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PN Junction

The document outlines an experiment aimed at determining the reverse saturation current I0 and material constant η of a pn junction using specific apparatus and formulas. It includes a theoretical background on the current in a p-n junction, the procedure for conducting the experiment, and sample observations with calculations for the values of I0 and η. Additionally, it introduces a second experiment focused on determining the temperature coefficient of junction voltage and energy band gap.

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42 views4 pages

PN Junction

The document outlines an experiment aimed at determining the reverse saturation current I0 and material constant η of a pn junction using specific apparatus and formulas. It includes a theoretical background on the current in a p-n junction, the procedure for conducting the experiment, and sample observations with calculations for the values of I0 and η. Additionally, it introduces a second experiment focused on determining the temperature coefficient of junction voltage and energy band gap.

Uploaded by

fadil89692
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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EXPERIMENT

AIM
Determination of reverse saturation current I0 and material constant  of pn junction.

APPARATUS REQUIRED
1. Study of P-N Junction, PN-01 : One
2. Oven : One
3. Sample Set : One
(BC-109-Si ; IN-34-Ge ; IN5408-Diode : Mounted on Teflon Plugs)

FORMULA USED :

Material constant is given by:


q V

kT  ln I

The reverse saturation current is given by


VG 0
VT
I 0  kT e
m

And Energy Band gap

dV mkT
VG 0  V  T 
dT q

For notations please see the theory of both the experiments.

DIAGRAM :

Circuit Diagram of pn junction diode in reverse bias


THEORY
The current I in a p-n junction is given by
 qV 
I  I 0  e kT  1 (1)
 
 
Where,

q, electronic charge = 1.602 X 10-19 coulomb

 ,material constant = 1 for Ge

= 2 for Si
K, Boltzman constant=1.381 X 10-23 J/K
T, Temperature in Kelvin
V, Junction voltage n volts

The reverse saturation current is usually too small to be measured directly. An indirect graphical
qV
kT
method may be obtained by taking logarithm of eqn. (1) for e 1 as,
qV
ln I = ln I0 +
kT

If, V and In I are plotted on a graph paper a straight line is obtained. This line intersects
the current (In I) axis at In I0 and its slope may be solved to compute  ,
q V

kT  ln I

PROCEDURE
The diode to be tested is connected to the terminals with the polarity as indicated (already
connected). Readings are now recorded from the two display set to JUNCTION and CURRENT
respectively with the current source adjusted in steps from 100 µA to 10 mA.

OBSERVATIONS
Sample: BC 109 (Base – Emitter Junction)

Forward Current Junction Voltage


S.NO. ln I
I in µA V in Volts
1 100 4.61
2 200 5.30
3 400 5.99
4 700 6.55
5 1000 6.91
6 2000 7.60
7 4000 8.29
8 7000 8.85
9 10000 9.21

Graph 1 Reverse Saturation current


CALCULATIONS:
*Note: Values written here are just for your understanding. Actual readings may differ.

From graph no. 1, we get

ln I0 = -11.5

V 0.18
Slope of the curve 
 ln I 4.7

Therefore,

I0 =0.10 X 10-10 A

And,

q V 1.602  10 19  0.18


 
kT  ln I 1.381  10 23  305  4.7

 = 1.46

EXPERIMENT-II

AIM
Determination of Temperature Coefficient of Junction Voltage and Energy band - gap.

THEORY
The reverse saturation current is given by
VG 0

I 0  kT m e VT , and the diode forward current by

 VV  V
 
I  I 0 e  1  I 0e
T VT
 
 
V VG 0
VT
 kT e
m
, where for Si: m = 1.5,  = 2 and for Ge: m=2.0,  =1

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