❖ MOSFET: Physical Operation, Current—Voltage Characteristics,
❖ Threshold voltage equations, MOS device equations
❖ MOSFET as an Amplifier and Switch
❖ MOS Capacitor ,Small-Signal Operation and Models
❖ MOSFET Configurations and Biasing- Second order effects
MOSFET
Why MOSFET?
▪ Unlike BJT, MOSFET requires almost no
input current & controls heavy current at
the output.
▪ MOSFETs are quicker in operation than
FETs, thus used in fast switching
applications.
▪ MOSFET is compact and easy to use
What Is a MOSFET?
Metal Oxide Silicon Field Effect Transistors
working principle of a MOSFET depends upon the MOS capacitor
It is a voltage controlled device
Used to switch or amplify voltages in circuits.
The terminals of MOSFET :
❑ Source,Gate,Drain,Body
MOSFET operates in two modes, named:
❖ Enhancement Mode.
❖ Depletion Mode.
Depletion Mode
Enhancement Mode
Enhancement MOSFET the source and the drain are not connected physically so in the
symbol lines are broken and in the Depletion mode line is continuous. In the N type the
arrow points inside and in the P type arrow points outside
Working of N channel Enhancement MOSFET
To create a channel , apply a voltage between the gate and the source terminal
keeping the Gate at a higher potential
Positive VGS is applied to the gate, creating an n-type channel (or inversion layer) in the
p-type substrate beneath the gate. This channel allows electrons to flow from the
source to the drain, thus enabling current flow
Working of Depletion MOSFET: The source and drain terminals are physically
connected.
▪ When the gate terminal is connected to the negative terminal and source to the positive
terminal, the electrons gets repelled below the dielectric layer.
▪ The positive charged carrier from the source gets combined with the majority carrier the
electrons in the N type and thus depletion layer is formed and the channel resistance
increases and the current flow decreases.
▪ Thus the increase in gate voltage decreases the drain current. They are inversely
proportional.
▪ When the negative voltage is further increased it reaches the pinch off mode.
Characteristics of depletion type MOSFET
❖ The V-I characteristics for MOSFET are drawn in two modes which are:
Depletion Mode. Enhancement Mode
❖ A MOSFET functions as a switch by controlling the flow of current between its
source and drain terminals through the gate voltage
MOSFET as a switch MOSFET can only work as an analog switching circuit if
it operates between the cut off region when the
gate-source voltage is zero up to the saturated region
where the VGS becomes saturated
MOSFET vs JFET
1. MOSFET has four (Gate, source and drain , Body )components meanwhile the
JFET has three components (Gate, source and drain )
2. MOSFET has a higher input impedance than the JFET.
3. MOSFET has higher drain resistance than JFET
4. MOSFET make less noise than the JFET
5. JFET is less costly and easy to manufacture because of the absence of a metal
oxide layer that is present in MOSFET.
6. MOSFET can easily be damaged due to low input capacitance meanwhile a
higher input capacitance saves the JFET from immediate damage.
7. JFET has a higher gate current than the MOSFET.
8. MOSFET can work in two modes, depletion-mode as well as enhancement
mode, on the other hand, JFET only works in depletion mode.
MOSFETs are three-terminal, unipolar, voltage-controlled
devices with high input impedance, crucial in many
electronic circuits.
MOSFT as Switch
Shockley’s equation is applied to relate the input (VGS) and output (ID) quantities:
In the saturation region the drain current is given by:
Where (VGST or VT) represent threshold voltage, and (K) it is conduction parameter.
MOSFET as an Amplifier ❖ DC biasing condition
Common Source Amplifier ❖ Voltage divider
❖ Biased in the middle saturation region
MOSFET amplifiers are known for their high input impedance
MOSFETs offer exceptional power efficiency due to their low on-resistance and negligible
static power consumption. This efficiency reduces heat generation and longer battery life
in portable devices
MOS Capacitor:
The acronym MOS stands for metal–oxide–semiconductor. An MOS capacitor is made
of a semiconductor body or substrate, an insulator film, such as SiO2, and a metal
electrode called a gate.
An MOS transistor is an MOS capacitor with PN junctions at two ends
MOS capacitor biased into inversion
MOSFET amplifier configurations:
common gate, common source, and common drain
Common-Source Configuration:
Gain: Provides high voltage gain and is widely used in amplifier circuits.
Second-order effects in MOSFET
❑ Channel length modulation, body effect, and sub threshold leakage,
❑ Significantly impact the device's performance and biasing when operating at high
speeds or under specific conditions.
❑ These effects, often arising from physical device characteristics, can deviate from
the ideal MOSFET model and lead to unexpected circuit behavior.
Body Effect (Bulk Effect):
When the body (or substrate) of the MOSFET is not at the same potential as the source,
the threshold voltage (VT) changes due to the charge in the body. This effect is
influenced by the bulk-to-source voltage (VBS) and can significantly alter the transistor's
ON/OFF behavior, especially in circuits where the bulk is not grounded.
Subthreshold Conduction:
When the gate-source voltage (VGS) is below the threshold voltage, a small current,
called subthreshold leakage current, still flows through the MOSFET. This leakage
current can be significant at low VGS values, impacting power consumption and circuit
stability.
Second-order effects can affect the biasing of MOSFETs by:
•Changing the threshold voltage (VT).
•Modifying the output resistance (ro).
•Increasing leakage current (Id).
•Altering the transconductance (gm)
Addressing Second-Order Effects:
Understanding and mitigating these effects is crucial for accurate circuit design,
particularly in high-speed applications. Techniques like proper biasing, device
selection, and circuit design considerations are employed to minimize the impact of
second-order effects on circuit performance.
