Assignment
MAY 12, 2025
Homework 1
Introduction
This report details the simulation of volt-ampere characteristics for three types of diodes
using LTspice software: a fast recovery diode, a Schottky diode, and a Zener diode. The
simulations were performed to understand the behavior of these semiconductor components
under both forward and reverse bias conditions:
Part 1)
Figure 1: Schottky Diode
Figure 2: Zener Diode
Figure 3: Reverse Breakdown of Zener diode
Part 2)
Figure 4: Datasheet of Fast recovery diode
Figure 5: Schottky diode
Figure 6: Zener diode
1. Forward Characteristics Comparison:
Schottky diode (NSR20F30NXT5G) shows lowest forward voltage drop
Fast recovery diode (RF01VM2S) has higher forward drop (as expected)
Zener diode (1N750) shows standard silicon diode behaviour in forward bias
2. Reverse Characteristics Comparison:
Fast recovery diode designed for high reverse voltage capability
Schottky diode shows higher reverse leakage (trade-off for low VF)
Zener diode exhibits controlled breakdown at specified voltage
Conclusion
This exercise successfully demonstrated the different volt-ampere characteristics of three
specialized diode types using LTspice simulations. The RF01VM2S fast recovery diode
showed expected high-voltage capability, the NSR20F30NXT5G Schottky diode confirmed
its low forward voltage advantage, and the 1N750 Zener diode demonstrated precise
breakdown characteristics. While simulations matched datasheet specifications in most key
parameters, some discrepancies highlight the importance of considering real-world testing for
critical applications. The results provide valuable insight for selecting appropriate diodes
based on their electrical characteristics for various circuit applications.
PCB Design Course - Homework No. 3: Transistor Volt-Ampere
Characteristic Simulation
Introduction
This report details the simulation of input and output characteristics for both NPN and PNP
bipolar junction transistors (BJTs) using LTspice software. The aim is to understand the
fundamental behavior of these semiconductor components through characteristic curve
analysis and comparison with manufacturer datasheets.
Homework 3
Figure 7: NPN 2N222 transistor
Figure 8: PNP 2N4126
Figure 9: PNP 2N4126
Summary of Results
1. Input Characteristics:
Both transistors show typical silicon junction turn-on (~0.7V)
Exponential current-voltage relationship confirmed
PNP requires slightly higher voltage for same current
2. Output Characteristics:
Active region operation matches theoretical expectations
Current gain values within manufacturer's specified range
Early effect visible in both devices
3. Comparison to Datasheets:
Simulations match datasheet curves for normal operating ranges
Some high-voltage discrepancies due to simplified models
Temperature and high-current effects not fully captured
4. Key Observations:
Complementary nature of NPN/PNP pair confirmed
Simulation models provide good basic understanding
Real-world testing needed for precise parameter extraction
Figure 10: NPN 2N222
Figure 11: PNP 2N4126
Conclusion
This simulation exercise successfully demonstrated the input and output characteristics of
both NPN and PNP bipolar transistors. The 2N3904 and 2N3906 complementary pair showed
expected symmetrical behavior with minor practical differences. While LTspice simulations
provided good first-order approximations of transistor behavior, the results highlight that:
1. Basic simulations match datasheet specifications for normal operating conditions
2. Model limitations become apparent at voltage extremes
3. Complementary transistors show similar but inverted characteristics
4. Practical circuit design should consider datasheet specifications and real-world testing
