SLDD REPORT -Aniket Kumar

1. Lapping and Polishing

Definition of Lapping: An Accurate Surface Finishing Method

A specific machining method called lapping is used to improve parallelism, flatness, and
surface polish. To achieve a consistently smooth and level surface, this low-speed, low-
pressure method uses a slurry of abrasive particles in a liquid base (oil and water).

Workpiece
Slurry

Fig.13 Schematic diagram of processing of Lapping and Polishing

To manually polish substrates without using machines, the process begins with applying wax
to steel cylindrical chunks and heating them. Once the wax is molten, substrates made of GaAs
(Gallium Arsenide) are attached to the wax-coated steel chunks. The assembly is then allowed
to cool, enabling the substrates to firmly adhere to the chunks. This initial step is part of the
lapping process.
For polishing the substrates, hand-driven steel cylindrical chunks are used. The polishing is
performed by moving and rotating the chunks manually in a figure-eight pattern within a slurry.
The slurry is prepared using water or oil mixed with alumina (Al₂O₃) grains of varying sizes—
100-400 micrometres for hardening and 0.5 micrometres for fine polishing. This mechanical
stress, applied gently in the figure-eight motion, helps to smooth and refine the surface of the
substrates. Repeating this process multiple times results in polished substrates (Fig.13).
Once polishing is complete, the thickness of the substrates is measured using a dial gauge
thickness metre. Afterward, the steel chunks are reheated to release the polished substrates from
the wax. The substrates are then cleaned using a chemical process. First, they are placed in
trichloroethylene (TCE), a colour-less and volatile solvent widely used for degreasing. The
substrates are subsequently rinsed in deionized (D.I.) water, followed by a cleaning step in
acetone. Finally, the substrates are dried using a jet of dry nitrogen, completing the process.
Substrate Polishing –The last stage in the creation of semiconductor substrates is substrate
polishing, also known as Chemical Mechanical Planarization (CMP). In order to create a
smooth, flat, and flawless surface on the semiconductor substrate, this method uses both
chemical and mechanical forces. Subsequently, the polished substrates serve as substrates for
semiconductor devices, which are essential parts of a variety of electronic gadgets, including
solar panels and cellphones. We used hand driven chunks for polishing the substrates by
moving and rotating hand with chunks making 8 shape (Fig.14). By repeating 8 shape multiple
times we get polished substrate easily.
Importance – It is impossible to exaggerate the importance of substrate polishing. This
procedure is essential for the following main reasons: Flatness: The photolithography processes
in the production of semiconductors depend on the substrate being flat. Any variation in flatness
may result in final product flaws. Smoothness of the Surface: Polishing brings surface
roughness down to an atomic level, usually reaching ~ 0.1 nm The subsequent deposition of
thin layers and the creation of complex semiconductor circuits depend on this flat surface.
Defect Removal: Surface impurities and flaws that can jeopardize the functionality and
dependability of semiconductor devices are eliminated during the polishing process. Control
of Thickness: Polishing aids in achieving the appropriate substrate thickness.

Fig.14 Schematic diagram of processing of Lapping and Polishing

Polished Substrate Applications- Polished substrates guarantee the dependability and
functionality of a variety of electronic products by attaining the required surface smoothness,
flatness, and defect-free qualities. The methods and materials employed in substrate polishing
will also change as technology develops, expanding the potential of semiconductor devices.
Thickness Measurement- After polishing, we measure thickness of polished substrate (Fig. 15).
We observed that after polishing we were getting thickness in 100-110 micro-metre. The
system we used to measure is the Gauge dial thickness metre (Fig.15).

Fig.15 Thickness Gauge

 2. Photolithography

Lithography refers to the general process of creating a pattern on a surface by transferring an

image from a master plate, while "photolithography" is a specific type of lithography where
the image transfer is achieved using light, typically ultraviolet light, to expose a photosensitive
material, creating the desired pattern on a substrate like a semiconductor substrate; essentially,
photolithography is a light-based method of lithography.

Fig.2 Illustration of Positive and Negative PR

In photolithography as shown in Fig. 2, the positive photoresist becomes soluble in the regions
exposed to UV light; the areas can then be removed when it is developed. Such photoresists
offer higher resolutions; they are suitable for fine patterns requiring high precision but
commonly tend to form thinner layers with moderate adhesion. Typical examples include
S1813 and AZ series resists. On the other hand, the negative photoresist polymerizes in
response to UV light exposure and the exposed regions are not soluble. Such shows excellent
adhesion and supports thick layers, hence employed in MEMS (micro electronics mechanical
system) and photonics, although the resolution is much less compared to the positive resists.
Some of the representatives include SU-8 and NR series.
Process Steps for Photolithography:
1. Apply S1813 Photoresist: Spin coat the S1813 photoresist at 3500 rpm for 30 seconds.
2. Bake Photoresist: Bake the substrate at 95°C for 1 minute to remove any residual solvent.
3. Photolithography Exposure: Use the Maskless Photolithography machine to expose the coated
substrate for 11 seconds.
4. Develop First Layer: Develop the exposed substrate in the developer solution M F -
C D - 2 6 for 50 seconds to remove the unexposed photoresist.
5. Bake After Development: Bake the developed substrate at 120°C for 1 minute to
stabilize the resist pattern.
6. Final Development: Perform a second development with the same developer for 1
minute to further clean and define the exposed pattern.
7. Optimize the developed sample using CCD camera.

1. Maskless photolithography - An optical microscope with a stereo-zoom and a digital

projector are used to create a straightforward and affordable maskless photolithography
system (see Fig. 4 and Fig.5). A highly divergent light from the projector is focused into a smaller
area of space using an optical microscope. Accurate pattern positioning, light focusing, and
substrate realignment with regard to incident light are all made possible by the microscope's
eyepiece. The patterns that will be exposed are created using PowerPoint software, and a
computer is used to directly manage the exposure's time and intensity. It has been found that
the exposure period (7 s) is constant for various structures with dimensions ranging from 20
to 8000 µm (Fig.6 and Fig.7), and a consistent development of photoresist material is achieved
throughout the exposure region. The maskless photolithography system was developed using a
combination of a high-resolution digital projector and a stereo-zoom optical microscope. The projector,
with a resolution of 1920×1080 pixels and a brightness of 3500 ANSI lumens, was optimized for
minimal light divergence by adjusting its f-number to 2.91. The optical microscope further focused this
light to achieve precise pattern projection.

Results:

Before etching

70° C 75° C 80°C

After etching

70° C 75° C 80°C