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Lecture 28 (03-04-24)

The document discusses the PN-Junction Diode, detailing its operation in forward and reverse bias modes, as well as its current-voltage characteristics. It compares silicon and germanium diodes, highlights the impact of temperature on diode behavior, and distinguishes between ideal and practical diodes. Additionally, it includes example problems related to diode circuits to illustrate practical applications.

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0% found this document useful (0 votes)
28 views15 pages

Lecture 28 (03-04-24)

The document discusses the PN-Junction Diode, detailing its operation in forward and reverse bias modes, as well as its current-voltage characteristics. It compares silicon and germanium diodes, highlights the impact of temperature on diode behavior, and distinguishes between ideal and practical diodes. Additionally, it includes example problems related to diode circuits to illustrate practical applications.

Uploaded by

darshanrajagoli2
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Electrical Sciences (EEE F111)

Lecture No – 28

PN-Junction Diode

Dr. Manish Gupta


EEE
PN-Junction Diode
• Schematic view of a pn-diode

(Va )
(Vn )
p-side n-side

If the metal (or ohmic) contacts to a pn-junction, the resulting


in a circuit element is known as pn-diode or junction diode

• Depending on the applied bias, pn-diode operates in two


modes
• Forward bias mode (Va > Vn)
• Reverse bias mode (Va < Vn)
BITS Pilani, K K Birla Goa Campus
PN-Junction Diode
Current-Voltage characteristics of a pn-diode

𝑉
i = Is (𝑒 ɳ𝑉𝑇 − 1)

V: Applied voltage , Is : Reverse saturation current


VT : Volt equivalent of temperature = kT/q = T/11600
k= Boltzmann constant, q = electronic charge, T = temperature in K
ɳ (eta): Emission coefficient ; for Si ɳ = 2 and for Ge ɳ = 1
BITS Pilani, K K Birla Goa Campus
Impact of Applied Voltage (Bias)
on Depletion Width
Forward Bias Mode (Va > Vn)

• Electric field across the depletion layer reduces, which


leads to flow of current in a diode.

• The current flows due to majority carriers

Reverse Bias Mode (Va < Vn)

• Electric field across the depletion layer increases,


which restricts the flow of the electrons (or current).

• The current flows due to minority carriers

BITS Pilani, K K Birla Goa Campus


Diodes : Si and Ge

Ge Si

Current-Voltage characteristics of Silicon (Si) and Germanium


(Ge) diode.

• VT,Ge < VT,Si


• IGe > Isi
• The higher current and lower built in voltage in Ge diode is
due to the lower bandgap of Ge material
BITS Pilani, K K Birla Goa Campus
Diode: Impact of Temperature
• In the forward-bias region
the characteristics of a
silicon diode shift to the left
at a rate of 2.5 mV per
centigrade degree increase
in temperature.

• In the reverse-bias region


the reverse current of a
silicon diode doubles for
every 10°C rise in
temperature.

BITS Pilani, K K Birla Goa Campus


Impact of Temperature

If Is (Ta) is the saturation current at temperature Ta, then the


saturation current at temperature Tb is evaluated using
above equation.
• The increase in current is due to the increase in electron-
hole pairs at higher temperature.

• By decreasing the voltage appropriately, it is possible to


compensate for increase in temperature

BITS Pilani, K K Birla Goa Campus


Ideal vs Practical Diodes
Diode as a switch

Forward Bias Reverse Bias

The semiconductor diode behaves similar like a mechanical


switch. It can control whether current will flow between its
two terminals.
BITS Pilani, K K Birla Goa Campus
Ideal vs Practical Diodes
Ideal diode

• During forward bias, the voltage across the diode is 0 V (Short circuit)

• During reverse bias, the current flows through the diode is 0 A (O


circuit)

BITS Pilani, K K Birla Goa Campus


Ideal vs Practical Diodes
Practical diode

• Practical diode offers finite resistance, when forward or


reverse biased.

• Significant current flows when the applied voltage > built in


voltage
BITS Pilani, K K Birla Goa Campus
Diode Circuits
1. Find VD, VR, and ID (assume Si
diode with Vbi = 0.7 V)

Answer:

2. Repeat the problem with reversed direction of diode


Answer: ID = 0 A, VD = 8 V, and VR = 0 V

BITS Pilani, K K Birla Goa Campus


Diode Circuits
3. For the given series connection, find
VD, VR, and ID

Answer: ID = 0 A, VD = 0.5 V, and VR = 0 V

4. For the given connection, find ID, VD2,


and Vo

Sol.:

BITS Pilani, K K Birla Goa Campus


Diode Circuits

If Vbi is assumed to be 0.7 V, VD2 = 20 - 0.7 V = 19.3 V

5. For the given connection, find I, V1 ,


V2, and Vo

Sol.:

BITS Pilani, K K Birla Goa Campus


Diode Circuits

6. For the given connection, find I1,


ID1, ID2, and Vo
Sol.:

BITS Pilani, K K Birla Goa Campus


Thank you

BITS Pilani, K K Birla Goa Campus

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