1cm
Channel stop Guard ring Anode
Input parameter
Temperature 300K Doping density
Bias voltage 0 ~ -700V P-type 1x1019cm-3
Carrier lifeti electron 1x10-4s-1 N-type 5x1011cm-3
me hole 3x10-4s-1 N-type 1x1020cm-3
Cathode
Design of PiN sensor using TCAD simulation
Edge of silicon sensor
Leakage current result with the final design
‣ We calculated the leakage curre
nt of the final design based on th
e calibrated parameters.
Process flow co- ETRI
PR
SiO2 SiO2
SiO2 SiO2 SiO2
N-type silicon N-type silicon
N-type silicon N-type silicon N-type silicon
SiO2 SiO2 N+ N+
3. Backside Oxide strip 4. POCl3 Doping 5. Oxidation [900℃, 1000Å ]
1. Oxidation [900℃, 6000Å] 2. PR coating PR strip Deglase PSG
2000Å ~7000Å
PR PR PR
n+ n+ n+ n+ n+ n+
N-type silicon N-type silicon N-type silicon N-type silicon N-type silicon
N+ N+ N+ N+ N+
6. #Channel Stop Patterning 7. Oxide etch ~6000A 8. N+ implant [channel stop] 9. PR strip 10. Oxidation [900℃, 2000Å]
P31, 50KeV, 4.0E14/cm2
~7000Å
~7000Å
300Å 300Å
PR PR PR PR
n+ n+ n+ n+ n+ n+ n+ p+ p+ n+ n+ p+ p+ n+
N-type silicon N-type silicon N-type silicon N-type silicon N-type silicon
N+ N+ N+ N+ N+
11. #Active Patterning 12-1. Oxide etch (Dry + Wet) 13. Oxidation [850℃, 300Å] 14-1. #GRD Patterning 15-1. PR strip
12-2. PR strip 14-2. P+ implant [GRD] 15-2. Anneal (950℃, 60min)
B11, 180KeV, 1.0E14/cm2
23
~15000Å
10000Å 8000Å
PR PR
p+ p+ p+ n+ p+ n+
n+ n+ n+ p+ p+ n+ n+ p+ p+ n+ n+ p+ p+ n+ p+ p+
p+ p+
N-type silicon N-type silicon N-type silicon N-type silicon
N-type silicon
N+ N+ N+ N+ N+
16-1. Active Patterning 17. PR strip 18-1. TEOS 8,000A 19. #CONT Patterning 20. Oxide etch (Dry+Wet)
16-2. P+ implant [Active] 18-2. Anneal (950℃, 30min) Target: ~10000A (oxide on n+)
B11, 50KeV, 1.0E15/cm2
PR
n+ p+ n+ n+ p+ n+ n+ p+ n+ n+ p+ n+ n+ p+ n+
p+ p+ p+ p+ p+ p+ p+ p+ p+ p+
N-type silicon N-type silicon N-type silicon N-type silicon N-type silicon
N+ N+ N+ N+ N+
21. PR strip 22. metal deposit 23. PR coating 24. #GRD metal Patterning 25. metal etching
[10000Å]
PR PR PR
n+ p+ n+ n+ p+ n+ n+ p+ n+ n+ p+ n+ n+ p+ n+
p+ p+ p+ p+ p+ p+ p+ p+ p+ p+
N-type silicon N-type silicon N-type silicon N-type silicon N-type silicon
N+ N+ N+ N+ N+
26. PR strip 27. metal deposit[400Å] 28. PR coating 29. #ACT metal Pattering 30. metal etching
barrier metal split
24
PR
p+ PR
n+ p+ p+ n+ n+ p+ n+ n+ p+ n+
p+ p+ n+ p+ n+ n+ p+ n+ p+ p+
p+ p+ p+ p+
N-type silicon N-type silicon N-type silicon
N-type silicon N-type silicon
N+ N+ N+
N+ N+
31. PR strip 32. PR coating 33. oxide etching 34. PR strip 35-1. metal deposit [10000Å]
35-2. Alloy (420℃, 30min)
25
Photomask designed
Photomask layout of 8’’ wafer using AutoCAD tool
Align key for NNFC
Performance of fabricated chip
0.00E+00
-100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -5.00E-10
-1.00E-09
-1.50E-09
-2.00E-09
-2.50E-09
-3.00E-09
-3.50E-09
-4.00E-09
-4.50E-09
-5.00E-09
Hands on session
swb -> new project
->Save (경로 STDB)
Tools -> Add -> SDE
Boundary File 클릭 -> SDE 창이 뜨면 file -> Journal -> on 클릭(기록용)
Draw -> exact coordinate -> 사각형 클릭, 단위는 um,
silicon, aluminum등 선택
Contacts -> contact Sets -> electrode 만들기
-> select body에서 select edge로 바꾸고 none부분을 지정하고자 하는 이름으로 변경
Electrode 라인 클릭 후 Set contact 클릭
Doping concentration 정하기
Mesh 설정
완성된 구조 저장하기
Mesh -> Build Mesh
File -> Journal -> off
sdevice
