Chapter 1 Introduction
Chapter 1 Introduction
TESTING
Dr. H. P. Koringa
EC Department
Government Engineering College,
Rajkot-India
WHAT IS THIS CHAPTER ABOUT?
Focus on
Importance of testing in the design and
manufacturing processes
Challenges in test generation and fault modeling
Levels of abstraction in VLSI testing
Introduction
Fault Models
Levels of Abstraction
Concluding Remarks
3
INTRODUCTION
Integrated Circuits (ICs)
have grown in size and 1.E+09
complexity since the late
1.E+08
1950’s
1.E+07
Number of Transistors
Small Scale Integration (SSI)
Medium Scale Integration 1.E+06
(MSI) 1.E+05
Large Scale Integration (LSI) 1.E+04
Very Large Scale Integration 1.E+03 VLSI
(VLSI)
1.E+02
Moore’s Law: scale of ICs S M
LSI
1.E+01
doubles every 18 months S S
1.E+00 I I
Growing size and complexity
1960s 1970s 1980s 1990s 2000s
poses many and new testing
challenges
4
IMPORTANCE OF TESTING
6
TESTING DURING VLSI LIFE CYCLE
Input1 Output1
Input Circuit Output
Test Under Test Response Pass/Fail
Inputn Outputm
Stimuli (CUT) Analysis
7
TESTING DURING VLSI DEVELOPMENT
Design verification
Design Specification
targets design errors
Corrections made
Design Design Verification
prior to fabrication
Remaining tests
Fabrication Wafer Test
target manufacturing
defects
Packaging Package Test
A defect is a flaw or
physical imperfection
that can lead to a fault Quality Assurance Final Testing
8
DESIGN VERIFICATION
Differentlevels of
abstraction during design Design Specification
CAD tools used to synthesize
design from RTL to physical Behavioral (Architecture) Level
level
Simulation used at various Register-Transfer Level
level to test for
Design errors in behavioral Logical (Gate) Level
or RTL
Design meeting system Physical (Transistor) Level
timing requirements after
synthesis 9
YIELD AND REJECT RATE
We expect faulty chips due to manufacturing defects
Called yield number of acceptable parts
yield =
total number of parts fabricated
2 types of yield loss
Catastrophic – due to random defects
Parametric – due to process variations
Undesirable results during testing
Faulty chip appears to be good (passes test)
Called reject rate
Good chip appears to be faulty (fails test)
Due to poorly designed tests or lack of DFT
11
SYSTEM-LEVEL OPERATION
S Normal system operation
1
Faults occur 0
t0 t1 t2 t3 t4 t
during system operation
failures
Exponential failure law
Interval of normal system operation is random number
exponentially distributed
Reliability
Probability that system will operate normally until time t
P(Tn t ) = e − t
Failure rate, , is sum of individual component failure
rates, i
k
= i 12
i =0
SYSTEM-LEVEL OPERATION
Mean Time Between Failures
(MTBF) 1
MTBF = e − t dt =
Repair time (R) also assumed to 0
13
SYSTEM-LEVEL TESTING
14
Some Real Defects in Chips
• Processing Faults
– missing contact windows
– parasitic transistors
– oxide breakdown
• Material Defects
– bulk defects (cracks, crystal imperfections)
– surface impurities (ion migration)
• Packaging Failures
– Contact degradation
– Seal leaks
• Time-Dependent Failures
– Dielectric breakdown
– Electromigration
Defects, Faults, Errors and
Failures
• Defect: An unintended difference between the
implemented hardware and its intended design
• Fault: A representation of a “defect” at abstracted
functional level
– May or may not cause a problem
a c
b
WHY MODEL FAULTS ?
• Stuck-At Faults
• Bridging/break Faults
• Transistor Stuck-On/Open Faults
• Functional Faults
• Memory Faults
• Delay Faults
• Transition Faults
• State Transition Faults
Single Stuck-At Faults
Faulty Response
Test Vector
Fault-free Response
0 0
1 1/ 0
1
1/0
1
stuck-at-0
k How many
f
faults?
MULTIPLE STUCK-AT FAULTS
24
FAULT DETECTION
X1 Z1
x
s-a-1
X2
Z2
X3
Z1=X1X2 Z2=X2X3
1
a
G1 1/0
1
s-a-0
b 0 x
z
0 0
???
c
1
z (t) z (t)
NAND gate: all the input s-a-0 faults and the output
s-a-1 faults are equivalent
NOR gate: all input s-a-1 faults and the output
s-a-0 faults are equivalent
Inverter: input s-a-1 and output s-a-0 are equivalent
input s-a-0 and output s-a-1 are equivalent
s.a.0
s.a.1
s.a.1
Example: Three faults shown
are equivalent
EQUIVALENCE EXAMPLE
sa0 sa1
Faults in red
sa0 sa1 removed by
sa0 sa1 equivalence
collapsing
sa0 sa1 sa0 sa1
sa0 sa1
sa0 sa1
sa0 sa1 sa0 sa1
sa0 sa1
35
FAULT MODELS
A given fault model has k types of faults
k = 2 for most fault models
A given circuit has n possible fault sites
Multiple fault model –circuit can have
multiple faults (including single faults
Number of multiple fault = (k+1)n-1
Each fault site can have 1-of-k fault types or be fault-free
The “-1” represents the fault-free circuit
37
STUCK-AT FAULTS
Truth table for fault-free behavior
❑ Any line can be and behavior of all possible stuck-at faults
x1x2x3 000 001 010 011 100 101 110 111
▪ Stuck-at-0 (SA0) y 0 1 0 0 0 1 1 1
a SA0 0 1 0 0 0 1 0 0
▪ Stuck-at-1 (SA1) a SA1 0 1 1 1 0 1 1 1
b SA0 0 1 0 1 0 1 0 1
# fault types: k=2 b SA1 0 0 0 0 1 1 1 1
x2 b d g
g SA0 0 1 0 0 0 1 0 0
g SA1 1 1 1 1 1 1 1 1
i y h SA0 0 0 0 0 0 0 1 1
h SA1 1 1 1 1 1 1 1 1
e f h i SA0 0 0 0 0 0 0 0 0
x3 c i SA1 1 1 1 1 1 1 1 1
39
STUCK-AT FAULTS
Truth table for fault-free behavior
❑4 sets of equivalent and behavior of all possible stuck-at faults
faults x1x2x3
y
000 001 010 011 100 101 110
0 1 0 0 0 1 1
111
1
❑ # collapsed faults = a
a
SA0
SA1
0
0
1
1
0
1
0
1
0
0
1
1
0
1
0
1
2×(PO+FO)+GI-NI b
b
SA0
SA1
0
0
1
0
0
0
1
0
0
1
1
1
0
1
1
1
▪ PO= # primary outputs c
c
SA0
SA1
0
1
0
1
0
0
0
0
0
1
0
1
1
1
1
1
▪ FO= # fanout stems d
d
SA0
SA1
0
0
1
1
0
0
0
0
0
1
1
1
0
1
0
1
▪ GI= # gate inputs e SA0 0 1 0 1 0 1 1 1
e SA1 0 0 0 0 0 0 1 1
▪ NI= # inverters f SA0 0 0 0 0 0 0 1 1
x1 a f SA1 0 1 0 1 0 1 1 1
x2 b d g
g SA0 0 1 0 0 0 1 0 0
g SA1 1 1 1 1 1 1 1 1
i y h SA0 0 0 0 0 0 0 1 1
h SA1 1 1 1 1 1 1 1 1
e f h i SA0 0 0 0 0 0 0 0 0
x3 c i SA1 1 1 1 1 1 1 1 1
40
STUCK-AT FAULTS
41
TRANSISTOR FAULTS VDD
A
P1
2-input
Any transistor can be CMOS B P2
NOR Z
Stuck-short gate
Also known as stuck-short N1 N2
Stuck-open
Also known as stuck-open VSS
# fault types: k=2 Truth table for fault-free circuit
and all possible transistor faults
Example circuit AB 00 01 10 11
# fault sites: n=4 Z 1 0 0 0
N1 stuck-open 1 0 last Z 0
# single faults =2×4=8
N1 stuck-short IDDQ 0 0 0
N2 stuck-open 1 last Z 0 0
N2 stuck-short IDDQ 0 0 0
P1 stuck-open last Z 0 0 0
P1 stuck-short 1 0 IDDQ 0
P2 stuck-open last Z 0 0 0 42
P2 stuck-short 1 IDDQ 0 0
TRANSISTOR FAULTS VDD
A
P1
Stuck-short faults cause 2-input
B
conducting path from VDD to VSS CMOS P2
Z
NOR
Can be detect by monitoring steady- gate
state power supply current IDDQ N1 N2
44
SHORTS AND OPENS
Wires can be
Open
Opens in wires interconnecting transistors to form gates behave
like transistor stuck-open faults
Opens in wires interconnecting gates to form circuit behave like
stuck-at faults
Opens are detected by vectors detecting transistor and stuck-at
faults
Short to an adjacent wire
Also known as a bridging fault
45
EXAMPLES OF SHORT AND OPEN FAULTS
46
BRIDGING FAULTS AS AD
source destination
Three different models BS BD
bridging fault
Wired-AND/OR AS AD AS AD
Dominant
Dominant-AND/OR BS B D BS BD
Wired-AND Wired-OR
Detectable by IDDQ testing AS AD AS AD
AS BS 0 0 0 1 1 0 1 1 BS BD BS BD
AD BD 0 0 0 1 1 0 1 1 A dominates B B dominates A
Wired-AND 0 0 0 0 0 0 1 1 AS AD AS AD
Wired-OR 0 0 1 1 1 1 1 1
A dominates B 0 0 0 0 1 1 1 1 BS BD BS BD
B dominates A 0 0 1 1 0 0 1 1 A dominant-AND B A dominant-OR B
A dominant-AND B 0 0 0 0 1 0 1 1 AS AD AS AD
B dominant-AND A 0 0 0 1 0 0 1 1
A dominant-OR B 0 0 0 1 1 1 1 1 BS BD BS 47 BD
B dominant-OR A 0 0 1 1 1 0 1 1 B dominant-AND A B dominant-OR A
DELAY FAULTS AND CROSSTALK
Path-delay fault model considers cumulative
propagation delay through CUT
2 test vectors create transition along path
Faulty circuit has excessive delay
Delays and glitches can be caused by crosstalk between
interconnect
due to inductance and capacitive coupling
0 0 x1
0 1 x2 3
t=0 t=7
2 y
v2 v1
t=2
2 48
1 1 x3 3
PATTERN SENSITIVITY AND COUPLING
FAULTS
Common in high density RAMs
Pattern sensitivity fault
Contents of memory cell is affected by contents of
neighboring cells
Coupling fault
Transition in contents of one memory cell causes change
in contents of another cell
49
ANALOG FAULT MODELS
Catastrophic faults
Shorts and opens
Parametric faults
Parametric variations in passive and active components
cause components to be out of tolerance range
Active components can sustain defects that affect
DC and/or AC operation
50
LEVELS OF ABSTRACTION
High levels have few implementation details needed for
effective test generation
Fault models based on gate & physical levels
Example: two circuits for same specification
Ckt B test vectors do not detect 4 faults in Ckt A
a SA1
f(a,b,c)=m(1,7)+d(3) = abc + abc + Xabc b
c
ab 0 0 0 1 1 1 1 0 SA1 f
c f = abc + abc
0 1 X SA1 Circuit A
Circuit A Test Vectors
1 1 {111,110,101,011,010,000} SA1
ab 0 0 0 1 1 1 1 0 a
c
1 X f = ab + bc b Circuit B
0
Circuit B Test Vectors f51
1 1 {111,101,010,000}
c
OVERVIEW OF VLSI TEST TECHNOLOGY
52
OVERVIEW OF VLSI TEST TECHNOLOGY
Automatic Test Pattern Generation (ATPG)
Algorithms generating sequence of test vectors for a given
circuit based on specific fault models
Fault simulation
Emulates fault models in CUT and applies test vectors to
determine fault coverage
Simulation time (significant due to large number of faults to
emulate) can be reduced by
Parallel, deductive, and concurrent fault simulation
53
OVERVIEW OF VLSI TEST TECHNOLOGY
54
DESIGN OF TESTABILITY
Ad-hoc DFT techniques
Add internal test points (usually multiplexers) for
Controllability
Observability
Scan Data In
DESIGN FOR TESTABILITY
Boundary Scan – scan design applied to I/O buffers of
chip
Used for testing interconnect on PCB
Provides access to internal DFT capabilities
IEEE standard 4-wire Test Access Port (TAP)
Primary Inputs
0 Circuit Primary Outputs
Under
TPG 1 Test
Pass
BIST Mode ORA 58
Fail
DEFINITIONS
Design synthesis: Given an I/O function, develop a
procedure to manufacture a device using known materials
and processes.
59
Verification: Predictive analysis to ensure that the
synthesized design, when manufactured, will perform the
given I/O function.
Test: A manufacturing step that ensures that the physical
device, manufactured from the synthesized design, has no
manufacturing defect.
VERIFICATION VS. TEST