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PE Assignment Questions UNIT-2

This document contains 6 questions about power electronics concepts for an assignment. The questions ask the student to compare MOSFET and GTO transistors, draw and compare the IGBT circuit symbol to MOSFETs, draw the switching model and waveforms of a power MOSFET and define switching applications, show the delay during turn-on and turn-off of a power transistor using waveforms, explain overdrive factor and forced beta for switching applications of a power transistor, and define di/dt and how devices are protected against high di/dt and dv/dt.

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Mr. Amit Kumar Singh
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53 views1 page

PE Assignment Questions UNIT-2

This document contains 6 questions about power electronics concepts for an assignment. The questions ask the student to compare MOSFET and GTO transistors, draw and compare the IGBT circuit symbol to MOSFETs, draw the switching model and waveforms of a power MOSFET and define switching applications, show the delay during turn-on and turn-off of a power transistor using waveforms, explain overdrive factor and forced beta for switching applications of a power transistor, and define di/dt and how devices are protected against high di/dt and dv/dt.

Uploaded by

Mr. Amit Kumar Singh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Power Electronics

Assignment questions

UNIT 2
1. Give the comparison between MOSFET and GTO.
2. Draw the circuit symbol of IGBT. Compare its advantages over MOSFET
3. Draw the switching model and switching waveforms of a power MOSFET, define the various
Switching applications
4. With a circuit diagram and waveforms of base circuit voltage, base current and collector
current under saturation for a power transistor, show the delay that occurs during the turn-ON
and turn – OFF.
5. Explain the terms Overdrive factor (ODF) and forced beta for a power transistor for
Switching applications?
6. What is di/dt? Explain how the devices are protected against high di/dt and dv/dt.

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