Assignment Engineering Physics
Assignment Engineering Physics
Ques 1. Equation of right circular cylinder with Ques 8. Moment of linear momentum vector about
axis z & radius r is the origin is known as
1. X2 + Y2 + Z2 = +r2
2. X2 + Y2 + Z2 = -r2 1. Vector Moment
3. X2 + Y2 = r2 2. Curl of a Moment
4. XY + Z2 = r2 3. Differential Moment
4. Angular Momentum
Ques 2. Which of the following is false regarding
gradient Ques 9. The necessary & sufficient condition for a
vector a(t) to have constant direction is given by
1. ∇. = 1. a .
(
>0
)
+
2. ∇. = + +
2. a X =0
)
(
3. ∇. = x + y + z 3.
)
=0
(
4. ∇. =
i +
j +
k 4. )
>0
Ques 3. A unit vector parallel to the resultant of Ques 10. The magnitude of work done by force F =
Â=2i+4j-5k and Ĉ=i+2j+3k is equal to yi + xj in displacing a particle from origin to ( i + j )
is given by
1. − − + 1. 0
2. 1
2. + + −
3. 2
3. + + − 4. 3
4. − − +
Ques 11. The necessary condition for a rotational
vector field V is given by
Ques 4. The sum of direction cosines of a straight 1. Curl V = 0
line is 2. Curl V ≠ 0
1. 0 3. Grad V = 0
2. 1 4. Grad V ≠ 0
3. ∞
4. None Ques 12. Which is false ?
1. a = 12i + 8j + 8k ms-2
2. a = 12i + 4j + 8k ms-2
3. a = 16i + 8j + 8k ms-2 10 0
A. . 31 B. . 31
4. a = 16i + 4j + 8k ms-2 1
0 0
C. . 31 D. . 31
1
Ques 14. The work done by F during a movement Ques 18. The potential energy of a system
dr equals the change in kinetic energy of the increases if work is done
particle. A small particle of mass m and its
restraining cord are spinning with an angular A. upon the system by a non-conservative
velocity ω on the horizontal surface of a smooth force
disk, shown in figure. As the force F is slightly B. by the system against a conservative force
relaxed, r increases and ω changes. The rate of C. by the system against a non-conservative
change of ω with respect to r is equal to, force
D. upon the system by a conservative force
4 4 4 4 3. 300 % 4. 400 %
A. =- B. =-
Ques 20. An example of non-conservative force is
4 4 4 4
C. =- D. =-
5
1. Frictional force
Ques 15. A small pendulum of mass m is 2. Gravitational force
suspended from a trolley which runs on a 3. Electrostatic force
horizontal rail. The trolley and pendulum are 4. Spring force
initially at rest with θ = 0. If the trolley is given a
constant acceleration a = g, and if the maximum Ques 21. Moment of linear momentum vector
angle through which the pendulum swings is 6/2. about the origin is known as
Find the tension T in the cord in terms of θ.
1. Vector Moment
2. Curl of a Moment
3. Differential Moment
4. Angular Momentum
A. T = mg (2Sinθ +2Cosθ - 2) A. 0 B. 1
B. T = mg (3Sinθ +3Cosθ - 2)
C. T = mg (4Sinθ +4Cosθ - 2) C. i + j + k D. −i − j − k
D. T = mg (6Sinθ +6Cosθ - 2)
Ques 23. The ratio of contact forces F1 and F2 in
Ques 16. In a damped harmonic oscillator the the figure below is
damping frequency is equal to
9 9 9 59
1. 8 2. 8 3. 8 4. 8
: : : :
Ques 17. Which of the following combination of A. B.
figure/s is an example of a damped harmonic
motion (DHM) 5
C. D.
5
(a) 0.25
(b) 0.50
(c) 1
(d) 3
(a) 1
(b) 2
(c) 3
(d) 4
(a) 1.5 V
(b) 2.5 V
(c) 3.5 V
(d) 4.5 V
Ques 61. An example of indirect band gap Ques 67. In a uniformly doped pn pn-junction, the
semiconductor is doping level of the n--side is four times the doping
(a) Gallium nitride (GaN) level of the p-side.
side. The ratio of the depletion layer
(b) Gallium arsenide (GaAs) width of n-side and p--side is equal to
(c) Gallium phosphide (GaP)
(d) Indium gallium arsenide (InGaAs) (a) 1 : 4
(b) 1 : 2
Ques 62. An example of good semiconductor on (c) 1 : 1
band gap basis is (d) 2 : 1
(a) Lead sulphide (PbS)
(b) Silicon nitride (Si3N4) Ques 68. A particular green LED emits light of
(c) Silicon dioxide (SiO2) wavelength 5490A˚.˚. The energy band gap of the
(d) Aluminiun nitride (AlN) semiconductor material used there is equal to
(Take Plank's constant = 6.626 x 10-34 Js)
Ques 63. Match the followings columns,
(a) 2.26 eV
column-I column-II
column (b) 1.98 eV
A Band Gap of Silicon at 0 K P 0.785 eV (c) 1.17 eV
B Band Gap of Germanium at Q 1.21 eV (d) 0.74 eV
0K
C Band Gap of Silicon at 300 R 0.72 eV Ques 69. In a p-typetype silicon sample, the hole
K concentration
ncentration is 2.25 x 105 cm-3, then the electron
D Band Gap of Germanium at S 1.1 eV concentration is equal to, (ni = 1.5 x 1010 cm-3)
300 K
(a) 105 cm-3
(a) A-P, B-Q, C-R, D-S (b) 1010 cm-3
(b) A-Q, B-P, C-S, D-R (c) 1015 cm-3
(c) A-R, B-S, C-P, D-Q (d) 1020 cm-3
(d) A-S, B-R, C-Q, D-P
Ques 70. The donor and the acceptor impurities in
Ques 64. The concentration of free electron is a silicon diode are 1 x 1016 cm-3 and 5 x 1018 cm-3
given by respectively. If ni = 1.5 x 1010 cm-3 at 300 K, kT/q =
26 mV and permittivity of silicon is 1.04 x 10-12
F/cm. The built in potential and depletion width of
the diode under thermal conditions are
respectively,
Ques 73. Silicon is doped with boron to a Ques 78. Consideration of monopole is given by,
concentration of 4 x 1017 atoms/cm3. If the A. ∇ X f
intrinsic concentration is 1.5 x 1010/cm3 and kT/q B. ∇ X g
is 25mV at 300K. Compared to undoped silicon, C. ∇. f
the Fermi level of doped silicon is equal to D. ∇. g
Ques 76. A uniform plane wave travelling in air is Ques 83. When the forward bias is applied to a pn-
incident on the plane boundary between air and junction the drift current
another dielectric medium with εr = 4. The A. increases
reflection coefficient for the normal incidence is B. decreases to zero
equal to C. decreases
D. remains unchanged
A. 0.33
B. 0.50
Ques 84. An expression of Coriolis force must
C. 0.66
contain
D. 0.75
A. ω
Ques 77. If the maxima and minima of a standing B. 2ω
wave are 4 and 1 respectively. Find the reflection C. 3ω
coefficient. D. 4ω